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    THIN FILM DEVICE WITH LAYER ISOLATION STRUCTURE
    1.
    发明申请
    THIN FILM DEVICE WITH LAYER ISOLATION STRUCTURE 审中-公开
    具有层隔离结构的薄膜装置

    公开(公告)号：US20090108397A1

    公开(公告)日：2009-04-30

    申请号：US11932653

    申请日：2007-10-31

    申请人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

    发明人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

    IPC分类号： H01L29/00

    CPC分类号： H01L27/12 ,  H01L23/5221 ,  H01L2924/0002 ,  H01L2924/00

    摘要： This invention provides a thin film device with layer isolation structures. Specifically, a plurality of patterned thin film device layers provide a first rail and a second rail. There is at least one overpass between the first rail and the second rail. The overpass is defined by an array of spaced holes disposed transversely through the continuous material of the first rail on either side of the overpass. The holes are in communication with isolation voids adjacent to the second rail adjacent to the overpass.

    摘要翻译： 本发明提供一种具有层隔离结构的薄膜器件。 具体地，多个图案化薄膜器件层提供第一轨道和第二轨道。 在第一轨道和第二轨道之间存在至少一个立交桥。 立交桥由立交桥两侧横向穿过第一轨道的连续材料的间隔开的孔组成。 这些孔与毗邻立交桥的第二轨道相邻的隔离空洞连通。

    Thin film device with minimized spatial variation of local mean height
    2.
    发明授权
    Thin film device with minimized spatial variation of local mean height 有权
    薄膜器件具有最小的局部平均高度的空间变化

    公开(公告)号：US08765252B2

    公开(公告)日：2014-07-01

    申请号：US11948867

    申请日：2007-11-30

    申请人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

    发明人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

    IPC分类号： B32B7/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00

    CPC分类号： B82Y10/00 ,  B32B7/02 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24942

    摘要： This invention provides a thin film device with minimized spatial variation of local mean height. More specifically, the thin film device has a substrate and at least one first structure having a first spatially varying weighted local mean height determined by a layer weighting function. The first structure has a first maximum height, a first minimum height and a first variation for a given averaging area. A compensation structure is also provided upon the substrate, the compensation structure having a second spatially varying weighted local mean height determined by the layer weighting function. The compensation structure also has a second maximum height, a second minimum height and a second variation for the given averaging area. The first structure and compensation structure combine to provide a combined structure upon the substrate with minimized spatial variation of a combined weighted local mean.

    摘要翻译： 本发明提供一种具有最小的局部平均高度的空间变化的薄膜装置。 更具体地，薄膜器件具有衬底和至少一个具有由层加权函数确定的具有第一空间变化的加权局部平均高度的第一结构。 第一结构具有给定平均区域的第一最大高度，第一最小高度和第一变化。 还在衬底上提供补偿结构，补偿结构具有由层加权函数确定的第二空间变化的加权局部平均高度。 补偿结构还具有给定平均区域的第二最大高度，第二最小高度和第二变化。 第一结构和补偿结构结合在一起，在基底上提供组合结构，使组合加权局部平均值具有最小的空间变化。

    THIN FILM DEVICE WITH MINIMIZED SPATIAL VARIATION OF LOCAL MEAN HEIGHT
    3.
    发明申请
    THIN FILM DEVICE WITH MINIMIZED SPATIAL VARIATION OF LOCAL MEAN HEIGHT 有权
    具有最小化的局部平均高度的空间变化的薄膜装置

    公开(公告)号：US20090142560A1

    公开(公告)日：2009-06-04

    申请号：US11948867

    申请日：2007-11-30

    申请人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

    发明人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

    IPC分类号： B32B7/02

    CPC分类号： B82Y10/00 ,  B32B7/02 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24942

    摘要： This invention provides a thin film device with minimized spatial variation of local mean height. More specifically, the thin film device has a substrate and at least one first structure having a first spatially varying weighted local mean height determined by a layer weighting function. The first structure has a first maximum height, a first minimum height and a first variation for a given averaging area. A compensation structure is also provided upon the substrate, the compensation structure having a second spatially varying weighted local mean height determined by the layer weighting function. The compensation structure also has a second maximum height, a second minimum height and a second variation for the given averaging area. The first structure and compensation structure combine to provide a combined structure upon the substrate with minimized spatial variation of a combined weighted local mean.

    摘要翻译： 本发明提供一种具有最小的局部平均高度的空间变化的薄膜装置。 更具体地，薄膜器件具有衬底和至少一个具有由层加权函数确定的具有第一空间变化的加权局部平均高度的第一结构。 第一结构具有给定平均区域的第一最大高度，第一最小高度和第一变化。 还在衬底上提供补偿结构，补偿结构具有由层加权函数确定的第二空间变化的加权局部平均高度。 补偿结构还具有给定平均区域的第二最大高度，第二最小高度和第二变化。 第一结构和补偿结构结合在一起，在基底上提供组合结构，使组合加权局部平均值具有最小的空间变化。

    METHOD OF FORMING A PRESSURE SWITCH THIN FILM DEVICE
    5.
    发明申请
    METHOD OF FORMING A PRESSURE SWITCH THIN FILM DEVICE 有权
    形成压力开关薄膜装置的方法

    公开(公告)号：US20080248605A1

    公开(公告)日：2008-10-09

    申请号：US11696079

    申请日：2007-04-03

    申请人： Carl P. Taussig ,  Ping Mei ,  Hao Luo ,  Warren Jackson

    发明人： Carl P. Taussig ,  Ping Mei ,  Hao Luo ,  Warren Jackson

    IPC分类号： H01L21/00 ,  H01L29/84

    CPC分类号： H01L27/14683 ,  G06K9/0002 ,  H01L27/14678 ,  H01L29/84

    摘要： This invention provides a method of forming at least one pressure switch thin film device. The method includes providing a substrate and depositing a plurality of thin film device layers as a stack upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film device layers and the 3D template structure are then etched and at least one thin film device layer is undercut to provide a plurality of aligned electrical contact pairs and adjacent spacer posts. A flexible membrane providing a plurality of separate electrical contacts is deposited upon the spacer posts, the separate electrical contacts overlapping the contact pairs. The spacer posts provide a gap between the electrical contacts and the contact pairs.

    摘要翻译： 本发明提供一种形成至少一个压力开关薄膜器件的方法。 该方法包括提供衬底并将多个薄膜器件层作为堆叠沉积在衬底上。 在多个薄膜器件层上提供印模的3D模板结构。 然后蚀刻多个薄膜器件层和3D模板结构，并且至少一个薄膜器件层被切削以提供多个对准的电接触对和相邻的间隔柱。 提供多个单独的电触点的柔性膜沉积在间隔柱上，分开的电触点与触点对重叠。 间隔柱在电触点和触点对之间提供间隙。

    Method of forming a pressure switch thin film device
    7.
    发明授权
    Method of forming a pressure switch thin film device 有权
    形成压力开关薄膜装置的方法

    公开(公告)号：US07795062B2

    公开(公告)日：2010-09-14

    申请号：US11696079

    申请日：2007-04-03

    申请人： Carl P. Taussig ,  Ping Mei ,  Hao Luo ,  Warren Jackson

    发明人： Carl P. Taussig ,  Ping Mei ,  Hao Luo ,  Warren Jackson

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14683 ,  G06K9/0002 ,  H01L27/14678 ,  H01L29/84

    摘要： This invention provides a method of forming at least one pressure switch thin film device. The method includes providing a substrate and depositing a plurality of thin film device layers as a stack upon the substrate. An imprinted 3D template structure is provided upon the plurality of thin film device layers. The plurality of thin film device layers and the 3D template structure are then etched and at least one thin film device layer is undercut to provide a plurality of aligned electrical contact pairs and adjacent spacer posts. A flexible membrane providing a plurality of separate electrical contacts is deposited upon the spacer posts, the separate electrical contacts overlapping the contact pairs. The spacer posts provide a gap between the electrical contacts and the contact pairs.

    摘要翻译： 本发明提供一种形成至少一个压力开关薄膜器件的方法。 该方法包括提供衬底并将多个薄膜器件层作为堆叠沉积在衬底上。 在多个薄膜器件层上提供印模的3D模板结构。 然后蚀刻多个薄膜器件层和3D模板结构，并且至少一个薄膜器件层被切削以提供多个对准的电接触对和相邻的间隔柱。 提供多个单独的电触点的柔性膜沉积在间隔柱上，分开的电触点与触点对重叠。 间隔柱在电触点和触点对之间提供间隙。