公开(公告)号：US20090108397A1

公开(公告)日：2009-04-30

申请号：US11932653

申请日：2007-10-31

申请人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

发明人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

IPC分类号： H01L29/00

CPC分类号： H01L27/12 ,  H01L23/5221 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention provides a thin film device with layer isolation structures. Specifically, a plurality of patterned thin film device layers provide a first rail and a second rail. There is at least one overpass between the first rail and the second rail. The overpass is defined by an array of spaced holes disposed transversely through the continuous material of the first rail on either side of the overpass. The holes are in communication with isolation voids adjacent to the second rail adjacent to the overpass.

摘要翻译： 本发明提供一种具有层隔离结构的薄膜器件。 具体地，多个图案化薄膜器件层提供第一轨道和第二轨道。 在第一轨道和第二轨道之间存在至少一个立交桥。 立交桥由立交桥两侧横向穿过第一轨道的连续材料的间隔开的孔组成。 这些孔与毗邻立交桥的第二轨道相邻的隔离空洞连通。

公开(公告)号：US20090142560A1

公开(公告)日：2009-06-04

申请号：US11948867

申请日：2007-11-30

申请人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

发明人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

IPC分类号： B32B7/02

CPC分类号： B82Y10/00 ,  B32B7/02 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24942

摘要： This invention provides a thin film device with minimized spatial variation of local mean height. More specifically, the thin film device has a substrate and at least one first structure having a first spatially varying weighted local mean height determined by a layer weighting function. The first structure has a first maximum height, a first minimum height and a first variation for a given averaging area. A compensation structure is also provided upon the substrate, the compensation structure having a second spatially varying weighted local mean height determined by the layer weighting function. The compensation structure also has a second maximum height, a second minimum height and a second variation for the given averaging area. The first structure and compensation structure combine to provide a combined structure upon the substrate with minimized spatial variation of a combined weighted local mean.

摘要翻译： 本发明提供一种具有最小的局部平均高度的空间变化的薄膜装置。 更具体地，薄膜器件具有衬底和至少一个具有由层加权函数确定的具有第一空间变化的加权局部平均高度的第一结构。 第一结构具有给定平均区域的第一最大高度，第一最小高度和第一变化。 还在衬底上提供补偿结构，补偿结构具有由层加权函数确定的第二空间变化的加权局部平均高度。 补偿结构还具有给定平均区域的第二最大高度，第二最小高度和第二变化。 第一结构和补偿结构结合在一起，在基底上提供组合结构，使组合加权局部平均值具有最小的空间变化。

公开(公告)号：US08765252B2

公开(公告)日：2014-07-01

申请号：US11948867

申请日：2007-11-30

申请人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

发明人： Warren Jackson ,  Carl P. Taussig ,  Ping Mei ,  Albert Jeans ,  Han-Jun Kim

IPC分类号： B32B7/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/00

CPC分类号： B82Y10/00 ,  B32B7/02 ,  B82Y40/00 ,  G03F7/0002 ,  Y10T428/24942

摘要： This invention provides a thin film device with minimized spatial variation of local mean height. More specifically, the thin film device has a substrate and at least one first structure having a first spatially varying weighted local mean height determined by a layer weighting function. The first structure has a first maximum height, a first minimum height and a first variation for a given averaging area. A compensation structure is also provided upon the substrate, the compensation structure having a second spatially varying weighted local mean height determined by the layer weighting function. The compensation structure also has a second maximum height, a second minimum height and a second variation for the given averaging area. The first structure and compensation structure combine to provide a combined structure upon the substrate with minimized spatial variation of a combined weighted local mean.

摘要翻译： 本发明提供一种具有最小的局部平均高度的空间变化的薄膜装置。 更具体地，薄膜器件具有衬底和至少一个具有由层加权函数确定的具有第一空间变化的加权局部平均高度的第一结构。 第一结构具有给定平均区域的第一最大高度，第一最小高度和第一变化。 还在衬底上提供补偿结构，补偿结构具有由层加权函数确定的第二空间变化的加权局部平均高度。 补偿结构还具有给定平均区域的第二最大高度，第二最小高度和第二变化。 第一结构和补偿结构结合在一起，在基底上提供组合结构，使组合加权局部平均值具有最小的空间变化。

公开(公告)号：US20060275963A1

公开(公告)日：2006-12-07

申请号：US11144204

申请日：2005-06-02

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L21/84 ,  H01L27/148

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，在栅电极中具有纳米间隙的薄膜晶体管。 该方法包括提供基底。 然后在衬底上设置多个平行隔开的导电条。 然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。 然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

公开(公告)号：US20080185591A1

公开(公告)日：2008-08-07

申请号：US12011440

申请日：2008-01-24

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L29/04

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

公开(公告)号：US07056834B2

公开(公告)日：2006-06-06

申请号：US10777005

申请日：2004-02-10

申请人： Ping Mei ,  Warren B. Jackson ,  Carl Philp Taussig ,  Albert Jeans

发明人： Ping Mei ,  Warren B. Jackson ,  Carl Philp Taussig ,  Albert Jeans

IPC分类号： H01L21/31

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/66757 ,  H01L51/0097

摘要： An aspect of the present invention is a method for forming a plurality of thin-film devices. The method includes providing a flexible substrate and utilizing a self-aligned imprint lithography (SAIL) process to form the plurality of thin-film devices on the flexible substrate.

摘要翻译： 本发明的一个方面是形成多个薄膜器件的方法。 该方法包括提供柔性基板并利用自对准压印光刻（SAIL）工艺在柔性基板上形成多个薄膜器件。

公开(公告)号：US20070040491A1

公开(公告)日：2007-02-22

申请号：US11589580

申请日：2006-10-30

申请人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Craig Perlov ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01J1/62

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869

摘要： Thin film devices and methods for forming the same are disclosed herein. A method for forming a thin film device includes forming a first at least semi-conductive strip located at a first height relative to a surface of a substrate, and forming a second at least semi-conductive strip adjacent to the first at least semi-conductive strip. The second strip is located at a second height relative to the substrate surface, and the second height is different than the first height. A nano-gap is formed between the first and second at least semi-conductive strips.

摘要翻译： 本文公开了薄膜器件及其形成方法。 一种用于形成薄膜器件的方法包括形成位于相对于衬底表面的第一高度处的第一至少半导电条，以及形成与第一至少半导体相邻的第二至少半导电条 跳闸。 第二条带相对于基板表面位于第二高度，第二高度不同于第一高度。 在第一和第二至少半导电条之间形成纳米间隙。

公开(公告)号：US20050176182A1

公开(公告)日：2005-08-11

申请号：US10777005

申请日：2004-02-10

申请人： Ping Me ,  Warren Jackson ,  Carl Taussig ,  Albert Jeans

发明人： Ping Me ,  Warren Jackson ,  Carl Taussig ,  Albert Jeans

IPC分类号： G03F7/20 ,  C23C16/00 ,  H01L21/00 ,  H01L21/027 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L51/00

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/66757 ,  H01L51/0097

摘要： An aspect of the present invention is a method for forming a plurality of thin-film devices. The method includes providing a flexible substrate and utilizing a self-aligned imprint lithography (SAIL) process to form the plurality of thin-film devices on the flexible substrate.

摘要翻译： 本发明的一个方面是形成多个薄膜器件的方法。 该方法包括提供柔性基板并利用自对准压印光刻（SAIL）工艺在柔性基板上形成多个薄膜器件。

公开(公告)号：US08269221B2

公开(公告)日：2012-09-18

申请号：US12011440

申请日：2008-01-24

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L29/786

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，在栅电极中具有纳米间隙的薄膜晶体管。 该方法包括提供基底。 然后在衬底上设置多个平行隔开的导电条。 然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。 然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。

公开(公告)号：US07341893B2

公开(公告)日：2008-03-11

申请号：US11144204

申请日：2005-06-02

申请人： Ping Mei ,  Albert Jeans ,  Carl Taussig

发明人： Ping Mei ,  Albert Jeans ,  Carl Taussig

IPC分类号： H01L21/00

CPC分类号： H01L29/42384 ,  H01L29/6675 ,  H01L29/78645 ,  H01L29/7869 ,  Y10S438/942

摘要： Provided is a thin film device and an associated method of making a thin film device. For example, a thin film transistor with nano-gaps in the gate electrode. The method involves providing a substrate. Upon the substrate are then provided a plurality of parallel spaced electrically conductive strips. A plurality of thin film device layers are then deposited upon the conductive strips. A 3D structure is provided upon the plurality of thin film device layers, the structure having a plurality of different heights. The 3D structure and the plurality of thin film device layers are then etched to define a thin film device, such as for example a thin film transistor that is disposed above at least a portion of the conductive strips.

摘要翻译： 本发明提供一种制造薄膜器件的薄膜器件和相关方法。 例如，在栅电极中具有纳米间隙的薄膜晶体管。 该方法包括提供基底。 然后在衬底上设置多个平行隔开的导电条。 然后将多个薄膜器件层沉积在导电条上。 3D结构设置在多个薄膜器件层上，该结构具有多个不同的高度。 然后蚀刻3D结构和多个薄膜器件层以限定薄膜器件，例如设置在至少一部分导电条上的薄膜晶体管。