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1.发明授权公开(公告)号：US07301421B2
公开(公告)日：2007-11-27
申请号：US11169160
申请日：2005-06-28
申请人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
发明人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
CPC分类号： H03H9/02921 , H01L2224/97 , H01L2924/16195 , H03H3/08 , H03H9/02874 , H03H9/0576 , H03H9/059 , H03H9/1085 , H03H9/72 , H03H9/725
摘要： A conductor layer 10 is provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave element 1 on the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate 2. At this time, the conductor layer 10 is formed, except for a region 5a opposed to an input electrode section 5 in a filter region 9 and/or a region 6a opposed to an output electrode section 6. This allows a coupling amount between the input electrode section 5 and the output electrode section 6 due to a parasitic capacitance formed between the input electrode section 5 and the output electrode section 6 in the filter region 9 to be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.
摘要翻译： 在与压电基板2的IDT电极形成面相反的另一面上制造表面声波元件1的步骤中，设置导体层10，以防止发生热电破坏。 此时，除了与输出电极部6相对的过滤器区域9和/或区域6a中的与输入电极部5相对的区域5a之外，还形成导体层10。 这允许由于在滤波器区域9中形成的输入电极部分5和输出电极部分6之间形成的寄生电容而使输入电极部分5与输出电极部分6之间的耦合量减小，从而允许 提高声表面波器件的带衰减特性。
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公开(公告)号：US07332986B2
公开(公告)日：2008-02-19
申请号：US11169303
申请日：2005-06-28
申请人： Wataru Koga , Takanori Ikuta , Masayuki Funami , Kiyohiro Iioka
发明人： Wataru Koga , Takanori Ikuta , Masayuki Funami , Kiyohiro Iioka
CPC分类号： H03H9/0576 , H03H9/6483 , H03H9/725 , H03H2009/0019
摘要： An IDT electrode 2 and an electrode pad 3 are formed on one principal face of a piezoelectric substrate 1 and a circular electrode 4 is formed so as to surround these components. The circular electrode 4 is connected to a radiating conductor 15 formed on a bottom face of a circuit board 11 through a via conductor 14 formed within the circuit board 11. Thus, since heat generated in the IDT electrode 2 is easy to be released to the outside through the circular electrode 4, the via conductor 14 and the radiating conductor 15, adverse effects due to the heat can be prevented, thereby improving high power durability.
摘要翻译： 在压电基板1的一个主面上形成有IDT电极2和电极焊盘3，并且形成围绕这些部件的圆形电极4。 圆形电极4通过形成在电路板11内的通孔导体14连接到形成在电路板11的底面上的辐射导体15。 因此，由于IDT电极2中产生的热容易通过圆形电极4，通孔导体14和散热导体15释放到外部，所以可以防止由于热引起的不利影响，从而提高高功率耐久性。
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公开(公告)号：US20050285700A1
公开(公告)日：2005-12-29
申请号：US11169303
申请日：2005-06-28
申请人： Wataru Koga , Takanori Ikuta , Masayuki Funami , Kiyohiro Iioka
发明人： Wataru Koga , Takanori Ikuta , Masayuki Funami , Kiyohiro Iioka
CPC分类号： H03H9/0576 , H03H9/6483 , H03H9/725 , H03H2009/0019
摘要： An IDT electrode 2 and an electrode pad 3 are formed on one principal face of a piezoelectric substrate 1 and a circular electrode 4 is formed so as to surround these components. The circular electrode 4 is connected to a radiating conductor 15 formed on a bottom face of a circuit board 11 through a via conductor 14 formed within the circuit board 11. Thus, since heat generated in the IDT electrode 2 is easy to be released to the outside through the circular electrode 4, the via conductor 14 and the radiating conductor 15, adverse effects due to the heat can be prevented, thereby improving high power durability.
摘要翻译： 在压电基板1的一个主面上形成有IDT电极2和电极焊盘3，并且形成围绕这些部件的圆形电极4。 圆形电极4通过形成在电路板11内的通路导体14与形成于电路基板11的底面的散热导体15连接。因此，由于IDT电极2中产生的热容易被释放到 通过圆形电极4，通孔导体14和辐射导体15外部，可以防止由于热量引起的不利影响，从而提高高功率耐久性。
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4.发明申请公开(公告)号：US20050285699A1
公开(公告)日：2005-12-29
申请号：US11169160
申请日：2005-06-28
申请人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
发明人： Yuuko Yokota , Masayuki Funami , Takanori Ikuta , Wataru Koga , Yoshifumi Yamagata , Motoki Ito , Kiyohiro Iioka
CPC分类号： H03H9/02921 , H01L2224/97 , H01L2924/16195 , H03H3/08 , H03H9/02874 , H03H9/0576 , H03H9/059 , H03H9/1085 , H03H9/72 , H03H9/725
摘要： A conductor layer 10 is provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave element 1 on the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate 2. At this time, the conductor layer 10 is formed, except for a region 5a opposed to an input electrode section 5 in a filter region 9 and/or a region 6a opposed to an output electrode section 6. This allows a coupling amount between the input electrode section 5 and the output electrode section 6 due to a parasitic capacitance formed between the input electrode section 5 and the output electrode section 6 in the filter region 9 to be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.
摘要翻译： 在与压电基板2的IDT电极形成面相反的另一面上制造表面声波元件1的步骤中，设置导体层10，以防止发生热电破坏。 此时，除了与输出电极部6相对的过滤器区域9和/或区域6a中的与输入电极部5相对的区域5a之外，还形成导体层10。 这允许由于在滤波器区域9中形成的输入电极部分5和输出电极部分6之间形成的寄生电容而使输入电极部分5与输出电极部分6之间的耦合量减小，从而允许 提高声表面波器件的带衰减特性。
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5.发明申请Surface acoustic wave resonator, surface acoustic wave filter and surface acoustic wave duplexer, and communications equipment 失效表面声波谐振器，表面声波滤波器和表面声波双工器，以及通讯设备公开(公告)号：US20060214748A1
公开(公告)日：2006-09-28
申请号：US11392484
申请日：2006-03-28
申请人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
发明人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
IPC分类号： H03H9/64
CPC分类号： H03H9/725 , H03H9/02771 , H03H9/0576 , H03H9/643
摘要： Disclosed is a surface acoustic wave resonator which comprises, on a piezoelectric substrate 19, an IDT electrode 1 including bus bar electrodes 12a, reflector electrodes 2 disposed to be adjacent to both sides of the IDT electrode 1 in a main propagation direction F of surface acoustic waves at the IDT electrode 1, and auxiliary reflector electrodes 3 that are disposed at four positions external to the reflector electrodes 2 on virtual straight lines extending from the bus bar electrodes 12a of the IDT electrode 1 in an inclined manner so that the periodic direction G of periodically arranged electrodes 14b is oriented toward the IDT electrode 1.
摘要翻译： 公开了一种表面声波谐振器，其在压电基板19上包括IDT电极1，其包括汇流条电极12a，反射器电极2，该反射器电极2设置成与IDT电极1的主表面的主传播方向F相邻 IDT电极1的声波和辅助反射器电极3设置在反射器电极2的外部的四个位置处，以从IDT电极1的汇流条电极12a倾斜的方式延伸的虚拟直线上，使得周期性 周向布置的电极14b的方向G朝向IDT电极1。
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6.发明授权公开(公告)号：US07307369B2
公开(公告)日：2007-12-11
申请号：US11212504
申请日：2005-08-26
IPC分类号： H01L41/04
CPC分类号： H03H9/1085 , H01L2224/16225 , H01L2924/16195 , H03H3/08 , H03H9/02622 , H03H9/02874 , H03H9/059 , H03H9/1092 , H03H9/6483 , H03H9/725
摘要： An IDT electrode 3, and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2, and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2. The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.
摘要翻译： 在压电基板2的一个主表面上的过滤器区域中形成有与IDT电极3连接的IDT电极3，输入电极部5和输出电极部6，并且在另一个主表面上形成半导体层22 主表面与压电基片2的一个主表面相对。 半导体层22使得可以防止器件制造工艺中的热释电破坏以及防止带外衰减特性的劣化。
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7.发明授权Surface acoustic wave resonator, surface acoustic wave filter and surface acoustic wave duplexer, and communications equipment 失效表面声波谐振器，表面声波滤波器和表面声波双工器，以及通讯设备公开(公告)号：US07453335B2
公开(公告)日：2008-11-18
申请号：US11392484
申请日：2006-03-28
申请人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
发明人： Masayuki Funami , Yuuko Yokota , Kiyohiro Iioka
CPC分类号： H03H9/725 , H03H9/02771 , H03H9/0576 , H03H9/643
摘要： Disclosed is a surface acoustic wave resonator which comprises, on a piezoelectric substrate 19, an IDT electrode 1 including bus bar electrodes 12a, reflector electrodes 2 disposed to be adjacent to both sides of the IDT electrode 1 in a main propagation direction F of surface acoustic waves at the IDT electrode 1, and auxiliary reflector electrodes 3 that are disposed at four positions external to the reflector electrodes 2 on virtual straight lines extending from the bus bar electrodes 12a of the IDT electrode 1 in an inclined manner so that the periodic direction G of periodically arranged electrodes 14b is oriented toward the IDT electrode 1.
摘要翻译： 公开了一种表面声波谐振器，其在压电基板19上包括IDT电极1，其包括汇流条电极12a，反射器电极2，该反射器电极2设置成与IDT电极1的两侧在主表面的主传播方向F相邻 IDT电极1的声波和辅助反射器电极3设置在反射器电极2的外部的四个位置处，以从IDT电极1的汇流条电极12a倾斜的方式延伸的虚拟直线上，使得周期性 周向布置的电极14b的方向G朝向IDT电极1。
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8.发明申请公开(公告)号：US20060043822A1
公开(公告)日：2006-03-02
申请号：US11212504
申请日：2005-08-26
IPC分类号： H03H9/25
CPC分类号： H03H9/1085 , H01L2224/16225 , H01L2924/16195 , H03H3/08 , H03H9/02622 , H03H9/02874 , H03H9/059 , H03H9/1092 , H03H9/6483 , H03H9/725
摘要： An IDT electrode 3, and an input electrode section 5 and an output electrode section 6 each connecting with the IDT electrode 3 are formed in a filter region on one main surface of a piezoelectric substrate 2, and a semiconductor layer 22 is formed on the other main surface opposite to the one main surface of the piezoelectric substrate 2. The semiconductor layer 22 makes it possible to prevent pyroelectric destruction in the device manufacturing process as well as to prevent out-of-band attenuation characteristics from being degraded.
摘要翻译： 在压电基板2的一个主表面上的过滤器区域中形成有与IDT电极3连接的IDT电极3，输入电极部5和输出电极部6，并且在另一个主表面上形成半导体层22 主表面与压电基片2的一个主表面相对。 半导体层22使得可以防止器件制造工艺中的热释电破坏以及防止带外衰减特性的劣化。
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9.发明申请Surface acoustic wave device and duplexer and communication device using the same 有权表面声波装置和双工器及通信装置使用相同公开(公告)号：US20080238572A1
公开(公告)日：2008-10-02
申请号：US12078232
申请日：2008-03-28
IPC分类号： H03H9/72
CPC分类号： H03H9/6483 , H03H9/725
摘要： A surface acoustic wave device includes a first surface acoustic wave filter forming a ladder filter circuit; and a second surface acoustic wave filter having a passband at a frequency range higher than that of the first surface acoustic wave filter. The first surface acoustic wave filter includes a series-arm surface acoustic wave resonator, a parallel-arm surface acoustic wave resonator and an additional surface acoustic wave resonator. The series-arm surface acoustic wave resonator is on a series arm of the ladder filter circuit and includes an IDT electrode. The parallel-arm surface acoustic wave resonator is on a parallel arm of the ladder filter circuit and includes an IDT electrode. The additional surface acoustic wave resonator includes an IDT electrode, is connected in parallel with the series-arm surface acoustic wave resonator, and has a resonance frequency higher than the frequency range of the passband of the second surface acoustic wave filter.
摘要翻译： 表面声波装置包括形成梯形滤波器电路的第一声表面波滤波器; 以及具有比第一声表面波滤波器的频率高的通带的第二声表面波滤波器。 第一表面声波滤波器包括串联臂表面声波谐振器，平行臂声表面波谐振器和附加声表面波谐振器。 串联臂表面声波谐振器在梯形滤波电路的串联臂上，并包括IDT电极。 平行臂声表面波谐振器位于梯形滤波器电路的并联臂上，并包括IDT电极。 所述附加声表面波谐振器包括与所述串联臂声表面波谐振器并联的IDT电极，并且具有高于所述第二声表面波滤波器的通带的频率范围的谐振频率。
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10.发明授权Surface acoustic wave device and duplexer and communication device using the same 有权表面声波装置和双工器及通信装置使用相同公开(公告)号：US07659796B2
公开(公告)日：2010-02-09
申请号：US12078232
申请日：2008-03-28
CPC分类号： H03H9/6483 , H03H9/725
摘要： A surface acoustic wave device includes a first surface acoustic wave filter forming a ladder filter circuit; and a second surface acoustic wave filter having a passband at a frequency range higher than that of the first surface acoustic wave filter. The first surface acoustic wave filter includes a series-arm surface acoustic wave resonator, a parallel-arm surface acoustic wave resonator and an additional surface acoustic wave resonator. The series-arm surface acoustic wave resonator is on a series arm of the ladder filter circuit and includes an IDT electrode. The parallel-arm surface acoustic wave resonator is on a parallel arm of the ladder filter circuit and includes an IDT electrode. The additional surface acoustic wave resonator includes an IDT electrode, is connected in parallel with the series-arm surface acoustic wave resonator, and has a resonance frequency higher than the frequency range of the passband of the second surface acoustic wave filter.
摘要翻译： 表面声波装置包括形成梯形滤波器电路的第一声表面波滤波器; 以及具有比第一声表面波滤波器的频率高的通带的第二声表面波滤波器。 第一表面声波滤波器包括串联臂表面声波谐振器，平行臂声表面波谐振器和附加声表面波谐振器。 串联臂表面声波谐振器在梯形滤波电路的串联臂上，并包括IDT电极。 平行臂声表面波谐振器位于梯形滤波器电路的并联臂上，并包括IDT电极。 所述附加声表面波谐振器包括与所述串联臂声表面波谐振器并联的IDT电极，并且具有高于所述第二声表面波滤波器的通带的频率范围的谐振频率。
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