公开(公告)号：US20050016682A1

公开(公告)日：2005-01-27

申请号：US10893275

申请日：2004-07-19

申请人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  H01L21/31116 ,  H01L21/32136 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a system that automatically calculates optimal etching parameters in order to perform desired etching in an etching process in semiconductor manufacturing. A model representing etching parameters and an etching performance quantitative value at the time when etching is performed with the etching parameters is prepared in advance, and when desired etching is performed, optimal etching parameters are calculated from the model.

摘要翻译： 本发明涉及一种在半导体制造中在蚀刻工艺中自动计算最佳蚀刻参数以执行所需蚀刻的系统。 预先准备表示蚀刻参数的模型和使用蚀刻参数进行蚀刻时的蚀刻性能定量值，并且当需要蚀刻时，根据该模型计算最佳蚀刻参数。

公开(公告)号：US07216311B2

公开(公告)日：2007-05-08

申请号：US10648231

申请日：2003-08-27

申请人： Maki Tanaka ,  Chie Shishido ,  Ryo Nakagaki ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Ryo Nakagaki ,  Yuji Takagi

IPC分类号： G06F17/50 ,  G06F9/45 ,  G01N23/00

CPC分类号： H01L22/20 ,  G11C29/006 ,  G11C2029/0403 ,  G11C2029/5002 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to realize a means for acquiring three-dimensional shape information about patterns by nondestruction and evaluate a relationship between the three-dimensional shape information about these patterns and device properties, a semiconductor device pattern evaluating system is provided with a feature index calculating means for quantifying a property of a three-dimensional shape of a pattern to be evaluated, as feature index, a database that records therein a relationship between the feature index of each three-dimensional pattern shape and a device property of a circuit containing patterns each having the feature index, and a device property estimating means for estimating a property of a device circuit formed by the pattern to be evaluated, on the basis of the feature index of the three-dimensional pattern shape, which have been quantified by the feature index calculating means, and the information recorded in the database.

摘要翻译： 为了实现用于通过非破坏获取关于图案的三维形状信息的手段，并且评估关于这些图案的三维形状信息和装置特性之间的关系，半导体装置图案评估系统设置有特征指标计算装置， 量化要评估的图案的三维形状的属性作为特征索引，记录其中每个三维图案形状的特征索引与包含各自具有所述三维图案形状的图案的电路的装置特性之间的关系的数据库 特征索引，以及装置属性估计装置，用于根据由特征指标计算装置量化的三维图案形状的特征指标，估计由待评估图案形成的装置电路的特性 ，以及记录在数据库中的信息。

公开(公告)号：US06929892B2

公开(公告)日：2005-08-16

申请号：US10894044

申请日：2004-07-20

申请人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

发明人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

IPC分类号： H01L21/66 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70641 ,  G03F7/705 ,  G03F7/70625 ,  Y10S430/143

摘要： In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.

摘要翻译： 在曝光处理的监视中，通过曝光剂量的波动，焦点位置的横截面形状大幅度变化的高度隔离图案是观察对象。 特别地，为了检测从锥形轮廓到逆锥形轮廓的截面抗蚀剂形状的变化，采用以下观察方法之一来获得观察数据：（1）通过使用抗蚀剂图案的倾斜图像成像 倾斜成像电子显微镜，（2）抗蚀剂图案的电子束图像在用于在电子束信号波形上产生不对称的成像条件下成像，并且（3）通过光学测量系统获得抗蚀剂图案的散射特性数据。 将观测数据应用于根据曝光条件预先创建的模型数据，以估计曝光剂量和焦点位置的波动。

公开(公告)号：US07633061B2

公开(公告)日：2009-12-15

申请号：US12034696

申请日：2008-02-21

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

IPC分类号： H01J37/256 ,  G01B15/00 ,  G03F9/00

CPC分类号： G01B15/04 ,  G01N23/225 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

摘要翻译： 对电子束照射的电阻低的材料难以得到S / N比高的电子显微镜像。 常规的图像平滑处理可以提高测量的稳定性，但是该过程存在绝对值的测量误差，灵敏度的降低，立方体信息的质量劣化等的问题。 在本发明中，考虑到测定对象图案的尺寸偏差，通过进行图像平均化处理而不劣化信号波形的立方体信息，测量稳定性与精度和灵敏度的提高相一致。 因此，可以高精度地实现图案尺寸和形状的测量，并且可以使用该测量来控制高灵敏度的半导体制造工艺。

公开(公告)号：US06913861B2

公开(公告)日：2005-07-05

申请号：US10370369

申请日：2003-02-18

申请人： Chie Shishido ,  Osamu Komuro ,  Hidetoshi Morokuma ,  Ryo Nakagaki ,  Maki Tanaka ,  Yuuji Takagi

发明人： Chie Shishido ,  Osamu Komuro ,  Hidetoshi Morokuma ,  Ryo Nakagaki ,  Maki Tanaka ,  Yuuji Takagi

IPC分类号： G01B15/00 ,  G03F7/20 ,  G03F7/207 ,  H01J37/28 ,  H01L21/027 ,  G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70625 ,  G03F7/70641 ,  H01J37/28 ,  H01J2237/2817 ,  Y10S430/143

摘要： Size characteristic quantities are measured at a plural locations. The size characteristic quantities include edge widths, pattern widths, and/or pattern lengths of the electron-beam images of a resist-dropout pattern and a resist-remaining pattern that are located such that the effective exposure quantities differ depending on the places. With the predetermined measurement errors added thereto, the size characteristic quantities are compared with model data that has been created in advance and that causes various exposure conditions to be related with the size characteristic quantities measured under these various exposure conditions. This comparison makes it possible not only to estimate deviation quantities in the exposure quantity and the focal-point position from the correct values, but also to calculate ambiguity degrees of the estimated values. This, allows the implementation of a proper monitoring/controlling of the exposure-condition variations (i.e., the deviations in the exposure quantity and the focal-point position) in the lithography process.

摘要翻译： 在多个位置测量尺寸特征量。 尺寸特征量包括抗蚀剂落下图案和抗蚀剂剩余图案的电子束图像的边缘宽度，图案宽度和/或图案长度，其位置使得有效曝光量根据位置而不同。 随着预定的测量误差被添加到其中，将尺寸特征量与预先创建的模型数据进行比较，并使各种曝光条件与在这些各种曝光条件下测量的尺寸特征量相关。 该比较使得不仅可以从正确值估计曝光量和焦点位置中的偏差量，而且可以计算估计值的模糊度。 这允许在光刻工艺中实现曝光条件变化（即，曝光量和焦点位置的偏差）的适当监控/控制。

公开(公告)号：US20120126116A1

公开(公告)日：2012-05-24

申请号：US13387944

申请日：2010-07-15

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo ,  Mayuka Osaki

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo ,  Mayuka Osaki

IPC分类号： H01J37/26

CPC分类号： G01B15/04

摘要： The present invention has an object to propose a method and an apparatus for selecting a pattern shape, wherein, when estimating a shape based on comparison between an actual waveform and a library, the method and the apparatus can appropriately estimate the shape. As an embodiment to achieve the object, a method and an apparatus for selecting a pattern shape by comparing an obtained shape with pattern shapes memorized in the library are proposed, wherein plural pieces of waveform information are obtained under a plurality of waveform acquiring conditions based on radiation of a charged particle beam onto a specimen; and a pattern shape memorized in the library is selected by referring, with respect to the plural pieces of waveform information, to a library memorizing plural pieces of waveform information acquired under different waveform acquiring conditions for each of a plurality of pattern shapes.

摘要翻译： 本发明的目的是提出一种用于选择图案形状的方法和装置，其中，当基于实际波形和库之间的比较来估计形状时，该方法和装置可以适当地估计形状。 作为实现该目的的实施例，提出了一种通过将获得的形状与存储在库中的图案形状进行比较来选择图案形状的方法和装置，其中在多个波形获取条件基础上获得多条波形信息， 将带电粒子束辐射到样品上; 并且通过将关于多条波形信息参考多个图案形状中的每一个，记录存储在不同波形获取条件下获得的多条波形信息的库，选择存储在库中的图案形状。

公开(公告)号：US20080197280A1

公开(公告)日：2008-08-21

申请号：US12034696

申请日：2008-02-21

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

IPC分类号： G01B15/00

CPC分类号： G01B15/04 ,  G01N23/225 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

摘要翻译： 对电子束照射的电阻低的材料难以得到S / N比高的电子显微镜像。 常规的图像平滑处理可以提高测量的稳定性，但是该过程存在绝对值的测量误差，灵敏度的降低，立方体信息的质量劣化等的问题。 在本发明中，考虑到测定对象图案的尺寸偏差，通过进行图像平均化处理而不劣化信号波形的立方体信息，测量稳定性与精度和灵敏度的提高相一致。 因此，可以高精度地实现图案尺寸和形状的测量，并且可以使用该测量来控制高灵敏度的半导体制造工艺。

公开(公告)号：US20050037271A1

公开(公告)日：2005-02-17

申请号：US10894044

申请日：2004-07-20

申请人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

发明人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

IPC分类号： H01L21/66 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70641 ,  G03F7/705 ,  G03F7/70625 ,  Y10S430/143

摘要： In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.

公开(公告)号：US20090212215A1

公开(公告)日：2009-08-27

申请号：US12369774

申请日：2009-02-12

申请人： Wataru Nagatomo ,  Chie Shishido ,  Maki Tanaka

发明人： Wataru Nagatomo ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00

CPC分类号： G01N23/225

摘要： In dimension measurement of semiconductor pattern by CD-SEM, the error value between dimensional measurement value and actual dimension on the pattern is much variational as it is dependent on the cross-sectional shape of the pattern, and a low level of accuracy was one time a big problem. In the present invention, a plurality of patterns, each different in shape, were prepared beforehand with AFM measurement result and patterns of the same shape measured by CD-SEM. These measurement results and dimensional errors were homologized with each other and kept in a database. For actual measurement of dimensions, most like side wall shape, and corresponding CD-SEM measurement error result are called up, and the called-up error results are used to correct CD-SME results of measurement object patterns. In this manner, it becomes possible to correct or reduce dimensional error which is dependent on cross-sectional shape of the pattern.

摘要翻译： 通过CD-SEM对半导体图案的尺寸测量，尺寸测量值与图案上的实际尺寸之间的误差值是很大的变化，因为它取决于图案的截面形状，并且低水平的精度是一次 一个大问题。 在本发明中，通过AFM测定结果和通过CD-SEM测定的相同形状的图案，预先制作各种不同形状的图案。 将这些测量结果和尺寸误差彼此同源化并保存在数据库中。 对于尺寸的实际测量，调用大多数侧壁形状和相应的CD-SEM测量误差结果，并使用调用误差结果来校正测量对象图案的CD-SME结果。 以这种方式，可以校正或减小取决于图案的横截面形状的尺寸误差。

公开(公告)号：US07335881B2

公开(公告)日：2008-02-26

申请号：US11019995

申请日：2004-12-23

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/02 ,  G01B15/00

CPC分类号： G01N23/2251

摘要： With complexity of a process, the setting of conditions for pattern measurement by an SEM image falls into difficulties. However, the present invention aims to realize the setting of easy and reliable measuring conditions even with respect to a pattern complex in structure. Points characterized in terms of an SEM image signal are calculated as candidates for measurement values. The calculated candidates for measurement values are displayed with being superimposed on the SEM image. An operator selects the optimum one from the displayed candidates and thereby determines the optimum image processing condition for measurement. The relationship between the result of measurement under a predetermined image processing condition and pattern portions has been made clear using model data of a sectional shape and an electron beam simulation image.

摘要翻译： 由于处理的复杂性，通过SEM图像进行图案测定的条件的设定变得困难。 然而，本发明的目的在于即使对于结构上的图案复合体也能实现容易且可靠的测量条件的设定。 以SEM图像信号为特征的点被计算为测量值的候选。 计算出的测量值候选被叠加在SEM图像上。 操作者从所显示的候选者中选择最佳值，从而确定用于测量的最佳图像处理条件。 使用截面形状和电子束模拟图像的模型数据，在预定图像处理条件下的测量结果与图案部分之间的关​​系已经被清楚。