公开(公告)号：US20050016682A1

公开(公告)日：2005-01-27

申请号：US10893275

申请日：2004-07-19

申请人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  H01L21/31116 ,  H01L21/32136 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a system that automatically calculates optimal etching parameters in order to perform desired etching in an etching process in semiconductor manufacturing. A model representing etching parameters and an etching performance quantitative value at the time when etching is performed with the etching parameters is prepared in advance, and when desired etching is performed, optimal etching parameters are calculated from the model.

摘要翻译： 本发明涉及一种在半导体制造中在蚀刻工艺中自动计算最佳蚀刻参数以执行所需蚀刻的系统。 预先准备表示蚀刻参数的模型和使用蚀刻参数进行蚀刻时的蚀刻性能定量值，并且当需要蚀刻时，根据该模型计算最佳蚀刻参数。

公开(公告)号：US07216311B2

公开(公告)日：2007-05-08

申请号：US10648231

申请日：2003-08-27

申请人： Maki Tanaka ,  Chie Shishido ,  Ryo Nakagaki ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Ryo Nakagaki ,  Yuji Takagi

IPC分类号： G06F17/50 ,  G06F9/45 ,  G01N23/00

CPC分类号： H01L22/20 ,  G11C29/006 ,  G11C2029/0403 ,  G11C2029/5002 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to realize a means for acquiring three-dimensional shape information about patterns by nondestruction and evaluate a relationship between the three-dimensional shape information about these patterns and device properties, a semiconductor device pattern evaluating system is provided with a feature index calculating means for quantifying a property of a three-dimensional shape of a pattern to be evaluated, as feature index, a database that records therein a relationship between the feature index of each three-dimensional pattern shape and a device property of a circuit containing patterns each having the feature index, and a device property estimating means for estimating a property of a device circuit formed by the pattern to be evaluated, on the basis of the feature index of the three-dimensional pattern shape, which have been quantified by the feature index calculating means, and the information recorded in the database.

摘要翻译： 为了实现用于通过非破坏获取关于图案的三维形状信息的手段，并且评估关于这些图案的三维形状信息和装置特性之间的关系，半导体装置图案评估系统设置有特征指标计算装置， 量化要评估的图案的三维形状的属性作为特征索引，记录其中每个三维图案形状的特征索引与包含各自具有所述三维图案形状的图案的电路的装置特性之间的关系的数据库 特征索引，以及装置属性估计装置，用于根据由特征指标计算装置量化的三维图案形状的特征指标，估计由待评估图案形成的装置电路的特性 ，以及记录在数据库中的信息。

公开(公告)号：US06913861B2

公开(公告)日：2005-07-05

申请号：US10370369

申请日：2003-02-18

申请人： Chie Shishido ,  Osamu Komuro ,  Hidetoshi Morokuma ,  Ryo Nakagaki ,  Maki Tanaka ,  Yuuji Takagi

发明人： Chie Shishido ,  Osamu Komuro ,  Hidetoshi Morokuma ,  Ryo Nakagaki ,  Maki Tanaka ,  Yuuji Takagi

IPC分类号： G01B15/00 ,  G03F7/20 ,  G03F7/207 ,  H01J37/28 ,  H01L21/027 ,  G03F9/00 ,  G03C5/00

CPC分类号： G03F7/70625 ,  G03F7/70641 ,  H01J37/28 ,  H01J2237/2817 ,  Y10S430/143

摘要： Size characteristic quantities are measured at a plural locations. The size characteristic quantities include edge widths, pattern widths, and/or pattern lengths of the electron-beam images of a resist-dropout pattern and a resist-remaining pattern that are located such that the effective exposure quantities differ depending on the places. With the predetermined measurement errors added thereto, the size characteristic quantities are compared with model data that has been created in advance and that causes various exposure conditions to be related with the size characteristic quantities measured under these various exposure conditions. This comparison makes it possible not only to estimate deviation quantities in the exposure quantity and the focal-point position from the correct values, but also to calculate ambiguity degrees of the estimated values. This, allows the implementation of a proper monitoring/controlling of the exposure-condition variations (i.e., the deviations in the exposure quantity and the focal-point position) in the lithography process.

摘要翻译： 在多个位置测量尺寸特征量。 尺寸特征量包括抗蚀剂落下图案和抗蚀剂剩余图案的电子束图像的边缘宽度，图案宽度和/或图案长度，其位置使得有效曝光量根据位置而不同。 随着预定的测量误差被添加到其中，将尺寸特征量与预先创建的模型数据进行比较，并使各种曝光条件与在这些各种曝光条件下测量的尺寸特征量相关。 该比较使得不仅可以从正确值估计曝光量和焦点位置中的偏差量，而且可以计算估计值的模糊度。 这允许在光刻工艺中实现曝光条件变化（即，曝光量和焦点位置的偏差）的适当监控/控制。

公开(公告)号：US06476388B1

公开(公告)日：2002-11-05

申请号：US09421093

申请日：1999-10-19

申请人： Ryo Nakagaki ,  Yuji Takagi ,  Atsushi Shimoda ,  Kenji Obara ,  Yasuhiko Ozawa ,  Hideka Bamba ,  Seiji Isogai ,  Kenji Watanabe ,  Chie Shishido ,  Toshiei Kurosaki

发明人： Ryo Nakagaki ,  Yuji Takagi ,  Atsushi Shimoda ,  Kenji Obara ,  Yasuhiko Ozawa ,  Hideka Bamba ,  Seiji Isogai ,  Kenji Watanabe ,  Chie Shishido ,  Toshiei Kurosaki

IPC分类号： G21K700

CPC分类号： G01N23/225 ,  H01J37/222 ,  H01J37/265 ,  H01J2237/24495 ,  H01J2237/2485 ,  H01J2237/2817

摘要： The invention is a scanning electron microscope including a switching control unit for controlling to switch at least scanning unit to switch a digital image signal of a low magnification based on a wide image taking field of view to and from a digital image signal of a high magnification based on a narrow image taking field of view from an A/D conversion unit and a beam spot diameter control unit for controlling to switch a spot diameter of electron beam on a surface of an object substrate in controlling to switch the signals by the switching control unit and a defect portion analyzing method using the scanning electron microscope.

摘要翻译： 本发明是一种扫描电子显微镜，其特征在于，具备切换控制部，该切换控制部基于与高倍率的数字图像信号相对应的宽拍摄视场，至少切换扫描部，切换低倍率的数字图像信号 基于来自A / D转换单元的窄图像拍摄视场和光束光斑直径控制单元，用于控制通过切换控制切换信号来控制在对象基板的表面上切换电子束的光斑直径 单元和使用扫描电子显微镜的缺陷部分析方法。

公开(公告)号：US07164127B2

公开(公告)日：2007-01-16

申请号：US10988522

申请日：2004-11-16

申请人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

发明人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

IPC分类号： G01N23/00

CPC分类号： G01N23/225

摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.

摘要翻译： 本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响， 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。

公开(公告)号：US20050051721A1

公开(公告)日：2005-03-10

申请号：US10875509

申请日：2004-06-25

申请人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

发明人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

IPC分类号： G01B11/24 ,  G01B15/04 ,  G01N21/47 ,  G01N23/225 ,  H01J37/28 ,  H01L21/66 ,  G01N23/00

CPC分类号： G01N21/4788 ,  G01N23/225 ,  H01J2237/2816

摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, The method and apparatus for executing following steps of calculating an average of the dimensional values of said plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of said feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be required precisely by the above subject matter.

摘要翻译： 提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。 例如，用于执行以下步骤的方法和装置，用于计算所述多个扫描的特征对象的维度值的平均值; 并且基于所计算的平均值和当照射光时获得的所述特征对象的尺寸值之间的差异来计算尺寸值的偏移。 精确地通过上述主题来要求光学测量装置和扫描电子显微镜之间的测量值之间的偏移。

公开(公告)号：US20050247860A1

公开(公告)日：2005-11-10

申请号：US11119934

申请日：2005-05-03

申请人： Chie Shishido ,  Ryo Nakagaki ,  Mayuka Oosaki ,  Hiroki Kawada

发明人： Chie Shishido ,  Ryo Nakagaki ,  Mayuka Oosaki ,  Hiroki Kawada

IPC分类号： G01B15/00 ,  G01N23/00 ,  G01N23/225 ,  G21K7/00 ,  H01J37/22 ,  H01J37/28 ,  H01J40/14 ,  H01L21/66

CPC分类号： H01J37/28 ,  G01N23/225 ,  H01J37/222 ,  H01J37/263 ,  H01J2237/24578 ,  H01J2237/2817 ,  H01J2237/2823

摘要： The present invention relates to an electron microscope which reduces a difference in measured values that occur due to a difference in resolution that cannot be fully adjusted which exists among electron microscopes, or occurs as time elapses, and a method for measuring dimensions. An operator adapted to compensate for changes of an electron image to be generated due to a difference in probe diameter is obtained in advance from electron images of one reference sample created by electron microscopes having different resolution (probe diameter). Then a compensation-measurement electron image which is equivalent to an electron image created under the same probe diameter by applying the operator for compensation, and the compensation-measurement electron image is used for measuring the dimensions.

摘要翻译： 本发明涉及一种电子显微镜，其特征在于，减少由电子显微镜中存在的不能充分调整的分辨率的差异而发生的测量值的差异，或者随着时间的推移而发生的电子显微镜以及尺寸的测定方法。 从具有不同分辨率（探针直径）的电子显微镜产生的一个参考样品的电子图像预先获得适于补偿由于探针直径差引起的电子图像变化的操作者。 然后通过施加用于补偿的操作者，并且使用补偿测量电子图像来测量相当于在相同探针直径下产生的电子图像的补偿测量电子图像来测量尺寸。

公开(公告)号：US20050205780A1

公开(公告)日：2005-09-22

申请号：US10988522

申请日：2004-11-16

申请人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

发明人： Ryo Nakagaki ,  Hiroki Kawada ,  Chie Shishido ,  Mayuka Oosaki

IPC分类号： G01B15/00 ,  G01N23/00 ,  G01N23/225 ,  G03C5/00 ,  H01J37/28

CPC分类号： G01N23/225

摘要： The present invention relates to a CDSEM (scanning electron microscope) capable of evaluating and presenting the measurement repeatability as a tool with a high degree of accuracy without being influenced by fluctuations in micro-minute shape that tend to increase with the microminiaturization of semiconductor patterns, and to a method for evaluating accuracy of repeated measurement using the scanning electron microscope. There is provided a function whereby when measuring a plurality of times the same part to be measured, by making use of a micro-minute pattern shape such as the roughness included in the pattern, pattern matching with a roughness template image is performed to correct two-dimensional deviation in position of the part to be measured on an enlarged measurement image acquired, and then an enlarged measurement area image is extracted and acquired. This makes it possible to eliminate variation in measurements caused by the micro-minute pattern shape.

摘要翻译： 本发明涉及一种CDSEM（扫描电子显微镜），其能够以高精度评估和呈现作为工具的测量重复性，而不受半导体图案的微小化倾向于增加的微细形状的波动的影响， 以及使用扫描电子显微镜评价重复测定的精度的方法。 提供了一种功能，当通过利用包含在图案中的粗糙度的微细图案形状来测量多次相同的被测量部分时，执行与粗糙度模板图像的匹配，以校正两个 在获取的放大测量图像上待测量部分的位置的维度偏差，然后提取并获取放大的测量区域图像。 这使得可以消除由微微分图案形状引起的测量中的变化。

公开(公告)号：US07476856B2

公开(公告)日：2009-01-13

申请号：US10875509

申请日：2004-06-25

申请人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

发明人： Kenji Watanabe ,  Tadashi Otaka ,  Ryo Nakagaki ,  Chie Shishido ,  Masakazu Takahashi ,  Yuya Toyoshima

IPC分类号： G01N23/00 ,  G01B11/10

CPC分类号： G01N21/4788 ,  G01N23/225 ,  H01J2237/2816

摘要： A method and apparatus for efficiently executing two types of measurements with an optical measuring device and a scanning electron microscope are provided. For example, the method and apparatus may execute the following steps: calculating an average of the dimensional values of a plurality of scanned feature objects; and calculating an offset of a dimensional value on the basis of a difference between the calculated average value and the dimensional value of the feature object obtained when the light is irradiated. The offset between measurement values between the optical measuring device and the scanning electron microscope can be determined precisely.

摘要翻译： 提供了一种利用光学测量装置和扫描电子显微镜有效地执行两种测量的方法和装置。 例如，该方法和装置可以执行以下步骤：计算多个扫描的特征对象的维度值的平均值; 并且基于计算的平均值与照射光时获得的特征对象的尺寸值之间的差异来计算尺寸值的偏移。 可以精确地确定光学测量装置与扫描电子显微镜之间的测量值之间的偏移。

公开(公告)号：US07408155B2

公开(公告)日：2008-08-05

申请号：US11202146

申请日：2005-08-12

申请人： Mayuka Oosaki ,  Hiroki Kawada ,  Ryo Nakagaki ,  Chie Shishido

发明人： Mayuka Oosaki ,  Hiroki Kawada ,  Ryo Nakagaki ,  Chie Shishido

IPC分类号： G03F7/20 ,  G03F7/40

CPC分类号： G01N23/225

摘要： A method for measuring a dimension of a pattern formed on a sample using a secondary electron image obtained by picking up an image of the sample using a scanning electron microscope includes: obtaining a secondary electron image of a sample by picking up an image of the sample using a scanning electron microscope; creating, using the secondary electron image, an image profile of a pattern whose dimension is to be measured, within the obtained secondary electron image; retrieving a model profile that matches best with the created image profile from a plurality of model profiles prestored that are obtained from respective secondary electron images of a plurality of patterns, the cross sections of the plurality of patterns being of known shapes and dimensions and being different in shape; and obtaining a dimension of the pattern using information of the retrieved model profile.

摘要翻译： 使用通过使用扫描电子显微镜拾取样品的图像获得的二次电子图像来测量在样品上形成的图案的尺寸的方法包括：通过拾取样品的图像获得样品的二次电子图像 使用扫描电子显微镜; 在获得的二次电子图像中产生使用二次电子图像的尺寸要被测量的图案的图像轮廓; 从从多个图案的相应二次电子图像获得的预先存储的多个模型轮廓中检索与所创建的图像轮廓最佳匹配的模型轮廓，所述多个图案的横截面具有已知的形状和尺寸，并且是不同的 形状; 以及使用所检索的模型简档的信息来获得所述模式的维度。