公开(公告)号：US20120126116A1

公开(公告)日：2012-05-24

申请号：US13387944

申请日：2010-07-15

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo ,  Mayuka Osaki

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo ,  Mayuka Osaki

IPC分类号： H01J37/26

CPC分类号： G01B15/04

摘要： The present invention has an object to propose a method and an apparatus for selecting a pattern shape, wherein, when estimating a shape based on comparison between an actual waveform and a library, the method and the apparatus can appropriately estimate the shape. As an embodiment to achieve the object, a method and an apparatus for selecting a pattern shape by comparing an obtained shape with pattern shapes memorized in the library are proposed, wherein plural pieces of waveform information are obtained under a plurality of waveform acquiring conditions based on radiation of a charged particle beam onto a specimen; and a pattern shape memorized in the library is selected by referring, with respect to the plural pieces of waveform information, to a library memorizing plural pieces of waveform information acquired under different waveform acquiring conditions for each of a plurality of pattern shapes.

摘要翻译： 本发明的目的是提出一种用于选择图案形状的方法和装置，其中，当基于实际波形和库之间的比较来估计形状时，该方法和装置可以适当地估计形状。 作为实现该目的的实施例，提出了一种通过将获得的形状与存储在库中的图案形状进行比较来选择图案形状的方法和装置，其中在多个波形获取条件基础上获得多条波形信息， 将带电粒子束辐射到样品上; 并且通过将关于多条波形信息参考多个图案形状中的每一个，记录存储在不同波形获取条件下获得的多条波形信息的库，选择存储在库中的图案形状。

公开(公告)号：US20090212215A1

公开(公告)日：2009-08-27

申请号：US12369774

申请日：2009-02-12

申请人： Wataru Nagatomo ,  Chie Shishido ,  Maki Tanaka

发明人： Wataru Nagatomo ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00

CPC分类号： G01N23/225

摘要： In dimension measurement of semiconductor pattern by CD-SEM, the error value between dimensional measurement value and actual dimension on the pattern is much variational as it is dependent on the cross-sectional shape of the pattern, and a low level of accuracy was one time a big problem. In the present invention, a plurality of patterns, each different in shape, were prepared beforehand with AFM measurement result and patterns of the same shape measured by CD-SEM. These measurement results and dimensional errors were homologized with each other and kept in a database. For actual measurement of dimensions, most like side wall shape, and corresponding CD-SEM measurement error result are called up, and the called-up error results are used to correct CD-SME results of measurement object patterns. In this manner, it becomes possible to correct or reduce dimensional error which is dependent on cross-sectional shape of the pattern.

摘要翻译： 通过CD-SEM对半导体图案的尺寸测量，尺寸测量值与图案上的实际尺寸之间的误差值是很大的变化，因为它取决于图案的截面形状，并且低水平的精度是一次 一个大问题。 在本发明中，通过AFM测定结果和通过CD-SEM测定的相同形状的图案，预先制作各种不同形状的图案。 将这些测量结果和尺寸误差彼此同源化并保存在数据库中。 对于尺寸的实际测量，调用大多数侧壁形状和相应的CD-SEM测量误差结果，并使用调用误差结果来校正测量对象图案的CD-SME结果。 以这种方式，可以校正或减小取决于图案的横截面形状的尺寸误差。

公开(公告)号：US20080197280A1

公开(公告)日：2008-08-21

申请号：US12034696

申请日：2008-02-21

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

IPC分类号： G01B15/00

CPC分类号： G01B15/04 ,  G01N23/225 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

摘要翻译： 对电子束照射的电阻低的材料难以得到S / N比高的电子显微镜像。 常规的图像平滑处理可以提高测量的稳定性，但是该过程存在绝对值的测量误差，灵敏度的降低，立方体信息的质量劣化等的问题。 在本发明中，考虑到测定对象图案的尺寸偏差，通过进行图像平均化处理而不劣化信号波形的立方体信息，测量稳定性与精度和灵敏度的提高相一致。 因此，可以高精度地实现图案尺寸和形状的测量，并且可以使用该测量来控制高灵敏度的半导体制造工艺。

公开(公告)号：US20050037271A1

公开(公告)日：2005-02-17

申请号：US10894044

申请日：2004-07-20

申请人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

发明人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

IPC分类号： H01L21/66 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70641 ,  G03F7/705 ,  G03F7/70625 ,  Y10S430/143

摘要： In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.

公开(公告)号：US06929892B2

公开(公告)日：2005-08-16

申请号：US10894044

申请日：2004-07-20

申请人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

发明人： Chie Shishido ,  Hidetoshi Morokuma ,  Yuki Ojima ,  Maki Tanaka ,  Wataru Nagatomo

IPC分类号： H01L21/66 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70641 ,  G03F7/705 ,  G03F7/70625 ,  Y10S430/143

摘要： In monitoring of an exposure process, a highly isolative pattern greatly changed in a shape of cross section by fluctuations in the exposure dose and the focal position is an observation target. Especially, to detect a change in a resist shape of cross section from a tapered profile to an inverse tapered profile, one of the following observation methods is employed to obtain observation data: (1) a tilt image of a resist pattern is imaged by using tilt imaging electron microscopy, (2) an electron beam image of a resist pattern is imaged under imaging conditions for generating asymmetry on an electron beam signal waveform, and (3) scattering characteristic data of a resist pattern is obtained by an optical measurement system. The observation data is applied to model data created beforehand in accordance with the exposure conditions to estimate fluctuations in the exposure dose and the focal position.

摘要翻译： 在曝光处理的监视中，通过曝光剂量的波动，焦点位置的横截面形状大幅度变化的高度隔离图案是观察对象。 特别地，为了检测从锥形轮廓到逆锥形轮廓的截面抗蚀剂形状的变化，采用以下观察方法之一来获得观察数据：（1）通过使用抗蚀剂图案的倾斜图像成像 倾斜成像电子显微镜，（2）抗蚀剂图案的电子束图像在用于在电子束信号波形上产生不对称的成像条件下成像，并且（3）通过光学测量系统获得抗蚀剂图案的散射特性数据。 将观测数据应用于根据曝光条件预先创建的模型数据，以估计曝光剂量和焦点位置的波动。

公开(公告)号：US20050016682A1

公开(公告)日：2005-01-27

申请号：US10893275

申请日：2004-07-19

申请人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Wataru Nagatomo ,  Ryo Nakagaki ,  Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/66 ,  C23F1/00

CPC分类号： H01L22/20 ,  H01L21/31116 ,  H01L21/32136 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a system that automatically calculates optimal etching parameters in order to perform desired etching in an etching process in semiconductor manufacturing. A model representing etching parameters and an etching performance quantitative value at the time when etching is performed with the etching parameters is prepared in advance, and when desired etching is performed, optimal etching parameters are calculated from the model.

摘要翻译： 本发明涉及一种在半导体制造中在蚀刻工艺中自动计算最佳蚀刻参数以执行所需蚀刻的系统。 预先准备表示蚀刻参数的模型和使用蚀刻参数进行蚀刻时的蚀刻性能定量值，并且当需要蚀刻时，根据该模型计算最佳蚀刻参数。

公开(公告)号：US07633061B2

公开(公告)日：2009-12-15

申请号：US12034696

申请日：2008-02-21

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

IPC分类号： H01J37/256 ,  G01B15/00 ,  G03F9/00

CPC分类号： G01B15/04 ,  G01N23/225 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

摘要翻译： 对电子束照射的电阻低的材料难以得到S / N比高的电子显微镜像。 常规的图像平滑处理可以提高测量的稳定性，但是该过程存在绝对值的测量误差，灵敏度的降低，立方体信息的质量劣化等的问题。 在本发明中，考虑到测定对象图案的尺寸偏差，通过进行图像平均化处理而不劣化信号波形的立方体信息，测量稳定性与精度和灵敏度的提高相一致。 因此，可以高精度地实现图案尺寸和形状的测量，并且可以使用该测量来控制高灵敏度的半导体制造工艺。

公开(公告)号：US20050221207A1

公开(公告)日：2005-10-06

申请号：US10988558

申请日：2004-11-16

申请人： Wataru Nagatomo ,  Chie Shishido ,  Hidetoshi Morokuma

发明人： Wataru Nagatomo ,  Chie Shishido ,  Hidetoshi Morokuma

IPC分类号： A61N5/00 ,  G03C5/00 ,  G03F7/20 ,  G03F9/00 ,  G21G5/00 ,  H01L21/027

CPC分类号： G03F7/705 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

摘要： An exposure process monitoring method capable of performing quantitative monitoring of an exposure amount and a focusing position which are major process parameters during exposure using a Levinson phase shift mask in semiconductor lithography processes is disclosed. During exposure using the Levinson phase shift mask, the focus position is influenceable by optical intensity distribution characteristics so that it can vary from its minus (−) to plus (+) directions by in a way depending upon the pitch width and line width of a line-and-space pattern. In such case, there exist a pattern in which the cross-sectional shape of a resist changes from a forward taper to reverse taper and a pattern in which the sectional shape changes from the reverse to forward taper.

摘要翻译： 公开了一种在半导体光刻工艺中能够使用利文森相移掩模在曝光期间对作为主要工艺参数的曝光量和聚焦位置进行定量监测的曝光过程监控方法。 在使用莱文森相移掩模的曝光期间，聚焦位置可以通过光强度分布特性来影响，使得它可以通过取决于音调宽度和线宽度的方式从它的负（ - ）到+（+）方向变化 线和空间模式。 在这种情况下，存在其中抗蚀剂的横截面形状从正向锥形变成反向锥形的图案，以及截面形状从反向变化到向前锥度的图案。

公开(公告)号：US07685560B2

公开(公告)日：2010-03-23

申请号：US10988558

申请日：2004-11-16

申请人： Wataru Nagatomo ,  Chie Shishido ,  Hidetoshi Morokuma

发明人： Wataru Nagatomo ,  Chie Shishido ,  Hidetoshi Morokuma

IPC分类号： G06F17/50 ,  G06K9/00 ,  G06F19/00

CPC分类号： G03F7/705 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683

摘要： An exposure process monitoring method capable of performing quantitative monitoring of an exposure amount and a focusing position which are major process parameters during exposure using a Levinson phase shift mask in semiconductor lithography processes is disclosed. During exposure using the Levinson phase shift mask, the focus position is influenceable by optical intensity distribution characteristics so that it can vary from its minus (−) to plus (+) directions by in a way depending upon the pitch width and line width of a line-and-space pattern. In such case, there exist a pattern in which the cross-sectional shape of a resist changes from a forward taper to reverse taper and a pattern in which the sectional shape changes from the reverse to forward taper.

摘要翻译： 公开了一种在半导体光刻工艺中能够使用利文森相移掩模在曝光期间对作为主要工艺参数的曝光量和聚焦位置进行定量监测的曝光过程监控方法。 在使用莱文森相移掩模的曝光期间，聚焦位置可以通过光强度分布特性来影响，使得它可以通过取决于音调宽度和线宽度的方式从它的负（ - ）到+（+）方向变化 线和空间模式。 在这种情况下，存在其中抗蚀剂的横截面形状从正向锥形变成反向锥形的图案，以及截面形状从反向变化到向前锥度的图案。

公开(公告)号：US08214166B2

公开(公告)日：2012-07-03

申请号：US12137779

申请日：2008-06-12

申请人： Maki Tanaka ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Wataru Nagatomo

IPC分类号： G01P21/00

CPC分类号： H01J37/263 ,  H01J37/222 ,  H01J2237/221 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2815 ,  H01J2237/2816 ,  H01J2237/2817 ,  H01J2237/2823 ,  H01J2237/2826

摘要： A method, and a corresponding system, are provided for calibrating data of an object measured by different measuring tools, including measuring a Critical-Dimension (CD) and roughness of an object by using a CD-SEM tool, calculating a number of cross section measurement points required for calibration, by statistically processing the roughness of the object, measuring the cross section of the object by using a cross section measuring tool to obtain cross section data at the calculated number of cross section measurement points, calculating the average measurement of the cross section measurement height, and calculating a calibration correction value that is a function of a difference between the average CD measurement of the object and the average measurement of the cross section measurement height of the object.

摘要翻译： 提供了一种方法和相应的系统，用于校准由不同测量工具测量的物体的数据，包括通过使用CD-SEM工具测量物体的临界尺寸（CD）和粗糙度，计算横截面数 校准所需的测量点，通过统计学处理物体的粗糙度，通过使用横截面测量工具测量物体的横截面，以在计算出的横截面测量点的数量上获得横截面数据，计算平均测量值 横截面测量高度，以及计算作为对象的平均CD测量与对象的横截面测量高度的平均测量之间的差的函数的校准校正值。