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    Vibration welding system with thin film sensor
    1.
    发明授权
    Vibration welding system with thin film sensor 有权
    具有薄膜传感器的振动焊接系统

    公开(公告)号：US08672211B2

    公开(公告)日：2014-03-18

    申请号：US13474891

    申请日：2012-05-18

    申请人： Wayne W. Cai ,  Jeffrey A. Abell ,  Xiaochun Li ,  Hang Li ,  Hongseok Choi ,  Jingzhou Zhao

    发明人： Wayne W. Cai ,  Jeffrey A. Abell ,  Xiaochun Li ,  Hang Li ,  Hongseok Choi ,  Jingzhou Zhao

    IPC分类号： B23K31/02 ,  B23K20/10 ,  B29C65/08

    CPC分类号： B23K20/10 ,  B23K20/106 ,  B29C65/08 ,  B29C66/1122 ,  B29C66/45 ,  B29C66/91212 ,  B29C66/9512 ,  B29C66/9513 ,  B29C66/9516

    摘要： A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

    摘要翻译： 振动焊接系统包括砧座，焊接喇叭，薄膜传感器和过程控制器。 砧座和喇叭包括在焊接过程中接触工件的工作表面。 传感器测量工作表面的控制值。 测量的控制值被发送到控制器，控制器部分地使用测量的控制值来控制系统。 薄膜传感器可以包括多个热电堆和热电偶，其共同测量工作表面处的温度和热通量。 一种方法包括：向焊接设备提供邻近焊接设备的工作表面的槽，将薄膜传感器插入槽中，并使用传感器来测量工作表面上的控制值。 然后，过程控制器部分地使用测量的控制值来控制振动焊接系统。

    VIBRATION WELDING SYSTEM WITH THIN FILM SENSOR
    2.
    发明申请
    VIBRATION WELDING SYSTEM WITH THIN FILM SENSOR 有权
    具有薄膜传感器的振动焊接系统

    公开(公告)号：US20130306216A1

    公开(公告)日：2013-11-21

    申请号：US13474891

    申请日：2012-05-18

    申请人： Wayne W. Cai ,  Jeffrey A. Abell ,  Xiaochun Li ,  Hang Li ,  Hongseok Choi ,  Jingzhou Zhao

    发明人： Wayne W. Cai ,  Jeffrey A. Abell ,  Xiaochun Li ,  Hang Li ,  Hongseok Choi ,  Jingzhou Zhao

    IPC分类号： B32B37/06 ,  B23K20/10 ,  B32B41/00

    CPC分类号： B23K20/10 ,  B23K20/106 ,  B29C65/08 ,  B29C66/1122 ,  B29C66/45 ,  B29C66/91212 ,  B29C66/9512 ,  B29C66/9513 ,  B29C66/9516

    摘要： A vibration welding system includes an anvil, a welding horn, a thin film sensor, and a process controller. The anvil and horn include working surfaces that contact a work piece during the welding process. The sensor measures a control value at the working surface. The measured control value is transmitted to the controller, which controls the system in part using the measured control value. The thin film sensor may include a plurality of thermopiles and thermocouples which collectively measure temperature and heat flux at the working surface. A method includes providing a welder device with a slot adjacent to a working surface of the welder device, inserting the thin film sensor into the slot, and using the sensor to measure a control value at the working surface. A process controller then controls the vibration welding system in part using the measured control value.

    摘要翻译： 振动焊接系统包括砧座，焊接喇叭，薄膜传感器和过程控制器。 砧座和喇叭包括在焊接过程中接触工件的工作表面。 传感器测量工作表面的控制值。 测量的控制值被发送到控制器，控制器部分地使用测量的控制值来控制系统。 薄膜传感器可以包括多个热电堆和热电偶，其共同测量工作表面处的温度和热通量。 一种方法包括：向焊接设备提供邻近焊接设备的工作表面的槽，将薄膜传感器插入槽中，并使用传感器来测量工作表面上的控制值。 然后，过程控制器部分地使用测量的控制值来控制振动焊接系统。

    MICROELECTRONICS GRADE METAL SUBSTRATE, RELATED METAL-EMBEDDED DEVICES AND METHODS FOR FABRICATING SAME
    3.
    发明申请
    MICROELECTRONICS GRADE METAL SUBSTRATE, RELATED METAL-EMBEDDED DEVICES AND METHODS FOR FABRICATING SAME 审中-公开
    微电子等级金属基板，相关金属嵌入式器件及其制造方法

    公开(公告)号：US20090291313A1

    公开(公告)日：2009-11-26

    申请号：US12506375

    申请日：2009-07-21

    申请人： Arindom Datta ,  Xiaochun Li ,  Hongseok Choi

    发明人： Arindom Datta ,  Xiaochun Li ,  Hongseok Choi

    IPC分类号： B32B15/04 ,  C23F1/00

    CPC分类号： C23C26/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345

    摘要： Fabricating a microelectronics grade metal substrate comprises forming the metal substrate on a sacrificial substrate. An adhesion layer can be deposited on or over the surface of the sacrificial substrate. A seed layer of the metal can be deposited on or over the adhesion layer. The metal material can be deposited on the seed layer by electroplating or other low-temperature, low-stress process to form a microelectronics-grade metal substrate. Thin film sensors and/or other microelectronic devices, followed by appropriate insulating layer(s), may be fabricated on or over the sacrificial substrate before forming the metal substrate. The sacrificial silicon substrate can then be etched away, leaving the microelectronics-grade metal substrate, and possibly the microelectronics device. Another insulating layer(s), followed by another adhesion layer, another seed layer and additional amounts of the material forming the metal substrate can then be deposited over the now-exposed microelectronics device to encapsulate it within a metal shell.

    摘要翻译： 制造微电子级金属基板包括在牺牲基板上形成金属基板。 粘附层可以沉积在牺牲基板的表面上或上方。 金属的种子层可以沉积在粘合层上或上方。 金属材料可以通过电镀或其他低温，低应力工艺沉积在晶种层上，形成微电子级金属基片。 在形成金属基板之前，可以在牺牲基板之上或之上制造薄膜传感器和/或其它微电子器件，随后是适当的绝缘层。 然后牺牲硅衬底被蚀刻掉，留下微电子级金属衬底，以及可能的微电子器件。 然后可以在现在暴露的微电子器件上沉积另一个绝缘层，随后是另一个粘合层，另一种子层和附加量的形成金属基底的材料以将其包封在金属壳内。

    NANOMATERIAL-BASED METHODS AND APPARATUSES
    6.
    发明申请
    NANOMATERIAL-BASED METHODS AND APPARATUSES 有权
    基于纳米材料的方法和装置

    公开(公告)号：US20130236352A1

    公开(公告)日：2013-09-12

    申请号：US13418225

    申请日：2012-03-12

    申请人： Xiaochun Li ,  Lianyi Chen ,  Hongseok Choi ,  Jiaquan Xu

    发明人： Xiaochun Li ,  Lianyi Chen ,  Hongseok Choi ,  Jiaquan Xu

    IPC分类号： C22B9/00

    CPC分类号： C22B9/00 ,  C22C1/1036 ,  C22C32/0036

    摘要： Nanomaterials are incorporated within a material, such as within a metal-based material. As may be implemented in accordance with various embodiments, nanomaterials are introduced to a metal-based material in a liquid state, and the metal-based material and nanomaterials are cooled from the liquid state to a viscous state. The metal-based material is stirred in the viscous state to disperse the nanomaterials therein, and the metal-based material is used in the viscous state to maintain dispersion of the nanomaterials as the metal-based material cools.

    摘要翻译： 纳米材料结合在材料内，例如在金属基材料内。 可以根据各种实施方案实施，将纳米材料以液态引入到基于金属的材料中，并且将金属基材料和纳米材料从液态冷却至粘性状态。 金属基材料在粘性状态下搅拌以将纳米材料分散在其中，并且金属基材料以粘性状态使用，以在金属基材料冷却时保持纳米材料的分散。

    Apparatus and method of dispensing small-scale powders
    8.
    发明申请
    Apparatus and method of dispensing small-scale powders 有权
    分配小规模粉末的装置和方法

    公开(公告)号：US20050211163A1

    公开(公告)日：2005-09-29

    申请号：US10841227

    申请日：2004-05-07

    申请人： Xiaochun Li ,  Yong Yang ,  Hongseok Choi

    发明人： Xiaochun Li ,  Yong Yang ,  Hongseok Choi

    IPC分类号： B05B7/00 ,  C23C24/00 ,  C23C24/08 ,  C23C24/10 ,  C23C26/02 ,  H05K3/10

    CPC分类号： C23C24/00 ,  B33Y30/00 ,  B33Y40/00 ,  C23C24/08 ,  C23C24/10 ,  C23C26/02 ,  H05K3/102 ,  H05K2203/0126 ,  H05K2203/107 ,  H05K2203/1131

    摘要： An apparatus and method of dispensing small-scale powders for a variety of applications, including, for example, fabricating a three-dimensional heterogeneous small-scale device, includes using a feed mechanism that causes motion of the powder particles and the steps of depositing fine heterogeneous materials (such as dry powders and biological materials) towards a substrate. The depositing step preferably includes providing a feed mechanism having an input to receive the material, an output, and a source of ultrasonic vibration to impart a torsional force on the material so as to precisely discharge the material from the output. To improve particle flowability, a cooling system is provided to cool the source, generally above a threshold input voltage.

    摘要翻译： 分配用于各种应用的小规模粉末的装置和方法，包括例如制造三维异质小规模装置，包括使用引起粉末颗粒运动的进料机构和沉积微细的步骤 异质材料（如干粉和生物材料）朝向基材。 沉积步骤优选地包括提供进料机构，其具有用于接收材料的输入端，输出端和超声波振动源，以在材料上施加扭转力，从而将材料从输出精确地排出。 为了改善颗粒流动性，提供冷却系统以冷却源，通常高于阈值输入电压。

    Microelectronics grade metal substrate, related metal-embedded devices and methods for fabricating same
    10.
    发明申请
    Microelectronics grade metal substrate, related metal-embedded devices and methods for fabricating same 有权
    微电子级金属基板，相关金属嵌入式器件及其制造方法

    公开(公告)号：US20070092995A1

    公开(公告)日：2007-04-26

    申请号：US11255892

    申请日：2005-10-21

    申请人： Arindom Datta ,  Xiaochun Li ,  Hongseok Choi

    发明人： Arindom Datta ,  Xiaochun Li ,  Hongseok Choi

    IPC分类号： H01L21/00 ,  H01L23/02 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： C23C26/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345

    摘要： Fabricating a microelectronics grade metal substrate comprises forming the metal substrate on a sacrificial substrate. An adhesion layer can be deposited on or over the surface of the sacrificial substrate. A seed layer of the metal can be deposited on or over the adhesion layer. The metal material can be deposited on the seed layer by electroplating or other low-temperature, low-stress process to form a microelectronics-grade metal substrate. Thin film sensors and/or other microelectronic devices, followed by appropriate insulating layer(s), may be fabricated on or over the sacrificial substrate before forming the metal substrate. The sacrificial silicon substrate can then be etched away, leaving the microelectronics-grade metal substrate, and possibly the microelectronics device. Another insulating layer(s), followed by another adhesion layer, another seed layer and additional amounts of the material forming the metal substrate can then be deposited over the now-exposed microelectronics device to encapsulate it within a metal shell.

    摘要翻译： 制造微电子级金属基板包括在牺牲基板上形成金属基板。 粘附层可以沉积在牺牲基板的表面上或上方。 金属的种子层可以沉积在粘合层上或上方。 金属材料可以通过电镀或其他低温，低应力工艺沉积在晶种层上，形成微电子级金属基片。 在形成金属基板之前，可以在牺牲基板之上或之上制造薄膜传感器和/或其它微电子器件，随后是适当的绝缘层。 然后牺牲硅衬底被蚀刻掉，留下微电子级金属衬底，以及可能的微电子器件。 然后可以在现在暴露的微电子器件上沉积另一个绝缘层，随后是另一个粘合层，另一种子层和附加量的形成金属基底的材料以将其包封在金属壳内。