公开(公告)号：US08010307B2

公开(公告)日：2011-08-30

申请号：US11951173

申请日：2007-12-05

申请人： Wei Fang ,  Jack Y. Jau ,  Hong Xiao

发明人： Wei Fang ,  Jack Y. Jau ,  Hong Xiao

IPC分类号： G06F19/00

CPC分类号： G03F7/70283 ,  G03F1/00 ,  G03F7/70633 ,  H01L22/20

摘要： A method and system for controlling an overlay shift on an integrated circuit is disclosed. The method and system comprises utilizing a scanning electron microscope (SEM) to measure the overlay shift between a first mask and a second mask of the circuit after a second mask and comparing the overlay shift to information about the integrated circuit in a database. The method and system includes providing a control mechanism to analyze the overlay shift and feed forward to the fabrication process before a third mask for error correction. A system and method in accordance with the present invention advantageously utilizes a scanning electron microscope (SEM) image overlay measurement after the fabrication process such as etching and chemical mechanical polishing (CMP).

摘要翻译： 公开了一种用于控制集成电路上的覆盖移位的方法和系统。 该方法和系统包括利用扫描电子显微镜（SEM）在第二掩模之后测量电路的第一掩模和第二掩模之间的覆盖位移，并将覆盖位移与数据库中的集成电路的信息进行比较。 该方法和系统包括提供控制机构以分析覆盖位移并在用于纠错的第三掩模之前向前馈到制造过程。 根据本发明的系统和方法有利地在诸如蚀刻和化学机械抛光（CMP）的制造工艺之后利用扫描电子显微镜（SEM）图像覆盖测量。

公开(公告)号：US20080215276A1

公开(公告)日：2008-09-04

申请号：US11951173

申请日：2007-12-05

申请人： Wei Fang ,  Jack Y. Jau ,  Hong Xiao

发明人： Wei Fang ,  Jack Y. Jau ,  Hong Xiao

IPC分类号： G06F19/00

CPC分类号： G03F7/70283 ,  G03F1/00 ,  G03F7/70633 ,  H01L22/20

摘要： A method and system for controlling an overlay shift on an integrated circuit is disclosed. The method and system comprises utilizing a scanning electron microscope (SEM) to measure the overlay shift between a first mask and a second mask of the circuit after a second mask and comparing the overlay shift to information about the integrated circuit in a database. The method and system includes providing a control mechanism to analyze the overlay shift and feed forward to the fabrication process before a third mask for error correction.A system and method in accordance with the present invention advantageously utilizes a scanning electron microscope (SEM) image overlay measurement after the fabrication process such as etching and chemical mechanical polishing (CMP).

摘要翻译： 公开了一种用于控制集成电路上的覆盖移位的方法和系统。 该方法和系统包括利用扫描电子显微镜（SEM）在第二掩模之后测量电路的第一掩模和第二掩模之间的覆盖位移，并将覆盖位移与数据库中的集成电路的信息进行比较。 该方法和系统包括提供控制机构以分析覆盖位移并在用于纠错的第三掩模之前向前馈到制造过程。 根据本发明的系统和方法有利地在诸如蚀刻和化学机械抛光（CMP）的制造工艺之后利用扫描电子显微镜（SEM）图像覆盖测量。

公开(公告)号：US20080175468A1

公开(公告)日：2008-07-24

申请号：US11626795

申请日：2007-01-24

申请人： Jack Y. Jau ,  Zhaoli Zhang ,  Wei Fang

发明人： Jack Y. Jau ,  Zhaoli Zhang ,  Wei Fang

IPC分类号： G06T7/00

CPC分类号： G06T7/001 ,  G06K9/6228 ,  G06K9/6253 ,  G06T2207/30148

摘要： A method and system for creating knowledge and selecting features in a supervised classifier is disclosed. The method and system comprises changing a feature space of a plurality of defects and marking at least a portion of the samples of the defects in the feature space. The method and system includes labeling the at least a portion of the samples as training samples, determining if the training samples are of the same type and creating knowledge based upon the training samples if the samples are of the same type.

摘要翻译： 公开了一种在监督分类器中创建知识和选择特征的方法和系统。 该方法和系统包括改变多个缺陷的特征空间并标记特征空间中的缺陷样本的至少一部分。 所述方法和系统包括将所述样本的至少一部分标记为训练样本，确定所述训练样本是否是相同类型，并且如果所述样本是相同类型，则基于所述训练样本创建知识。

公开(公告)号：US09035674B2

公开(公告)日：2015-05-19

申请号：US13323634

申请日：2011-12-12

申请人： Hong Xiao ,  Jack Y. Jau ,  Chang Chun Yeh

发明人： Hong Xiao ,  Jack Y. Jau ,  Chang Chun Yeh

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L22/24

摘要： The present invention discloses a structure and method for determining a defect in integrated circuit manufacturing process, wherein the structure comprises a plurality of normal active areas formed in a plurality of first arrays and a plurality of defective active areas formed in a plurality of second arrays. The first arrays and second arrays are interlaced, and the defect is determined by monitoring a voltage contrast from a charged particle microscope image of the active areas.

摘要翻译： 本发明公开了一种用于确定集成电路制造过程中的缺陷的结构和方法，其中该结构包括形成在多个第一阵列中的多个正常有源区和形成在多个第二阵列中的多个有缺陷的有源区。 第一阵列和第二阵列是交错的，并且通过监视来自有源区域的带电粒子显微镜图像的电压对比来确定缺陷。

公开(公告)号：US08748815B2

公开(公告)日：2014-06-10

申请号：US11515328

申请日：2006-08-31

申请人： Frederick Y. Zhao ,  Jack Y. Jau

发明人： Frederick Y. Zhao ,  Jack Y. Jau

IPC分类号： H01J37/28

CPC分类号： G01R31/307 ,  G01R31/2621

摘要： A method and system for detecting or reviewing defective contacts on a semiconductor device are disclosed. In a first embodiment, the method and system comprise providing a positive charge sufficient enough to turn on a gate of an associated MOS device and scanning an area of interest within the MOS device with a primary electron beam of proper landing energy to generate image. The method and system include analyzing the signal of contacts and identify the open contacts. In a second embodiment, the method and system comprises pre-scanning or irradiating the wafer surface defect with an accessory beam, a plurality of times, to achieve positive charged/sufficient to turn on the gate on the associated MOS devices of the wafer; and scanning the at least a portion of the device circuits with a primary electron beam of proper landing energy to generate images wafer or area of interest. The method and system include analyzing the signal and/or image of contacts and identify the open contacts.

摘要翻译： 公开了一种用于检测或检查半导体器件上的有缺陷接触的方法和系统。 在第一实施例中，该方法和系统包括提供足够大的正电荷以使相关MOS器件的栅极导通，并且利用具有适当着落能量的一次电子束扫描MOS器件内的感兴趣区域以产生图像。 该方法和系统包括分析接触信号并识别开放接触。 在第二实施例中，该方法和系统包括用附件光束预先扫描或照射晶片表面缺陷多次，以实现正电荷/足以使晶片的相关联的MOS器件上的栅极导通; 以及用适当着陆能量的一次电子束扫描该装置电路的至少一部分，以生成图像晶片或感兴趣的区域。 该方法和系统包括分析触点的信号和/或图像并识别开放的触点。

公开(公告)号：US5717204A

公开(公告)日：1998-02-10

申请号：US606854

申请日：1996-02-26

申请人： Dan Meisburger ,  Alan D. Brodie ,  Zhong-Wei Chen ,  Jack Y. Jau

发明人： Dan Meisburger ,  Alan D. Brodie ,  Zhong-Wei Chen ,  Jack Y. Jau

IPC分类号： H01J37/28 ,  H01J37/30 ,  H01J37/26

CPC分类号： H01J37/28 ,  H01J37/3005 ,  H01J2237/2817

摘要： An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.

摘要翻译： 一种装置通过光学相移掩模扫描电子束，并自动检查掩模以确定相移掩模的特征和缺陷的分类。 电子束指向掩模的表面以扫描该掩模，并且提供检测器以从掩模的表面测量次级和背散射带电粒子。 掩模安装在x-y平台上，以在掩模被电子束扫描时提供至少一个自由度。 通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征，可以检测掩模的各种物理特征以及它们的尺寸和位置。 也可以确定铬层的厚度。 在检查配置中，还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。

公开(公告)号：US20080054931A1

公开(公告)日：2008-03-06

申请号：US11515328

申请日：2006-08-31

申请人： Frederick Y. Zhao ,  Jack Y. Jau

发明人： Frederick Y. Zhao ,  Jack Y. Jau

IPC分类号： G01R31/26

CPC分类号： G01R31/307 ,  G01R31/2621

摘要： A method and system for detecting or reviewing defective contacts on a semiconductor device are disclosed. In a first embodiment, the method and system comprise providing a positive charge sufficient enough to turn on a gate of an associated MOS device and scanning an area of interest within the MOS device with a primary electron beam of proper landing energy to generate image. The method and system include analyzing the signal of contacts and identify the open contacts. In a second embodiment, the method and system comprises pre-scanning or irradiating the wafer surface defect with an accessory beam, a plurality of times, to achieve positive charged/sufficient to turn on the gate on the associated MOS devices of the wafer; and scanning the at least a portion of the device circuits with a primary electron beam of proper landing energy to generate images wafer or area of interest. The method and system include analyzing the signal and/or image of contacts and identify the open contacts.

摘要翻译： 公开了一种用于检测或检查半导体器件上的有缺陷接触的方法和系统。 在第一实施例中，该方法和系统包括提供足够大的正电荷以使相关MOS器件的栅极导通，并且利用具有适当着落能量的一次电子束扫描MOS器件内的感兴趣区域以产生图像。 该方法和系统包括分析接触信号并识别开放接触。 在第二实施例中，该方法和系统包括用附件光束预先扫描或照射晶片表面缺陷多次，以实现正电荷/足以使晶片的相关联的MOS器件上的栅极导通; 以及用适当着陆能量的一次电子束扫描该装置电路的至少一部分，以生成图像晶片或感兴趣的区域。 该方法和系统包括分析触点的信号和/或图像并识别开放的触点。

公开(公告)号：US06710342B1

公开(公告)日：2004-03-23

申请号：US09668697

申请日：2000-09-22

申请人： Jack Y. Jau ,  Zhong Wei Chen

发明人： Jack Y. Jau ,  Zhong Wei Chen

IPC分类号： G01N2304

CPC分类号： H01J37/265 ,  G01N23/2251 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus and method for scanning the surface of a specimen is disclosed for defect inspection purposes. Scanning Electron Microscope (SEM) is used to scan the surface of a specimen. The scanning method employed by the SEM comprises the steps of: generating a particle beam from a particle beam emitter, and scanning the surface of the specimen by deflecting the particle beam at an angle with respect to the surface of the specimen, wherein the particle beam traverses an angle that is not parallel or perpendicular to the orientation of the specimen. The specimen being scanned is a semiconductor wafer or a photo mask.

摘要翻译： 为了缺陷检查目的公开了用于扫描试样表面的装置和方法。 扫描电子显微镜（SEM）用于扫描样品表面。 SEM采用的扫描方法包括以下步骤：从粒子束发射器产生粒子束，并通过相对于样品表面以一定角度偏转粒子束来扫描样品表面，其中粒子束 穿过不平行或垂直于样品取向的角度。 被扫描的样本是半导体晶片或光掩模。

公开(公告)号：US5665968A

公开(公告)日：1997-09-09

申请号：US607191

申请日：1996-02-26

申请人： Dan Meisburger ,  Alan D. Brodie ,  Zhong-Wei Chen ,  Jack Y. Jau ,  Brian J. Grenon

发明人： Dan Meisburger ,  Alan D. Brodie ,  Zhong-Wei Chen ,  Jack Y. Jau ,  Brian J. Grenon

IPC分类号： H01J37/28 ,  H01J37/30 ,  H01J37/26

CPC分类号： H01J37/28 ,  H01J37/3005 ,  H01J2237/2817

摘要： There is disclosed an apparatus to scan an electron beam across an optical phase shift mask and automatically inspect the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x-y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.

摘要翻译： 公开了一种通过光学相移掩模扫描电子束并自动检查掩模以确定相移掩模的特征和缺陷分类的装置。 电子束指向掩模的表面以扫描该掩模，并且提供检测器以从掩模的表面测量次级和背散射带电粒子。 掩模安装在x-y平台上，以在掩模被电子束扫描时提供至少一个自由度。 通过分析从相移掩模获得的每个次要和反向散射电子波形中的各种波形特征，可以检测掩模的各种物理特征以及它们的尺寸和位置。 也可以确定铬层的厚度。 在检查配置中，还存在用于比较衬底上的图案与用于错误检测的第二图案的比较技术。

公开(公告)号：US06881956B1

公开(公告)日：2005-04-19

申请号：US10649599

申请日：2003-08-26

申请人： Jack Y. Jau ,  Zhongwei Chen

发明人： Jack Y. Jau ,  Zhongwei Chen

IPC分类号： G01N23/225 ,  G01N23/04

CPC分类号： H01J37/265 ,  G01N23/2251 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus and method for scanning the surface of a specimen is disclosed for defect inspection purposes. Scanning Electron Microscope (SEM) is used to scan the surface of a specimen. The scanning method employed by the SEM comprises the steps of: generating a particle beam from a particle beam emitter, and scanning the surface of the specimen by bending the particle beam at an angle with respect to the surface of the specimen, wherein the particle beam traverses an angle that is not parallel or perpendicular to the orientation of the specimen. The specimen being scanned is a semiconductor wafer or a photomask.

摘要翻译： 为了缺陷检查目的公开了用于扫描试样表面的装置和方法。 扫描电子显微镜（SEM）用于扫描样品表面。 SEM采用的扫描方法包括以下步骤：从粒子束发射器产生粒子束，并通过相对于样品的表面以一定角度弯曲粒子束来扫描样品的表面，其中粒子束 穿过不平行或垂直于样品取向的角度。 被扫描的样品是半导体晶片或光掩模。