公开(公告)号：US06326220B1

公开(公告)日：2001-12-04

申请号：US09710449

申请日：2000-11-11

申请人： Wei-Wen Chen ,  Yaw-Lin Hwang ,  Yun-Chi Yang

发明人： Wei-Wen Chen ,  Yaw-Lin Hwang ,  Yun-Chi Yang

IPC分类号： H01L2166

CPC分类号： H01L22/14

摘要： A method for determining near-surface doping concentration is provided by utilizing surface photovoltage. A monochromatic light pulse is applied to a semiconductor substrate. When the energy of the incident light is larger than the energy gap of the semiconductor substrate, the light is absorbed by the substrate and thereby generates enough charge carriers. The carriers diffuse to the surface of the substrate and result in lowering the surface barrier, and hence, cause a shift of the surface voltage. The difference of the surface voltages, before and after the light pulse applied, is measured by using a surface photovoltage probe. Then, the doping concentration near the surface of the substrate can be determined according to the difference of the surface voltage.

摘要翻译： 通过利用表面光电压来提供确定近表面掺杂浓度的方法。 将单色光脉冲施加到半导体衬底。 当入射光的能量大于半导体衬底的能隙时，光被衬底吸收，从而产生足够的电荷载流子。 载流子扩散到基板的表面，导致表面势垒降低，因此引起表面电压的偏移。 通过使用表面光电压探测器来测量施加光脉冲之前和之后的表面电压的差异。 然后，可以根据表面电压的差异来确定衬底表面附近的掺杂浓度。

公开(公告)号：US06916730B2

公开(公告)日：2005-07-12

申请号：US10368469

申请日：2003-02-20

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： H01L21/223 ,  H01L21/225 ,  H01L21/28 ,  H01L29/51 ,  H01L21/3205

CPC分类号： H01L21/28202 ,  H01L21/2236 ,  H01L21/225 ,  H01L21/2251 ,  H01L29/513 ,  H01L29/518

摘要： First of all, a semiconductor substrate is provided. Then a gate oxide layer having an uniform thickness is formed on the semiconductor substrate by way of using thermal oxidation. Subsequently, a doping layer is formed on the gate oxide layer by a plasma doped process. Next, forming a poly-layer on the doping layer of the gate oxide layer, wherein the poly-layer has an ions-distribution. Afterward, defining the poly-layer to form a poly-gate. The P-type ions are then implanted into the poly-gate and the substrate by way of using a self-aligned process. Finally, performing a thermal annealing process to form a uniform ion-implanting region and a poly-gate having a lower contact-resistance.

摘要翻译： 首先，提供半导体衬底。 然后通过使用热氧化在半导体衬底上形成具有均匀厚度的栅氧化层。 随后，通过等离子体掺杂工艺在栅极氧化物层上形成掺杂层。 接下来，在栅极氧化物层的掺杂层上形成多层，其中多层具有离子分布。 之后，定义多层以形成多门。 然后通过使用自对准工艺将P型离子注入到多晶硅和衬底中。 最后，进行热退火处理以形成均匀的离子注入区域和具有较低接触电阻的多栅极。

公开(公告)号：US06541350B2

公开(公告)日：2003-04-01

申请号：US09768613

申请日：2001-01-25

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： H01L2176

CPC分类号： H01L21/76237

摘要： A method for forming shallow trench isolation is disclosed. A pad oxide layer and a mask layer are sequentially formed on a substrate. Afterwards, an opening is formed through the mask layer and the pad oxide layer such that regions of the substrate are exposed. Thereafter, the exposed regions are etched to form trenches inside said substrate. Next, nitrogen ions are implanted into the sidewall of the trenches to form a silicon nitride layer, and then a siliconoxynitride layer is formed inside the sidewall of the trenches. Subsequently, a silicon oxide layer is formed on the siliconoxynitride layer and on the mask layer. The excess portion of the silicon oxide layer over said mask layer is removed to expose the mask layer, and then the mask layer is removed away. Finally, the pad oxide layer is removed by using hydrofluoric acid (HF).

公开(公告)号：US06593182B2

公开(公告)日：2003-07-15

申请号：US09811689

申请日：2001-03-19

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： H01L218242

CPC分类号： H01L21/2822 ,  H01L21/26533 ,  H01L21/28211 ,  H01L21/31662 ,  H01L21/823462

摘要： First of all, a semiconductor substrate is provided, and then a photoresist layer is formed and defined on the semiconductor substrate. The pulsed plasma doping is then performed by the photoresist layer as a mask to form a doping region and an undoping region on the semiconductor substrate. After removing the photoresist layer, performing a thermal oxidation process to form a thick gate oxide layer in the doping region and a thin gate oxide layer in the undoping region. Subsequently, two gates are respectively formed on the thick gate oxide layer and the thin gate oxide layer by means of the conventional process.

摘要翻译： 首先，提供半导体衬底，然后在半导体衬底上形成并限定光致抗蚀剂层。 然后通过光致抗蚀剂层作为掩模进行脉冲等离子体掺杂，以在半导体衬底上形成掺杂区域和不掺杂区域。 在去除光致抗蚀剂层之后，进行热氧化处理以在掺杂区域中形成厚栅极氧化层，在未掺杂区域中形成薄的栅极氧化物层。 随后，通过常规方法在厚栅极氧化物层和薄栅极氧化物层上分别形成两个栅极。

公开(公告)号：US06528434B2

公开(公告)日：2003-03-04

申请号：US09682810

申请日：2001-10-22

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： H01L2131

CPC分类号： H01L21/26506 ,  H01L21/31662 ,  H01L21/823462 ,  H01L21/823481

摘要： The present invention provides a method of forming different thickness” of a gate oxide layer simultaneously, by employing a pulse Nitrogen plasma implantation. The method provides a semiconductor substrate with the surface of the silicon in the semiconductor substrate separated into a first region and a second region at least. Then a thin surface on the surface of the silicon of the first region is implanted using a first predetermined concentration of the Nitrogen ions. The thin surface on the surface of the silicon in the second region is implanted using a second predetermined concentration of the Nitrogen ions. An oxidation process is subsequently performed. The first predetermined thickness and the second predetermined thickness of the silicon oxide layer are formed simultaneously on the surface of the silicon in the first region and in the second region. The Nitrogen ions are implanted in the surface of the silicon by forming the pulse nitrogen plasma in-situ. The first predetermined concentration is not equal to the second predetermined concentration.

公开(公告)号：US06432780B1

公开(公告)日：2002-08-13

申请号：US09795936

申请日：2001-02-28

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： H01L233205

摘要： A method for suppressing boron penetrating the gate dielectric layer by pulsed nitrogen plasma doping. A pulsed nitrogen plasma doping process is utilized to dope nitrogen ions into the surface layer in the channel region of the semiconductor substrate. A thermal oxidation step is then performed to form a gate dielectric layer commixed with oxide and oxynitride over the channel region of the semiconductor substrate to avoid boron penetration effect accruing while a boron doped polysilicon layer is subsequently formed on the gate dielectric layer.

公开(公告)号：US06383901B1

公开(公告)日：2002-05-07

申请号：US09768289

申请日：2001-01-25

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： H01L21425

CPC分类号： H01L29/66575 ,  H01L21/2236 ,  H01L21/28035 ,  H01L21/32155

摘要： This invention relates to a method for forming a shallow junction, more particularly, to the method for forming a ultra-shallow junction by using a arsenic plasma doping fashion. The present invention uses the arsenic plasma doping fashion to dope arsenic ions to the junction of the semiconductor and then passes through a post anneal process. The resistance value of the junction can be controlled. The present invention also uses the depth of doped arsenic ions to control the depth of the junction and to restrain the diffusion of the arsenic ions. Then the region of the junction can be reduced successfully to become a ultra-shallow junction. This ultra-shallow junction is a low resistance value and excellent electricity junction.

摘要翻译： 本发明涉及一种用于形成浅结的方法，更具体地说，涉及通过使用砷等离子体掺杂方式形成超浅结的方法。 本发明使用砷等离子体掺杂方式将砷离子掺杂到半导体的结，然后通过后退火工艺。 可以控制结的电阻值。 本发明还使用掺杂砷离子的深度来控制结的深度并且抑制砷离子的扩散。 然后可以将结的区域成功地缩小成为超浅结。 这个超浅结是低电阻值和优良的电接点。

公开(公告)号：US20130206201A1

公开(公告)日：2013-08-15

申请号：US13370599

申请日：2012-02-10

申请人： Szu-Han Li ,  Tong Hong Fu ,  Wei-Wen Chen

发明人： Szu-Han Li ,  Tong Hong Fu ,  Wei-Wen Chen

IPC分类号： H01L31/05 ,  H01L31/18

CPC分类号： H01L31/02 ,  H01L31/02013 ,  Y02E10/50

摘要： A solar cell assembly provides a solar cell with a reduced size potting ring that retains the conductive contact strips that extend through the solar cell substrate and are coupled to the solar cell circuitry on the front surface of the solar cell substrate. A reduced volume of potting material is required and the solar cells are advantageously packed, shipped and stored in this configuration. Diode connections and power cable connections are made external the potting box once the solar cell assemblies are received at their installation location.

摘要翻译： 太阳能电池组件提供具有减小尺寸的封装环的太阳能电池，其保持延伸穿过太阳能电池基板的导电接触片并且耦合到太阳能电池基板的前表面上的太阳能电池电路。 需要减少灌封材料的体积，并且太阳能电池有利地以这种构造被包装，运输和储存。 一旦太阳能电池组件在其安装位置被接收，二极管连接和电力电缆连接就在灌封箱的外部。

公开(公告)号：US06857792B2

公开(公告)日：2005-02-22

申请号：US10348226

申请日：2003-01-22

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： G02B6/42 ,  G02B6/36

CPC分类号： G02B6/4246 ,  G02B6/4214

摘要： A duplex light transceiver module comprises a body having a light receiving module, a light transmitting module, and an optical fiber adaptor. The light emitting module has a laser diode chip and a metal header bearing the laser diode chip. A metal cap of the duplex transceiver module is combined with a round cylindrical focusing element which is installed ahead a light emitting end of the laser diode chip. One end of the cylindrical focusing element is formed with a ramp. A wavelength-division medium is evaporation-coated upon the ramp of the wavelength-division medium. The wavelength-division medium has different permeability so that light at one side facing the optical fiber adaptor will reflect light totally and light at one side facing the optical transmitting module will pass through the wavelength-division medium to be received by the light receiving module.

摘要翻译： 双工光收发器模块包括具有光接收模块，光发射模块和光纤适配器的主体。 发光模块具有激光二极管芯片和带有激光二极管芯片的金属插头。 双工收发器模块的金属盖与安装在激光二极管芯片的发光端的圆柱形聚焦元件组合。 圆柱形聚焦元件的一端形成有斜面。 波分解介质被蒸发涂覆在波分分割介质的斜坡上。 波分解介质具有不同的磁导率，使得面向光纤适配器的一侧的光将完全反射光，并且在面向光发射模块的一侧的光将通过波分解介质以被光接收模块接收。

公开(公告)号：US06827506B2

公开(公告)日：2004-12-07

申请号：US10348224

申请日：2003-01-22

申请人： Wei-Wen Chen

发明人： Wei-Wen Chen

IPC分类号： G02B636

CPC分类号： G02B27/1073 ,  G02B6/4206 ,  G02B6/4214

摘要： A duplex focusing device is installed a duplex light transceiver module for transmitting light signals. The duplex focusing device comprises a ball lens assembly and a body. The ball lens assembly has a first lens and a second lens both being symmetrical half ball matching to each other. A layer of wavelength-division medium is placed between the first and second lens to ensure that light transmitted from a laser diode will transmit through the ball lens assembly. Thereby, the light transmitting into the ball lens assembly will have a part being reflected by the second lens. The body serves for receiving and fixing the ball lens. The body is formed to cause that both orientations of the first lens and the second lens are adjustable with respect to the body.