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    Gain calibration device and method for differential push-pull tracking error signals
    1.
    发明授权
    Gain calibration device and method for differential push-pull tracking error signals 失效

    公开(公告)号：US07023767B2

    公开(公告)日：2006-04-04

    申请号：US10143756

    申请日：2002-05-14

    申请人： Wen-Yi Wu ,  Jin-Chuan Hsu ,  Bruce Hsu

    发明人： Wen-Yi Wu ,  Jin-Chuan Hsu ,  Bruce Hsu

    IPC分类号： G11B7/095

    CPC分类号： G11B7/0945 ,  G11B7/0903 ,  G11B7/094 ,  G11B7/0941 ,  G11B7/0956

    摘要： A gain calibration device and method for differential push-pull (DPP) tracking error signals in an optical storage system is provided. The gain calibration method processes the synthesized gain (SPPG) of the sub beam in the DPP tracking error signal components with respect to the main beam. The calibration theorem resides in controlling the objective lens of the pick-up head to form a lens-shift or controlling the tilt of the objective lens relative to the optical disc to make the synthesized DPP tracking error signals generate a correspondingly signal variation owing to the optical path deviation. The synthesized gain is calibrated to make the signal variation a minimum value, and the calibrated synthesized gain is the optimum value. In the method and device of the invention, the optimum synthesized gain of the sub beam is precisely computed without the assumptions of equal intensity of the two sub beams and symmetrical positions of the two sub beams with respect to the main beam, and without knowing the ratio of the pitch between the two sub beams to the track pitch.

    Crystal growth device
    2.
    发明授权
    Crystal growth device 有权
    晶体生长装置

    公开(公告)号：US09163326B2

    公开(公告)日：2015-10-20

    申请号：US13479497

    申请日：2012-05-24

    申请人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    发明人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    IPC分类号： C30B11/00 ,  C30B21/02

    CPC分类号： C30B11/003 ,  C30B11/007 ,  C30B21/02 ,  Y10T117/1092

    摘要： A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.

    摘要翻译： 晶体生长装置包括坩埚和加热器设置。 坩埚具有底部和顶部开口。 加热器设置围绕坩埚并且可以相对于坩埚沿着坩埚的顶部 - 底部方向以及在第一和第二位置之间移动。 加热器设置包括温度高于第一温度加热区的第一温度加热区和第二温度加热区。 当坩埚处于第二温度加热区域时，加热器设置处于第一位置，并且当坩埚处于第一温度加热区域时处于第二位置。

    Program sharer
    4.
    发明申请
    Program sharer 审中-公开
    计划分享者

    公开(公告)号：US20070136369A1

    公开(公告)日：2007-06-14

    申请号：US11297876

    申请日：2005-12-08

    申请人： Bruce Hsu

    发明人： Bruce Hsu

    IPC分类号： G06F17/00

    CPC分类号： G06F9/545 ,  G06F2209/542

    摘要： The present invention provides a program sharer software that uses technology including storage systems on servers and data access redirection to enable frequently used software (such as document editing software, program development tools, drawing software, ERP software, CAD/CAM software mail software, and so on,) to be executed on client terminals, when, in fact, the software is installed on centralized management software servers. The data access redirection technology in the Windows OS is separated into file redirection, registry redirection, local facilities usage and font installation.

    摘要翻译： 本发明提供一种程序共享软件，其使用包括服务器上的存储系统和数据访问重定向的技术来实现经常使用的软件（诸如文档编辑软件，程序开发工具，绘图软件，ERP软件，CAD / CAM软件邮件软件和 所以，在客户终端上执行，实际上软件安装在集中管理软件服务器上。 Windows操作系统中的数据访问重定向技术分为文件重定向，注册表重定向，本地设施使用和字体安装。

    Crystal Growth Device
    5.
    发明申请
    Crystal Growth Device 有权
    晶体生长装置

    公开(公告)号：US20130133569A1

    公开(公告)日：2013-05-30

    申请号：US13479497

    申请日：2012-05-24

    申请人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    发明人： Chung-Wen Lan ,  Bruce Hsu ,  Wen-Huai Yu ,  Wen-Chieh Lan ,  Yu-Min Yang ,  Kai-Yuan Pai ,  Wen-Ching Hsu

    IPC分类号： C30B11/00

    CPC分类号： C30B11/003 ,  C30B11/007 ,  C30B21/02 ,  Y10T117/1092

    摘要： A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.

    摘要翻译： 晶体生长装置包括坩埚和加热器设置。 坩埚具有底部和顶部开口。 加热器设置围绕坩埚并且可以相对于坩埚沿着坩埚的顶部 - 底部方向以及在第一和第二位置之间移动。 加热器设置包括温度高于第一温度加热区的第一温度加热区和第二温度加热区。 当坩埚处于第二温度加热区域时，加热器设置处于第一位置，并且当坩埚处于第一温度加热区域时处于第二位置。

    Crystalline Silicon Formation Apparatus
    6.
    发明申请
    Crystalline Silicon Formation Apparatus 有权
    结晶硅形成装置

    公开(公告)号：US20110142730A1

    公开(公告)日：2011-06-16

    申请号：US12637403

    申请日：2009-12-14

    申请人： C.W. Lan ,  Kimsam-Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Szu-Hau Ho

    发明人： C.W. Lan ,  Kimsam-Hsieh ,  Wen-Huai Yu ,  Bruce Hsu ,  Ya-Lu Tsai ,  Wen-Ching Hsu ,  Szu-Hau Ho

    IPC分类号： B01D9/00

    CPC分类号： C30B28/06 ,  C30B29/06

    摘要： In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.

    摘要翻译： 在结晶硅形成装置中，将快速冷却方法施加到坩埚的底部，以控制多晶硅晶粒的生长取向，使得晶粒形成双边界，并且双边界是对称晶界，并且 晶粒被固化并单向向上生长以形成完整的多晶硅，使得难以在多晶硅中形成缺陷或杂质。