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公开(公告)号：US20090293928A1
公开(公告)日：2009-12-03
申请号：US12330114
申请日：2008-12-08
申请人： Wenjie Liang , Allon Hochbaum , Melissa Fardy , Minjuan Zhang , Peidong Yang
发明人： Wenjie Liang , Allon Hochbaum , Melissa Fardy , Minjuan Zhang , Peidong Yang
IPC分类号： H01L35/34
CPC分类号： C01B19/007 , B82Y30/00 , C01G21/00 , C01G21/21 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/62 , C01P2004/64 , C01P2004/80 , C01P2006/32 , C01P2006/40
摘要： A process for altering the thermoelectric properties of an electrically conductive material is provided. The process includes providing an electrically conducting material and a substrate. The electrically conducting material is brought into contact with the substrate. A thermal gradient can be applied to the electrically conducting material and a voltage applied to the substrate. In this manner, the electrical conductivity, the thermoelectric power and/or the thermal conductivity of the electrically conductive material can be altered and the figure of merit increased.
摘要翻译： 提供了改变导电材料的热电性能的方法。 该方法包括提供导电材料和基底。 使导电材料与基板接触。 可以对导电材料施加热梯度并施加施加到基板的电压。 以这种方式，可以改变导电材料的导电性，热电功率和/或热导率，并且提高品质因数。
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公开(公告)号：US08101449B2
公开(公告)日：2012-01-24
申请号：US12330114
申请日：2008-12-08
申请人： Wenjie Liang , Allon Hochbaum , Melissa Fardy , Minjuan Zhang , Peidong Yang
发明人： Wenjie Liang , Allon Hochbaum , Melissa Fardy , Minjuan Zhang , Peidong Yang
IPC分类号： H01L35/34
CPC分类号： C01B19/007 , B82Y30/00 , C01G21/00 , C01G21/21 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/62 , C01P2004/64 , C01P2004/80 , C01P2006/32 , C01P2006/40
摘要： A process for altering the thermoelectric properties of an electrically conductive material is provided. The process includes providing an electrically conducting material and a substrate. The electrically conducting material is brought into contact with the substrate. A thermal gradient can be applied to the electrically conducting material and a voltage applied to the substrate. In this manner, the electrical conductivity, the thermoelectric power and/or the thermal conductivity of the electrically conductive material can be altered and the figure of merit increased.
摘要翻译： 提供了改变导电材料的热电性能的方法。 该方法包括提供导电材料和基底。 使导电材料与基板接触。 可以对导电材料施加热梯度并施加施加到基板的电压。 以这种方式，可以改变导电材料的导电性，热电功率和/或热导率，并且提高品质因数。
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公开(公告)号：US07781317B2
公开(公告)日：2010-08-24
申请号：US11619413
申请日：2007-01-03
申请人： Joshua Goldberger , Melissa Fardy , Oded Rabin , Allon Hochbaum , Minjuan Zhang , Peidong Yang
发明人： Joshua Goldberger , Melissa Fardy , Oded Rabin , Allon Hochbaum , Minjuan Zhang , Peidong Yang
IPC分类号： H01L21/20
CPC分类号： C01B19/007 , B82Y30/00 , C01G21/00 , C01G21/21 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/62 , C01P2004/64 , C01P2004/80 , C01P2006/40 , C30B23/007 , C30B25/00 , C30B29/46 , C30B29/60 , Y02P20/129 , Y10S977/84 , Y10S977/842 , Y10S977/843 , Y10S977/844 , Y10S977/89 , Y10S977/895 , Y10S977/896 , Y10S977/897 , Y10S977/898 , Y10S977/899
摘要： A method for the non-catalytic growth of nanowires is provided. The method includes a reaction chamber with the chamber having an inlet end, an exit end and capable of being heated to an elevated temperature. A carrier gas with a flow rate is allowed to enter the reaction chamber through the inlet end and exit the chamber through the exit end. Upon passing through the chamber the carrier gas comes into contact with a precursor which is heated within the reaction chamber. A collection substrate placed downstream from the precursor allows for the formation and growth of nanowires thereon without the use of a catalyst. A second embodiment of the present invention is comprised of a reaction chamber, a carrier gas, a precursor target, a laser beam and a collection substrate. The carrier gas with a flow rate and a gas pressure is allowed to enter the reaction chamber through an inlet end and exit the reaction chamber through the exit end. The laser beam is focused on the precursor target which affords for the evaporation of the precursor material and subsequent formation and growth of nanowires on the collection substrate.
摘要翻译： 提供了一种非催化生长纳米线的方法。 该方法包括反应室，该室具有入口端，出口端并能够被加热到升高的温度。 允许具有流速的载气通过入口端进入反应室，并通过出口端离开室。 当通过室时，载气与在反应室内被加热的前体接触。 放置在前体下游的收集衬底允许在其上形成和生长纳米线，而不使用催化剂。 本发明的第二实施例由反应室，载气，前体靶，激光束和收集基底组成。 允许具有流速和气体压力的载气通过入口端进入反应室，并通过出口端离开反应室。 激光束聚焦在前体靶上，其提供前体材料的蒸发，随后在收集基底上形成和生长纳米线。
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公开(公告)号：US20080157031A1
公开(公告)日：2008-07-03
申请号：US11619413
申请日：2007-01-03
申请人： Joshua Goldberger , Melissa Fardy , Oded Rabin , Allon Hochbaum , Minjuan Zhang , Peidong Yang
发明人： Joshua Goldberger , Melissa Fardy , Oded Rabin , Allon Hochbaum , Minjuan Zhang , Peidong Yang
CPC分类号： C01B19/007 , B82Y30/00 , C01G21/00 , C01G21/21 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/62 , C01P2004/64 , C01P2004/80 , C01P2006/40 , C30B23/007 , C30B25/00 , C30B29/46 , C30B29/60 , Y02P20/129 , Y10S977/84 , Y10S977/842 , Y10S977/843 , Y10S977/844 , Y10S977/89 , Y10S977/895 , Y10S977/896 , Y10S977/897 , Y10S977/898 , Y10S977/899
摘要： A method for the non-catalytic growth of nanowires is provided. The method includes a reaction chamber with the chamber having an inlet end, an exit end and capable of being heated to an elevated temperature. A carrier gas with a flow rate is allowed to enter the reaction chamber through the inlet end and exit the chamber through the exit end. Upon passing through the chamber the carrier gas comes into contact with a precursor which is heated within the reaction chamber. A collection substrate placed downstream from the precursor allows for the formation and growth of nanowires thereon without the use of a catalyst. A second embodiment of the present invention is comprised of a reaction chamber, a carrier gas, a precursor target, a laser beam and a collection substrate. The carrier gas with a flow rate and a gas pressure is allowed to enter the reaction chamber through an inlet end and exit the reaction chamber through the exit end. The laser beam is focused on the precursor target which affords for the evaporation of the precursor material and subsequent formation and growth of nanowires on the collection substrate.
摘要翻译： 提供了一种非催化生长纳米线的方法。 该方法包括反应室，该室具有入口端，出口端并能够被加热到升高的温度。 允许具有流速的载气通过入口端进入反应室，并通过出口端离开室。 当通过室时，载气与在反应室内被加热的前体接触。 放置在前体下游的收集衬底允许在其上形成和生长纳米线，而不使用催化剂。 本发明的第二实施例由反应室，载气，前体靶，激光束和收集基底组成。 允许具有流速和气体压力的载气通过入口端进入反应室，并通过出口端离开反应室。 激光束聚焦在前体靶上，其提供前体材料的蒸发，随后在收集基底上形成和生长纳米线。
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