公开(公告)号：US20090293928A1

公开(公告)日：2009-12-03

申请号：US12330114

申请日：2008-12-08

申请人： Wenjie Liang ,  Allon Hochbaum ,  Melissa Fardy ,  Minjuan Zhang ,  Peidong Yang

发明人： Wenjie Liang ,  Allon Hochbaum ,  Melissa Fardy ,  Minjuan Zhang ,  Peidong Yang

IPC分类号： H01L35/34

CPC分类号： C01B19/007 ,  B82Y30/00 ,  C01G21/00 ,  C01G21/21 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2006/32 ,  C01P2006/40

摘要： A process for altering the thermoelectric properties of an electrically conductive material is provided. The process includes providing an electrically conducting material and a substrate. The electrically conducting material is brought into contact with the substrate. A thermal gradient can be applied to the electrically conducting material and a voltage applied to the substrate. In this manner, the electrical conductivity, the thermoelectric power and/or the thermal conductivity of the electrically conductive material can be altered and the figure of merit increased.

摘要翻译： 提供了改变导电材料的热电性能的方法。 该方法包括提供导电材料和基底。 使导电材料与基板接触。 可以对导电材料施加热梯度并施加施加到基板的电压。 以这种方式，可以改变导电材料的导电性，热电功率和/或热导率，并且提高品质因数。

公开(公告)号：US08101449B2

公开(公告)日：2012-01-24

申请号：US12330114

申请日：2008-12-08

申请人： Wenjie Liang ,  Allon Hochbaum ,  Melissa Fardy ,  Minjuan Zhang ,  Peidong Yang

发明人： Wenjie Liang ,  Allon Hochbaum ,  Melissa Fardy ,  Minjuan Zhang ,  Peidong Yang

IPC分类号： H01L35/34

CPC分类号： C01B19/007 ,  B82Y30/00 ,  C01G21/00 ,  C01G21/21 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2006/32 ,  C01P2006/40

摘要： A process for altering the thermoelectric properties of an electrically conductive material is provided. The process includes providing an electrically conducting material and a substrate. The electrically conducting material is brought into contact with the substrate. A thermal gradient can be applied to the electrically conducting material and a voltage applied to the substrate. In this manner, the electrical conductivity, the thermoelectric power and/or the thermal conductivity of the electrically conductive material can be altered and the figure of merit increased.

摘要翻译： 提供了改变导电材料的热电性能的方法。 该方法包括提供导电材料和基底。 使导电材料与基板接触。 可以对导电材料施加热梯度并施加施加到基板的电压。 以这种方式，可以改变导电材料的导电性，热电功率和/或热导率，并且提高品质因数。

公开(公告)号：US09741003B2

公开(公告)日：2017-08-22

申请号：US13330476

申请日：2011-12-19

申请人： Sanjay Ramaswamy ,  Jimin Jia ,  Qi Ren ,  Wenjie Liang ,  Michael Forney ,  Michael Butler

发明人： Sanjay Ramaswamy ,  Jimin Jia ,  Qi Ren ,  Wenjie Liang ,  Michael Forney ,  Michael Butler

IPC分类号： G06F15/173 ,  G06Q10/06 ,  G06F11/30 ,  H04L12/26

CPC分类号： G06Q10/0633 ,  G06F11/3051 ,  H04L43/04

摘要： Embodiments of the present disclosure provide a user interface that enables an administrator to monitor the status of one or more long-running processes executing on a system. According to one or more embodiments, information about the long-running processes is received, analyzed and converted into a single format. This information is then stored in a storage device in the single format. In response to a command request periodically received from a user interface, summary information about the one or more long-running processes is provided to, and displayed on, the user interface. Upon receipt of a user selection of at least a portion of the summary information, the user interface issues a second command request that is similar to the first command request, but includes additional parameters, to retrieve additional information about the selected summary information. Once the additional information is received, the additional information is presented on the user interface.

公开(公告)号：US20110315962A1

公开(公告)日：2011-12-29

申请号：US13083817

申请日：2011-04-11

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L29/06 ,  H01L21/66 ,  H01L21/20 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。描述了纳米检测器器件。

公开(公告)号：US20060175601A1

公开(公告)日：2006-08-10

申请号：US11172408

申请日：2005-06-30

申请人： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L31/109

CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

公开(公告)号：US07911009B2

公开(公告)日：2011-03-22

申请号：US12571371

申请日：2009-09-30

申请人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles M. Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L21/14 ,  H01L29/82 ,  H01L29/84

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。 描述了纳米检测器器件。

公开(公告)号：US20090057650A1

公开(公告)日：2009-03-05

申请号：US12072844

申请日：2008-02-27

申请人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L29/66

CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。

公开(公告)号：US20070158766A1

公开(公告)日：2007-07-12

申请号：US11582167

申请日：2006-10-17

申请人： Charles Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

发明人： Charles Lieber ,  Hongkun Park ,  Qingqiao Wei ,  Yi Cui ,  Wenjie Liang

IPC分类号： H01L29/82

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G01N2610/00 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/04 ,  G11C2213/17 ,  G11C2213/81 ,  H01L23/53276 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/207 ,  H01L29/267 ,  H01L51/0048 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/762 ,  Y10S977/957 ,  H01L2924/00

摘要： Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

摘要翻译： 描述了由纳米线构成的电气装置及其制造和使用的方法。 纳米线可以是纳米管和纳米线。 纳米线的表面可以被选择性地官能化。 描述了纳米检测器器件。

公开(公告)号：US20130154916A1

公开(公告)日：2013-06-20

申请号：US13330476

申请日：2011-12-19

申请人： Sanjay Ramaswamy ,  Jimin Jia ,  Qi Ren ,  Wenjie Liang ,  Michael Forney

发明人： Sanjay Ramaswamy ,  Jimin Jia ,  Qi Ren ,  Wenjie Liang ,  Michael Forney

IPC分类号： G09G5/00

CPC分类号： G06Q10/0633 ,  G06F11/3051 ,  H04L43/04

摘要： Embodiments of the present disclosure provide a user interface that enables an administrator to monitor the status of one or more long-running processes executing on a system. According to one or more embodiments, information about the long-running processes is received, analyzed and converted into a single format. This information is then stored in a storage device in the single format. In response to a command request periodically received from a user interface, summary information about the one or more long-running processes is provided to, and displayed on, the user interface. Upon receipt of a user selection of at least a portion of the summary information, the user interface issues a second command request that is similar to the first command request, but includes additional parameters, to retrieve additional information about the selected summary information. Once the additional information is received, the additional information is presented on the user interface.

摘要翻译： 本公开的实施例提供了一种使得管理员能够监视在系统上执行的一个或多个长时间运行的进程的状态的用户界面。 根据一个或多个实施例，关于长时间运行的过程的信息被接收，分析并转换成单个格式。 然后将该信息以单一格式存储在存储设备中。 响应于从用户界面周期性地接收到的命令请求，提供关于一个或多个长时间运行的进程的摘要信息并显示在用户界面上。 当接收到对摘要信息的至少一部分的用户选择时，用户界面发出类似于第一命令请求的第二命令请求，但是包括附加参数，以检索关于所选摘要信息的附加信息。 一旦接收到附加信息，附加信息就显示在用户界面上。

公开(公告)号：US20100155698A1

公开(公告)日：2010-06-24

申请号：US12459177

申请日：2009-06-26

申请人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

发明人： Charles M. Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln J. Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David C. Smith ,  Deli Wang ,  Zhaohui Zhong

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

摘要： The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

摘要翻译： 本发明一般涉及亚微电子电路，更具体地涉及纳米尺度制品，包括可以在各种位置和各种级别选择性地掺杂的纳米线。 在一些情况下，制品可以是单晶。 纳米尺寸线可以例如沿其长度或径向掺杂，或者根据掺杂剂的掺杂剂浓度，掺杂剂的浓度或两者掺杂。 这可以用于在单个项目中提供n型和p型导电性，或者在彼此非常接近的不同项目中提供，例如在横杆阵列中。 描述了这种制品的制造和生长，以及这些制品的布置以制造电子，光电子或自旋电子器件和部件。 例如，可以掺杂半导体材料以形成n型和p型半导体区域，用于制造诸如场效应晶体管，双极晶体管，互补反相器，隧道二极管，发光二极管，传感器等的各种器件。