公开(公告)号：US07390678B2

公开(公告)日：2008-06-24

申请号：US11094820

申请日：2005-03-31

申请人： Wensheng Wang ,  Takashi Ando ,  Yukinobu Hikosaka

发明人： Wensheng Wang ,  Takashi Ando ,  Yukinobu Hikosaka

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L21/32136 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Subsequently, back face of a semiconductor substrate (11) is cleaned and an Ir adhesion film (32) is formed on the top electrode film (31). Substrate temperature is set at 400° C. or above at that time. Thereafter, a TiN film and a TEOS film are formed sequentially as a hard mask. In such a method, carbon remaining on the top electrode film (31) after cleaning the back face is discharged into the chamber while the temperature of the semiconductor substrate (11) is kept at 400° C. or above in order to form the Ir adhesion film (32). Consequently, adhesion is enhanced between a TiN film being formed subsequently and the Ir adhesion film (32) thus preventing the TiN film from being stripped.

摘要翻译： 形成PLZT膜（30）作为电容器电介质膜的材料膜，并且在PLZT膜（30）上形成顶部电极膜（31）。 顶部电极膜（31）包括具有不同组成的两个IrO x膜。 随后，清洁半导体衬底（11）的背面并在顶部电极膜（31）上形成Ir粘附膜（32）。 此时基板温度设定在400℃以上。 此后，依次形成TiN膜和TEOS膜作为硬掩模。 在这种方法中，清洁背面后残留在顶部电极膜（31）上的碳被排出到室内，同时半导体衬底（11）的温度保持在400℃以上，以形成Ir 粘合膜（32）。 因此，随后形成的TiN膜与Ir粘附膜（32）之间的粘附性增强，从而防止TiN膜被剥离。

公开(公告)号：US20050244988A1

公开(公告)日：2005-11-03

申请号：US11094820

申请日：2005-03-31

申请人： Wensheng Wang ,  Takashi Ando ,  Yukinobu Hikosaka

发明人： Wensheng Wang ,  Takashi Ando ,  Yukinobu Hikosaka

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/115 ,  H01L21/00

CPC分类号： H01L28/65 ,  H01L21/32136 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： A PLZT film (30) is formed as the material film of a capacitor dielectric film and a top electrode film (31) is formed on the PLZT film (30). The top electrode film (31) comprises two IrOx films having different composition. Subsequently, back face of a semiconductor substrate (11) is cleaned and an Ir adhesion film (32) is formed on the top electrode film (31). Substrate temperature is set at 400° C. or above at that time. Thereafter, a TiN film and a TEOS film are formed sequentially as a hard mask. In such a method, carbon remaining on the top electrode film (31) after cleaning the back face is discharged into the chamber while the temperature of the semiconductor substrate (11) is kept at 400° C. or above in order to form the Ir adhesion film (32). Consequently, adhesion is enhanced between a TiN film being formed subsequently and the Ir adhesion film (32) thus preventing the TiN film from being stripped.

摘要翻译： 形成PLZT膜（30）作为电容器电介质膜的材料膜，并且在PLZT膜（30）上形成顶部电极膜（31）。 顶部电极膜（31）包括具有不同组成的两个IrO x膜。 随后，清洁半导体衬底（11）的背面并在顶部电极膜（31）上形成Ir粘附膜（32）。 此时基板温度设定在400℃以上。 此后，依次形成TiN膜和TEOS膜作为硬掩模。 在这种方法中，清洁背面后残留在顶部电极膜（31）上的碳被排出到室内，同时半导体衬底（11）的温度保持在400℃以上，以形成Ir 粘合膜（32）。 因此，随后形成的TiN膜与Ir粘附膜（32）之间的粘附性增强，从而防止TiN膜被剥离。

公开(公告)号：US08344434B2

公开(公告)日：2013-01-01

申请号：US13100511

申请日：2011-05-04

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L21/02 ,  H01L27/108 ,  H01L29/94 ,  H01L21/00 ,  H01L21/8242

CPC分类号： H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/65

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过至少包括通过溶胶 - 凝胶法形成膜的步骤的成膜方法在第一导电膜上形成第一强电介质膜; 通过溅射法在第一铁电体膜上形成第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过对第一导电膜，第一和第二铁电体膜和第二导电膜进行构图来形成设置有下电极，电容器电介质膜和上电极的电容器。

公开(公告)号：US08102022B2

公开(公告)日：2012-01-24

申请号：US12630337

申请日：2009-12-03

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/92

CPC分类号： H01L28/75 ,  H01L27/1057 ,  H01L27/11507 ,  H01L28/56

摘要： In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film.

摘要翻译： 在半导体器件制造方法中，在优先沿着预定的晶面取向的第一金属膜上形成非晶或微晶金属氧化物膜。 之后，通过MOCVD法形成铁电体膜。 当形成铁电体膜时，形成在第一金属膜上的金属氧化物膜被还原为第二金属膜，并且在第二金属膜上形成铁电体膜。 当形成铁电体膜时，非晶或微晶金属氧化物膜容易均匀地被还原。 结果，获得其取向良好的第二金属膜，并且在第二金属膜上形成其取向良好的铁电体膜。 在形成铁电体膜之后，在铁电体膜上形成上部电极。

公开(公告)号：US20110203916A1

公开(公告)日：2011-08-25

申请号：US13100588

申请日：2011-05-04

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： C23C14/06 ,  C23C14/34

CPC分类号： C23C14/541 ,  C23C14/088 ,  C23C14/5806 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A magnetron-sputtering film-forming apparatus includes: a vacuum film-forming chamber (11); electrostatic chuck units (12) for adjusting a temperature of the substrate (14); a target (15) for causing high-frequency magnetron sputtering; power supply units (17) for applying a discharge voltage between the substrate (14) and the target (15), and calculating an integral power consumption of an electricity discharged by the target (15); and control units (18) for controlling the electrostatic chuck units (12) and the power supply units (17). In the magnetron-sputtering film-forming apparatus, the temperature of the substrate to be processed (14) that is most suitable for sputtering is calculated based on the integral power consumption of the electricity discharged by the target (15) until that time, and the substrate (14) is adjusted to have a predetermined temperature to be subjected to the sputtering.

摘要翻译： 磁控溅射成膜装置包括：真空成膜室（11）; 用于调节衬底（14）的温度的静电吸盘单元（12）; 用于引起高频磁控溅射的靶（15）; 电源单元（17），用于在所述基板（14）和所述目标（15）之间施加放电电压，并计算由所述目标（15）放电的电力的积分功率消耗; 以及用于控制静电卡盘单元（12）和电源单元（17）的控制单元（18）。 在磁控溅射成膜装置中，基于目标（15）直到那时放电的电力的积分耗电量来计算最适合溅射的待处理基板（14）的温度，以及 将衬底（14）调节为具有预定温度以进行溅射。

公开(公告)号：US07928479B2

公开(公告)日：2011-04-19

申请号：US11957752

申请日：2007-12-17

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/76 ,  H01L21/02

CPC分类号： H01L27/11502 ,  G11C11/221 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： A ferroelectric capacitor is formed over a semiconductor substrate (10), and thereafter, interlayer insulating films (48, 50, 52) covering the ferroelectric capacitor are formed. Next, a contact hole (54) reaching a top electrode (40) is formed in the interlayer insulating films (48, 50, 52). Next, a wiring (58) electrically connected to the top electrode (40) through the contact hole (54) is formed on the interlayer insulating films (48, 50, 52). At the time of forming the top electrode (40), conductive oxide films (40a, 40b) are formed, and then a cap film (40c) composed of a noble metal exhibiting less catalytic action than Pt and having a thickness of 150 nm or less is formed on the conductive oxide films (40a, 40b).

摘要翻译： 在半导体衬底（10）上形成铁电电容器，然后形成覆盖铁电电容器的层间绝缘膜（48,50,52）。 接下来，在层间绝缘膜（48,50,52）中形成到达顶部电极（40）的接触孔（54）。 接下来，在层间绝缘膜（48,50,52）上形成有通过接触孔（54）电连接到顶部电极（40）的布线（58）。 在形成顶部电极（40）时，形成导电氧化物膜（40a，40b），然后形成由贵金属组成的覆盖膜（40c），该贵金属具有比Pt更小的催化作用并且具有150nm的厚度或 在导电氧化物膜（40a，40b）上形成较少。

公开(公告)号：US20100207178A1

公开(公告)日：2010-08-19

申请号：US12031960

申请日：2008-02-15

申请人： Makoto TAKAHASHI ,  Mitsushi Fujiki ,  Kenkichi Suezawa ,  Wensheng Wang ,  Ko Nakamura

发明人： Makoto TAKAHASHI ,  Mitsushi Fujiki ,  Kenkichi Suezawa ,  Wensheng Wang ,  Ko Nakamura

IPC分类号： H01L27/07 ,  H01L21/8242

CPC分类号： H01L27/0733 ,  G11C11/22 ,  H01L27/11507 ,  H01L28/55

摘要： A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.

摘要翻译： 一种制造半导体器件的方法包括：在半导体衬底上形成下电极，使用靶溅射下电极上的强电介质膜，根据累积的使用时间在含氧气氛中对铁电体膜进行热处理 用于制造铁电体膜的目标，并且在铁电体膜上形成上电极。

公开(公告)号：US07772628B2

公开(公告)日：2010-08-10

申请号：US11023576

申请日：2004-12-29

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/41 ,  H01L29/43

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.

摘要翻译： 首先在半导体基板的上方形成下电极膜，然后在下电极膜上形成铁电体膜。 之后，在铁电体膜上形成上部电极膜。 当形成上电极时，首先在铁电体膜上形成含有结晶化的小晶体的IrOx膜，然后形成含有柱状晶体的IrOx膜。

公开(公告)号：US20090309188A1

公开(公告)日：2009-12-17

申请号：US12547126

申请日：2009-08-25

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/92 ,  H01L21/02 ,  C23C14/34

CPC分类号： H01L28/40 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx1 and whose actual composition is expressed as AOx2; a second layer formed on the first layer and formed of an oxide whose stoichiometric composition is expressed as BOy1 and whose actual composition is expressed as BOy2; and a metal layer formed on the second layer. The second layer is higher in ratio of oxidation than the first layer. The composition parameters x1, x2, y1, and y2 satisfy y2/y1>x2/x1, and the second layer includes an interface layer of the stoichiometric composition formed at an interface with the metal layer. The interface layer is higher in ratio of oxidation than the rest of the second layer.

摘要翻译： 半导体器件包括基板和包括下电极，铁电体膜和上电极的铁电电容器。 上电极包括由化学计量组成表示为AOx1的氧化物形成的第一层，其实际组成表示为AOx2; 形成在第一层上并由化学计量组成表示为BOy1并且其实际组成表示为BOy2的氧化物形成的第二层; 以及形成在第二层上的金属层。 第二层的氧化比例高于第一层。 组成参数x1，x2，y1和y2满足y2 / y1> x2 / x1，第二层包括在与金属层的界面处形成的化学计量组成的界面层。 界面层的氧化比例高于第二层的其余部分。

公开(公告)号：US07605007B2

公开(公告)日：2009-10-20

申请号：US12040393

申请日：2008-02-29

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L29/76 ,  H01L29/00

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： An upper electrode film includes a first conductive oxidation layer made of an oxide expressed by a chemical formula M1Ox2, a second conductive oxidation layer made of an oxide expressed by a chemical formula M2Oy2 and a third conductive oxidation layer. Here, the second conductive oxidation layer is formed to have a degree of oxidation higher than the first conductive oxidation layer and the third conductive oxidation layer, and among the composition parameters x1, x2, y1, y2, z1 and z2, there are the following relations, y2/y1>x2/x1, y2/y1>z2/z1, and z2/z1≧x2/x1.

摘要翻译： 上电极膜包括由化学式M1Ox2表示的氧化物形成的第一导电氧化层，由化学式M 2 O y 2表示的氧化物形成的第二导电氧化层和第三导电氧化层。 这里，第二导电氧化层形成为具有高于第一导电氧化层和第三导电氧化层的氧化度，并且在组成参数x1，x2，y1，y2，z1和z2中，存在以下 关系，y2 / y1> x2 / x1，y2 / y1> z2 / z1，z2 / z1> = x2 / x1。