公开(公告)号：US20170170805A1

公开(公告)日：2017-06-15

申请号：US15285223

申请日：2016-10-04

Applicant: Wentao Wang ,  Dana Weinstein

Inventor： Wentao Wang ,  Dana Weinstein

IPC: H03H9/17 ,  H03H3/02 ,  H01G4/06

CPC classification number: H03H9/17 ,  H01G4/06 ,  H03H3/02 ,  H03H9/2405 ,  H03H2003/027 ,  H03H2009/155

Abstract: A deep trench (DT) MEMS resonator includes a periodic array of unit cells, each of which includes a single DT formed in a semiconductor substrate and filled with a material whose acoustic impedance is different than that of the substrate. The filled DT is used as both an electrical capacitor and a mechanical structure at the same time, making it an elegant design that reduces footprint and fabrication complexity. Adding a second DT to each unit cell in a DT MEMS resonator forms a dual-trench DT (DTDT) MEMS resonator. In a DTDT unit cell, the first DT is filled with a conductor to sense, conduct, and/or generate an acoustic wave. The second DT in the DTDT unit cell is filled with an insulator. The width, filling, etc. of the second DT in the DTDT unit cell can be selected to tune the acoustic passband of the DTDT unit cell.

公开(公告)号：US20170012338A1

公开(公告)日：2017-01-12

申请号：US15274056

申请日：2016-09-23

Applicant: Wentao Wang ,  Andreja Erbes ,  Dana Weinstein ,  Ashwin A. Seshia

Inventor： Wentao Wang ,  Andreja Erbes ,  Dana Weinstein ,  Ashwin A. Seshia

IPC: H01P7/06 ,  H01L41/09 ,  H02N2/00 ,  H01P5/02

CPC classification number: H01P7/065 ,  G01N29/022 ,  G01N2291/0423 ,  G01N2291/106 ,  H01L41/09 ,  H01P5/02 ,  H02N2/001

Abstract: Examples of the present invention include unreleased coupled multi-cavity resonators and transmission filters. In some examples, the resonators include resonant cavities coupled by acoustic couplers (ABGCs) and acoustic reflectors (ABRs). These acoustic components enable improved confinement of acoustic modes within the resonator to increase the quality factor (Q) and lower the motional resistance (Rx). A coupled resonator with 5 cavities coupled by 4 ABGCs can achieve a Q of 1095 while a single-cavity resonator of the same device size has a Q of 760. In some examples, the devices can be configured to work as electronic transmission filters in at least two types of filter configurations. In the transmission line filter configuration, the device can include a filter structure in an arrangement (LH)N H (LH)N, defined as a Fabry-Perot Resonator (FPR). In the multi-pole filter configuration, the device can include a filter structure in an arrangement similar to the multi-cavity resonator design.

Abstract translation: 本发明的实例包括未发布的耦合多腔谐振器和透射滤波器。 在一些示例中，谐振器包括通过声耦合器（ABGC）和声反射器（ABR）耦合的谐振腔。 这些声学组件能够改善谐振器内的声学模式的限制，以增加质量因子（Q）并降低运动电阻（Rx）。 具有5个通过4个ABGC耦合的腔的耦合谐振器可以实现1095的Q，而具有相同器件尺寸的单腔谐振器具有760的Q值。在一些示例中，器件可被配置为作为电子传输滤波器 至少两种类型的过滤器配置。 在传输线滤波器配置中，器件可以包括定义为法布里 - 珀罗谐振器（FPR）的布置（LH）N H（LH）N中的滤波器结构。 在多极滤波器构造中，器件可以包括类似于多腔谐振器设计的布置的滤波器结构。

公开(公告)号：US09041492B2

公开(公告)日：2015-05-26

申请号：US13460670

申请日：2012-04-30

Applicant: Wentao Wang ,  Dana Weinstein

Inventor： Wentao Wang ,  Dana Weinstein

IPC: H03H3/02 ,  H03H9/17 ,  H03H3/007 ,  H03H9/24

CPC classification number: H03H9/175 ,  H03H3/0072 ,  H03H9/2405 ,  H03H2009/241

Abstract: A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.

Abstract translation: 微机电（MEM）谐振器包括设置在设置在基板上的第一固体材料的第一层中的谐振腔和相对于谐振腔相对于第一层设置在第一层中的第一多个反射器。 第一多个反射器中的每一个包括第二固体材料的外层和第三固体材料的内层。 第一多个反射器中的每一个的内层在第一方向上与每个反射器的外层相邻，并且与相邻反射器的外层或谐振腔相邻。

公开(公告)号：US09232289B2

公开(公告)日：2016-01-05

申请号：US14605489

申请日：2015-01-26

Applicant: Bichoy Bahr ,  Radhika Marathe ,  Wentao Wang ,  Dana Weinstein

Inventor： Bichoy Bahr ,  Radhika Marathe ,  Wentao Wang ,  Dana Weinstein

IPC: H04R1/00 ,  H04R31/00

CPC classification number: H04R1/00 ,  H03H9/02566 ,  H04R31/00 ,  H04R2201/003

Abstract: Example acoustic bandgap devices provided that can be fabricated in a semiconductor fabrication tool based on design check rules. An example device includes a substrate lying in an x-y plane and defining an x-direction and a y-direction, an acoustic resonant cavity over the substrate, and a phononic crystal disposed over the acoustic resonant cavity by generating the phononic crystal as a plurality of unit cells disposed in a periodic arrangement. Each unit cell include: (a) at least one higher acoustic impedance structure having a longitudinal axis oriented in the y-direction and a thickness in the x-direction greater than or about equal to a minimal feature thickness of the semiconductor fabrication tool, and (b) at least one lower acoustic impedance material bordering at least a portion of the at least one higher acoustic impedance structure and forming at least a portion of a remainder of the respective unit cell.

Abstract translation: 提供可以基于设计检查规则在半导体制造工具中制造的示例性声带隙装置。 示例性器件包括位于xy平面中并且限定x方向和y方向的衬底，衬底上的声谐振腔，以及通过将声子晶体生成多个的声学晶体而设置在声谐振腔上方的声子晶体 单元电池以周期性布置方式布置。 每个单位电池包括：（a）具有沿y方向定向的纵向轴线和x方向上的厚度的至少一个更高的声阻抗结构大于或等于半导体制造工具的最小特征厚度，以及 （b）至少一个与所述至少一个更高声阻抗结构的至少一部分邻接的较低声阻抗材料，并形成相应单位电池的剩余部分的至少一部分。

公开(公告)号：US20130033338A1

公开(公告)日：2013-02-07

申请号：US13460670

申请日：2012-04-30

Applicant: Wentao Wang ,  Dana Weinstein

Inventor： Wentao Wang ,  Dana Weinstein

IPC: H03H9/02 ,  H01L41/22

CPC classification number: H03H9/175 ,  H03H3/0072 ,  H03H9/2405 ,  H03H2009/241

Abstract: A microelectromechanical (MEM) resonator includes a resonant cavity disposed in a first layer of a first solid material disposed on a substrate and a first plurality of reflectors disposed in the first layer in a first direction with respect to the resonant cavity and to each other. Each of the first plurality of reflectors comprises an outer layer of a second solid material and an inner layer of a third solid material. The inner layer of each of the first plurality of reflectors is adjacent in the first direction to the outer layer of each reflector and to either the outer layer of an adjacent reflector or the resonant cavity.

Abstract translation: 微机电（MEM）谐振器包括设置在设置在基板上的第一固体材料的第一层中的谐振腔和相对于谐振腔相对于第一层设置在第一层中的第一多个反射器。 第一多个反射器中的每一个包括第二固体材料的外层和第三固体材料的内层。 第一多个反射器中的每一个的内层在第一方向上与每个反射器的外层相邻，并且与相邻反射器的外层或谐振腔相邻。

公开(公告)号：US20140241206A1

公开(公告)日：2014-08-28

申请号：US14118990

申请日：2012-01-18

Applicant: Wentao Wang ,  Xingyuan Li ,  Chuanhui Wang

Inventor： Wentao Wang ,  Xingyuan Li ,  Chuanhui Wang

IPC: H04W4/18 ,  H04W12/06 ,  H04W88/16

CPC classification number: H04W4/18 ,  H04W12/06 ,  H04W88/16

Abstract: The present document discloses a wireless broadband data card which supports accessing a network in 3G and Wi-Fi modes. The wireless broadband data card is connected to a terminal through a USB interface, including: a USB device controller, a USB device driving module, an IP packet and Ethernet frame conversion module, a 3G access module, a dynamic host configuration protocol (DHCP) server activation module, and a Wi-Fi access module. By adopting the present document, the 3G access function and the Wi-Fi access function are integrated in one data card; on the one hand, the data card is convenient to carry and easy to use, and has a low cost; on the other hand, a uniform NDIS driver is used as a uniform data transmission channel and medium, thereby greatly reducing the software development cost and maintenance cost.

Abstract translation: 本文件公开了一种支持以3G和Wi-Fi模式访问网络的无线宽带数据卡。 无线宽带数据卡通过USB接口连接到终端，包括：USB设备控制器，USB设备驱动模块，IP包和以太网帧转换模块，3G接入模块，动态主机配置协议（DHCP） 服务器激活模块和Wi-Fi访问模块。 通过采用本文档，3G接入功能和Wi-Fi接入功能集成在一个数据卡中; 一方面，数据卡携带方便，易于使用，成本低廉; 另一方面，统一的NDIS驱动器被用作统一的数据传输通道和介质，从而大大降低了软件开发成本和维护成本。