Method of producing masks for fabricating semiconductor structures

    公开(公告)号:US06493865B2

    公开(公告)日:2002-12-10

    申请号:US09829870

    申请日:2001-04-10

    IPC分类号: G06F1750

    CPC分类号: G03F1/70

    摘要: Masks are produced for the fabrication of semiconductor structures based on layout data that has information for defining a mask layout with individual geometric structure elements. Layout data generated previously for a mask layout is checked to see whether geometric design requirements are satisfied. In the event of a violation of design requirements, the corresponding error locations in the mask layout are located. Further layout data are then generated, which contain information for defining correction figures to correct the respective error locations. The further layout data are linked with the layout data, so that the layout data are modified. This permits automated modification of the layout data and their technology-dependent optimization.

    Lithography mask for imaging of convex structures
    2.
    发明授权
    Lithography mask for imaging of convex structures 失效
    用于凸结构成像的平版印刷掩模

    公开(公告)号:US07354683B2

    公开(公告)日:2008-04-08

    申请号:US10928759

    申请日:2004-08-27

    IPC分类号: G03F1/00

    摘要: A lithography mask has an angled structure element (O) formed by a first opaque segment (O1) and by a second opaque segment (O2). The structure element has at least one reflex angle (α). The angled structure element (O) includes at least one convex section (A) facing the reflex angle (α). At least one transparent structure (T) adjacent to the angled structure element (O) is provided at the convex section (A) of the angled structure element (O). The transparent structure (T) is formed in separated fashion at the convex section (A) of the angled structure element (O) and thus comprises two distinguishable transparent segments (T1, T2) formed at least in sections essentially axially symmetrically with respect to the angle bisector (WH) of the reflex angle.

    摘要翻译: 光刻掩模具有由第一不透明部分(O 1)和第二不透明部分(O 2)形成的成角度的结构元件(O)。 结构元件具有至少一个反射角(α)。 倾斜结构元件(O)包括面向反射角(α)的至少一个凸部(A)。 与成角度的结构元件(O)相邻的至少一个透明结构(T)设置在倾斜结构元件(O)的凸部(A)处。 透明结构(T)以分开的方式形成在成角度的结构元件(O)的凸部(A)处,并且因此包括两个可区分的透明段(T 1,T 2),其至少形成在主要轴向对称的部分 到角度平分线(WH)的反射角度。

    Method for optimizing the geometry of structural elements of a circuit design pattern and method for producing a photomask
    3.
    发明申请
    Method for optimizing the geometry of structural elements of a circuit design pattern and method for producing a photomask 审中-公开
    用于优化电路设计图案的结构元件的几何形状的方法和用于制造光掩模的方法

    公开(公告)号:US20060190850A1

    公开(公告)日:2006-08-24

    申请号:US11348549

    申请日:2006-02-07

    IPC分类号: G06F17/50

    CPC分类号: G03F1/36

    摘要: A method for optimizing the geometry of structural elements of a circuit pattern involves providing an overall circuit pattern of the circuit design and a plurality of basic patterns. Subsequently, the circuit pattern of the circuit design is iteratively decomposed into corresponding basic patterns in order to classify those parts of the circuit pattern of the plurality of structural elements wherein there exists a match with the basic pattern. Subsequently, further basic patterns are determined for those parts of the circuit pattern which were not previously classified. After applying a specification for optimizing the geometry of the structural elements, the optimized basic patterns are inserted into the circuit design thus achieving an improvement of the optical imaging properties.

    摘要翻译: 用于优化电路图案的结构元件的几何形状的方法包括提供电路设计和多个基本图案的总体电路图案。 随后,将电路设计的电路图案迭代地分解为对应的基本图案,以便对存在与基本图案相匹配的多个结构元件的电路图案的那些部分进行分类。 随后,对于以前未分类的电路图形的那些部分,确定了另外的基本模式。 在应用用于优化结构元件的几何形状的规范之后,将优化的基本图案插入到电路设计中,从而实现光学成像特性的改进。

    Alternating phase mask
    5.
    发明授权
    Alternating phase mask 有权
    交替相位掩模

    公开(公告)号:US06660437B2

    公开(公告)日:2003-12-09

    申请号:US10158733

    申请日:2002-05-30

    IPC分类号: G03F900

    CPC分类号: G03F1/30

    摘要: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±&Dgr; &agr;, whereby &Dgr; &agr; a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.

    摘要翻译: 描述具有包含两个不透明段的分支结构的交替相位掩模。 两个透明表面片分别设置在片段的两侧或其部件上。 表面段设置有被偏移180°±Δα的相位,由此Δaa不大于25°。 表面段由相位位于相邻表面段的相位之间的至少一个透明表面边界段分开。

    Method of fabricating an integrated circuit
    6.
    发明授权
    Method of fabricating an integrated circuit 失效
    制造集成电路的方法

    公开(公告)号:US07759242B2

    公开(公告)日:2010-07-20

    申请号:US11843052

    申请日:2007-08-22

    IPC分类号: H01L21/20

    摘要: A method of fabricating an integrated circuit, including the steps of forming a first mask layer in the form of a hard mask layer including a plurality of first openings and a second mask layer with at least one second opening which at least partially overlaps with one of the first openings, wherein the at least one second opening is generated lithographically; and at least two neighboring first openings are distanced from each other with a center to center pitch smaller than the resolution limit of the lithography used for generating the second opening.

    摘要翻译: 一种制造集成电路的方法,包括以下步骤:形成包括多个第一开口的硬掩模层形式的第一掩模层和具有至少一个第二开口的第二掩模层,所述至少一个第二开口至少部分地与 所述第一开口,其中所述至少一个第二开口是光刻地产生的; 并且至少两个相邻的第一开口彼此间隔开,中心至中心节距小于用于产生第二开口的光刻的分辨率极限。

    Method for determining the ability to project images of integrated semiconductor circuits onto alternating phase masks
    9.
    发明授权
    Method for determining the ability to project images of integrated semiconductor circuits onto alternating phase masks 失效
    确定将集成半导体电路的图像投影到交替相位掩模上的能力的方法

    公开(公告)号:US06957414B2

    公开(公告)日:2005-10-18

    申请号:US10352735

    申请日:2003-01-27

    IPC分类号: G03F1/00 G06F17/50 G03F9/00

    CPC分类号: G03F1/30

    摘要: A method is used to check the direct convertibility of integrated semiconductor circuits into alternating phase masks. This is done by explicitly localizing the phase conflicts occurring in the corresponding layout while solely using the technological requirements made of the design. The set of phase conflicts determined with the aid of this formalism is complete and minimal and thus proves to be an optimum starting point for methods for handling conflicts of this type.

    摘要翻译: 一种方法用于检查集成半导体电路直接可转换成交替相位掩模。 这通过明确地定位在相应布局中发生的相位冲突,而仅使用由设计的技术要求。 在这种形式主义的帮助下确定的一系列相位冲突是完整和最小的,因此被证明是处理这种冲突的方法的最佳起点。

    Method for checking an integrated electrical circuit
    10.
    发明授权
    Method for checking an integrated electrical circuit 失效
    检查集成电路的方法

    公开(公告)号:US06834377B2

    公开(公告)日:2004-12-21

    申请号:US10368334

    申请日:2003-02-18

    IPC分类号: G06F1750

    CPC分类号: G06F8/44 G06F17/5081

    摘要: A layout of an integrated electrical circuit on a memory unit of a computer system includes one or more instantiations of at least one circuit network description as well as information about the instantiations. A raw data structure represents the logical configuration of the layout and associates each instantiation with one, and only one, polygon data structure. A modified data structure is produced to represent the layout, which associates a circuit network description with one, and only one, polygon data structure, wherein the geometrical differences between the instantiations of this circuit network description are taken into account by variants in the polygon data structure.

    摘要翻译: 在计算机系统的存储器单元上的集成电路的布局包括至少一个电路网络描述的一个或多个实例以及关于该实例的信息。 原始数据结构表示布局的逻辑配置,并将每个实例化与一个且仅一个多边形数据结构相关联。 生成修改的数据结构以表示布局,其将电路网络描述与一个且仅一个多边形数据结构相关联,其中通过多边形数据中的变体来考虑该电路网络描述的实例之间的几何差异 结构体。