公开(公告)号：US12154603B1

公开(公告)日：2024-11-26

申请号：US18361631

申请日：2023-07-28

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang Le ,  Brian R. York ,  Xiaoyong Liu ,  Cherngye Hwang ,  Hassan Osman ,  Hisashi Takano ,  Nam Hai Pham

IPC: G11B5/37 ,  G11B5/127

Abstract: The present disclosure generally relates to a magnetic recording head comprising a spintronic device for magnetic media, such as a magnetic media drive. The spintronic device includes at least one spin Hall layer as well as at least one buffer layer and at least one interlayer. The buffer layer is positioned proximate a main pole of a write head while the interlayer is positioned proximate a trailing shield of the write head. The spin Hall layer is positioned between the buffer layer and the interlayer. The spintronic element may be disposed at the media facing surface (MFS) or recessed from the MFS. The spintronic device is capable of injecting spin current to the main pole, the trailing shield, or both.

公开(公告)号：US11694713B2

公开(公告)日：2023-07-04

申请号：US17100199

申请日：2020-11-20

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang Le ,  Cherngye Hwang ,  Brian R. York ,  Thao A. Nguyen ,  Zheng Gao ,  Kuok San Ho ,  Pham Nam Hai

IPC: G11B5/11 ,  H01F10/32 ,  G11B5/147 ,  H10N50/85 ,  H10N52/80 ,  H10B61/00 ,  H10N52/00 ,  G11B5/00

CPC classification number: G11B5/11 ,  G11B5/147 ,  H01F10/329 ,  H01F10/3254 ,  H01F10/3272 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80 ,  G11B2005/0024

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

公开(公告)号：US11875827B2

公开(公告)日：2024-01-16

申请号：US17705147

申请日：2022-03-25

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang Le ,  Brian R. York ,  Xiaoyong Liu ,  Son T. Le ,  Cherngye Hwang ,  Michael A. Gribelyuk ,  Xiaoyu Xu ,  Kuok San Ho ,  Hisashi Takano ,  Julian Sasaki ,  Huy H. Ho ,  Khang H. D. Nguyen ,  Nam Hai Pham

IPC: G11B5/39 ,  G11B5/00

CPC classification number: G11B5/39 ,  G11B2005/0021 ,  G11B2005/3996

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.

公开(公告)号：US12125512B2

公开(公告)日：2024-10-22

申请号：US17854568

申请日：2022-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Quang Le ,  Cherngye Hwang ,  Brian R. York ,  Randy G. Simmons ,  Xiaoyong Liu ,  Kuok San Ho ,  Hisashi Takano ,  Michael A. Gribelyuk ,  Xiaoyu Xu

IPC: G11C11/16 ,  G01R33/09 ,  G11B5/39 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.

公开(公告)号：US12033675B2

公开(公告)日：2024-07-09

申请号：US17956786

申请日：2022-09-29

Applicant: Western Digital Technologies, Inc.

Inventor： Susumu Okamura ,  Quang Le ,  Brian R. York ,  Cherngye Hwang ,  Randy G. Simmons ,  Kuok San Ho ,  Hisashi Takano

IPC: G11B5/31 ,  G11B5/235 ,  G11B5/37 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80 ,  C22C19/07 ,  G11B5/00 ,  G11B5/39

CPC classification number: G11B5/3146 ,  G11B5/235 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/37 ,  H01F10/329 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80 ,  C22C19/07 ,  G11B2005/0024 ,  G11B5/39

Abstract: Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.

公开(公告)号：US11882361B2

公开(公告)日：2024-01-23

申请号：US17455862

申请日：2021-11-19

Applicant: Western Digital Technologies, Inc.

Inventor： Quang Le ,  Rajeev Nagabhirava ,  Kuok San Ho ,  Zhigang Bai ,  Zhanjie Li ,  Xiaoyong Liu ,  Daniele Mauri

IPC: H04N23/68 ,  G03B13/36 ,  G03B3/10 ,  H04N23/55 ,  H04N23/57

CPC classification number: H04N23/687 ,  G03B3/10 ,  G03B13/36 ,  H04N23/55 ,  H04N23/57 ,  G03B2205/0023 ,  G03B2205/0069

Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.

公开(公告)号：US20220414942A1

公开(公告)日：2022-12-29

申请号：US17362427

申请日：2021-06-29

Applicant: Western Digital Technologies, Inc.

Inventor： Quang Le ,  Rajeev Nagabhirava ,  Kuok San Ho ,  Daniel Bai ,  Xiaoyong Liu

IPC: G06T9/00 ,  G06T7/20 ,  G01S17/89 ,  G06N3/08 ,  G06N3/063 ,  G11C11/155

Abstract: Computing devices, such as mobile computing devices, have access to one or more image sensors that can capture images and video with multiple subjects. Some of these subjects may vary in priority for various tasks. It may be desired to increase or decrease the compression on each subject in order to more efficiently store the image data. Low-power, fast-response machine learning logic can be configured to allow for the generation of a plurality of inference data. Inference data can be associated with the type, motion and/or priority of the subjects as desired. This inference data can be utilized along with other subject data to generate one or more variable compression regions within the image data. The image data can be subsequently processed to compress different areas of the image based on a desired application. The variably compressed image can reduce file sizes and allow for more efficient storage and processing.

公开(公告)号：US11532325B1

公开(公告)日：2022-12-20

申请号：US17551981

申请日：2021-12-15

Applicant: Western Digital Technologies, Inc.

Inventor： Quang Le ,  Xiaoyong Liu ,  Zhigang Bai ,  Kuok San Ho ,  Hisashi Takano

IPC: G11B5/584 ,  G11B5/55 ,  G11B5/008

Abstract: The present disclosure is generally related to a tape drive including a tape head configured to read shingled data tracks on a tape. The tape head comprises a first module head assembly aligned with a second module head assembly. Both the first and second module head assemblies comprises one or more servo heads and a plurality of data heads. Each data head comprises a write head, a first read head aligned with the write head, and a second read head offset from the first read head in both a cross-track direction and a down-track direction. The first read heads and the second read heads are configured to read data from a shingled data track of the tape simultaneously. In some embodiments, the tape head is able to be dynamically tilted in order to tilt the first and second reads heads when reading curved portions of shingled data tracks.

公开(公告)号：US11514932B1

公开(公告)日：2022-11-29

申请号：US17359098

申请日：2021-06-25

Applicant: Western Digital Technologies, Inc.

Inventor： Quang Le ,  Hongquan Jiang ,  Hisashi Takano ,  Cherngye Hwang ,  Xiaoyong Liu

IPC: G11B5/39 ,  G11B5/11 ,  G11B5/31

Abstract: The present disclosure generally relates to magnetic storage devices, such as magnetic tape drives, comprising a read head. The read head comprises a plurality of read sensors disposed between a lower shield having a first width in a stripe height direction and an upper shield. The plurality of read sensors comprise an antiferromagnetic layer and a free layer comprising a first layer and a second layer. A plurality of soft bias side shields disposed adjacent to and outwardly of the plurality of read sensors in a cross-track direction, each of the plurality of soft bias side shields having a second width in the stripe height direction less than the first width. Each of the plurality of soft bias side shields are spaced a first distance from the lower shield and a second distance from the upper shield, the first distance being substantially equal to the second distance.

公开(公告)号：US11495741B2

公开(公告)日：2022-11-08

申请号：US16917334

申请日：2020-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Brian R. York ,  Cherngye Hwang ,  Alan Spool ,  Michael Gribelyuk ,  Quang Le

IPC: H01L43/10 ,  H01L27/22 ,  H03B15/00 ,  H01L43/04 ,  H01L43/06

Abstract: A SOT device includes a bismuth antimony dopant element (BiSbE) alloy layer over a substrate. The BiSbE alloy layer is used as a topological insulator. The BiSbE alloy layer includes bismuth, antimony, AND a dopant element. The dopant element is a non-metallic dopant element, a metallic dopant element, and combinations thereof. Examples of metallic dopant elements include Ni, Co, Fe, CoFe, NiFe, NiCo, NiCu, CoCu, NiAg, CuAg, Cu, Al, Zn, Ag, Ga, In, or combinations thereof. Examples of non-metallic dopant elements include Si, P, Ge, or combinations thereof. The BiSbE alloy layer can include a plurality of BiSb lamellae layers and one or more dopant element lamellae layers. The BiSbE alloy layer has a (012) orientation.