公开(公告)号：US20140264680A1

公开(公告)日：2014-09-18

申请号：US14195891

申请日：2014-03-04

申请人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

发明人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

IPC分类号： H01L27/22 ,  H01L43/02

CPC分类号： H01L27/222 ,  H01L27/228 ,  H01L43/08

摘要： A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.

摘要翻译： 提供非易失性存储器件。 非易失性存储器件包括形成在衬底中的多个杂质区，与至少​​一个杂质区电连接的第一触点，与至少一个杂质区电连接的第二触点，形成在第一信息存储部 与基板电连接并与第一触点电连接的第一高度，以及形成在与第一高度不同的第二高度处的与第二触点电连接的第二信息存储部。

公开(公告)号：US20140256062A1

公开(公告)日：2014-09-11

申请号：US14193877

申请日：2014-02-28

申请人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

发明人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

IPC分类号： H01L27/22

CPC分类号： H01L27/228 ,  H01L43/12

摘要： A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.

摘要翻译： 提供一种制造非易失性存储器件的方法。 该方法包括形成晶体管，其包括在衬底中形成的杂质区，形成覆盖晶体管的第一层间绝缘层，第一层间绝缘层包括与杂质区重叠的突起，以及在突起上形成信息存储单元， 存储单元使用尖点磁控管 - 物理气相沉积（PCM-PVD）暴露突起的侧表面并电连接到杂质区。

公开(公告)号：US09224787B2

公开(公告)日：2015-12-29

申请号：US14193877

申请日：2014-02-28

申请人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

发明人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

IPC分类号： H01L21/00 ,  H01L27/22 ,  H01L43/12

CPC分类号： H01L27/228 ,  H01L43/12

摘要： A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.

摘要翻译： 提供一种制造非易失性存储器件的方法。 该方法包括形成晶体管，其包括在衬底中形成的杂质区，形成覆盖晶体管的第一层间绝缘层，第一层间绝缘层包括与杂质区重叠的突起，以及在突起上形成信息存储单元， 存储单元使用尖点磁控管 - 物理气相沉积（PCM-PVD）暴露突起的侧表面并电连接到杂质区。

公开(公告)号：US09224784B2

公开(公告)日：2015-12-29

申请号：US14195891

申请日：2014-03-04

申请人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

发明人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

IPC分类号： H01L27/22 ,  H01L43/08

CPC分类号： H01L27/222 ,  H01L27/228 ,  H01L43/08

摘要： A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.

摘要翻译： 提供非易失性存储器件。 非易失性存储器件包括形成在衬底中的多个杂质区，与至少​​一个杂质区电连接的第一触点，与至少一个杂质区电连接的第二触点，形成在第一信息存储部 与基板电连接并与第一触点电连接的第一高度，以及形成在与第一高度不同的第二高度处的与第二触点电连接的第二信息存储部。

公开(公告)号：US08772887B2

公开(公告)日：2014-07-08

申请号：US13475520

申请日：2012-05-18

申请人： Woo-Chang Lim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Woo-Jin Kim ,  Young-Hyun Kim ,  Jeong-Heon Park

发明人： Woo-Chang Lim ,  Jang-Eun Lee ,  Se-Chung Oh ,  Woo-Jin Kim ,  Young-Hyun Kim ,  Jeong-Heon Park

IPC分类号： H01L29/82 ,  H01L43/00

CPC分类号： H01L43/08

摘要： A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.

摘要翻译： 提供磁性隧道结元件。 磁性隧道结元件分别具有第一磁性层和第二磁性层，该第一磁性层和第二磁性层分别形成在例如绝缘层的下部和上部上并且各自具有垂直的磁各向异性，磁场调节层形成在第二磁性层上并具有 垂直磁各向异性，以及形成在磁场调整层和第二磁性层之间的沐浴层。 第二磁性层和磁场调节层彼此磁耦合。

公开(公告)号：US08334148B2

公开(公告)日：2012-12-18

申请号：US13184127

申请日：2011-07-15

申请人： Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

发明人： Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  H01L43/12

摘要： An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

摘要翻译： 示例性实施例涉及一种形成图案结构的方法，包括在基底上形成物体层，并在物体层上形成硬掩模。 使用包含含氟气体和氨（NH 3）气体的蚀刻气体与氧气一起在物体层上进行等离子体反应蚀刻工艺以形成图案。 氧气用于在蚀刻过程中抑制硬掩模的去除。

公开(公告)号：US20110189851A1

公开(公告)日：2011-08-04

申请号：US13016228

申请日：2011-01-28

申请人： Jun-Ho JEONG ,  Jang-Eun Lee ,  Se-Chung Oh ,  Suk-Hun Choi ,  Jea-Hyoung Lee ,  Woo-Jin Kim ,  Woo-Chang Lim

发明人： Jun-Ho JEONG ,  Jang-Eun Lee ,  Se-Chung Oh ,  Suk-Hun Choi ,  Jea-Hyoung Lee ,  Woo-Jin Kim ,  Woo-Chang Lim

IPC分类号： H01L21/28

CPC分类号： H01L21/28

摘要： A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.

摘要翻译： 一种制造半导体器件的方法，所述方法包括提供衬底; 在衬底上形成下层; 在下层上形成牺牲层; 通过图案化所述牺牲层在所述牺牲层中形成开口，使得所述开口暴露所述下层的预定区域; 在开口中形成掩模层; 通过部分或完全氧化掩模层形成氧化物掩模; 去除牺牲层; 并使用氧化物掩模作为蚀刻掩模蚀刻下层，以形成下层图案。

公开(公告)号：US20080284711A1

公开(公告)日：2008-11-20

申请号：US12153264

申请日：2008-05-15

申请人： Ji-Hwan Seol ,  Woo-Jin Kim ,  Jung-Eun Park ,  Moo-Yong Hyun

发明人： Ji-Hwan Seol ,  Woo-Jin Kim ,  Jung-Eun Park ,  Moo-Yong Hyun

IPC分类号： G09G3/36

CPC分类号： G09G3/294 ,  G09G3/2059 ,  G09G3/293 ,  G09G2310/0218 ,  G09G2330/021 ,  G09G2360/16

摘要： A method and apparatus for automatically controlling power of address data in a plasma display panel (PDP), and a PDP device including the apparatus are provided. In this method, first, a difference-sum of pixel value differences between adjacent pixels successively arranged along a column of block is calculated. Then, an address power control level corresponding to the calculated difference-sum for each block is determined. Thereafter, gain information for each block on the basis of the address power control level for each block is determined. Next, a gain for each block corresponding to the gain information for each block is output. Then, the input image signal is multiplied by the gain for each block to correct the input image signal to output the corrected image signal. Accordingly, power consumption, noise, and generation of heat are reduced, and also the brightness is improved.

摘要翻译： 提供一种用于自动控制等离子体显示面板（PDP）中的地址数据的功率的方法和装置，以及包括该装置的PDP装置。 在该方法中，首先，计算沿着一列的连续排列的相邻像素之间的像素值差的差分和。 然后，确定与每个块的计算差分和相对应的地址功率控制电平。 此后，确定基于每个块的地址功率控制电平的每个块的增益信息。 接下来，输出与每个块的增益信息相对应的每个块的增益。 然后，输入图像信号乘以每个块的增益以校正输入图像信号以输出校正的图像信号。 因此，能量消耗，噪声和热量的产生减少，亮度提高。

公开(公告)号：US20060103600A1

公开(公告)日：2006-05-18

申请号：US11269587

申请日：2005-11-09

申请人： Seung-Woo Chang ,  Woo-Jin Kim ,  Chee-Young Yoon

发明人： Seung-Woo Chang ,  Woo-Jin Kim ,  Chee-Young Yoon

IPC分类号： G09G3/28

CPC分类号： G09G3/2944 ,  G09G3/2942 ,  G09G2360/16

摘要： A driving method of a plasma display panel in which scan electrode lines and sustain electrode lines are parallel to each other and address electrode lines are spaced from and intersect the scan electrode lines and the sustain electrode lines, includes temporally dividing a unit frame into a plurality of subfields, generating a driving signal having a reset period, an address period, and a sustain period for each subfield, detecting an average signal level for the unit frame, alternately applying a first sustain pulse which reaches a first voltage with a rising slope and a second sustain pulse which reaches a ground voltage with a falling slope to the scan electrode lines and the sustain electrode lines, and controlling a timing of alternately applying in accordance with the average signal level for the unit frame.

公开(公告)号：US20050179457A1

公开(公告)日：2005-08-18

申请号：US11025092

申请日：2004-12-28

申请人： Byung-Jun Min ,  Woo-Jin Kim ,  Jeong-Ho Bang ,  Hyun-Seop Shim ,  Hyun-Geun Iy ,  Jae-Il Lee

发明人： Byung-Jun Min ,  Woo-Jin Kim ,  Jeong-Ho Bang ,  Hyun-Seop Shim ,  Hyun-Geun Iy ,  Jae-Il Lee

IPC分类号： H01L21/66 ,  G01R1/04 ,  G01R31/02 ,  G01R31/28

CPC分类号： G01R31/2877 ,  G01R1/0483 ,  G01R31/286 ,  G01R31/2862 ,  G01R31/2879

摘要： A forced air heat exhaust type of burn-in test apparatus for packages: A first air supply duct provides air to the burn-in chamber and a second air supply duct provides air to supply tubes that direst air into the test sockets that hold the packages. The test sockets have a structure that allows air ventilation of the conductive balls. Accordingly, the apparatus can control the temperature around the packages as well as the temperature in the burn-in chamber, thus preventing conductive ball-melting.

摘要翻译： 用于包装的强制空气热排放型老化测试装置：第一供气管道向老化室提供空气，第二空气供应管道提供空气以将管道直接供应到容纳包装的测试插座中 。 测试插座具有允许导电球通风的结构。 因此，该装置可以控制包装周围的温度以及老化室中的温度，从而防止导电性的球熔融。