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公开(公告)号：US4738934A
公开(公告)日：1988-04-19
申请号：US864198
申请日：1986-05-16
申请人： Wilbur D. Johnston, Jr. , Judith A. Long , Albert T. Macrander , Bertram Schwartz , Shobha Singh
发明人： Wilbur D. Johnston, Jr. , Judith A. Long , Albert T. Macrander , Bertram Schwartz , Shobha Singh
IPC分类号： H01L27/14 , H01L21/205 , H01L21/265 , H01L21/322 , H01L21/324 , H01L21/337 , H01L21/338 , H01L27/15 , H01L29/78 , H01L29/808 , H01L29/812 , H01L31/10 , H01L21/24
CPC分类号： H01L21/26546 , H01L21/3245
摘要： Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.
摘要翻译： 通过MOCVD在导电InP晶片上生长的半绝缘InP的外延层为III-V半导体器件提供了优异的基板。 由于导电InP晶片获得的低缺陷密度和半绝缘InP层的优异的绝缘特性，特别吸引人。 本发明是通过离子注入来掺杂绝缘层的方法。 这种方法对于制造包括MISFET，MESFET和JFET的各种器件是非常有利的。
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2.发明授权Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement 失效采用高电阻率基于化合物III-IV族外延层的半导体器件用于电流限制
公开(公告)号：US4888624A
公开(公告)日：1989-12-19
申请号：US183796
申请日：1988-04-20
IPC分类号： C30B25/02 , H01L21/205 , H01L33/00 , H01L33/24 , H01L33/30 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01L33/24 , C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02543 , H01L21/02581 , H01L21/0262 , H01L33/0025 , H01L33/0062 , H01L33/305 , H01S5/24 , H01S5/2237 , H01S5/2277 , Y10S438/918
摘要： High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
摘要翻译： 高电阻率In-based化合物III-V族外延层用于防止大量电流流过半导体器件的区域，例如CSBH，DCPBH，EMBH或CMBH激光器，LED，光电二极管，HBT或 FET。 还描述了用于制造掺杂有Fe的高电阻率材料的氢化物VPE工艺。 Fe由挥发性卤化Fe化合物提供，并且氢化物的热解延伸被限制以允许将足够的掺杂剂输送到生长区域。
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公开(公告)号：US4716130A
公开(公告)日：1987-12-29
申请号：US831113
申请日：1986-02-20
IPC分类号： C30B25/02 , H01L21/205 , H01L21/84
CPC分类号： C30B25/02 , C30B29/40 , Y10S252/951 , Y10S438/934
摘要： It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1.times.10.sup.9 ohm-cm have been achieved as compared to resistivities on the order of 5.times.10.sup.3 ohm-cm for other types of semi-insulating epitaxial indium phosphide.
摘要翻译： 已经发现，通过使用二茂铁或五羰基铁类化合物，可以通过MOCVD方法制备基于磷化铟的化合物的半绝缘外延层。 与其他类型的半绝缘外延磷化铟的5×10 3欧姆·厘米的电阻率相比，已经实现高达1×10 9欧姆 - 厘米的电阻率。
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4.发明授权Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement 失效采用基于Fe掺杂MOCVD InP的层进行电流限制的半导体器件
公开(公告)号：US4660208A
公开(公告)日：1987-04-21
申请号：US621071
申请日：1984-06-15
CPC分类号： H01L33/24 , H01L33/0025 , H01S5/24 , H01S5/2237 , Y10S438/918
摘要： High resistivity Fe-doped InP-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.
摘要翻译： 使用高电阻率Fe掺杂InP的MOCVD层来限制电流流过各种器件如CSBH和DCPBH激光器的有源区域。
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5.发明授权Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers 失效控制掺杂掺杂高电阻率的方法基于In的化合物III-V族外延层
公开(公告)号：US4999315A
公开(公告)日：1991-03-12
申请号：US450973
申请日：1989-12-15
IPC分类号： C30B25/02 , H01L21/205 , H01L33/00 , H01L33/24 , H01L33/30 , H01S5/223 , H01S5/227 , H01S5/24
CPC分类号： H01L33/24 , C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02543 , H01L21/02581 , H01L21/0262 , H01L33/0025 , H01L33/0062 , H01L33/305 , H01S5/24 , H01S5/2237 , H01S5/2277 , Y10S148/023 , Y10S148/041 , Y10S148/065 , Y10S148/119 , Y10S438/925 , Y10S438/934
摘要： High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a hydride VPE process for making the high resistivity material doped with Fe. The Fe is supplied by a volatile halogenated Fe compound, and the extend of pyrolysis of the hydride is limited to allow transport of sufficient dopant to the growth area.
摘要翻译： 高电阻率In-based化合物III-V族外延层用于防止大量电流流过半导体器件的区域，例如CSBH，DCPBH，EMBH或CMBH激光器，LED，光电二极管，HBT或 FET。 还公开了用于制造掺杂有Fe的高电阻率材料的氢化物VPE工艺。 Fe由挥发性卤化Fe化合物提供，并且氢化物的热解延伸被限制以允许将足够的掺杂剂输送到生长区域。
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