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    Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same
    1.
    发明授权
    Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the same 有权
    低压穿通双向瞬态电压抑制装置及其制造方法

    公开(公告)号：US06602769B2

    公开(公告)日：2003-08-05

    申请号：US10264950

    申请日：2002-10-04

    申请人： Willem G. Einthoven ,  Lawrence LaTerza ,  Gary Horsman ,  Jack Eng ,  Danny Garbis

    发明人： Willem G. Einthoven ,  Lawrence LaTerza ,  Gary Horsman ,  Jack Eng ,  Danny Garbis

    IPC分类号： H02L2122

    CPC分类号： H01L29/66121 ,  H01L29/8618

    摘要： A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adjacent to and disposed between the lower and upper layers having a second opposite conductivity type, such that upper and lower p−n junctions are formed. The middle layer has a net doping concentration that is highest at a midpoint between the junctions. Furthermore, the doping profile along a line normal to the lower, middle and upper layers is such that, within the middle layer the doping profile on one side of a centerplane of the middle layer mirrors the doping profile on an opposite side. In addition, an integral of the net doping concentration of the middle layer taken over the distance between the junctions is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown.

    摘要翻译： 具有对称电流 - 电压特性的双向瞬时电压抑制装置具有第一导电类型的下半导体层，第一导电类型的上半导体层和与下层和上层之间相邻并且设置在下层和上层之间的中间半导体层， 第二相反导电类型，使得形成上部和下部pn结。 中间层具有在接合点之间的中点处最高的净掺杂浓度。 此外，沿着垂直于下层，中层和上层的线的掺杂分布使得在中间层内，中间层的中心平面的一侧上的掺杂分布反映了相对侧上的掺杂分布。 此外，中间层的净掺杂浓度在接合点之间的距离的积分是这样的，当发生故障时，击穿是冲击破坏，而不是雪崩击穿。

    Low-voltage punch-through bi-directional transient-voltage suppression devices
    2.
    发明授权
    Low-voltage punch-through bi-directional transient-voltage suppression devices 有权
    低压穿通双向瞬态电压抑制装置

    公开(公告)号：US06489660B1

    公开(公告)日：2002-12-03

    申请号：US09862664

    申请日：2001-05-22

    申请人： Willem G. Einthoven ,  Lawrence LaTerza ,  Gary Horsman ,  Jack Eng ,  Danny Garbis

    发明人： Willem G. Einthoven ,  Lawrence LaTerza ,  Gary Horsman ,  Jack Eng ,  Danny Garbis

    IPC分类号： H01L2900

    CPC分类号： H01L29/66121 ,  H01L29/8618

    摘要： A bi-directional transient voltage suppression device with symmetric current-voltage characteristics has a lower semiconductor layer of first conductivity type, an upper semiconductor layer of first conductivity type, and a middle semiconductor layer adjacent to and disposed between the lower and upper layers having a second opposite conductivity type, such that upper and lower p-n junctions are formed. The middle layer has a net doping concentration that is highest at a midpoint between the junctions. Furthermore, the doping profile along a line normal to the lower, middle and upper layers is such that, within the middle layer the doping profile on one side of a centerplane of the middle layer mirrors the doping profile on an opposite side. In addition, an integral of the net doping concentration of the middle layer taken over the distance between the junctions is such that breakdown, when it occurs, is punch through breakdown, rather than avalanche breakdown.

    摘要翻译： 具有对称电流 - 电压特性的双向瞬时电压抑制装置具有第一导电类型的下半导体层，第一导电类型的上半导体层和与下层和上层之间相邻并且设置在下层和上层之间的中间半导体层， 第二相反导电类型，使得形成上部和下部pn结。 中间层具有在接合点之间的中点处最高的净掺杂浓度。 此外，沿着垂直于下层，中层和上层的线的掺杂分布使得在中间层内，中间层的中心平面的一侧上的掺杂分布反映了相对侧上的掺杂分布。 此外，中间层的净掺杂浓度在接合点之间的距离的积分是这样的，当发生故障时，击穿是冲击破坏，而不是雪崩击穿。