公开(公告)号：US4999316A

公开(公告)日：1991-03-12

申请号：US325290

申请日：1989-03-17

申请人： William D. Goodhue ,  Robert H. Rediker ,  Donald E. Bossi

发明人： William D. Goodhue ,  Robert H. Rediker ,  Donald E. Bossi

IPC分类号： C30B23/02 ,  C30B25/02 ,  H01L21/203 ,  H01L33/00 ,  H01S5/10 ,  H01S5/18 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/42

CPC分类号： C30B23/02 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02631 ,  H01L33/0062 ,  H01S5/10 ,  H01S5/18 ,  H01S5/2232 ,  H01S5/32 ,  H01S5/34313 ,  H01S5/42 ,  H01S5/106 ,  H01S5/223 ,  H01S5/2272 ,  H01S5/32308 ,  H01S5/3432

摘要： A method and apparatus for forming tapered thickness and material content of III-V material, or alloys thereof, in particular GaAs and AlGaAs, by gradient thermal heating of substrates during epitaxial growth and the optoelectronic structures formed thereby.

摘要翻译： 通过在外延生长期间衬底的梯度热加热和由此形成的光电结构，形成III-V材料或其合金，特别是GaAs和AlGaAs的锥形厚度和材料含量的方法和装置。

公开(公告)号：US5856880A

公开(公告)日：1999-01-05

申请号：US226441

申请日：1994-04-12

申请人： James D. Farina ,  Donald E. Bossi ,  Robert A. Rubino, Jr.

发明人： James D. Farina ,  Donald E. Bossi ,  Robert A. Rubino, Jr.

IPC分类号： G02F1/355 ,  G02F1/13

CPC分类号： G02F1/3558

摘要： A ferroelectric material 44 is selectively poled using laser light 14 capable of being absorbed by the material 44, a shutter 18 for turning the light on and off, a variable attenuator 28, with a beam splitter 31 and an optical detector 31a, to set the laser power level, a lens 32 to provide focused laser light 14d, a mirror 36 driven by a motor 40 (mirror-scanner) to direct the light to the regions to be poled, and an electric field applied by electrodes 68, 70. A computer 24 provides automatic control over selective poling of the material 44 by controlling the shutter 18, variable attenuator 28, mirror 36 position, and the direction of the applied electric field. A temperature sensor 52 provides temperature feedback to ensure proper laser power and dwell time. In the alternative, the material 44 is covered with a mask 604 and scanned with the laser to provide selective pole reversal.

摘要翻译： 使用能够被材料44吸收的激光14，用于使光通过和关闭的快门18，具有分束器31和光学检测器31a的可变衰减器28来选择性地极化铁电材料44， 激光功率级，提供聚焦激光14d的透镜32，由电机40（镜像扫描仪）驱动以将光引导到被极化的区域的反射镜36以及由电极68,70施加的电场。 计算机24通过控制快门18，可变衰减器28，反射镜36的位置以及所施加的电场的方向来提供对材料44的选择性极化的自动控制。 温度传感器52提供温度反馈以确保适当的激光功率和停留时间。 在替代方案中，材料44被掩模604覆盖并用激光扫描以提供选择性极反转。

公开(公告)号：US5347601A

公开(公告)日：1994-09-13

申请号：US37863

申请日：1993-03-29

申请人： Robert W. Ade ,  Donald E. Bossi

发明人： Robert W. Ade ,  Donald E. Bossi

IPC分类号： G02B6/12 ,  H04B10/40 ,  G02B6/10

CPC分类号： H04B10/40 ,  G02B6/12004 ,  G02B2006/12078

摘要： An integrated optical receiver/transmitter (transceiver) 8 has continuous wave (cw) light 16 that enters a Mach-Zehnder optical modulator 10 controlled by a modulator control circuit 12 that provides modulated light 30 along a waveguide 32 to an optical coupler 34 which couples a predetermined portion of the light 30 to a waveguide 44 as light 42 which then exits the transceiver from a port 46. Receive light 90 is accepted at the port 46 and travels along the waveguide 44 to the coupler 34 which couples a predetermined amount of the light 90 to a waveguide 70 as light 92 which is detected by a waveguide-integrated photodetector 72. The photodetector 72 provides a current signal on a line 74 to a receiver circuit 76 which provides a voltage signal indicative of the light 92. Alternatively, the coupler may be passive, thereby not requiring the coupler control circuit, or no coupler at all may be employed and two fibers used for communications with the transceiver 8.

摘要翻译： 集成光接收器/发射器（收发器）8具有进入由调制器控制电路12控制的马赫 - 策德尔光调制器10的连续波（cw）光16，调制器控制电路12沿着波导32将调制光30提供给耦合到光耦合器34 光30的预定部分作为光42，光42然后从端口46离开收发器。接收光90在端口46处被接受并且沿着波导44行进到耦合器34，耦合器34将预定量的 光90作为光92被波导集成光电检测器72检测。光电检测器72将线74上的电流信号提供给接收器电路76，接收器电路76提供指示光92的电压信号。或者， 耦合器可以是无源的，从而不需要耦合器控制电路，或者根本不使用耦合器，并且两个光纤用于与收发器8的通信。

公开(公告)号：US5391869A

公开(公告)日：1995-02-21

申请号：US39807

申请日：1993-03-29

申请人： Robert W. Ade ,  Donald E. Bossi ,  James M. Berak, Sr. ,  Rocco P. Basilica

发明人： Robert W. Ade ,  Donald E. Bossi ,  James M. Berak, Sr. ,  Rocco P. Basilica

IPC分类号： G02B6/42 ,  H01L31/105 ,  H01L31/108 ,  H01J5/16

CPC分类号： G02B6/42 ,  H01L31/105 ,  H01L31/1085

摘要： A single-side growth reflection-based photodetector includes a waveguide structure 8 comprising a "strip-loaded rib" waveguide 10 which accepts light 11 from an input end-face 7 and confines the light to a predetermined spatial optical mode 12. The light 11 propagates along the waveguide 10 and is internally reflected off an edge 18 of a retrograde angled region 20, at one end of the waveguide, to a detector layer 16 where the light 11 is absorbed, thereby creating electron-hole pairs in the detector layer 16. The absorbed light is detected by a metal-semiconductor-metal (MSM) detector comprising an interdigital electrode structure 14 disposed on the outer surface of the detector layer 16 which is disposed above a wide non-waveguide mesa layer 9. For 0.84 micron wavelength light, the detector layer 16 is made of GaAs. Alternatively, for 1.3-1.55 micron light, the detector layer 16 is made of InGaAs.

摘要翻译： 单侧生长反射型光电检测器包括波导结构8，波导结构8包括“带状肋”波导10，波导10从输入端面7接收光11并将光限制到预定的空间光学模式12.光11 沿着波导10传播，并且在波导的一端处的逆向有角度的区域20的边缘18内部反射到检测器层16，在该检测器层16中吸收光11，从而在检测器层16中形成电子 - 空穴对 吸收的光被金属半导体金属（MSM）检测器检测，该金属半导体金属（MSM）检测器包括设置在检测器层16的外表面上的交叉指状电极结构14，该检测器层16设置在宽的非波导台面层9的上方。对于0.84微米波长 光检测器层16由GaAs制成。 或者，对于1.3-1.55微米的光，检测器层16由InGaAs制成。