ELECTRON EMISSION DEVICE
    2.
    发明申请
    ELECTRON EMISSION DEVICE 有权
    电子发射装置

    公开(公告)号:US20140203707A1

    公开(公告)日:2014-07-24

    申请号:US14235380

    申请日:2012-07-26

    IPC分类号: H01J1/02 H01J9/02

    摘要: Provided herein are electron emission devices and device components for optical, electronic and optoelectronic devices, including cantilever-based MEMS and NEMS instrumentation. Devices of certain aspects of the invention integrate a dielectric, pyroelectric, piezoelectric or ferroelectric film on the receiving surface of a substrate having an integrated actuator, such as a temperature controller or mechanical actuator, optionally in the form of a cantilever device having an integrated heater-thermometer. Also provided are methods of making and using electron emission devices for a range of applications including sensing and imaging technology.

    摘要翻译: 本文提供了用于光学,电子和光电子器件的电子发射器件和器件部件,包括基于悬臂的MEMS和NEMS仪器。 本发明的某些方面的装置将介质,热释电,压电或铁电薄膜集成在具有集成致动器(例如温度控制器或机械致动器)的基板的接收表面上,任选地呈悬臂装置的形式,其具有集成的加热器 -温度计。 还提供了制造和使用电子发射装置用于一系列应用的方法,包括感测和成像技术。

    Thin film bismuth iron oxides useful for piezoelectric devices
    3.
    发明授权
    Thin film bismuth iron oxides useful for piezoelectric devices 有权
    用于压电元件的薄膜铋铁氧化物

    公开(公告)号:US09356224B2

    公开(公告)日:2016-05-31

    申请号:US12916209

    申请日:2010-10-29

    摘要: The present invention provides for a composition comprising a thin film of BiFeO3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO3 thin film, and a second electrode in contact with the BiFeO3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

    摘要翻译: 本发明提供一种组合物,其包含厚度范围为20nm至300nm的BiFeO 3薄膜,与BiFeO 3薄膜接触的第一电极和与BiFeO 3薄膜接触的第二电极; 其中所述第一和第二电极是电连通的。 组合物是游离的或基本上不含铅(Pb)。 当向BFO薄膜施加电场时,BFO薄膜具有改变其体积和/或形状的压电特性。

    Thin Film Bismuth Iron Oxides Useful for Piezoelectric Devices
    4.
    发明申请
    Thin Film Bismuth Iron Oxides Useful for Piezoelectric Devices 有权
    用于压电元件的薄膜铋铁氧化物

    公开(公告)号:US20110133601A1

    公开(公告)日:2011-06-09

    申请号:US12916209

    申请日:2010-10-29

    IPC分类号: H01L41/02 H01L41/00 H01L41/24

    摘要: The present invention provides for a composition comprising a thin film of BiFeO3 having a thickness ranging from 20 nm to 300 nm, a first electrode in contact with the BiFeO3 thin film, and a second electrode in contact with the BiFeO3 thin film; wherein the first and second electrodes are in electrical communication. The composition is free or essentially free of lead (Pb). The BFO thin film is has the piezoelectric property of changing its volume and/or shape when an electric field is applied to the BFO thin film.

    摘要翻译: 本发明提供一种组合物,其包含厚度范围为20nm至300nm的BiFeO 3薄膜,与BiFeO 3薄膜接触的第一电极和与BiFeO 3薄膜接触的第二电极; 其中所述第一和第二电极是电连通的。 组合物是游离的或基本上不含铅(Pb)。 当向BFO薄膜施加电场时,BFO薄膜具有改变其体积和/或形状的压电特性。