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    Programmable Semiconductor Device
    1.
    发明申请
    Programmable Semiconductor Device 有权
    可编程半导体器件

    公开(公告)号：US20070242548A1

    公开(公告)日：2007-10-18

    申请号：US10552971

    申请日：2003-04-30

    申请人： William Tonti ,  Wayne Berry ,  John Fifield ,  William Guthrie ,  Richard Kontra

    发明人： William Tonti ,  Wayne Berry ,  John Fifield ,  William Guthrie ,  Richard Kontra

    IPC分类号： G11C17/16 ,  H01L29/10

    CPC分类号： G11C17/16 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A programmable device includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.

    摘要翻译： 可编程器件包括衬底（10）; 绝缘体（13）; 绝缘体上的细长半导体材料（12），具有第一和第二端的细长半导体材料和上表面S; 第一端部（12a）基本上比第二端部（12b）更宽，并且金属材料设置在上表面上; 所述金属材料可响应于流过半导体材料和金属材料的电流I而沿着上表面物理迁移。

    PROGRAMMABLE SEMICONDUCTOR DEVICE
    2.
    发明申请
    PROGRAMMABLE SEMICONDUCTOR DEVICE 审中-公开
    可编程半导体器件

    公开(公告)号：US20070298526A1

    公开(公告)日：2007-12-27

    申请号：US11768208

    申请日：2007-06-26

    申请人： Wayne Berry ,  John Fifield ,  William Guthrie ,  Richard Kontra ,  William Tonti

    发明人： Wayne Berry ,  John Fifield ,  William Guthrie ,  Richard Kontra ,  William Tonti

    IPC分类号： G01R31/26

    CPC分类号： G11C17/16 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A design structure for designing and manufacturing a programmable device. The design structure includes a substrate (10); an insulator (13) on the substrate; an elongated semiconductor material (12) on the insulator, the elongated semiconductor material having first and second ends, and an upper surface S; the first end (12a) is substantially wider than the second end (12b), and a metallic material is disposed on the upper surface; the metallic material being physically migratable along the upper surface responsive to an electrical current I flowable through the semiconductor material and the metallic material.

    摘要翻译： 用于设计和制造可编程器件的设计结构。 设计结构包括基板（10）; 绝缘体（13）; 绝缘体上的细长半导体材料（12），具有第一和第二端的细长半导体材料和上表面S; 第一端部（12a）基本上比第二端部（12b）更宽，并且金属材料设置在上表面上; 所述金属材料可响应于流过半导体材料和金属材料的电流I而沿着上表面物理迁移。

    High impedance antifuse
    4.
    发明申请
    High impedance antifuse 有权

    公开(公告)号：US20060289864A1

    公开(公告)日：2006-12-28

    申请号：US11482688

    申请日：2006-07-07

    申请人： John Fifield ,  Russell Houghton ,  William Tonti

    发明人： John Fifield ,  Russell Houghton ,  William Tonti

    IPC分类号： H01L29/04 ,  H01L29/74 ,  H01L29/76 ,  H01L29/00 ,  H01L23/62

    CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  Y10S438/957 ,  H01L2924/00

    摘要： A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a second insulator disposed between the substrate and said electrode of said second device, said second insulator having a second value of said given characteristic that is different from said first value. The electrodes of the diode and the FET are coupled to one another, and a source of programming energy is coupled to the diode to cause it to permanently decrease in resistivity when programmed. The programmed state of the diode is indicated by a current in the FET, which is read by a sense latch. Thus a small resistance change in the diode translates to a large signal gain/change in the latch. This allows the diode to be programmed at lower voltages.

    ELECTRONICALLY PROGRAMMABLE ANTIFUSE AND CIRCUITS MADE THEREWITH
    6.
    发明申请
    ELECTRONICALLY PROGRAMMABLE ANTIFUSE AND CIRCUITS MADE THEREWITH 失效
    电子可编程抗体和电路

    公开(公告)号：US20050073023A1

    公开(公告)日：2005-04-07

    申请号：US10605523

    申请日：2003-10-06

    申请人： John Fifield ,  Wagdi Abadeer ,  William Tonti

    发明人： John Fifield ,  Wagdi Abadeer ,  William Tonti

    IPC分类号： H01L23/525 ,  H01L21/82 ,  H01L29/00

    CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).

    摘要翻译： 一种反熔丝装置（120），其包括彼此串联布置的偏置元件（124）和可编程反熔丝元件（128），以形成具有位于偏置和反熔丝元件之间的输出节点（F）的分压器。 当反熔丝装置处于其未编程状态时，偏置元件和反熔丝元件中的每一个都是不导电的。 当反熔丝装置处于其编程状态时，偏置元件保持不导电，但是反熔丝元件是导电的。 反熔丝元件在其未编程状态和编程状态之间的电阻差异导致当在反熔断器件上施加1V的电压时，在输出节点处看到的电压差为几百微升。 该电压差非常高以至于可以使用简单的感测电路（228）容易地感测。

    Electronically Programmable Antifuse and Circuits Made Therewith
    7.
    发明申请
    Electronically Programmable Antifuse and Circuits Made Therewith 有权
    电子可编程防腐和电路

    公开(公告)号：US20070120221A1

    公开(公告)日：2007-05-31

    申请号：US11627723

    申请日：2007-01-26

    申请人： John Fifield ,  Wagdi Abadeer ,  William Tonti

    发明人： John Fifield ,  Wagdi Abadeer ,  William Tonti

    IPC分类号： H01L29/00 ,  H01L21/326

    CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).

    摘要翻译： 一种反熔丝装置（120），其包括彼此串联布置的偏置元件（124）和可编程反熔丝元件（128），以形成具有位于偏置和反熔丝元件之间的输出节点（F）的分压器。 当反熔丝装置处于其未编程状态时，偏置元件和反熔丝元件中的每一个都是不导电的。 当反熔丝装置处于其编程状态时，偏置元件保持不导电，但是反熔丝元件是导电的。 反熔丝元件在其未编程状态和编程状态之间的电阻差异导致当在反熔断器件上施加1V的电压时，在输出节点处看到的电压差为几百微升。 该电压差非常高以至于可以使用简单的感测电路（228）容易地感测。

    Resettable fuse device and method of fabricating the same
    8.
    发明申请
    Resettable fuse device and method of fabricating the same 有权
    可复位保险丝装置及其制造方法

    公开(公告)号：US20060060938A1

    公开(公告)日：2006-03-23

    申请号：US10948773

    申请日：2004-09-23

    申请人： Wagdi Abadeer ,  John Fifield ,  Robert Gauthier ,  William Tonti

    发明人： Wagdi Abadeer ,  John Fifield ,  Robert Gauthier ,  William Tonti

    IPC分类号： H01L29/00 ,  H01L21/44

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A resettable fuse device is fabricated on one surface of a semiconductor substrate (10) and includes: a gate region (20) having first and second ends; a source node (81) formed in proximity to the first end of the gate region; an extension region (52) formed to connect the source node to the first end of the gate region; and a drain node (80) formed in proximity to the second end of the gate region and separated from the gate region by a distance (D) such that upon application of a predetermined bias voltage to the drain node a connection between the drain node and the second end of the gate region is completed by junction depletion. A gate dielectric (30) and a gate electrode (40) are formed over the gate region. Current flows between the source node and the drain node when the predetermined bias is applied to both the drain node and the gate electrode.

    摘要翻译： 在半导体衬底（10）的一个表面上制造可重置熔丝器件，并且包括：具有第一和第二端的栅极区域（20） 源极节点（81），其形成在所述栅极区域的第一端附近; 形成为将源极节点连接到栅极区域的第一端的延伸区域（52） 以及漏极节点（80），其形成在栅极区域的第二端附近，并且与栅极区分离距离（D），使得在向漏极节点施加预定的偏置电压时，漏极节点和 栅极区域的第二端通过结损耗完成。 栅极电介质（30）和栅电极（40）形成在栅极区域上方。 当预定偏压施加到漏极节点和栅电极时，电流在源节点和漏极节点之间流动。

    Electronically programmable antifuse and circuits made therewith
    9.
    发明申请
    Electronically programmable antifuse and circuits made therewith 有权
    电子可编程反熔丝和由其制成的电路

    公开(公告)号：US20050133884A1

    公开(公告)日：2005-06-23

    申请号：US11051703

    申请日：2005-02-04

    申请人： John Fifield ,  Wagdi Abadeer ,  William Tonti

    发明人： John Fifield ,  Wagdi Abadeer ,  William Tonti

    IPC分类号： H01L23/525 ,  H01L29/00

    CPC分类号： H01L23/5252 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An antifuse device (120) that includes a bias element (124) and an programmable antifuse element (128) arranged in series with one another so as to form a voltage divider having an output node (F) located between the bias and antifuse elements. When the antifuse device is in its unprogrammed state, each of the bias element and antifuse element is non-conductive. When the antifuse device is in its programmed state, the bias element remains non-conductive, but the antifuse element is conductive. The difference in the resistance of the antifuse element between its unprogrammed state and programmed state causes the difference in voltages seen at the output node to be on the order of hundreds of mili-volts when a voltage of 1 V is applied across the antifuse device. This voltage difference is so high that it can be readily sensed using a simple sensing circuit (228).

    摘要翻译： 一种反熔丝装置（120），其包括彼此串联布置的偏置元件（124）和可编程反熔丝元件（128），以形成具有位于偏置和反熔丝元件之间的输出节点（F）的分压器。 当反熔丝装置处于其未编程状态时，偏置元件和反熔丝元件中的每一个都是不导电的。 当反熔丝装置处于其编程状态时，偏置元件保持不导电，但是反熔丝元件是导电的。 反熔丝元件在其未编程状态和编程状态之间的电阻差异导致当在反熔断器件上施加1V的电压时，在输出节点处看到的电压差为几百微升。 该电压差非常高以至于可以使用简单的感测电路（228）容易地感测。