公开(公告)号：US20140049892A1

公开(公告)日：2014-02-20

申请号：US13966293

申请日：2013-08-14

申请人： WINTEK CORPORATION

发明人： Hieng-Hsiung Huang ,  Wen-Chun Wang ,  Chin-Chang Liu

IPC分类号： G06F3/044

CPC分类号： G06F3/044 ,  G06F3/0412

摘要： A touch panel includes a first substrate, a second substrate, an adhesive layer, a first patterned sensing electrode layer and a second patterned sensing electrode layer. The first substrate has a first surface and a second surface, the second substrate has a third surface and a fourth surface, and the second surface of the first substrate faces the third surface of the second substrate. The adhesive layer is disposed between the second surface of the first substrate and the third surface of the second substrate for assembling the first substrate and the second substrate. The first patterned sensing electrode layer is disposed on the first surface of the first substrate, and the second patterned sensing electrode layer is disposed on the fourth surface of the second substrate.

摘要翻译： 触摸面板包括第一基板，第二基板，粘合剂层，第一图案化感测电极层和第二图案化感测电极层。 第一基板具有第一表面和第二表面，第二基板具有第三表面和第四表面，并且第一基板的第二表面面向第二基板的第三表面。 粘合剂层设置在第一基板的第二表面和第二基板的第三表面之间，用于组装第一基板和第二基板。 第一图案化感测电极层设置在第一衬底的第一表面上，第二图案化感测电极层设置在第二衬底的第四表面上。

公开(公告)号：US08951921B2

公开(公告)日：2015-02-10

申请号：US13912199

申请日：2013-06-07

申请人： Wintek Corporation

发明人： Hieng-Hsiung Huang ,  Wen-Chun Wang ,  Heng-Yi Chang ,  Chin-Chang Liu

IPC分类号： H01L21/02 ,  H01L29/786 ,  C23C14/02 ,  C23C14/18 ,  C23C16/02 ,  C23C16/24 ,  C30B29/06 ,  H01L29/66

CPC分类号： H01L29/78672 ,  C03C2218/152 ,  C03C2218/153 ,  C03C2218/154 ,  C23C14/024 ,  C23C14/025 ,  C23C14/185 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/24 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

摘要翻译： 形成薄膜多晶硅层的方法包括以下步骤。 首先，提供基板。 然后进行加热处理。 然后通过硅薄膜沉积工艺在衬底的第一表面上直接形成薄膜多晶硅层。 形成薄膜晶体管的方法包括以下步骤。 首先，提供基板。 然后进行加热处理。 然后通过硅薄膜沉积工艺在衬底的第一表面上直接形成薄膜多晶硅层。 在薄膜多晶硅层上进行第一图案化处理以形成半导体图案。 随后，形成栅极绝缘层，栅电极，源电极和漏电极。

公开(公告)号：US09397660B2

公开(公告)日：2016-07-19

申请号：US14285638

申请日：2014-05-23

申请人： WINTEK CORPORATION

发明人： Tzu-Ling Lin ,  Kuo-Hsing Chen ,  Chen-Hao Su ,  Yu-Ting Chen ,  Kuo-Chang Su ,  Chin-Chang Liu

IPC分类号： H03K17/975 ,  H03K3/017 ,  H03K17/96

CPC分类号： H03K17/9622 ,  H03K2017/9602 ,  H03K2017/9613 ,  H03K2217/960755

摘要： A touch panel including a substrate, first electrodes, second electrodes, first wires, second wires and a means for shortening a gap between the second electrodes in a third direction is provided. The first electrodes are arranged sequentially in a first direction. Each first electrode has openings arranged in a second direction intersecting the first direction. The second electrodes are located in the openings. Each first electrode and the second electrodes surrounded by the first electrode constitute a sensing unit. The first wires and the second wires connect the first electrodes and the second electrodes to a driving circuit. The means for shortening the gap between the second electrodes in the third direction renders a ratio of the gap between the second electrodes in the third direction to that in the second direction to be smaller than 1:3.4, where the third direction intersects either the first direction or the second direction.

摘要翻译： 提供一种包括基板，第一电极，第二电极，第一布线，第二布线和用于缩短第三电极之间的间隙的装置的触摸面板。 第一电极沿第一方向依次布置。 每个第一电极具有沿与第一方向相交的第二方向布置的开口。 第二电极位于开口中。 由第一电极包围的每个第一电极和第二电极构成感测单元。 第一线和第二线将第一电极和第二电极连接到驱动电路。 用于缩短第三方向上的第二电极之间的间隙的装置使得第三电极之间的间隙在第三方向上与第二方向之间的间隙的比率小于1：3.4，其中第三方向与第一电极 方向或第二方向。

公开(公告)号：US20150070604A1

公开(公告)日：2015-03-12

申请号：US14480615

申请日：2014-09-08

申请人： WINTEK CORPORATION

发明人： Ming-Wu Chen ,  Kuo-Chang Su ,  Chin-Chang Liu ,  Wen-Chun Wang

IPC分类号： H03K17/96 ,  G06F1/16

CPC分类号： H03K17/9622 ,  G06F3/044 ,  G06F2203/04107 ,  G06F2203/04112 ,  H03K2217/960705 ,  H03K2217/960755 ,  H03K2217/960765 ,  H03K2217/96077

摘要： A touch device includes a cover substrate, a thin substrate, a first adhesive layer, a first touch sensing unit and a first outer unit. The thin substrate is disposed opposite to the cover substrate. The thin substrate has a first surface and a second surface opposite to the first surface. The first surface faces the cover substrate. A thickness of the thin substrate is thicker than or equal to 0.05 millimeter and thinner than or equal to 0.25 millimeter. The first adhesive layer is disposed between the cover substrate and the thin substrate. The first touch sensing unit is disposed on the thin substrate. The first outer unit is electrically connected to the first touch sensing unit.

摘要翻译： 触摸装置包括盖基板，薄基板，第一粘合层，第一触摸感测单元和第一外单元。 薄基板设置成与盖基板相对。 薄衬底具有与第一表面相对的第一表面和第二表面。 第一表面面向盖基板。 薄衬底的厚度大于或等于0.05毫米并且薄于或等于0.25毫米。 第一粘合剂层设置在覆盖基板和薄基板之间。 第一触摸感测单元设置在薄基板上。 第一外部单元电连接到第一触摸感测单元。

公开(公告)号：US20140362043A1

公开(公告)日：2014-12-11

申请号：US14301350

申请日：2014-06-11

申请人： WINTEK CORPORATION

发明人： Kuan-Yu Chu ,  Chun-Chin Chang ,  Chen-Fu Huang ,  Ming-Wu Chen ,  Chin-Pei Hwang ,  Kuo-Chang Su ,  Chin-Chang Liu ,  Siang-Lin Huang ,  Ming-Shan Lai

IPC分类号： G06F3/046

CPC分类号： G06F3/044

摘要： The present invention discloses a touch panel, which includes a substrate, a plurality of first axis electrodes, a plurality of second axis electrodes and an insulation structure. The first axis electrodes are disposed on the substrate along a first direction and each of the first axis electrodes includes a plurality of first sub electrodes and a plurality of connection structures. Each of the connection structures is at least partially disposed between each of the first sub electrodes and the substrate, and is electrically connected to two adjacent first sub electrodes. Each of the connection structures includes a first metal layer and a low reflective layer disposed between the substrate and the first metal layer. The low reflective layer of the present invention is applied to reduce the visibility of the connection structures, as well as to enhance the reliability of the touch panel.

摘要翻译： 本发明公开了一种触摸面板，其包括基板，多个第一轴电极，多个第二轴电极和绝缘结构。 第一轴电极沿着第一方向设置在基板上，并且每个第一轴电极包括多个第一子电极和多个连接结构。 每个连接结构至少部分地设置在每个第一子电极和基板之间，并且电连接到两个相邻的第一子电极。 每个连接结构包括设置在基板和第一金属层之间的第一金属层和低反射层。 应用本发明的低反射层以降低连接结构的可视性，并且提高触摸面板的可靠性。

公开(公告)号：US20140347319A1

公开(公告)日：2014-11-27

申请号：US14283233

申请日：2014-05-21

申请人： WINTEK CORPORATION

发明人： Tzu-Ling Lin ,  Kuo-Hsing Chen ,  Chen-Hao Su ,  Cheng-Yen Yeh ,  Yu-Ting Chen ,  Chin-Chang Liu ,  Kuo-Chang Su

IPC分类号： G06F3/044

CPC分类号： G06F3/044 ,  G06F2203/04106 ,  G06F2203/04111 ,  G06F2203/04112

摘要： A touch panel, having a center region and a peripheral region disposed on at least one side of the center region, includes a first electrode. The first electrode includes a plurality of first sub-electrodes and a plurality of second sub-electrode. The first sub-electrodes are disposed in the center region, and the second sub-electrodes are disposed on the peripheral region. A pattern density of the second sub-electrodes in the peripheral region is higher than a pattern density of the first sub-electrodes in the center region.

摘要翻译： 具有设置在中心区域的至少一侧的中心区域和周边区域的触摸面板包括第一电极。 第一电极包括多个第一子电极和多个第二子电极。 第一子电极设置在中心区域中，第二子电极设置在周边区域上。 外围区域中的第二子电极的图案密度高于中心区域中的第一子电极的图案密度。

公开(公告)号：US20140087527A1

公开(公告)日：2014-03-27

申请号：US14035930

申请日：2013-09-24

申请人： WINTEK CORPORATION

发明人： Hieng-Hsiung Huang ,  Wen-Chun Wang ,  Heng-Yi Chang ,  Chin-Chang Liu

IPC分类号： H01L29/786

CPC分类号： H01L29/78678 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02667 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78669

摘要： A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A thin film silicon layer is then formed on the substrate by a silicon thin film deposition process. A heating treatment is then applied to the substrate so as to convert the thin film silicon layer into a thin film poly silicon layer. A method of forming a thin film transistor includes following steps. A first patterning process is performed on the thin film poly silicon layer on the substrate to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

摘要翻译： 形成薄膜多晶硅层的方法包括以下步骤。 首先，提供基板。 然后通过硅薄膜沉积工艺在衬底上形成薄膜硅层。 然后对基板进行加热处理，以便将薄膜硅层转化为薄膜多晶硅层。 形成薄膜晶体管的方法包括以下步骤。 对基板上的薄膜多晶硅层进行第一图案化处理以形成半导体图案。 随后，形成栅极绝缘层，栅电极，源电极和漏电极。

公开(公告)号：US20130330886A1

公开(公告)日：2013-12-12

申请号：US13912199

申请日：2013-06-07

申请人： Wintek Corporation

发明人： Hieng-Hsiung Huang ,  Wen-Chun Wang ,  Heng-Yi Chang ,  Chin-Chang Liu

IPC分类号： H01L21/02 ,  H01L29/786

CPC分类号： H01L29/78672 ,  C03C2218/152 ,  C03C2218/153 ,  C03C2218/154 ,  C23C14/024 ,  C23C14/025 ,  C23C14/185 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/24 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A method of forming a thin film transistor includes following steps. Firstly, a substrate is provided. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on a first surface of the substrate by a silicon thin film deposition process. A first patterning process is performed on the thin film poly silicon layer to form a semiconductor pattern. Subsequently, a gate insulation layer, a gate electrode, a source electrode and a drain electrode are formed.

摘要翻译： 形成薄膜多晶硅层的方法包括以下步骤。 首先，提供基板。 然后进行加热处理。 然后通过硅薄膜沉积工艺在衬底的第一表面上直接形成薄膜多晶硅层。 形成薄膜晶体管的方法包括以下步骤。 首先，提供基板。 然后进行加热处理。 然后通过硅薄膜沉积工艺在衬底的第一表面上直接形成薄膜多晶硅层。 在薄膜多晶硅层上进行第一图案化处理以形成半导体图案。 随后，形成栅极绝缘层，栅电极，源电极和漏电极。

公开(公告)号：US20130153391A1

公开(公告)日：2013-06-20

申请号：US13714330

申请日：2012-12-13

申请人： Wintek (China) Technology Ltd. ,  Wintek Corporation

发明人： Chin-Chang Liu ,  Kuo-Chang Su ,  Wen-Chun Wang

IPC分类号： H03K17/96

CPC分类号： H03K17/9622 ,  G06F3/044 ,  G06F2203/04111

摘要： A capacitive touch panel includes a substrate, a plurality of first axis electrodes and a plurality of second axis electrodes disposed on the substrate. Each of the first axis electrodes includes a plurality of first sensing electrodes disposed along a first direction and a plurality of first connecting electrodes respectively disposed between two adjacent first sensing electrodes. Each of the second axis electrodes includes a plurality of second sensing electrodes disposed along a second direction and a plurality of second connecting electrodes respectively disposed between two adjacent second sensing electrodes. Each of the first sensing electrodes partially overlaps the second sensing electrodes along a third direction perpendicular to the substrate.

摘要翻译： 电容式触摸面板包括基板，多个第一轴电极和设置在基板上的多个第二轴电极。 每个第一轴电极包括沿着第一方向设置的多个第一感测电极和分别设置在两个相邻的第一感测电极之间的多个第一连接电极。 每个第二轴电极包括沿着第二方向设置的多个第二感测电极和分别设置在两个相邻的第二感测电极之间的多个第二连接电极。 第一感测电极中的每一个沿垂直于衬底的第三方向部分地与第二感测电极重叠。

公开(公告)号：US20130330934A1

公开(公告)日：2013-12-12

申请号：US13912180

申请日：2013-06-06

申请人： WINTEK CORPORATION

发明人： Hieng-Hsiung Huang ,  Wen-Chun Wang ,  Heng-Yi Chang ,  Chin-Chang Liu

IPC分类号： H01L21/02

CPC分类号： H01L21/02107 ,  C23C14/024 ,  C23C14/025 ,  C23C14/185 ,  C23C16/0209 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/24 ,  C30B29/06 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/6675 ,  H01L29/78672

摘要： A method of forming a thin film poly silicon layer includes following steps. Firstly, a substrate is provided. The substrate has a first surface. A heating treatment is then performed. A thin film poly silicon layer is then directly formed on the first surface of the substrate by a silicon thin film deposition process.

摘要翻译： 形成薄膜多晶硅层的方法包括以下步骤。 首先，提供基板。 衬底具有第一表面。 然后进行加热处理。 然后通过硅薄膜沉积工艺在衬底的第一表面上直接形成薄膜多晶硅层。