摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source (11). The illumination system has a light distribution device (25) which receives light from the primary light source and, from this light, produces a two-dimensional intensity distribution which can be set variably in a pupil-shaping surface (31) of the illumination system. The light distribution device has at least one optical modulation device (20) having a two-dimensional array of individual elements (21) that can be controlled individually in order to change the angular distribution of the light incident on the optical modulation device. The device permits the variable setting of extremely different illuminating modes without replacing optical components.
摘要:
The invention relates to an optical device that includes (a) a first optical element with at least one first raster element, where the first raster element has a first axis, (b) a second optical element with at least one second raster element, where the second raster element has a second axis. The first raster element can be changed in its position relative to the second raster element, so that a distance between the first axis and the second axis is variable.
摘要:
There is provided a projection exposure system operable in a scanning mode along a scanning direction. The projection exposure system includes a collector that receives light having a wavelength ≦193 nm and illuminates a region in a plane. The plane is defined by a local coordinate system having a y-direction parallel to the scanning direction and an x-direction perpendicular to the scanning direction. The collector includes (a) a first mirror shell, (b) a second mirror shell within the first mirror shell, and (c) a fastening device for fastening the first and second mirror shells. The mirror shells are substantially rotational symmetric about a common rotational axis. The fastening device has a support spoke that extends in a radial direction of the mirror shells, and the support spoke, when projected into the plane, yields a projection that is non-parallel to the y-direction.
摘要:
A beam reshaping unit for an illumination system (10) of a microlithographic projection exposure apparatus comprises a first beam reshaping element (62) having a first beam reshaping surface (68) and a second beam reshaping element having a second beam reshaping surface (74) which faces the first beam reshaping surface (68). The two beam reshaping surfaces (68; 74) are rotationally symmetrical with respect to an optical axis (22) of the beam reshaping unit. At least the first beam reshaping surface (68, 74) has a concavely or convexly curved region (70, 76).
摘要:
There is provided an illumination system for microlithography with wavelengths ≦193 nm. The illumination system includes a primary light source, a first optical component, a second optical component, an image plane, and an exit pupil. The first optical component transforms the primary light source into a plurality of secondary light sources that are imaged by the second optical component in the exit pupil. The first optical component includes a first optical element having a plurality of first raster elements that are imaged into the image plane, producing a plurality of images being superimposed at least partially on a field in the image plane. The plurality of first raster elements are rectangular. The field is a segment of an annulus, and the second optical component includes a first field mirror with negative optical power for shaping the field to the segment of the annulus and a second field mirror with positive optical power. Each of a plurality of rays intersects the first field mirror with an incidence angle greater than 70° and each of the plurality of rays intersects the second field mirror with an incidence angle of less than 25°.
摘要:
There is provided an illumination system for wavelengths of ≦100 nm, having an object plane and a field plane. The illumination system includes a grating element having a plurality of gratings, and a diaphragm. The diaphragm is arranged after the grating element in a beam path from the object plane to the field plane.
摘要:
An illumination system for a microlithography projection exposure installation is used to illuminate an illumination field with the light from a primary light source (11). The illumination system has a light distribution device (25) which receives light from the primary light source and, from this light, produces a two-dimensional intensity distribution which can be set variably in a pupil-shaping surface (31) of the illumination system. The light distribution device has at least one optical modulation device (20) having a two-dimensional array of individual elements (21) that can be controlled individually in order to change the angular distribution of the light incident on the optical modulation device. The device permits the variable setting of extremely different illuminating modes without replacing optical components.
摘要:
There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength≦193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
摘要:
There is provided a multi-mirror-system for an illumination system, especially for lithography with wavelengths ≦193 nm. The system includes light rays traveling along a light oath from an object plane to an image plane, and an arc-shaped field in the image plane, whereby a radial direction in the middle of the arc-shaped field defines a scanning direction. The first mirror and the second mirror are arranged in the light path in such a position and having such a shape, that the edge sharpness of the arc-shaped field in the image plane is smaller than 5 mm in the scanning direction. Furthermore, the light rays are impinging on the first mirror and the second mirror with incidence angles ≦30° or ≧60° relative to a surface normal of the first and second mirror.