公开(公告)号：US20250142918A1

公开(公告)日：2025-05-01

申请号：US18545517

申请日：2023-12-19

Applicant: Wolfspeed, Inc.

Inventor： Saptha Sriram ,  Kyle Bothe ,  Matt King ,  James Tweedie

IPC: H01L29/40 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48 ,  H01L29/20 ,  H01L29/45 ,  H01L29/66 ,  H01L29/778

Abstract: A transistor includes a group III-Nitride channel layer; a group III-Nitride barrier layer on the group III-Nitride channel layer, the group III-Nitride barrier layer having a higher bandgap than a bandgap of the group III-Nitride channel layer; a low resistance contact layer on the group III-Nitride barrier layer and/or on the group III-Nitride channel layer; a source electrically coupled to the group III-Nitride barrier layer. A drain electrically coupled to the group III-Nitride barrier layer; and a gate on the group III-Nitride barrier layer. Additionally, at least one of the drain and the source are arranged on the low resistance contact layer.

公开(公告)号：US11658234B2

公开(公告)日：2023-05-23

申请号：US17325576

申请日：2021-05-20

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Terry Alcorn ,  Dan Namishia ,  Jia Guo ,  Matt King ,  Saptharishi Sriram ,  Jeremy Fisher ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7786 ,  H01L29/402 ,  H01L29/66462

Abstract: A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.

公开(公告)号：US11749726B2

公开(公告)日：2023-09-05

申请号：US17325666

申请日：2021-05-20

Applicant: Wolfspeed, Inc.

Inventor： Kyle Bothe ,  Jeremy Fisher ,  Matt King ,  Jia Guo ,  Qianli Mu ,  Scott Sheppard

IPC: H01L29/40 ,  H01L29/66 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/404 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786

Abstract: A transistor device includes a semiconductor layer, source and drain contacts on the semiconductor layer, a gate contact on the semiconductor layer between the source and drain contacts, and a field plate over the semiconductor layer between the gate contact and the drain contact. The transistor device includes a first electrical connection between the field plate and the source contact that is outside an active region of the transistor device, and a second electrical connection between the field plate and the source contact.