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12 条记录 (耗时 0.049 秒)

    BROADCASTING SIGNAL TRANSMITTER/RECEIVER AND BROADCASTING SIGNAL TRANSMISSION/RECEPTION METHOD
    2.
    发明申请
    BROADCASTING SIGNAL TRANSMITTER/RECEIVER AND BROADCASTING SIGNAL TRANSMISSION/RECEPTION METHOD 有权
    广播信号发射机/接收机和广播信号传输/接收方法

    公开(公告)号：US20130343468A1

    公开(公告)日：2013-12-26

    申请号：US13884180

    申请日：2011-02-08

    申请人： Woo Suk Ko ,  Sangchul Moon ,  Jeong Hwan Park ,  Ho Taek Hong

    发明人： Woo Suk Ko ,  Sangchul Moon ,  Jeong Hwan Park ,  Ho Taek Hong

    IPC分类号： H04N5/44

    CPC分类号： H04L12/18 ,  H04H20/42 ,  H04H60/73 ,  H04L1/0041 ,  H04L1/0045 ,  H04L5/0023 ,  H04L5/0053 ,  H04L27/2602 ,  H04L27/2626 ,  H04L27/2647 ,  H04N5/4401 ,  H04N21/234327 ,  H04N21/235 ,  H04N21/2365 ,  H04N21/2383 ,  H04N21/4345 ,  H04N21/435 ,  H04N21/4382 ,  H04N21/6131

    摘要： A broadcasting signal reception method according to the present invention comprises the following steps: OFDM-demodulating by receiving a plurality of broadcasting signals, which contain a transmission frame for transmitting a broadcasting service; outputting the transmission frame by decoding a plurality of OFDM-demodulated broadcasting signals with at least one method among MIMO, MISO, and SISO; and selectively decoding a plurality of PLP's, which are included in the transmission frame, using signaling information included in the transmission frame. In particular, PSI/SI such as PAT/PMT can be transmitted through an arbitrary PLP among the plurality of PLP's; and in the transmitter, an arbitrary PLP, which transmits the PAT/PMP, can be decoded first to enable a search of all PLP's that transmit components included in a single broadcasting service, and a plurality of PLP's can be decoded selectively.

    摘要翻译： 根据本发明的广播信号接收方法包括以下步骤：通过接收包含用于发送广播业务的发送帧的多个广播信号进行OFDM解调; 通过利用MIMO，MISO和SISO中的至少一种方法对多个OFDM解调的广播信号进行解码来输出传输帧; 以及使用包括在传输帧中的信令信息来选择性地解码包含在传输帧中的多个PLP。 特别地，诸如PAT / PMT的PSI / SI可以通过多个PLP中的任意PLP传输; 并且在发射机中，可以首先对发送PAT / PMP的任意PLP进行解码，以便能够搜索发送包括在单个广播业务中的组件的所有PLP，并且可以选择性地解码多个PLP。

    System and method for synchronizing an encrypted file with a remote storage
    3.
    发明授权
    System and method for synchronizing an encrypted file with a remote storage 有权
    将加密文件与远程存储同步的系统和方法

    公开(公告)号：US09208341B2

    公开(公告)日：2015-12-08

    申请号：US14048476

    申请日：2013-10-08

    申请人： Seon Geun Kang ,  Jeong Hwan Park

    发明人： Seon Geun Kang ,  Jeong Hwan Park

    IPC分类号： G06F21/62 ,  H04L29/06

    CPC分类号： G06F21/6218 ,  H04L63/0428

    摘要： A method and system for synchronizing an encrypted file with a remote storage is disclosed. According to one embodiment, a computer-implemented method comprises providing a user with a user application and an encryption key in a portable memory device. The user runs the user application to securely access to a storage on a cloud storage system. A file is encrypted with the encryption key stored in the portable memory device and synchronized with the cloud storage system.

    摘要翻译： 公开了一种用于将加密文件与远程存储器同步的方法和系统。 根据一个实施例，计算机实现的方法包括向便携式存储设备中的用户提供用户应用和加密密钥。 用户运行用户应用程序以安全地访问云存储系统上的存储。 使用存储在便携式存储设备中的加密密钥对文件进行加密，并与云存储系统同步。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06974747B2

    公开(公告)日：2005-12-13

    申请号：US10740089

    申请日：2003-12-18

    申请人： Jeong Hwan Park

    发明人： Jeong Hwan Park

    IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/31 ,  H01L21/336 ,  H01L21/76 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/49 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L21/02667 ,  H01L21/2022 ,  H01L21/28273 ,  H01L27/11521

    摘要： The present invention relates to a method of manufacturing a semiconductor device. After an undoped amorphous silicon layer is formed, it is crystallized by means of a spike rapid thermal process so that the grain growth of a small size is facilitated. Therefore, while the grain size is formed uniformly and small, a grain cross-section of the small size, as a columnar structure, induces crystals grown in a direction perpendicular to the interface. It is therefore possible to reduce the surface roughness and accomplish an electrically uniform characteristic over the entire area.

    摘要翻译： 本发明涉及半导体器件的制造方法。 在形成未掺杂的非晶硅层之后，其通过尖峰快速热处理结晶，从而促进了小尺寸的晶粒生长。 因此，当晶粒尺寸均匀且小时，作为柱状结构，小尺寸的晶粒横截面诱导在与界面垂直的方向上生长的晶体。 因此，可以减小表面粗糙度，并在整个区域上实现电均匀的特性。

    System and Method For Synchronizing An Encrypted File With A Remote Storage
    6.
    发明申请
    System and Method For Synchronizing An Encrypted File With A Remote Storage 审中-公开
    将加密文件与远程存储同步的系统和方法

    公开(公告)号：US20150052353A1

    公开(公告)日：2015-02-19

    申请号：US14048476

    申请日：2013-10-08

    申请人： Seon Geun Kang ,  Jeong Hwan Park

    发明人： Seon Geun Kang ,  Jeong Hwan Park

    IPC分类号： G06F21/62

    CPC分类号： G06F21/6218 ,  H04L63/0428

    摘要： A method and system for synchronizing an encrypted file with a remote storage is disclosed. According to one embodiment, a computer-implemented method comprises providing a user with a user application and an encryption key in a portable memory device. The user runs the user application to securely access to a storage on a cloud storage system. A file is encrypted with the encryption key stored in the portable memory device and synchronized with the cloud storage system.

    摘要翻译： 公开了一种用于将加密文件与远程存储器同步的方法和系统。 根据一个实施例，计算机实现的方法包括向便携式存储设备中的用户提供用户应用和加密密钥。 用户运行用户应用程序以安全地访问云存储系统上的存储。 使用存储在便携式存储设备中的加密密钥对文件进行加密，并与云存储系统同步。

    Method of fabricating flash memory device
    7.
    发明授权
    Method of fabricating flash memory device 失效
    制造闪存设备的方法

    公开(公告)号：US07384844B2

    公开(公告)日：2008-06-10

    申请号：US11297147

    申请日：2005-12-07

    申请人： Jeong Hwan Park ,  Tae Gyun Kim ,  Dong Kee Lee

    发明人： Jeong Hwan Park ,  Tae Gyun Kim ,  Dong Kee Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11546

    摘要： A method of fabricating a flash memory device includes defining a high voltage region and a low voltage region on a substrate. The high voltage region provides an area for one or more first transistors configured to operation at a first voltage, the low voltage region providing an area for one or more second transistors configured to operation at a second voltage that is lower than the first voltage, each first transistor having a gate and a source/drain region on each side of the gate. A first impurity region is formed as part of the source/drain region, the first impurity region having a first depth from an upper surface of the substrate, the first impurity region being of first conductivity having a first impurity concentration. A second impurity is formed as part of the source/drain region, the second impurity region having a second depth from the upper surface of the substrate that is less than first depth, the second impurity region being of the first conductivity and having a second impurity concentration that is greater than the first impurity concentration. Impurities of second conductivity are implanted into the source/drain region.

    摘要翻译： 制造闪速存储器件的方法包括在衬底上限定高电压区域和低电压区域。 所述高电压区域为配置成在第一电压下操作的一个或多个第一晶体管提供一个区域，所述低电压区域提供一个或多个第二晶体管的区域，所述第二晶体管被配置为在低于所述第一电压的第二电压下工作， 第一晶体管在栅极的每一侧具有栅极和源极/漏极区域。 第一杂质区域形成为源极/漏极区域的一部分，第一杂质区域具有从衬底的上表面的第一深度，第一杂质区域具有第一杂质浓度的第一导电性。 第二杂质形成为源极/漏极区的一部分，第二杂质区具有比衬底的上表面小于第一深度的第二深度，第二杂质区具有第一导电性且具有第二杂质 浓度大于第一杂质浓度。 将第二导电性杂质注入源/漏区。

    Method for manufacturing crystalline layered sodium disilicate
    8.
    发明授权
    Method for manufacturing crystalline layered sodium disilicate 失效
    制备结晶层状二硅酸钠的方法

    公开(公告)号：US06740300B1

    公开(公告)日：2004-05-25

    申请号：US09762435

    申请日：2001-04-10

    申请人： Jung Min Lee ,  Jeong Kwon Suh ,  Soon Yong Jeong ,  Chun Hee Park ,  Jeong Hwan Park ,  Jong Ah Kim

    发明人： Jung Min Lee ,  Jeong Kwon Suh ,  Soon Yong Jeong ,  Chun Hee Park ,  Jeong Hwan Park ,  Jong Ah Kim

    IPC分类号： C01B3332

    CPC分类号： C01B33/32

    摘要： The present invention relates to an improved method for manufacturing a crystalline layered sodium disilicate and more particularly, to the improved method for manufacturing the crystalline layered sodium disilicate comprising the steps including the preparation of granules in a certain ratio of anhydrous sodium silicate cullet, a starting material, in the presence of some binders such as water and an aqueous solution of sodium silicate, followed by a crystallization step of the granules, thus ensuring that a small amount of final product is recycled to the prior crystallization step in order to prevent the attachment of granules to an inner crystallization device, which occurs due to local sintering in a high-temperature crystallization condition of continual process and also to further enhance the unit productivity during the mass production of crystalline layered sodium disilicate.

    摘要翻译： 本发明涉及一种用于制造结晶层状二硅酸钠的改进方法，更具体地说，涉及制备结晶层状二硅酸钠的改进方法，包括以下步骤：以一定比例制备无水硅酸钠碎玻璃的颗粒，起始 在一些粘合剂如水和硅酸钠水溶液的存在下，然后进行颗粒的结晶步骤，从而确保少量的最终产物被循环到现有的结晶步骤以防止附着 颗粒到内部结晶装置，其由于在连续工艺的高温结晶条件下的局部烧结而发生，并且还在大量生产结晶层状二硅酸钠期间进一步提高单元生产率。

    Method of forming high voltage junction in semiconductor device
    9.
    发明授权
    Method of forming high voltage junction in semiconductor device 失效
    在半导体器件中形成高压结的方法

    公开(公告)号：US06878596B2

    公开(公告)日：2005-04-12

    申请号：US10310884

    申请日：2002-12-06

    申请人： Jeong Hwan Park ,  Noh Yeal Kwak

    发明人： Jeong Hwan Park ,  Noh Yeal Kwak

    IPC分类号： H01L29/76 ,  H01L21/265 ,  H01L21/336 ,  H01L29/78

    CPC分类号： H01L29/66575 ,  H01L21/26513 ,  H01L29/7833

    摘要： The present invention relates to a method of forming a high voltage junction in a semiconductor device. The method includes forming a double diffused drain junction, and making amorphous the double diffused drain junction to a first depth by implanting an impurity having a high atomic weight than an impurity injected into the double diffused drain junction, implanting an impurity so that the concentration of the concentration of an impurity to a second depth lower than the first depth and then activating the impurities. Thus, the present invention can reduce the sheet resistance by prohibiting diffusion of an impurity, prohibit a channeling phenomenon by lowering the depth of the junction, and remove crystal defects by sufficiently activating an impurity and since a subsequent annealing process for activation can be performed at a high temperature, and thus improve reliability of a process and an electrical characteristic of the device.

    摘要翻译： 本发明涉及在半导体器件中形成高压结的方法。 该方法包括形成双扩散漏极结，并且通过注入具有比注入到双扩散漏极结中的杂质更高的原子量的杂质将双扩散漏极结非晶化到第一深度，注入杂质，使得 杂质的浓度低于第一深度的第二深度，然后激活杂质。 因此，本发明可以通过禁止杂质的扩散来抑制薄层电阻，通过降低结的深度来抑制沟道现象，并通过充分活化杂质来除去晶体缺陷，并且由于后续的激活退火工艺可以在 高温度，从而提高了工艺的可靠性和设备的电气特性。

    System and method for providing secure access to a remote file
    10.
    发明授权
    System and method for providing secure access to a remote file 有权
    用于提供对远程文件的安全访问的系统和方法

    公开(公告)号：US08938790B2

    公开(公告)日：2015-01-20

    申请号：US13677189

    申请日：2012-11-14

    申请人： Seon Geun Kang ,  Jeong Hwan Park

    发明人： Seon Geun Kang ,  Jeong Hwan Park

    IPC分类号： G06F21/00 ,  H04L29/06 ,  G06F21/34 ,  G06F21/62

    CPC分类号： G06F21/34 ,  G06F21/00 ,  G06F21/53 ,  G06F21/6218 ,  G06F21/78

    摘要： A method and system for providing secure access to a remote file is disclosed. According to one embodiment, a portable memory device containing a secure desktop is provided to a user. The user has a user device that removably accepts the portable memory device. The user is allowed to securely access a dedicated storage of the cloud storage system that is created at a request from an administrator. The secure desktop runs independently from a user desktop of the user device. The user's access to a local storage of the user device is blocked while the secure desktop is running.

    摘要翻译： 公开了一种用于提供对远程文件的安全访问的方法和系统。 根据一个实施例，向用户提供包含安全桌面的便携式存储设备。 用户具有可移除地接受便携式存储设备的用户设备。 允许用户安全地访问根据管理员的请求创建的云存储系统的专用存储。 安全桌面独立于用户设备的用户桌面运行。 当安全桌面运行时，用户对用户设备的本地存储的访问被阻止。