公开(公告)号：US20170069832A1

公开(公告)日：2017-03-09

申请号：US15186420

申请日：2016-06-17

Applicant: Yong-Jae KIM ,  Woo-Jin KIM ,  Ki-Seok SUH ,  Shin-Hee HAN ,  Gwan-Hyeob KOH

Inventor： Yong-Jae KIM ,  Woo-Jin KIM ,  Ki-Seok SUH ,  Shin-Hee HAN ,  Gwan-Hyeob KOH

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/12

Abstract: A magnetoresistive memory device includes a lower electrode on a substrate, a magnetic tunnel junction (MTJ) structure on the lower electrode, and a mask structure. The MTJ structure includes a lower magnetic pattern, a tunnel barrier pattern, and an upper magnetic pattern which are stacked. The mask structure includes an upper electrode and a sidewall capping pattern enclosing a sidewall of the upper electrode.

Abstract translation: 磁阻存储器件包括衬底上的下电极，下电极上的磁隧道结（MTJ）结构和掩模结构。 MTJ结构包括堆叠的较低磁性图案，隧道势垒图案和上部磁性图案。 掩模结构包括上电极和封闭上电极的侧壁的侧壁封盖图案。

公开(公告)号：US20170110509A1

公开(公告)日：2017-04-20

申请号：US15293771

申请日：2016-10-14

Applicant: Jung-Hoon BAK ,  Woo-Jin KIM ,  Mina LEE ,  Gwan-Hyeob KOH ,  Yoon-Jong SONG

Inventor： Jung-Hoon BAK ,  Woo-Jin KIM ,  Mina LEE ,  Gwan-Hyeob KOH ,  Yoon-Jong SONG

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction (MTJ) structure includes a fixed layer pattern structure having a perpendicular magnetization direction, a tunnel barrier pattern on the fixed layer pattern structure, a free layer pattern on the tunnel barrier pattern, the free layer pattern having a perpendicular magnetization direction, a first surface magnetism induction pattern on the free layer pattern, the first surface magnetism induction pattern inducing a perpendicular magnetism in a surface of the free layer pattern, a conductive pattern on the first surface magnetism induction pattern, and a ferromagnetic pattern on the conductive pattern.

公开(公告)号：US20150287911A1

公开(公告)日：2015-10-08

申请号：US14611717

申请日：2015-02-02

Applicant: Kyoung-Sun KIM ,  Woo-Jin KIM ,  Ken TOKASHIKI

Inventor： Kyoung-Sun KIM ,  Woo-Jin KIM ,  Ken TOKASHIKI

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228

Abstract: In a method of manufacturing a MRAM device, a lower electrode is formed on a substrate. A first magnetic layer, a tunnel barrier layer, and a second magnetic layer are sequentially formed on the lower electrode layer. An etching mask is formed on the second magnetic layer. An ion beam etching process in which a first ion beam and a second ion beam are simultaneously emitted onto the substrate is performed to form a MTJ structure including a first magnetic layer pattern, a tunnel layer pattern, and a second magnetic layer pattern from the first magnetic layer, the tunnel barrier layer, and the second magnetic layer, respectively, the MTJ structure has no by-products remaining after the ion beam etching process is performed.

Abstract translation: 在制造MRAM器件的方法中，在基片上形成下电极。 第一磁性层，隧道势垒层和第二磁性层依次形成在下部电极层上。 在第二磁性层上形成蚀刻掩模。 执行其中第一离子束和第二离子束同时发射到衬底上的离子束蚀刻工艺，以形成包括第一磁性层图案，隧道层图案和第二磁性层图案的MTJ结构 磁性层，隧道势垒层和第二磁性层，在执行离子束蚀刻处理之后，MTJ结构没有剩余副产物。

公开(公告)号：US20140308759A1

公开(公告)日：2014-10-16

申请号：US14217917

申请日：2014-03-18

Applicant: Woo-Jin KIM ,  Ki-Woong KIM ,  Young-Hyun KIM

Inventor： Woo-Jin KIM ,  Ki-Woong KIM ,  Young-Hyun KIM

IPC: H01L43/14

CPC classification number: H01L43/12 ,  G11C11/161

Abstract: A method of forming a semiconductor device includes forming a perpendicular magnetized magnetic device, annealing the perpendicular magnetized magnetic device, and applying a magnetic field to the perpendicular magnetized magnetic device. The semiconductor device may be a magnetoresistance data storage device. The magnetic field is applied in a direction that is substantially perpendicular to a substrate coupled to the perpendicular magnetized magnetic device.

Abstract translation: 形成半导体器件的方法包括形成垂直磁化磁性器件，退火垂直磁化的磁性器件，并向垂直磁化的磁性器件施加磁场。 半导体器件可以是磁阻数据存储器件。 磁场沿基本上垂直于与垂直磁化磁性装置连接的衬底的方向施加。

公开(公告)号：US20120190346A1

公开(公告)日：2012-07-26

申请号：US13247790

申请日：2011-09-28

Applicant: Woo-Jin KIM

Inventor： Woo-Jin KIM

IPC: H04W4/00 ,  H04M1/00

CPC classification number: G06T19/006 ,  A63F2300/1093 ,  A63F2300/203 ,  A63F2300/308 ,  A63F2300/6045 ,  A63F2300/69 ,  G06F16/434 ,  G06F16/951 ,  H04L67/38 ,  H04M2250/10 ,  H04M2250/12 ,  H04M2250/52

Abstract: An apparatus to provide Augmented Reality (AR) integrated information, includes an image acquiring unit to acquire an image of AR code, and a data processing unit to analyze the AR code to produce AR data, extract an element associated with a category from the AR data, generate a search term based on the extraction and display the AR data and/or search data.

Abstract translation: 提供增强现实（AR）综合信息的装置包括获取AR码图像的图像获取单元和分析AR码以产生AR数据的数据处理单元，从AR提取与类别相关联的元素 数据，基于提取生成搜索项并显示AR数据和/或搜索数据。

公开(公告)号：US20180040813A1

公开(公告)日：2018-02-08

申请号：US15449538

申请日：2017-03-03

Applicant: Yoon-Sung HAN ,  Ki-Seok SUH ,  Woo-Jin KIM

Inventor： Yoon-Sung HAN ,  Ki-Seok SUH ,  Woo-Jin KIM

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: An MRAM device may include an insulating interlayer structure, a lower electrode contact structure and a variable resistance structure. The insulating interlayer may be formed on a substrate. The lower electrode contact structure may extend through the insulating interlayer. The lower electrode contact structure may include a first electrode having a pillar shape and a second electrode having a cylindrical shape on the first electrode. An upper surface of the second electrode may have a ring shape. A variable resistance structure may be formed on the second electrode. The variable resistance structure may include a lower electrode, a magnetic tunnel junction (MTJ) structure and an upper electrode sequentially stacked.

公开(公告)号：US20120292724A1

公开(公告)日：2012-11-22

申请号：US13475520

申请日：2012-05-18

Applicant: Woo-Chang LIM ,  Jang-Eun LEE ,  Se-Chung OH ,  Woo-Jin KIM ,  Young-Hyun KIM ,  Jeong-Heon PARK

Inventor： Woo-Chang LIM ,  Jang-Eun LEE ,  Se-Chung OH ,  Woo-Jin KIM ,  Young-Hyun KIM ,  Jeong-Heon PARK

IPC: H01L29/82

CPC classification number: H01L43/08

Abstract: A magnetic tunnel junction element is provided. The magnetic tunnel junction element has first magnetic layer and second magnetic layer formed adjacent, e.g., on lower and upper portions of an insulating layer, respectively and each having a perpendicular magnetic anisotropy, a magnetic field adjustment layer formed on the second magnetic layer and having a perpendicular magnetic anisotropy, and a bather layer formed between the magnetic field adjustment layer and the second magnetic layer. The second magnetic layer and the magnetic field adjustment layer are magnetically decoupled from each other.

Abstract translation: 提供磁性隧道结元件。 磁性隧道结元件分别具有第一磁性层和第二磁性层，该第一磁性层和第二磁性层分别形成在例如绝缘层的下部和上部上并且各自具有垂直的磁各向异性，磁场调节层形成在第二磁性层上并具有 垂直磁各向异性，以及形成在磁场调整层和第二磁性层之间的沐浴层。 第二磁性层和磁场调节层彼此磁耦合。