公开(公告)号：US09069245B2

公开(公告)日：2015-06-30

申请号：US13091287

申请日：2011-04-21

申请人： Masaki Ohashi ,  Seiichiro Tachibana ,  Kazumi Noda ,  Shozo Shirai ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

发明人： Masaki Ohashi ,  Seiichiro Tachibana ,  Kazumi Noda ,  Shozo Shirai ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

IPC分类号： G03F7/09 ,  G03F7/11 ,  G03F7/004 ,  G02B5/20 ,  G02B5/22

CPC分类号： G03F7/0045 ,  G02B5/208 ,  G02B5/22 ,  G03F7/091 ,  G03F7/11

摘要： A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), R1 and R2 are a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R′)(R″), R′ and R″ are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and X− is an anion.

摘要翻译： 包含（A）式（1）的近红外吸收染料，（B）聚合物和（C）溶剂的组合物用于形成近红外吸收层。 式（1）中，R 1和R 2是可以含有杂原子的一价烃基，k为0〜5，m为0或1，n为1或2，Z为氧，硫或C（R'）（ R“），R'和R”是氢或可以含有杂原子的一价烃基，X-是阴离子。

公开(公告)号：US08772376B2

公开(公告)日：2014-07-08

申请号：US12542970

申请日：2009-08-18

申请人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

发明人： Wu-Song Huang ,  Martin Glodde ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Sen Liu ,  Libor Vyklicky

IPC分类号： C09D163/00 ,  C08L63/00 ,  C08K5/00 ,  B32B27/20 ,  B32B27/38 ,  C08G59/32 ,  C08G59/68 ,  G02B5/22

CPC分类号： G03F7/0388 ,  G03F7/038 ,  G03F7/091 ,  G03F7/11 ,  H01L51/447

摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US08586283B2

公开(公告)日：2013-11-19

申请号：US13608409

申请日：2012-09-10

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US08039194B2

公开(公告)日：2011-10-18

申请号：US11970827

申请日：2008-01-08

申请人： Martin Glodde

发明人： Martin Glodde

IPC分类号： G03F7/004 ,  G03F7/30 ,  C07C23/08 ,  C07C23/18 ,  C07C23/34 ,  C07C23/44

CPC分类号： G03F7/0045 ,  C07C25/18 ,  C07C255/46 ,  C07C309/06 ,  C07C381/12 ,  C07C391/02 ,  C07C2601/10 ,  G03F7/0046 ,  G03F7/0397 ,  Y10T428/24612 ,  Y10T428/24802

摘要： A photoacid generator P+ A− comprises (a) an antenna group P+ comprising atoms with high EUV photoabsorption cross-sections according to FIG. 1 and A− anions; or (b) an antenna group P+ and A− comprising anions with low photoabsorption cross-sections for EUV; or (c) an antenna group P+, comprising atoms with high EUV photoabsorption cross-sections according to FIG. 1 and A− comprising anions with low photoabsorption cross-sections for EUV. Novel compounds comprise DTFPIO PFBuS, and DTBPIO CN5.

摘要翻译： 光致酸发生器P + A-包括（a）包含根据图1的具有高EUV光吸收横截面的原子的天线组P + 1和A-阴离子; 或（b）天线组P +和A-包括对EUV具有低光吸收横截面的阴离子; 或（c）天线组P +，包括根据图1的具有高EUV光吸收横截面的原子。 1和A-包括对于EUV具有低光吸收横截面的阴离子。 新型化合物包括DTFPIO PFBuS和DTBPIO CN5。

公开(公告)号：US20090176173A1

公开(公告)日：2009-07-09

申请号：US11970731

申请日：2008-01-08

申请人： Martin Glodde ,  Sen Liu ,  Irene Y. Popova

发明人： Martin Glodde ,  Sen Liu ,  Irene Y. Popova

IPC分类号： C07C255/46 ,  G03F7/00

CPC分类号： G03F7/0045 ,  G03F7/0392

摘要： A photoacid generator compound P+A−, comprises an antenna group P+ comprising a cation that generates protons upon interaction with light, and A− comprising a weakly coordinating peracceptor-substituted aromatic anion that does not contain fluorine or semi-metallic elements such as boron. In one embodiment, such anions comprise the following compounds 4, 5, 6 and 7, wherein E comprises an electron-withdrawing group and the removal of one proton generates aromaticity. P+ comprises an onium cation that decomposes into a proton and other components upon interaction with photons. P+ may comprise an organic chalcogen onium cation or a halonium cation, wherein the chalcogen onium cation in another embodiment may comprises an oxonium, sulfonium, selenium, tellurium, or onium cation, and the halonium cation may comprise an iodonium, chlorine or bromine onium cation. A novel compound comprises TPS CN5. A photolithographic formulation comprises the photoacid generator in combination with a photolithographic composition such as a photolithographic polymer. The formulation, when on a substrate, is exposed to optical lithographic radiation or ArF (193 nm) or KrF (248 nm) radiation, and developed. A product comprises an article of manufacture made by the method of the invention.

摘要翻译： 光致酸发生剂化合物P + A-包含天线组P +，其包含在与光相互作用时产生质子的阳离子，以及A-包含不含氟或半金属元素如硼的弱配位的受体取代的芳族阴离子 。 在一个实施方案中，这种阴离子包含以下化合物4,5,6和7，其中E包括吸电子基团，并且去除一个质子产生芳香性。 P +包含在与光子相互作用时分解成质子和其它成分的鎓阳离子。 P +可以包含有机硫族元素鎓阳离子或卤鎓阳离子，其中在另一个实施方案中的硫属离子阳离子可以包含氧鎓，锍，硒，碲或鎓阳离子，卤鎓阳离子可以包含碘鎓，氯或溴鎓阳离子 。 一种新型化合物包括TPS CN5。 光刻制剂包括与诸如光刻聚合物的光刻组合物组合的光酸产生剂。 当在基板上暴露于光学平版照射或ArF（193nm）或KrF（248nm）辐射时，该制剂开发。 产品包括通过本发明的方法制造的制品。

公开(公告)号：US20130089956A1

公开(公告)日：2013-04-11

申请号：US13617943

申请日：2012-09-14

申请人： Josephine B. Chang ,  Martin Glodde ,  Michael A. Guillorn

发明人： Josephine B. Chang ,  Martin Glodde ,  Michael A. Guillorn

IPC分类号： H01L21/336 ,  B82Y40/00

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/775 ,  H01L51/055 ,  H01L51/102 ,  Y10S977/742 ,  Y10S977/938

摘要： A method to fabricate a carbon nanotube (CNT)-based transistor includes providing a substrate having a CNT disposed over a surface; forming a protective electrically insulating layer over the CNT and forming a first multi-layer resist stack (MLRS) over the protective electrically insulating layer. The first MLRS includes a bottom layer, an intermediate layer and a top layer of resist. The method further includes patterning and selectively removing a portion of the first MLRS to define an opening for a gate stack while leaving the bottom layer; selectively removing a portion of the protective electrically insulating layer within the opening to expose a first portion of the CNT; forming the gate stack within the opening and upon the exposed first portion of the carbon nanotube, followed by formation of source and drain contacts also in accordance with the inventive method so as to expose second and third portions of the CNT.

摘要翻译： 制造基于碳纳米管（CNT）的晶体管的方法包括：提供具有设置在表面上的CNT的衬底; 在所述CNT上形成保护电绝缘层，并在所述保护电绝缘层上形成第一多层抗蚀剂叠层（MLRS）。 第一MLRS包括底层，中间层和顶层抗蚀剂。 该方法还包括图案化并选择性地移除第一MLRS的一部分以在离开底层的同时限定栅极堆叠的开口; 选择性地去除所述开口内的所述保护电绝缘层的一部分以暴露所述CNT的第一部分; 在开口内和在碳纳米管的暴露的第一部分之后形成栅极堆叠，随后根据本发明的方法形成源极和漏极接触，以暴露CNT的第二和第三部分。

公开(公告)号：US20130087767A1

公开(公告)日：2013-04-11

申请号：US13270648

申请日：2011-10-11

申请人： Josephine B. Chang ,  Martin Glodde ,  Michael A. Guillorn

发明人： Josephine B. Chang ,  Martin Glodde ,  Michael A. Guillorn

IPC分类号： H01L49/02 ,  H01L49/00

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/775 ,  H01L51/055 ,  H01L51/102 ,  Y10S977/742 ,  Y10S977/938

摘要： A structure includes a substrate having a carbon nanotube (CNT) disposed over a surface. The CNT is partially disposed within a protective electrically insulating layer. The structure further includes a gate stack disposed over the substrate. A first portion of a length of the CNT not covered by the protective electrically insulating layer passes through the gate stack. Source and drain contacts are disposed adjacent to the gate stack, where second and third portions of the length of CNT not covered by the protective electrically insulating layer are conductively electrically coupled to the source and drain contacts. The gate stack and the source and drain contacts are contained within the protective electrically insulating layer and within an electrically insulating organic planarization layer that is disposed over the protective electrically insulating layer. A method to fabricate a CNT-based transistor is also described.

摘要翻译： 结构包括具有设置在表面上的碳纳米管（CNT）的基板。 CNT部分地设置在保护性电绝缘层内。 该结构还包括设置在衬底上的栅极堆叠。 未被保护电绝缘层覆盖的CNT的长度的第一部分通过栅极堆叠。 源极和漏极触点设置成与栅极堆叠相邻，其中未被保护电绝缘层覆盖的CNT的长度的第二和第三部分导电地电耦合到源极和漏极触点。 栅极堆叠以及源极和漏极触点包含在保护电绝缘层内并且设置在保护性电绝缘层之上的电绝缘的有机平坦化层内。 还描述了制造CNT基晶体管的方法。

公开(公告)号：US08293451B2

公开(公告)日：2012-10-23

申请号：US12543003

申请日：2009-08-18

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US08803129B2

公开(公告)日：2014-08-12

申请号：US13270648

申请日：2011-10-11

申请人： Josephine B Chang ,  Martin Glodde ,  Michael A. Guillorn

发明人： Josephine B Chang ,  Martin Glodde ,  Michael A. Guillorn

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L29/76 ,  H01L21/02 ,  H01L21/84 ,  H01L21/336 ,  H01L51/00 ,  H01L29/775 ,  H01L29/423

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/775 ,  H01L51/055 ,  H01L51/102 ,  Y10S977/742 ,  Y10S977/938

摘要： A structure includes a substrate having a carbon nanotube (CNT) disposed over a surface. The CNT is partially disposed within a protective electrically insulating layer. The structure further includes a gate stack disposed over the substrate. A first portion of a length of the CNT not covered by the protective electrically insulating layer passes through the gate stack. Source and drain contacts are disposed adjacent to the gate stack, where second and third portions of the length of CNT not covered by the protective electrically insulating layer are conductively electrically coupled to the source and drain contacts. The gate stack and the source and drain contacts are contained within the protective electrically insulating layer and within an electrically insulating organic planarization layer that is disposed over the protective electrically insulating layer. A method to fabricate a CNT-based transistor is also described.

摘要翻译： 结构包括具有设置在表面上的碳纳米管（CNT）的基板。 CNT部分地设置在保护性电绝缘层内。 该结构还包括设置在衬底上的栅极堆叠。 未被保护电绝缘层覆盖的CNT的长度的第一部分通过栅极堆叠。 源极和漏极触点设置成与栅极堆叠相邻，其中未被保护电绝缘层覆盖的CNT的长度的第二和第三部分导电地电耦合到源极和漏极触点。 栅极堆叠以及源极和漏极触点包含在保护电绝缘层内并且设置在保护性电绝缘层之上的电绝缘的有机平坦化层内。 还描述了制造CNT基晶体管的方法。

公开(公告)号：US08722307B2

公开(公告)日：2014-05-13

申请号：US13118013

申请日：2011-05-27

申请人： Seiichiro Tachibana ,  Kazumi Noda ,  Masaki Ohashi ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

发明人： Seiichiro Tachibana ,  Kazumi Noda ,  Masaki Ohashi ,  Takeshi Kinsho ,  Wu-Song Huang ,  Dario L. Goldfarb ,  Wai-Kin Li ,  Martin Glodde

IPC分类号： G03F7/004 ,  G03F7/11

CPC分类号： G03F7/038 ,  G03F7/0046 ,  G03F7/091

摘要： A composition comprising a polymer comprising repeat units selected from formulae (1) to (4), an aromatic ring-containing polymer, a near-infrared absorbing dye, and a solvent is used to form a near-infrared absorptive film. R1, R7, R9, and R14 are H, methyl, fluorine or trifluoromethyl, R2 to R6 are H, F, trifluoromethyl, —C(CF3)2OR16, alkyl or alkoxy, at least one of R2 to R6 being F or a fluorinated group, R16, R8 and R13 are H or a monovalent organic group, L1 is a single bond or —C(═O)O—, m is 0 or 1, L2 is a di- or trivalent hydrocarbon group, n is 1 or 2, R10 to R12 are H, hydroxyl, halogen or a monovalent organic group, and R15 is a fluorinated C2-C15 hydrocarbon group.

摘要翻译： 包含含有选自式（1）至（4）的重复单元，含芳族环的聚合物，近红外吸收染料和溶剂的聚合物的组合物用于形成近红外吸收膜。 R1，R7，R9和R14是H，甲基，氟或三氟甲基，R2至R6是H，F，三氟甲基，-C（CF3）2OR16，烷基或烷氧基，R2至R6中的至少一个为F或氟化 基团R 16，R 8和R 13为H或一价有机基团，L 1为单键或-C（= O）O-，m为0或1，L 2为二价或三价烃基，n为1或 2，R 10〜R 12为H，羟基，卤素或一价有机基团，R 15为氟代C 2 -C 15烃基。