公开(公告)号：US20180102461A1

公开(公告)日：2018-04-12

申请号：US15817216

申请日：2017-11-19

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Huining WANG ,  Sheng-hsien HSU ,  Kang-wei PENG ,  Su-hui LIN ,  Chen-ke HSU

IPC: H01L33/42 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L25/075

CPC classification number: H01L33/42 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L2933/0016

Abstract: A light-emitting diode includes from bottom to up: a substrate; a light-emitting epitaxial layer laminated by semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and metal nanomaterial groups with high visible light transmittance over the current spreading layer. The conductive metal nanomaterial groups dispersed inside the ITO current spreading layer can reduce horizontal resistance of the current spreading layer and improve horizontal spreading uniformity of current; and metal nanomaterial groups with high visible light transmittance are distributed over the upper surface of the current expansion layer for roughening and increasing light extract efficiency.