公开(公告)号：US20180102461A1

公开(公告)日：2018-04-12

申请号：US15817216

申请日：2017-11-19

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Huining WANG ,  Sheng-hsien HSU ,  Kang-wei PENG ,  Su-hui LIN ,  Chen-ke HSU

IPC: H01L33/42 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L25/075

CPC classification number: H01L33/42 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L2933/0016

Abstract: A light-emitting diode includes from bottom to up: a substrate; a light-emitting epitaxial layer laminated by semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and metal nanomaterial groups with high visible light transmittance over the current spreading layer. The conductive metal nanomaterial groups dispersed inside the ITO current spreading layer can reduce horizontal resistance of the current spreading layer and improve horizontal spreading uniformity of current; and metal nanomaterial groups with high visible light transmittance are distributed over the upper surface of the current expansion layer for roughening and increasing light extract efficiency.

公开(公告)号：US20170141266A1

公开(公告)日：2017-05-18

申请号：US15422216

申请日：2017-02-01

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Sheng-hsien HSU ,  Gong CHEN ,  Su-hui LIN ,  Yu-chieh HUANG ,  Chen-ke HSU

IPC: H01L33/22 ,  H01L33/16 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0058

Abstract: A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C surface (i.e. (0001) surface); and the patterned sapphire substrate may have no C surface on the growth surface to reduce the threading dislocation density of the GaN epitaxial material on the sapphire substrate.

公开(公告)号：US20170263812A1

公开(公告)日：2017-09-14

申请号：US15607461

申请日：2017-05-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Chia-hung CHANG ,  Gong CHEN ,  Su-hui LIN ,  Kang-wei PENG ,  Sheng-hsien HSU ,  Chuan-gui LIU ,  Xiao-xiong LIN ,  Yu ZHOU ,  Jing-jing WEI ,  Jing HUANG

IPC: H01L33/02 ,  H01L27/15 ,  H01L33/60 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/025 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/60

Abstract: An LED fabrication method includes forming impurity release holes by focusing a laser at the substrate back surface, and forming invisible explosion points by focusing a laser inside the substrate on positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, thereby avoiding low external quantum efficiency resulting from adherence of impurities to the side wall of the invisible explosion points. By focusing on a position with 10 μm˜40 ˜m inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.