公开(公告)号：US09337384B2

公开(公告)日：2016-05-10

申请号：US14643394

申请日：2015-03-10

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lingfeng Yin ,  Suhui Lin ,  Jiansen Zheng ,  Chuangui Liu ,  Yide Ou ,  Qing Wang

IPC: H01L33/00 ,  H01L33/14 ,  H01L33/40 ,  H01L33/08 ,  H01L33/32

CPC classification number: H01L33/14 ,  H01L33/08 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016 ,  H01L2933/0033

Abstract: A light-emitting diode includes a substrate; a light-emitting epitaxial layer, laminated by semiconductor material layers and formed over the substrate; a first current spreading layer over the light-emitting epitaxial layer; an adhesive layer with alternating second current spreading layers and first metal barrier layers over the first current spreading layer, including three structure layers; a second metal barrier layer over the adhesive layer with alternating second current spreading layers and metal barrier layers; and a metal electrode layer over the second metal barrier layer.

Abstract translation: 发光二极管包括基板; 由半导体材料层层叠并形成在基板上的发光外延层; 在发光外延层上的第一电流扩散层; 具有交替的第二电流扩散层和在所述第一电流扩散层上的第一金属阻挡层的粘合剂层，包括三个结构层; 在具有交替的第二电流扩展层和金属阻挡层的粘合剂层上的第二金属阻挡层; 以及在所述第二金属阻挡层上方的金属电极层。

公开(公告)号：US09337406B2

公开(公告)日：2016-05-10

申请号：US14641383

申请日：2015-03-07

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lingfeng Yin ,  Suhui Lin ,  Jiansen Zheng ,  Chuangui Liu ,  Yide Ou ,  Gong Chen

IPC: H01L29/15 ,  H01L33/62 ,  H01L33/38 ,  H01L33/42 ,  H01L33/00 ,  H01L33/08 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A GaN-based LED with a current spreading structure, the LED including a substrate, a light-emitting epitaxial layer over the substrate, and a current spreading structure over the light-emitting epitaxial layer. The current spreading structure includes a transparent electrode spreading bar, and a metal electrode spreading bar attached to the side wall of the transparent electrode spreading bar. The current spreading structure can improve the current spreading effect, reducing or eliminating of electrode shading, improving luminous efficiency of the LED, and avoid or reduce high voltage (Vf).

Abstract translation: 具有电流扩散结构的GaN基LED，LED包括衬底，衬底上的发光外延层以及在发光外延层上的电流扩散结构。 电流扩展结构包括透明电极扩散棒和附着在透明电极扩散棒的侧壁上的金属电极扩散杆。 电流扩展结构可以提高电流扩散效果，减少或消除电极阴影，提高LED的发光效率，避免或降低高电压（Vf）。

公开(公告)号：US09356190B2

公开(公告)日：2016-05-31

申请号：US14536713

申请日：2014-11-10

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jiansen Zheng ,  Suhui Lin ,  Kangwei Peng ,  Lingyuan Hong ,  Lingfeng Yin

IPC: H01L33/10 ,  H01L33/46 ,  H01L33/32 ,  H01L33/14

CPC classification number: H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/46

Abstract: A GaN-based LED includes: a substrate with front and back sides; an epitaxial layer formed over the front side of the substrate and including, from top down, a P-type layer, a light-emitting area, and an N-type layer; a current spreading layer formed over the P-type layer; a P electrode formed over the current spreading layer; a first reflecting layer between the current spreading layer and the epitaxial layer, disposed at a peripheral area of the epitaxial layer in a band-shaped distribution; and a second reflecting layer over the back side the substrate. The band-shaped or annular distribution can increase a probability light extraction of the LED sideways. By controlling the ratio of lights extracted upwards and sideways, the light-emitting distribution evenness can be adjusted and the uneven heat dissipation can be improved.

Abstract translation: GaN基LED包括：具有正面和背面的基板; 外延层，形成在所述基板的前侧，并且从上到下包括P型层，发光区域和N型层; 形成在P型层上的电流扩散层; 形成在电流扩展层上的P电极; 在所述电流扩展层和所述外延层之间的第一反射层，设置在所述外延层的外围区域的带状分布中; 以及在衬底的背侧上的第二反射层。 带状或环形分布可以增加侧向LED的概率光提取。 通过控制向上和向侧提取的光的比例，可以调节发光分布均匀性并且可以提高不均匀的散热。

公开(公告)号：US09190572B2

公开(公告)日：2015-11-17

申请号：US14718026

申请日：2015-05-20

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lingfeng Yin ,  Suhui Lin ,  Jiansen Zheng ,  Lingyuan Hong ,  Chuangui Liu ,  Yide Ou ,  Gong Chen

IPC: H01L33/42 ,  C23C14/35 ,  H01L33/38 ,  H01L33/00 ,  C23C14/58 ,  C23C14/02

CPC classification number: H01L33/42 ,  C23C14/024 ,  C23C14/086 ,  C23C14/24 ,  C23C14/35 ,  C23C14/58 ,  C23C14/5806 ,  H01L33/005 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A light emitting diode includes: a substrate; a light-emitting epitaxial layer, from bottom to up, laminated by semiconductor material layers of a first confinement layer, a light-emitting layer and a second confinement layer over the substrate; a current blocking layer over partial region of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and is divided into a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with thickness larger than that of the light-emitting region, thus forming a good ohmic contact between this structure and the light-emitting epitaxial layer and reducing light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure, which guarantees current spreading performance and reduces working voltage and light absorption.

Abstract translation: 发光二极管包括：基板; 从底部到顶部的发光外延层，通过基板上的第一限制层，发光层和第二限制层的半导体材料层层叠; 在发光外延层的部分区域上的电流阻挡层; 在电流阻挡层上延伸到发光外延层表面并被分成发光区域和非发光区域的透明导电结构，其中非发光区域对应于 电流阻挡层的厚度大于发光区域的电流阻挡层，从而在该结构和发光外延层之间形成良好的欧姆接触并降低光吸收; 以及在透明导电结构的非发光区域上的P电极，其保证电流扩展性能并降低工作电压和光吸收。