公开(公告)号：US09947830B2

公开(公告)日：2018-04-17

申请号：US15422216

申请日：2017-02-01

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Sheng-hsien Hsu ,  Gong Chen ,  Su-hui Lin ,  Yu-chieh Huang ,  Chen-ke Hsu

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/32 ,  H01L33/06 ,  H01L33/16

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0058

Abstract: A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C surface (i.e. (0001) surface); and the patterned sapphire substrate may have no C surface on the growth surface to reduce the threading dislocation density of the GaN epitaxial material on the sapphire substrate.