公开(公告)号：US09711469B2

公开(公告)日：2017-07-18

申请号：US14715445

申请日：2015-05-18

申请人： XINTEC INC.

发明人： Geng-Peng Pan ,  Yi-Ming Chang ,  Chia-Sheng Lin

IPC分类号： H01L23/00 ,  H01L21/033 ,  H01L21/302 ,  H01L23/48 ,  H01L21/268 ,  H01L21/48 ,  H01L21/768

CPC分类号： H01L24/03 ,  H01L21/0273 ,  H01L21/0334 ,  H01L21/268 ,  H01L21/302 ,  H01L21/48 ,  H01L21/481 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L2224/0231 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/03831 ,  H01L2224/05017 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2924/00014

摘要： A manufacturing method of a semiconductor structure includes the following steps. A first isolation layer is formed on a first surface of a wafer substrate. A conductive pad is formed on the first isolation layer. A hollow region through the first surface and a second surface of the wafer substrate is formed, such that the first isolation layer is exposed through the hollow region. A laser etching treatment is performed on the first isolation layer that is exposed through the hollow region, such that a first opening is formed in the first isolation layer, and a concave portion exposed through the first opening is formed in the conductive pad.