公开(公告)号：US20040077122A1

公开(公告)日：2004-04-22

申请号：US10273901

申请日：2002-10-17

Applicant: Xerox Corporation

Inventor： Yiliang Wu ,  Beng S. Ong

IPC: H01L021/00 ,  H01L021/84

CPC classification number: H01L51/0044 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

Abstract: A process including: creating a composition composed of a liquid and a self-organizable polymer at least partially dissolved in the liquid, resulting in dissolved polymer molecules; reducing the solubility of the dissolved polymer molecules to induce formation of structurally ordered polymer aggregates in the composition; depositing a layer of the composition including the structurally ordered polymer aggregates; and drying at least partially the layer to result in a structurally ordered layer, wherein the structurally ordered layer is part of an electronic device and the structurally ordered layer exhibits increased charge transport capability.

Abstract translation: 一种方法，包括：产生由液体和至少部分溶解在液体中的自组织聚合物组成的组合物，产生溶解的聚合物分子; 降低溶解的聚合物分子的溶解度以诱导组合物中结构有序聚合物聚集体的形成; 沉积包含结构有序聚合物聚集体的组合物层; 并且至少部分地干燥所述层以产生结构有序的层，其中所述结构有序的层是电子器件的一部分，并且所述结构有序的层表现出增加的电荷传输能力。

公开(公告)号：US20030228718A1

公开(公告)日：2003-12-11

申请号：US10397561

申请日：2003-03-25

Applicant: Xerox Corporation

Inventor： Dasarao K. Murti ,  Beng S. Ong ,  James M. Duff

IPC: H01L051/40

CPC classification number: H01L51/0541 ,  H01L51/0003 ,  H01L51/0078 ,  H01L51/0545

Abstract: A field effect transistor composed of: an insulating layer; a gate electrode; a semiconductor layer including an organic semiconductor material and a binder resin; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.

Abstract translation: 一种场效应晶体管，包括：绝缘层; 栅电极; 包括有机半导体材料和粘合剂树脂的半导体层; 源电极; 和漏电极，其中绝缘层，栅极电极，半导体层，源电极和漏极电极只要栅电极和半导体层都接触绝缘层，并且源电极 并且漏电极都接触半导体层。

公开(公告)号：US20040075120A1

公开(公告)日：2004-04-22

申请号：US10273896

申请日：2002-10-17

Applicant: Xerox Corporation

Inventor： Yiliang Wu ,  Ping Liu ,  Beng S. Ong ,  Dasarao K. Murti

IPC: H01L029/76 ,  H01L031/062 ,  C30B001/00 ,  H01L021/20

CPC classification number: H01L51/0545 ,  C08G61/02 ,  C08G61/126 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0541

Abstract: A process including: selecting a composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation; dissolving at the elevated temperature at least a portion of the polymer in the liquid; lowering the temperature of the composition from the elevated temperature to the first lower temperature; agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature; depositing a layer of the composition wherein the composition is at a second lower temperature lower than the elevated temperature; and drying at least partially the layer.

Abstract translation: 一种方法，包括：选择包含聚合物和液体的组合物，其中所述聚合物在室温下在液体中表现出较低的溶解度，但在升高的温度下在液体中表现出较高的溶解度，其中当升高的温度降低至 第一低温无搅动; 在升高的温度下溶解液体中聚合物的至少一部分; 将组合物的温度从升高的温度降低到第一较低温度; 搅拌组合物以破坏任何胶凝，其中搅拌在组合物的升高温度降低到第一较低温度之前，同时或之后的任何时间开始; 沉积组合物层，其中所述组合物处于低于升高的温度的第二较低温度; 并至少部分地干燥该层。

公开(公告)号：US20030227014A1

公开(公告)日：2003-12-11

申请号：US10167683

申请日：2002-06-11

Applicant: Xerox Corporation.

Inventor： Dasarao K. Murti ,  Beng S. Ong ,  James M. Duff

IPC: H01L029/04 ,  H01L031/036 ,  H01L029/76 ,  H01L029/94

CPC classification number: H01L51/0541 ,  H01L51/0003 ,  H01L51/0078 ,  H01L51/0545

Abstract: A process comprising: creating a dispersion including: (a) a continuous phase comprising a solvent, a binder resin at least substantially dissolved in the solvent, and (b) a disperse phase comprising an organic semiconductor material; and solution coating using the dispersion to form a semiconductor layer of an electronic device, wherein the semiconductor layer comprises the organic semiconductor material and the binder resin.

Abstract translation: 一种方法，包括：产生分散体，其包括：（a）包含溶剂，至少基本上溶解在溶剂中的粘合剂树脂的连续相，和（b）包含有机半导体材料的分散相; 以及使用所述分散体形成电子器件的半导体层的溶液涂覆，其中所述半导体层包含所述有机半导体材料和所述粘合剂树脂。

公开(公告)号：US20030160234A1

公开(公告)日：2003-08-28

申请号：US10042342

申请日：2002-01-11

Applicant: Xerox Corporation

Inventor： Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

IPC: H01L035/24

CPC classification number: H01B1/127 ,  C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

Abstract: An electronic device containing a polythiophene derived from a monomer segment or monomer segments containing two 2,5-thienylene segments, (I) and (II), and an optional divalent linkage D 1 wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.

Abstract translation: 含有衍生自单体链段的聚噻吩的电子装置或含有两个2,5-亚噻吩基链段（I）和（II）的单体链段和任选的二价键D，其中A是侧链; B是氢或侧链; 和D是二价键，其中单体链段中的A取代的亚噻吩基单元（I）的数目为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5， 并且二价键D的数目为0或1。

公开(公告)号：US20030112490A1

公开(公告)日：2003-06-19

申请号：US10195641

申请日：2002-07-12

Applicant: Xerox Corporation

Inventor： Guerino G. Sacripante ,  H. Bruce Goodbrand ,  Beng S. Ong ,  Robert A. Sprague

IPC: G02B026/00

CPC classification number: G09F9/372 ,  G02B26/026

Abstract: A display material for use in an electric paper system includes two opposing outer surfaces, between which is disposed a plurality of optically and electrically anisotropic elements suspended in a substance capable of being liquified. A rotatable disposition of each element is achievable while the element is suspended in the substance and the substance is liquified.

Abstract translation: 用于电子纸系统的显示材料包括两个相对的外表面，其间设置有悬浮在能够液化的物质中的多个光学和电气各向异性元件。 当元件悬浮在物质中并且物质被液化时，可以实现每个元件的可旋转布置。

公开(公告)号：US20040104386A1

公开(公告)日：2004-06-03

申请号：US10713322

申请日：2003-11-14

Applicant: Xerox Corporation

Inventor： Yiliang Wu ,  Beng S. Ong

IPC: H01L035/24

CPC classification number: H01L51/0044 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

Abstract: A thin film transistor wherein the semiconductor layer is prepared by a process including: creating a composition comprising a liquid and a self-organizable polymer at least partially dissolved in the liquid, resulting in dissolved polymer molecules; reducing the solubility of the dissolved polymer molecules to induce formation of structurally ordered polymer aggregates in the composition; depositing a layer of the composition including the structurally ordered polymer aggregates; and drying at least partially the layer resulting in the structurally ordered semiconductor layer, wherein the structural order of the semiconductor layer increases the charge transport capability of the semiconductor layer.

Abstract translation: 一种薄膜晶体管，其中所述半导体层通过以下方法制备，所述方法包括：产生包含至少部分溶解在所述液体中的液体和自组织聚合物的组合物，导致溶解的聚合物分子; 降低溶解的聚合物分子的溶解度以诱导组合物中结构有序聚合物聚集体的形成; 沉积包含结构有序聚合物聚集体的组合物层; 并且至少部分地干燥所述层，产生结构有序的半导体层，其中半导体层的结构顺序增加了半导体层的电荷传输能力。

公开(公告)号：US20040075124A1

公开(公告)日：2004-04-22

申请号：US10720597

申请日：2003-11-24

Applicant: Xerox Corporation

Inventor： Yiliang Wu ,  Ping Liu ,  Beng S. Ong ,  Dasarao K. Murti

IPC: H01L029/76 ,  H01L031/062 ,  H01L027/01 ,  H01L031/0392

CPC classification number: H01L51/0545 ,  C08G61/02 ,  C08G61/126 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0525 ,  H01L51/0541

Abstract: A thin film transistor including: an insulating layer; a gate electrode; a semiconductor layer including coalesced structurally ordered polymer aggregates of a self-organizable polymer, wherein the self-organizable polymer is of a type capable of gelling; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.

Abstract translation: 一种薄膜晶体管，包括：绝缘层; 栅电极; 包含可自组织聚合物的结合有序的聚合物聚集体的半导体层，其中所述自组织聚合物是能够凝胶化的类型; 源电极; 和漏电极，其中绝缘层，栅极电极，半导体层，源电极和漏极电极只要栅电极和半导体层都接触绝缘层，并且源电极 并且漏电极都接触半导体层。

公开(公告)号：US20030166829A1

公开(公告)日：2003-09-04

申请号：US10042360

申请日：2002-01-11

Applicant: Xerox Corporation

Inventor： Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

IPC: C08G079/08

CPC classification number: C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

Abstract: A polythiophene wherein the monomer segments thereof contain 1 wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent segment, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent segments D is 0 or 1.

Abstract translation: 聚噻吩，其中单体链段含有其中A是侧链; B是氢或侧链; D是二价段，单体链段中的A取代的亚噻吩基单元（I）的数量为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5， 并且二价段D的数目为0或1。

公开(公告)号：US20030136958A1

公开(公告)日：2003-07-24

申请号：US10042356

申请日：2002-01-11

Applicant: Xerox Corporation

Inventor： Beng S. Ong ,  Lu Jiang ,  Yiliang Wu ,  Dasarao K. Murti

IPC: H01L035/24 ,  H01L051/00

CPC classification number: C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

Abstract: An electronic device containing a polythiophene of Formula (I) 1 wherein R and Rnull are side chains; A is a divalent linkage; x and y represent the number of unsubstituted thienylene units; z is 0 or 1, and wherein the sum of x and y is greater than about zero; m represents the number of segments; and n represents the degree of polymerization.

Abstract translation: 含有式（I）的聚噻吩的电子器件，其中R和R'是侧链; A是二价键; x和y表示未取代的噻吩基单元的数目; z为0或1，并且其中x和y的和大于约零; m表示段数; n表示聚合度。