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    Apparatus and methods for modeling and simulating the effect of mismatch in design flows of integrated circuits
    1.
    发明授权
    Apparatus and methods for modeling and simulating the effect of mismatch in design flows of integrated circuits 失效
    用于建模和模拟集成电路设计流程中不匹配影响的装置和方法

    公开(公告)号：US06560755B1

    公开(公告)日：2003-05-06

    申请号：US09648396

    申请日：2000-08-24

    申请人： Xisheng Zhang ,  James Chieh-Tsung Chen ,  Zhihong Liu ,  Jushan Xie ,  Xucheng Pang ,  Jingkun Fang

    发明人： Xisheng Zhang ,  James Chieh-Tsung Chen ,  Zhihong Liu ,  Jushan Xie ,  Xucheng Pang ,  Jingkun Fang

    IPC分类号： G06F1750

    CPC分类号： G06F17/5036

    摘要： An exemplary method for simulating the effect of mismatch in design flows comprises receiving measured data, receiving an original model, extracting a mismatch model based on the measured data and the original model, attaching the mismatch model to the netlist to obtain a modified netlist, and simulating an effect of mismatch based on the modified netlist. In one embodiment, the extracting of a mismatch model includes selecting a set of model parameters, generating a distribution of mismatch values for each of the model parameters, extracting a set of linking coefficients based on said mismatch values, and extracting said mismatch model based on said set of linking coefficients. In another embodiment, the attaching of the mismatch model to the netlist includes determining a number of layers in the netlist, generating a copy of a lower layer in the netlist, the copy including a reference to a mismatch model definition, generating a copy of a higher layer in the netlist, replacing a reference to the lower layer in the higher layer by a reference to the copy of the lower layer, and generating a new model definition.

    摘要翻译： 用于模拟设计流程中的不匹配效应的示例性方法包括接收测量数据，接收原始模型，基于测量数据和原始模型提取失配模型，将不匹配模型附加到网表以获得修改的网表，以及 基于修改的网表模拟不匹配的影响。 在一个实施例中，提取失配模型包括选择一组模型参数，生成每个模型参数的失配值分布，基于所述失配值提取一组链接系数，以及基于 所述一组链接系数。 在另一个实施例中，将不匹配模型附加到网表包括确定网表中的层数，生成网表中较低层的副本，该副本包括对不匹配模型定义的引用，生成 网表中的较高层，通过对较低层的副本的引用替代对较高层中较低层的引用，并生成新的模型定义。

    Realistic worst-case circuit simulation system and method
    2.
    发明授权
    Realistic worst-case circuit simulation system and method 失效
    现实最坏情况下的电路仿真系统及方法

    公开(公告)号：US5790436A

    公开(公告)日：1998-08-04

    申请号：US963510

    申请日：1997-11-03

    申请人： James Chieh-Tsung Chen ,  Zhihong Liu ,  Chenming Hu ,  Ping Keung Ko

    发明人： James Chieh-Tsung Chen ,  Zhihong Liu ,  Chenming Hu ,  Ping Keung Ko

    IPC分类号： G06F17/50 ,  H01L21/66 ,  G06F17/00

    CPC分类号： H01L22/20 ,  G06F17/5036

    摘要： A system and method of simulating operation of an integrated circuit. First, circuit characteristics of circuit components are measured, and a set of circuit simulation model parameters are generated for each measured circuit component. Then, the operation of predefined circuit primitives is simulated using each of the generated sets of circuit simulation model parameters. The circuit primitives include the measured circuit components. The simulated operations are then analyzed to select ones of the simulated operations that are worst, best and nominal with respect to a specified circuit performance parameter and to extract model parameters corresponding to the worst case, best case and nominal case sets of circuit simulation model parameters from the generated sets of circuit simulation model parameters. Each extracted set of circuit simulation model parameters comprises one of the generated sets of circuit simulation model parameters. Then a target circuit is simulated using each of the worst case, best case and nominal case sets of circuit simulation model parameters so as to generate data representing the target circuits under worst case, best case and nominal case manufacturing conditions.

    摘要翻译： 一种模拟集成电路运行的系统和方法。 首先测量电路元件的电路特性，并为每个测量的电路元件生成一组电路仿真模型参数。 然后，使用每个生成的电路仿真模型参数集来模拟预定义电路图元的操作。 电路图元包括测量的电路元件。 然后分析模拟操作以选择相对于指定电路性能参数为最差，最佳和标称的模拟操作，并提取对应于电路仿真模型参数的最坏情况，最佳情况和标称情况集的模型参数 从生成的电路模拟模型参数集。 每个提取的电路仿真模型参数集包括生成的电路仿真模型参数集之一。 然后使用电路仿真模型参数的最坏情况，最佳情况和标称情况集合中的每一个模拟目标电路，以便在最坏情况，最佳情况和名义情况制造条件下生成表示目标电路的数据。

    MOSFET Modeling for IC Design Accurate for High Frequencies
    4.
    发明申请
    MOSFET Modeling for IC Design Accurate for High Frequencies 失效
    用于高频率的IC设计的MOSFET建模

    公开(公告)号：US20080109204A1

    公开(公告)日：2008-05-08

    申请号：US11959068

    申请日：2007-12-18

    申请人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    发明人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036

    摘要： The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

    摘要翻译： 本发明提供了用于对MOSFET的高频和噪声表征进行建模的方法。 这些模型可以在设计流程中作为SPICE或其他仿真的一部分轻松实现。 特别地，本发明能够提供可以精确地预测MOSFET的低频，高频和噪声特征的MOSFET的子电路表示。 描述了用户可以同时优化所有这些特征的界面。 此外，提出了用于构建模型的方法，其可以通过制造过程来预测MOSFET的变化并产生相应的角模型。

    MOSFET modeling for IC design accurate for high frequencies
    5.
    发明申请
    MOSFET modeling for IC design accurate for high frequencies 有权

    公开(公告)号：US20050114111A1

    公开(公告)日：2005-05-26

    申请号：US11016519

    申请日：2004-12-17

    申请人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    发明人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036

    摘要： The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

    MOSFET modeling for IC design accurate for high frequencies
    6.
    发明授权
    MOSFET modeling for IC design accurate for high frequencies 有权
    用于IC设计的MOSFET建模为高频准确

    公开(公告)号：US07313770B2

    公开(公告)日：2007-12-25

    申请号：US11016519

    申请日：2004-12-17

    申请人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    发明人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036

    摘要： The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

    摘要翻译： 本发明提供了用于对MOSFET的高频和噪声表征进行建模的方法。 这些模型可以在设计流程中作为SPICE或其他仿真的一部分轻松实现。 特别地，本发明能够提供可以精确地预测MOSFET的低频，高频和噪声特征的MOSFET的子电路表示。 描述了用户可以同时优化所有这些特征的界面。 此外，提出了用于构建模型的方法，其可以通过制造过程来预测MOSFET的变化并产生相应的角模型。

    MOSFET modeling for IC design accurate for high frequencies
    7.
    发明授权
    MOSFET modeling for IC design accurate for high frequencies 失效
    用于IC设计的MOSFET建模为高频准确

    公开(公告)号：US07735033B2

    公开(公告)日：2010-06-08

    申请号：US11959068

    申请日：2007-12-18

    申请人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    发明人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036

    摘要： The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

    摘要翻译： 本发明提供了用于对MOSFET的高频和噪声表征进行建模的方法。 这些模型可以在设计流程中作为SPICE或其他仿真的一部分轻松实现。 特别地，本发明能够提供可以精确地预测MOSFET的低频，高频和噪声特征的MOSFET的子电路表示。 描述了用户可以同时优化所有这些特征的界面。 此外，提出了用于构建模型的方法，其可以通过制造过程来预测MOSFET的变化并产生相应的角模型。

    MOSFET modeling for IC design accurate for high frequencies
    8.
    发明授权
    MOSFET modeling for IC design accurate for high frequencies 有权
    用于IC设计的MOSFET建模为高频准确

    公开(公告)号：US06851097B2

    公开(公告)日：2005-02-01

    申请号：US10616765

    申请日：2003-07-09

    申请人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    发明人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    IPC分类号： G06F17/50 ,  G06F9/45 ,  G06F17/60

    CPC分类号： G06F17/5036

    摘要： The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

    摘要翻译： 本发明提供了用于对MOSFET的高频和噪声表征进行建模的方法。 这些模型可以在设计流程中作为SPICE或其他仿真的一部分轻松实现。 特别地，本发明能够提供可以精确地预测MOSFET的低频，高频和噪声特征的MOSFET的子电路表示。 描述了用户可以同时优化所有这些特征的界面。 此外，提出了用于构建模型的方法，其可以通过制造过程来预测MOSFET的变化并产生相应的角模型。

    MOSFET modeling for IC design accurate for high frequencies
    9.
    发明授权
    MOSFET modeling for IC design accurate for high frequencies 有权
    用于IC设计的MOSFET建模为高频准确

    公开(公告)号：US06618837B1

    公开(公告)日：2003-09-09

    申请号：US09661328

    申请日：2000-09-14

    申请人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    发明人： Xisheng Zhang ,  Hancheng Liang ,  Zhihong Liu ,  Jianhe Guo

    IPC分类号： G06F1750

    CPC分类号： G06F17/5036

    摘要： The present invention presents methods for modeling the high frequency and noise characterization of MOSFETs. The models may be readily implemented as part of a SPICE or other simulation in a design flow. In particular, this invention is capable of providing a sub-circuit representation of a MOSFET that can accurately predicate a MOSFET's low frequency, high frequency, and noise characterizations. An interface is described through which a user may simultaneously optimize all of these characterizations. Further, methods are presented for building models that can predicate the variations in MOSFETs due to manufacturing processes and generate a corresponding corner model.

    摘要翻译： 本发明提供了用于对MOSFET的高频和噪声表征进行建模的方法。 这些模型可以在设计流程中作为SPICE或其他仿真的一部分轻松实现。 特别地，本发明能够提供可以精确地预测MOSFET的低频，高频和噪声特征的MOSFET的子电路表示。 描述了用户可以同时优化所有这些特征的界面。 此外，提出了用于构建模型的方法，其可以通过制造过程来预测MOSFET的变化并产生相应的角模型。