摘要:
Method for installing reactor coolant loop (RCL) piping of a reactor coolant system (RCS) system in a pressurized water reactor (PWR) nuclear power plant by positioning the reactor vessel, steam generator, or both, into position after attaching one or more coolant pumps, surveying coolant loop piping and a plurality of nozzles on the reactor vessel, the steam generator and coolant pump casing, or a combination thereof, with a precise measurement and 3D modeling technology for positioning data, then performing weld prep machining for the coolant loop piping on the reactor vessel side, and machining for the coolant loop piping on the steam generator side and coolant pump side based on the positioning data, and installing temporary supports for coolant loop piping and finishing the fit-up and welding between the coolant loop piping and the reactor vessel, steam generator, and each coolant pump.
摘要:
A multifunctional neurophysiologic monitoring and probing system, having a main unit (1), a main wire (2), negative electrode neurophysiologic monitoring and probing parts and positive electrode neurophysiologic monitoring and probing parts; one end of the main wire (2) is connected with the main unit (1); another end of the main wire is divided into two branch wires connecting with the negative electrode neurophysiologic monitoring and probing parts and the positive electrode neurophysiologic monitoring and probing parts respectively.
摘要:
A bearing article can include a metal substrate having a bronze layer; a PEEK layer; a PTFE composition layer overlying and penetrating the PEEK layer. A method for preparing a bearing article can include providing a metal substrate with a sintered bronze layer, electrostatic spraying a non-fluorinated polymer onto the metal substrate followed by spraying a fluorinated polymer onto the non-fluorinated polymer and heat rolling to form a laminate.
摘要:
A serial port remote control circuit includes a first interface circuit, a control circuit, an output circuit, and a power circuit. The first interface circuit converts recommended standard 232 (RS232) level signals to transistor-transistor logic (TTL) level signals or vice versa. The control circuit is connected to the first interface circuit, to convert the TTL level signals to physical bus signal or vice versa. The output circuit is connected to the control circuit, to convert the received physical bus signals from the control circuit to network bus signals or vice versa. The power circuit outputs a first voltage and a second voltage converted from the first voltage to the control circuit, the first interface circuit, and the output circuit.
摘要:
A method and an apparatus for controlling an intelligent antenna system are provided. The method includes: pre-configuring a Request Min Rate (RR), a Request Max PER (RP) and a request TX power (RTP); A). determining a current antenna configuration and a current transmitting power of the intelligent antenna system; B). reducing the transmitting power as long as the packet loss ratio does not exceed the RP with the current antenna configuration and with RR as a current transmitting rate, and adopting a reduced transmitting power as the current transmitting power; and C). switching between different antenna configurations at intervals with the current transmitting rate and the current transmitting power to obtain an antenna configuration under which the packet loss ratio is lower than the current packet loss ratio, and performing B).
摘要:
An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.
摘要:
A mobile wireless communications device and methods therefore, including receiving a signal (710), storing a portion of the received signal (730), identifying all possible pilot signals by determining slot boundary information for the stored signal portion (720), determining frame boundary information and/or scrambling code information (760) of the stored signal portion by correlating the stored signal portion with the scrambling codes based on the slot boundary information. In other embodiments, the search is performed in real-time without storing the signal.
摘要:
A vertical turning-milling complex machining center comprises a horizontally-arranged bed body (6) and a vertically-arranged column (7). The bed body (6) is provided with an X-axis lateral supporting linear track (2) and an X-axis guide screw (5). The bed body (6) is also provided with a uniaxial rotating table (1) which can reciprocate and is driven directly by a first external rotor torque motor. The column (7) is vertically provided with a Z-axis lateral supporting linear track (10), a Z-axis guide screw (9) and a crossbeam (11) that reciprocates up and down. The crossbeam (11) is provided with a transverse Y-axis linear track (13), a Y-axis guide screw (12) and a single-pendulum milling head seat frame that can reciprocate along the Y-axis guide screw (12). The single-pendulum milling head is driven directly by a second external rotor torque motor. The vertical turning-milling complex machining center uses direct-drive technology applied to a B-axis and a C-axis, the motor torque is greatly increased and functional parts can stably operate, therefore the integral rigidity and stability of the machining center are improved.
摘要:
A vertical turning-milling complex machining center comprises a horizontally-arranged bed body (6) and a vertically-arranged column (7). The bed body (6) is provided with an X-axis lateral supporting linear track (2) and an X-axis guide screw (5). The bed body (6) is also provided with a uniaxial rotating table (1) which can reciprocate and is driven directly by a first external rotor torque motor. The column (7) is vertically provided with a Z-axis lateral supporting linear track (10), a Z-axis guide screw (9) and a crossbeam (11) that reciprocates up and down. The crossbeam (11) is provided with a transverse Y-axis linear track (13), a Y-axis guide screw (12) and a single-pendulum milling head seat frame that can reciprocate along the Y-axis guide screw (12). The single-pendulum milling head is driven directly by a second external rotor torque motor. The vertical turning-milling complex machining center uses direct-drive technology applied to a B-axis and a C-axis, the motor torque is greatly increased and functional parts can stably operate, therefore the integral rigidity and stability of the machining center are improved.
摘要:
An integration approach to improve electromigration resistance in a semiconductor device is described. A via hole is formed in a stack that includes an upper dielectric layer, a middle TiN ARC, and a lower first metal layer and is filled with a conformal diffusion barrier layer and a second metal layer. A key feature is that the etch process can be selected to vary the shape and location of the via bottom. A round or partially rounded bottom is formed in the first metal layer to reduce mechanical stress near the diffusion barrier layer. On the other hand, a flat bottom which stops on or in the TiN ARC is selected when exposure of the first metal layer to subsequent processing steps is a primary concern. Electromigration resistance is found to be lower than for a via structure with a flat bottom formed in a first metal layer.