公开(公告)号：US20050034096A1

公开(公告)日：2005-02-10

申请号：US10938510

申请日：2004-09-13

申请人： Xuelong Shi ,  Jang Chen ,  Duan-Fu Hsu

发明人： Xuelong Shi ,  Jang Chen ,  Duan-Fu Hsu

IPC分类号： G03F1/08 ,  G03F7/20 ,  H01L21/027 ,  G06F17/50

CPC分类号： G03F7/705 ,  G03F7/70125 ,  G03F7/70433 ,  G03F7/70441

摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

摘要翻译： 光学邻近效应（OPE）在光刻中是众所周知的现象。 OPE由主要特征和相邻特征之间的结构相互作用产生。 本发明人已经确定，这种结构相互作用不仅影响主要特征在图像平面上的临界尺寸，而且还影响主要特征的工艺纬度。 此外，已经确定临界尺寸的变化以及主要特征的过程纬度是主要特征和相邻特征之间的光场干扰的直接后果。 根据相邻特征产生的场的相位，主要特征临界尺寸和工艺纬度可以通过建设性的光场干涉来改善，或者由于破坏性的光场干扰而降低。 由相邻特征产生的场的相位取决于俯仰以及照明角度。 对于给定的照明，禁止的音调区域是相邻特征产生的场相当地干扰主要特征的场的位置。 本发明提供一种用于确定和消除任何特征尺寸和照明条件的禁止间距区域的方法。 此外，它提供了一种用于执行照明设计以便抑制禁止音调现象以及用于散射棒辅助特征的最佳布置的方法。

公开(公告)号：US20060277522A1

公开(公告)日：2006-12-07

申请号：US11503302

申请日：2006-08-14

申请人： Xuelong Shi ,  Jang Chen ,  Duan-Fu Hsu

发明人： Xuelong Shi ,  Jang Chen ,  Duan-Fu Hsu

IPC分类号： G06F17/50 ,  G03F1/00 ,  G21K5/00

CPC分类号： G03F1/36 ,  G03F7/70125 ,  G03F7/70441

摘要： Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle. For a given illumination, the forbidden pitch region is the location where the field produced by the neighboring features interferes with the field of the main feature destructively. The present invention provides a method for determining and eliminating the forbidden pitch region for any feature size and illumination condition. Moreover, it provides a method for performing illumination design in order to suppress the forbidden pitch phenomena, and for optimal placement of scattering bar assist features.

公开(公告)号：US20060080633A1

公开(公告)日：2006-04-13

申请号：US11225888

申请日：2005-09-14

申请人： Michael Hsu ,  Thomas Laidig ,  Kurt Wampler ,  Duan-Fu Hsu ,  Xuelong Shi

发明人： Michael Hsu ,  Thomas Laidig ,  Kurt Wampler ,  Duan-Fu Hsu ,  Xuelong Shi

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441

摘要： A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.

摘要翻译： 一种生成用于成像处理模式的掩模的方法。 该方法包括以下步骤：（a）获得具有要在基底上成像的多个特征的期望目标图案; （b）使用目标图案模拟晶片图像并处理与定义的工艺相关的参数; （c）定义至少一个要素类别; （d）识别与所述至少一个特征类别相对应的所述目标图案中的特征，以及记录与所述至少一个特征类别相对应的每个特征的错误值; 和（e）生成统计摘要，其指示被识别为对应于所述至少一个特征类别的每个特征的误差值。

公开(公告)号：US20070117030A1

公开(公告)日：2007-05-24

申请号：US11655868

申请日：2007-01-22

申请人： Thomas Laidig ,  Jang Chen ,  Xuelong Shi ,  Ralph Schlief ,  Uwe Hollerbach ,  Kurt Wampler

发明人： Thomas Laidig ,  Jang Chen ,  Xuelong Shi ,  Ralph Schlief ,  Uwe Hollerbach ,  Kurt Wampler

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/68

摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

摘要翻译： 一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。 该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

公开(公告)号：US20070247610A1

公开(公告)日：2007-10-25

申请号：US11819366

申请日：2007-06-27

申请人： Xuelong Shi ,  Jang Chen

发明人： Xuelong Shi ,  Jang Chen

IPC分类号： G03B27/32

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/70516 ,  G03F7/70525

摘要： A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.

摘要翻译： 一种用于产生用于模拟多个曝光工具的成像性能的模型的方法。 该方法包括以下步骤：产生用于第一曝光工具的校准模型，该第一曝光工具能够对于给定的光刻工艺估计由第一曝光工具产生的图像，其中校准模型包括第一组基础函数; 生成第二曝光工具的模型，其能够估计由用于光刻工艺的第二曝光工具产生的图像，其中模型包括第二组基础功能; 并且将所述第二组基函数表示为所述第一组基函数的线性组合，以便生成与所述第二曝光工具相对应的等效模型函数，其中所述等效模型函数产生与由所述第二曝光工具生成的图像相对应的模拟图像 用于光刻工艺的第二曝光工具。

公开(公告)号：US20050210437A1

公开(公告)日：2005-09-22

申请号：US11051559

申请日：2005-01-27

申请人： Xuelong Shi ,  Jang Chen

发明人： Xuelong Shi ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F1/44 ,  G03F1/70 ,  G03F7/20 ,  G06F17/50 ,  G06K9/00 ,  H01L21/027

CPC分类号： G06F17/5081 ,  G03F1/36 ,  G03F1/44 ,  G03F1/68 ,  G03F7/70425 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70525 ,  G03F7/70666 ,  G06F2217/12 ,  Y02P90/265

摘要： A method for modeling a photolithography process which includes the steps of generating a calibrated model of the photolithography process capable of estimating an image to be produced by the photolithography process when utilized to image a mask pattern containing a plurality features; and determining an operational window of the calibrated model, which defines whether or not the calibrated model can accurately estimate the image to be produced by a given feature in the mask pattern.

摘要翻译： 一种用于对光刻工艺进行建模的方法，其包括以下步骤：产生光刻工艺的校准模型，其能够估计当通过光刻工艺生产的图像，以便对含有多个特征的掩模图案进行成像; 以及确定所述校准模型的操作窗口，其定义所述校准模型是否可以准确地估计由所述掩模图案中的给定特征产生的图像。

公开(公告)号：US20050142449A1

公开(公告)日：2005-06-30

申请号：US10933496

申请日：2004-09-03

申请人： Xuelong Shi ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Douglas Broeke

发明人： Xuelong Shi ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Douglas Broeke

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F9/00 ,  G06F17/50 ,  H01L21/027

CPC分类号： G03F7/705 ,  G03F1/36

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

公开(公告)号：US20050053848A1

公开(公告)日：2005-03-10

申请号：US10878490

申请日：2004-06-29

申请人： Kurt Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Chen

发明人： Kurt Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00 ,  G06F17/00 ,  H01L21/00 ,  H01L21/027

CPC分类号： G03F1/36 ,  G03F7/70433 ,  G03F7/70441

摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.

摘要翻译： 所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。 从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。 辅助特征可以相对于图像场图的轮廓的主轴定向。 此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。 此外，可以根据从图像场地图识别的极值放置辅助特征。 利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

公开(公告)号：US20050179886A1

公开(公告)日：2005-08-18

申请号：US11044711

申请日：2005-01-28

申请人： Xuelong Shi ,  Jang Chen

发明人： Xuelong Shi ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03B27/32

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/68 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/70516 ,  G03F7/70525

摘要： A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.

摘要翻译： 一种用于产生用于模拟多个曝光工具的成像性能的模型的方法。 该方法包括以下步骤：产生用于第一曝光工具的校准模型，该第一曝光工具能够对于给定的光刻工艺估计由第一曝光工具产生的图像，其中校准模型包括第一组基础函数; 生成第二曝光工具的模型，其能够估计由用于光刻工艺的第二曝光工具产生的图像，其中模型包括第二组基础功能; 并且将所述第二组基函数表示为所述第一组基函数的线性组合，以便生成与所述第二曝光工具相对应的等效模型函数，其中所述等效模型函数产生与由所述第二曝光工具生成的图像相对应的模拟图像 用于光刻工艺的第二曝光工具。

公开(公告)号：US20050142470A1

公开(公告)日：2005-06-30

申请号：US10975342

申请日：2004-10-29

申请人： Robert Socha ,  Xuelong Shi ,  Douglas Broeke ,  Jang Chen

发明人： Robert Socha ,  Xuelong Shi ,  Douglas Broeke ,  Jang Chen

IPC分类号： G03F1/14 ,  G06F17/50 ,  G03C5/00

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/70125

摘要： Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.

摘要翻译： 公开的概念包括用于优化相对于给定掩模在衬底表面中形成的图案的照明轮廓的方法和程序产品。 步骤包括在数学上表示来自给定掩码的可解析特征，从前一步骤生成干涉图表示，修改干涉图表示以最大化对应于可解析特征的强度，以及确定辅助特征尺寸，使强度侧 裂片不打印。