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    METHOD FOR PROTECTING POROUS LOW-K DIELECTRIC POST CHEMICAL MECHANICAL PLANARIZATION
    1.
    发明申请
    METHOD FOR PROTECTING POROUS LOW-K DIELECTRIC POST CHEMICAL MECHANICAL PLANARIZATION 审中-公开
    用于保护多孔低K电介质化学机械平面化方法

    公开(公告)号：US20090142885A1

    公开(公告)日：2009-06-04

    申请号：US11947858

    申请日：2007-11-30

    申请人： YA OU ,  Shom Ponoth ,  Hosadurga Shobha ,  Terry A. Spooner

    发明人： YA OU ,  Shom Ponoth ,  Hosadurga Shobha ,  Terry A. Spooner

    IPC分类号： H01L21/02

    CPC分类号： H01L21/3105 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834

    摘要： A method of forming a semiconductor structure chemically-mechanically polishes (CMP) a semiconductor structure before applying a sealant layer over the porous low-k dielectric. The process of applying the sealant layer is a selective process that causes the sealant to adhere to or deposit onto the porous low-k dielectric and to not adhere to the copper conductors. After the sealant layer is formed, the cap is applied. The parylene layer seals the pores in the low-k dielectric which prevents the low-k dielectric layer from being damaged during the cap pre-cleaning process and also prevents the cap material from penetrating into the low-k dielectric.

    摘要翻译： 在多孔低k电介质上施加密封剂层之前，半导体结构的形成方法化学机械抛光（CMP）半导体结构。 施加密封剂层的过程是使密封剂粘附或沉积到多孔低k电介质上并且不粘附到铜导体的选择性过程。 在形成密封剂层之后，施加盖。 聚对二甲苯层密封低k电介质中的孔，防止低k电介质层在盖预清洁过程中受损，并且还防止盖材料渗入低k电介质。

    INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME
    3.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME 有权
    互连结构及其制作方法

    公开(公告)号：US20090152723A1

    公开(公告)日：2009-06-18

    申请号：US11954812

    申请日：2007-12-12

    申请人： Ya Ou ,  Shom Ponoth ,  Terry A. Spooner

    发明人： Ya Ou ,  Shom Ponoth ,  Terry A. Spooner

    IPC分类号： H01L23/532 ,  H01L21/4763

    CPC分类号： C23F4/00 ,  H01L21/76805 ,  H01L21/76829 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53204 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

    摘要翻译： 提供了互连结构及其制造方法。 更具体地，互连结构是无缺陷的封装互连结构。 该结构包括形成在没有帽材料的平坦化介电层的沟槽中的导电材料。 该结构还包括形成在导电材料上以防止迁移的盖材料。 形成结构的方法包括在电介质材料上选择性地沉积牺牲材料，并在介电材料的沟槽内的导电层上提供金属覆盖层。 该方法还包括用其上的任何不需要的沉积或有核的金属覆盖层去除牺牲材料。

    Interconnect structure and method of making same
    4.
    发明授权
    Interconnect structure and method of making same 有权
    互连结构及其制作方法

    公开(公告)号：US08772933B2

    公开(公告)日：2014-07-08

    申请号：US11954812

    申请日：2007-12-12

    申请人： Ya Ou ,  Shom Ponoth ,  Terry A. Spooner

    发明人： Ya Ou ,  Shom Ponoth ,  Terry A. Spooner

    IPC分类号： H01L23/48

    CPC分类号： C23F4/00 ,  H01L21/76805 ,  H01L21/76829 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53204 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

    摘要翻译： 提供了互连结构及其制造方法。 更具体地，互连结构是无缺陷的封装互连结构。 该结构包括形成在没有帽材料的平坦化介电层的沟槽中的导电材料。 该结构还包括形成在导电材料上以防止迁移的盖材料。 形成结构的方法包括在电介质材料上选择性地沉积牺牲材料，并在介电材料的沟槽内的导电层上提供金属覆盖层。 该方法还包括用其上的任何不需要的沉积或有核的金属覆盖层去除牺牲材料。

    INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME
    5.
    发明申请
    INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME 有权
    互连结构及其制作方法

    公开(公告)号：US20120171862A1

    公开(公告)日：2012-07-05

    申请号：US13415159

    申请日：2012-03-08

    申请人： Ya Ou ,  Shom Ponoth ,  Terry A. Spooner

    发明人： Ya Ou ,  Shom Ponoth ,  Terry A. Spooner

    IPC分类号： H01L21/768

    CPC分类号： C23F4/00 ,  H01L21/76805 ,  H01L21/76829 ,  H01L21/76849 ,  H01L23/5226 ,  H01L23/53204 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

    摘要翻译： 提供了互连结构及其制造方法。 更具体地，互连结构是无缺陷的封装互连结构。 该结构包括形成在没有帽材料的平坦化介电层的沟槽中的导电材料。 该结构还包括形成在导电材料上以防止迁移的盖材料。 形成结构的方法包括在电介质材料上选择性地沉积牺牲材料，并在介电材料的沟槽内的导电层上提供金属覆盖层。 该方法还包括用其上的任何不需要的沉积或有核的金属覆盖层去除牺牲材料。

    Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement
    10.
    发明授权
    Plating seed layer including an oxygen/nitrogen transition region for barrier enhancement 有权
    电镀种子层包括用于屏障增强的氧/氮过渡区域

    公开(公告)号：US08003524B2

    公开(公告)日：2011-08-23

    申请号：US12177309

    申请日：2008-07-22

    申请人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

    发明人： Chih-Chao Yang ,  Simon Gaudet ,  Christian Lavoie ,  Shom Ponoth ,  Terry A. Spooner

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An interconnect structure which includes a plating seed layer that has enhanced conductive material, preferably, Cu, diffusion properties is provided that eliminates the need for utilizing separate diffusion and seed layers. Specifically, the present invention provides an oxygen/nitrogen transition region within a plating seed layer for interconnect metal diffusion enhancement. The plating seed layer may include Ru, Ir or alloys thereof, and the interconnect conductive material may include Cu, Al, AlCu, W, Ag, Au and the like. Preferably, the interconnect conductive material is Cu or AlCu. In more specific terms, the present invention provides a single seeding layer which includes an oxygen/nitrogen transition region sandwiched between top and bottom seed regions. The presence of the oxygen/nitrogen transition region within the plating seed layer dramatically enhances the diffusion barrier resistance of the plating seed.

    摘要翻译： 提供一种互连结构，其包括具有增强的导电材料，优选Cu扩散性质的电镀种子层，其不需要使用单独的扩散和种子层。 具体地说，本发明提供了用于互连金属扩散增强的电镀种子层内的氧/氮过渡区域。 电镀种子层可以包括Ru，Ir或其合金，并且互连导电材料可以包括Cu，Al，AlCu，W，Ag，Au等。 优选地，互连导电材料是Cu或AlCu。 在更具体的术语中，本发明提供了单个接种层，其包括夹在顶部和底部种子区域之间的氧/氮过渡区域。 电镀种子层内的氧/氮过渡区的存在显着提高了电镀种子的扩散阻挡性。