公开(公告)号：US20050285269A1

公开(公告)日：2005-12-29

申请号：US10881778

申请日：2004-06-29

申请人： Yang Cao ,  Robert Wu ,  Yue Ma ,  Chia-Hong Jan ,  Vinay Chikarmane ,  Rajiv Rastogi

发明人： Yang Cao ,  Robert Wu ,  Yue Ma ,  Chia-Hong Jan ,  Vinay Chikarmane ,  Rajiv Rastogi

IPC分类号： H01L21/425 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76877 ,  H01L2924/0002 ,  H01L2924/00

摘要： A die is provided with an insulation layer and an interconnect. The interconnect has been recrystallized to reduce void content.

摘要翻译： 模具设置有绝缘层和互连。 互连已经重结晶以减少空隙含量。

公开(公告)号：US20060091018A1

公开(公告)日：2006-05-04

申请号：US11292609

申请日：2005-12-01

申请人： Yang Cao ,  Vinay Chikarmane ,  Rajiv Rastogi ,  Daniel Zierath

发明人： Yang Cao ,  Vinay Chikarmane ,  Rajiv Rastogi ,  Daniel Zierath

IPC分类号： C25D15/00 ,  C25D5/00

CPC分类号： H01L21/2885 ,  C25D5/18

摘要： Embodiments of the invention provide methods for electroplating a substrate that substantially reduce or eliminate protrusions and decrease WID thickness variations. The number of protrusions formed on the plating surface is highly dependent upon the electroplating current density. Embodiments of the invention vary the electroplating current waveform by implementing an initial current step sufficient to fill substrate features and a terminal current step sufficient to achieve the specified plating thickness while suppressing protrusions and within die thickness variations.

摘要翻译： 本发明的实施例提供了用于电镀基板的方法，其基本上减少或消除突起并减小WID厚度变化。 形成在电镀表面上的突起的数量高度取决于电镀电流密度。 本发明的实施例通过实施足以填充基板特征的初始电流步骤和足以在抑制突起和模具厚度变化的同时实现特定电镀厚度的端电流步骤来改变电镀电流波形。

公开(公告)号：US20080142363A1

公开(公告)日：2008-06-19

申请号：US12012656

申请日：2008-02-04

申请人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

发明人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

IPC分类号： G01N27/416

CPC分类号： C25D21/12 ,  H01L22/34

摘要： A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage.

摘要翻译： 描述了使用电池电压和/或电流作为监视器以防止电化学沉积（例如，电镀）工具从而使没有或不良金属（例如Cu）种子覆盖的晶片脱落的方法和装置。

公开(公告)号：US07371312B2

公开(公告)日：2008-05-13

申请号：US10816495

申请日：2004-03-31

申请人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

发明人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

IPC分类号： C25D21/12

CPC分类号： C25D21/12 ,  H01L22/34

摘要： A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage. In one embodiment, the voltage of a plating cell including a reference wafer which has substantially complete Cu seed coverage is measured. A reference resistance of the plating cell with the reference wafer is determined. The voltage of the plating cell including a calibration wafer which has no or insufficient seed coverage at its edge is measured. A calibration resistance of the plating cell with the calibration wafer is determined. An error trigger based on a comparison of the reference resistance with the calibration resistance is selected.

摘要翻译： 描述了使用电池电压和/或电流作为监测器以防止电化学沉积（例如，电镀）工具从而剥离没有或不良金属（例如Cu）种子覆盖的晶片的方法和装置。 在一个实施例中，测量包括具有基本上完全Cu种子覆盖的参考晶片的电镀单元的电压。 确定具有参考晶片的电镀单元的参考电阻。 测量包括在其边缘处没有或不足的种子覆盖的校准晶片的电镀单元的电压。 确定具有校准晶片的电镀单元的校准电阻。 选择基于参考电阻与校准电阻的比较的误差触发。

公开(公告)号：US20050227381A1

公开(公告)日：2005-10-13

申请号：US10816495

申请日：2004-03-31

申请人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

发明人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

IPC分类号： C25D21/12 ,  H01L21/44 ,  H01L21/66 ,  H01L23/544

CPC分类号： C25D21/12 ,  H01L22/34

摘要： A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage.

摘要翻译： 描述了使用电池电压和/或电流作为监测器以防止电化学沉积（例如，电镀）工具从而剥离没有或不良金属（例如Cu）种子覆盖的晶片的方法和装置。

公开(公告)号：US07985328B2

公开(公告)日：2011-07-26

申请号：US12012656

申请日：2008-02-04

申请人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

发明人： Yang Cao ,  Yue Ma ,  Jir-shyr Chen ,  Rajiv Rastogi

IPC分类号： G01N27/27

CPC分类号： C25D21/12 ,  H01L22/34

摘要： A method and apparatus are described that use cell voltage and/or current as monitor to prevent electrochemical deposition (e.g., electroplating) tools from deplating wafers with no or poor metal (e.g., Cu) seed coverage.

摘要翻译： 描述了使用电池电压和/或电流作为监测器以防止电化学沉积（例如，电镀）工具从而剥离没有或不良金属（例如Cu）种子覆盖的晶片的方法和装置。

公开(公告)号：US07438794B2

公开(公告)日：2008-10-21

申请号：US10956282

申请日：2004-09-30

申请人： David Jentz ,  Ramesh Viswanathan ,  Paul McGregor ,  Valery Dubin ,  Rajiv Rastogi

发明人： David Jentz ,  Ramesh Viswanathan ,  Paul McGregor ,  Valery Dubin ,  Rajiv Rastogi

IPC分类号： C25D3/38 ,  C25D5/00 ,  C25D7/12

CPC分类号： H01L21/76877 ,  C25D3/38 ,  C25D5/18 ,  C25D7/123 ,  H01L21/2885

摘要： A copper electroplating bath composition and a method of copper electroplating to improve gapfill are provided. The method of electroplating includes providing an aqueous electroplating composition, comprising copper, at least one acid, at least one halogen ion, an additive including an accelerating agent, a suppressing agent, and a suppressing-accelerating agent, and the solution and mixture products thereof; contacting a substrate with the plating composition; and impressing a multi-step waveform potential upon the substrate, wherein the multi-step waveform potential includes an entry step, wherein the entry step includes a first sub-step applying a first current and a second sub-step applying second current, the second current being greater than the first current. The accelerating agent is provided in concentration of greater than 1.5 ml/liter, the suppressing agent is provided in concentration of greater than 15 ml/liter, and the accelerating-suppressing agent is provided in concentration of greater than 10 ml/liter.

摘要翻译： 提供铜电镀浴组合物和镀铜方法以改善间隙填充。 电镀方法包括提供包含铜，至少一种酸，至少一种卤素离子，包含促进剂，抑制剂和抑制促进剂的添加剂的含水电镀组合物及其溶液和混合物产物 ; 使基板与电镀组合物接触; 并且在所述基板上施加多步波形电位，其中所述多步波形电位包括入口步骤，其中所述入口步骤包括施加施加第二电流的第一电流和第二子步骤的第一子步骤，所述第二子步骤 电流大于第一电流。 以大于1.5ml /升的浓度提供促进剂，以大于15ml /升的浓度提供抑制剂，并且以大于10ml /升的浓度提供促进抑制剂。

公开(公告)号：US5747879A

公开(公告)日：1998-05-05

申请号：US672413

申请日：1996-06-28

申请人： Rajiv Rastogi ,  Sandra J. Underwood ,  Harry H. Fujimoto

发明人： Rajiv Rastogi ,  Sandra J. Underwood ,  Harry H. Fujimoto

IPC分类号： H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L23/48 ,  H01L29/12 ,  H01L29/40

CPC分类号： H01L21/2855 ,  H01L21/76838 ,  H01L21/76841 ,  H01L21/7685 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  Y10S257/915

摘要： An improvement in a metal stack used for interconnecting structures in an integrated circuit. The improvement comprises the entrapping in a titanium layer of nitrogen at the interface where the titanium layer contacts a bulk conductor layer such as an aluminum-copper alloy layer. The entrapped nitrogen prevents the formation of any substantial amount of titanium aluminide thereby reducing current densities and also improving the electromigration properties of the stack. As currently preferred, the nitrogen is entrapped in approximately the first 30.ANG. of the titanium layer.

摘要翻译： 用于集成电路中互连结构的金属堆叠的改进。 该改进包括在钛层接触诸如铝 - 铜合金层的体导体层的界面处在氮钛层中截留。 夹带的氮防止形成任何相当量的铝化钛，从而降低电流密度，并且还改善了叠层的电迁移性能。 目前优选的是，氮被截留在钛层的大约前30个角度。

公开(公告)号：US5286678A

公开(公告)日：1994-02-15

申请号：US951945

申请日：1992-09-28

申请人： Rajiv Rastogi

发明人： Rajiv Rastogi

IPC分类号： H01L21/285 ,  H01L21/28

CPC分类号： H01L21/28518

摘要： The present invention generally involves the fabrication of semiconductor devices so as to reduce the active region to interconnect interface resistivity. Fabrication begins by forming active regions on a semiconductor device. Next, a titanium metal of approximately 900 .ANG. thickness is deposited on the semiconductor device. The semiconductor device is then annealed in a single step to form the interconnects.

摘要翻译： 本发明通常涉及半导体器件的制造，以便将有源区域减小到互连界面电阻率。 通过在半导体器件上形成有源区开始制造。 接下来，在半导体器件上沉积约900（Aangstroem）厚度的钛金属。 然后半导体器件在单个步骤中退火以形成互连。

公开(公告)号：US20060065536A1

公开(公告)日：2006-03-30

申请号：US10956282

申请日：2004-09-30

申请人： David Jentz ,  Ramesh Viswanathan ,  Paul McGregor ,  Valery Dubin ,  Rajiv Rastogi

发明人： David Jentz ,  Ramesh Viswanathan ,  Paul McGregor ,  Valery Dubin ,  Rajiv Rastogi

IPC分类号： C25D3/00 ,  C25D3/38

CPC分类号： H01L21/76877 ,  C25D3/38 ,  C25D5/18 ,  C25D7/123 ,  H01L21/2885

摘要： A copper electroplating bath composition and a method of copper electroplating to improve gapfill are provided. The method of electroplating includes providing an aqueous electroplating composition, comprising copper, at least one acid, at least one halogen ion, an additive including an accelerating agent, a suppressing agent, and a suppressing-accelerating agent, and the solution and mixture products thereof; contacting a substrate with the plating composition; and impressing a multi-step waveform potential upon the substrate, wherein the multi-step waveform potential includes an entry step, wherein the entry step includes a first sub-step applying a first current and a second sub-step applying second current, the second current being greater than the first current. The accelerating agent is provided in concentration of greater than 1.5 ml/liter, the suppressing agent is provided in concentration of greater than 15 ml/liter, and the accelerating-suppressing agent is provided in concentration of greater than 10 ml/liter.

摘要翻译： 提供铜电镀浴组合物和镀铜方法以改善间隙填充。 电镀方法包括提供包含铜，至少一种酸，至少一种卤素离子，包含促进剂，抑制剂和抑制促进剂的添加剂的含水电镀组合物及其溶液和混合物产物 ; 使基板与电镀组合物接触; 并且在所述基板上施加多步波形电位，其中所述多步波形电位包括入口步骤，其中所述入口步骤包括施加施加第二电流的第一电流和第二子步骤的第一子步骤，所述第二子步骤 电流大于第一电流。 以大于1.5ml /升的浓度提供促进剂，以大于15ml /升的浓度提供抑制剂，并且以大于10ml /升的浓度提供促进抑制剂。