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11 条记录 (耗时 0.02 秒)

    Ultrasonic motor
    1.
    发明授权
    Ultrasonic motor 失效
    超声波电机

    公开(公告)号：US5172023A

    公开(公告)日：1992-12-15

    申请号：US771766

    申请日：1991-10-04

    申请人： Yasuaki Kawai ,  Akihiro Takeuchi ,  Kiyokazu Asai

    发明人： Yasuaki Kawai ,  Akihiro Takeuchi ,  Kiyokazu Asai

    IPC分类号： H01L41/09 ,  H02N2/16

    CPC分类号： H02N2/163

    摘要： An ultrasonic motor which has a viration mode of progressive wave with a large vibrational amplitude of an elastic member and which provides a high torque, comprises: at least one vibrator including a disk-shaped elastic member having a driving force transmitting portion, disk-shaped piezoelectric ceramics attached to both surfaces of the elastic member and a plurality of projections provided on both sides of the driving force transmitting portion; and at least one rotor that is in press contact with the driving force transmitting portion of the vibrator. The thickness of the elastic member at a portion between the piezoelectric ceramics is substantially equal to the thickness thereof at the driving force transmitting portion.

    摘要翻译： 一种超声波马达，其具有弹性构件的振动幅度大的逐行波纹理模式，提供高扭矩的超声波马达包括：至少一个振动器，包括具有驱动力传递部分的盘形弹性构件，盘形 附着在弹性构件的两个表面上的压电陶瓷和设置在驱动力传递部两侧的多个突起; 以及与振动器的驱动力传递部压接的至少一个转子。 在压电陶瓷之间的部分处的弹性构件的厚度基本上等于驱动力传递部分的厚度。

    Hydrogen storage material and hydrogen storage apparatus
    2.
    发明授权
    Hydrogen storage material and hydrogen storage apparatus 失效
    储氢材料及储氢装置

    公开(公告)号：US07094276B2

    公开(公告)日：2006-08-22

    申请号：US10255955

    申请日：2002-09-27

    申请人： Yoshitsugu Kojima ,  Yasuaki Kawai

    发明人： Yoshitsugu Kojima ,  Yasuaki Kawai

    IPC分类号： C01B3/00 ,  B01J20/20 ,  F17C11/00

    CPC分类号： B82Y30/00 ,  B01J20/02 ,  B01J20/20 ,  B01J20/2803 ,  B01J20/28057 ,  B01J20/2808 ,  B01J2220/42 ,  C01B3/0021 ,  Y02E60/325 ,  Y10S420/90 ,  Y10S502/526

    摘要： The present invention involves a carbon-based hydrogen storage material which includes a carbon material, exhibiting a specific surface area, being 1,000 m2/g or more, and a bulk density, being from 0.4 g/cm3 or more to 1 g/cm3 or less. The carbon-based hydrogen storage material is such that the hydrogen storage capacity per unit volume is large. The invention also provides for a hydrogen storage apparatus whose hydrogen storage capacity per unit volume is large. The hydrogen storage apparatus is constituted so as to include a container and a hydrogen absorbing material accommodated in the container, and the hydrogen absorbing material is arranged to include a porous carbon material whose specific surface area is 1,000 m2/g or more, and a hydrogen absorbing alloy.

    摘要翻译： 本发明涉及碳基储氢材料，其包含比表面积为1000m 2 / g以上的碳材料，堆积密度为0.4g / cm 3 3以上至1g / cm 3以下。 碳基储氢材料使得每单位体积的储氢容量大。 本发明还提供了每单位体积的氢存储容量大的氢存储装置。 氢存储装置构成为包括容纳在容器中的容器和吸氢材料，吸氢材料配置成包含比表面积为1000μm2以上的多孔碳材料， g以上，以及吸氢合金。

    Method of manufacturing CMOS device with implantation shielding layer
    3.
    发明授权
    Method of manufacturing CMOS device with implantation shielding layer 失效
    制造具有植入屏蔽层的CMOS器件的方法

    公开(公告)号：US06750123B2

    公开(公告)日：2004-06-15

    申请号：US09847288

    申请日：2001-05-03

    申请人： Yasuaki Kawai

    发明人： Yasuaki Kawai

    IPC分类号： H01L21425

    CPC分类号： H01L29/66772 ,  H01L29/78618

    摘要： A shielding layer 23 is selectively formed on a single crystal silicon layer, an active area 25 is formed in the single crystal silicon layer by using the shielding layer 23 as a mask and an impurity layer 26 is formed at the edges at the sides of the active area 25 by using the shielding layer 23 as a mask and implanting an impurity diagonally from above. As a result, since an impurity layer can be formed by implanting ions of the impurity at the edges at the sides of the active area even when the size of the active area is reduced to the absolute limit, the occurrence of the parasitic transistor phenomenon or the edge transistor phenomenon along the edges at the sides of the active area can be prevented.

    摘要翻译： 在单晶硅层上选择性地形成屏蔽层23，通过使用屏蔽层23作为掩模在单晶硅层中形成有源区25，并且在该层的边的边缘处形成杂质层26 通过使用屏蔽层23作为掩模并且从上方对角地注入杂质来生成有源区25。 结果，由于可以通过在有源区的侧面的边缘处注入杂质的离子来形成杂质层，即使当有源区的尺寸减小到绝对极限时，发生寄生晶体管现象或 可以防止沿着有效区域的边缘的边缘的边缘晶体管现象。

    Optical sensing device including visible and UV sensors
    5.
    发明授权
    Optical sensing device including visible and UV sensors 有权
    光学感测装置包括可见光和紫外线传感器

    公开(公告)号：US08294231B2

    公开(公告)日：2012-10-23

    申请号：US12407805

    申请日：2009-03-20

    申请人： Yasuaki Kawai

    发明人： Yasuaki Kawai

    IPC分类号： H01L31/00

    CPC分类号： H01L31/03529 ,  G01J1/4228 ,  G01J1/429 ,  H01L27/14609 ,  H01L27/14647 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/547

    摘要： An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.

    摘要翻译： 光学传感器件包括绝缘体上硅（SOI）衬底，半导体支撑衬底，位于半导体支撑衬底上的绝缘层和位于绝缘层上的半导体层。 光学传感装置还包括位于半导体支撑衬底中的可见光传感器和位于半导体层中的紫外线传感器。

    OPTICAL SENSING DEVICE INCLUDING VISIBLE AND UV SENSORS
    7.
    发明申请
    OPTICAL SENSING DEVICE INCLUDING VISIBLE AND UV SENSORS 有权
    包括可见和紫外线传感器的光学感应装置

    公开(公告)号：US20090243019A1

    公开(公告)日：2009-10-01

    申请号：US12407805

    申请日：2009-03-20

    申请人： Yasuaki Kawai

    发明人： Yasuaki Kawai

    IPC分类号： H01L31/02 ,  H01L31/0352

    CPC分类号： H01L31/03529 ,  G01J1/4228 ,  G01J1/429 ,  H01L27/14609 ,  H01L27/14647 ,  H01L31/028 ,  H01L31/103 ,  Y02E10/547

    摘要： An optical sensing device includes a silicon-on-insulator (SOI) substrate a semiconductor support substrate, an insulating layer located on the semiconductor support substrate, and a semiconductor layer located on the insulating layer. The optical sensing device further includes a visible light sensor located in the semiconductor support substrate, and an ultraviolet ray sensor located in the semiconductor layer.

    摘要翻译： 光学传感器件包括绝缘体上硅（SOI）衬底，半导体支撑衬底，位于半导体支撑衬底上的绝缘层和位于绝缘层上的半导体层。 光学传感装置还包括位于半导体支撑衬底中的可见光传感器和位于半导体层中的紫外线传感器。

    Energy gas producing process and energy gas storage material
    10.
    发明申请
    Energy gas producing process and energy gas storage material 审中-公开
    能源气生产过程和能源储气材料

    公开(公告)号：US20100050519A1

    公开(公告)日：2010-03-04

    申请号：US12461729

    申请日：2009-08-21

    申请人： Yasuaki Kawai ,  Mitsuru Matsumoto ,  Shinichi Towata ,  Yoshiaki Fukushima ,  Qiwu Zhang ,  Fumio Saito

    发明人： Yasuaki Kawai ,  Mitsuru Matsumoto ,  Shinichi Towata ,  Yoshiaki Fukushima ,  Qiwu Zhang ,  Fumio Saito

    IPC分类号： C01B3/02

    CPC分类号： C01B3/02 ,  C01B3/32 ,  C10L3/08 ,  F17C11/00 ,  Y02E50/30 ,  Y02E60/321

    摘要： There is provided a process for producing an energy gas at a lower temperature and in a larger amount, as well as an energy gas storage material capable of easily taking out the energy gas. A process for producing an energy gas including a MG processing step of co-grinding a mixture of a carbon-, hydrogen-, and oxygen-containing compound, an alkali metal or compound thereof, and an alkaline earth metal or a compound thereof, thereby obtaining a MG processing product and a heating step of heating the MG processing product in an inert atmosphere, as well as an energy storage material obtained by the MG processing described above. The MG processing step preferably including adding a transition metal or a compound thereof to the mixture and co-grinding the mixture.

    摘要翻译： 提供了一种在较低温度和较大量下生产能量气体的方法，以及能够容易地取出能量气体的能量气体储存材料。 一种能量气体的制造方法，其特征在于，包括：通过共混研磨含有碳，氢和氧的化合物，碱金属或其化合物，碱土金属或其化合物的混合物的MG处理工序，由此 获得MG处理产品和在惰性气氛中加热MG处理产品的加热步骤，以及通过上述MG处理获得的储能材料。 MG加工步骤优选包括向混合物中加入过渡金属或其化合物并共混研磨该混合物。