摘要:
A method for controlling a structure of a nano-scale substance may include irradiating a mixture of low-dimensional quantum structures having a nano-scale with an electromagnetic wave in an oxygen atmosphere, to thereby selectively oxidize a low-dimensional quantum structure having a density of states resonating with the electromagnetic wave used for the irradiation. The method allows a low-dimensional quantum structure having a specific structure to be selectively removed from the mixture of low-dimensional quantum structures having a nano-scale.
摘要:
A method for controlling a structure of a nano-scale substance, which comprises irradiating a mixture of low-dimensional quantum structures having a nano-scale with an electromagnetic wave in an oxygen atmosphere, to thereby selectively oxidize a low-dimensional quantum structure having a density of states resonating with the electromagnetic wave used for the irradiation. The method allows a low-dimensional quantum structure having a specific structure to be selectively disappeared from the mixture of low-dimensional quantum structures having a nano-scale.
摘要:
A composite lead frame comprising a lead frame (10), leads (28) supported on a plastic film (22 ') having a device hole (24), and a metal (14, 32) for mounting a semiconductor chip (34) is disclosed. The lead frame (10) has a plurality of inner lead portions (12) each of which is bonded to each of the leads (28), respectively. The metal (14, 32) also supports the leads (28) through the plastic film (22'). The metal (14, 32) may be bonded to the lead frame (10) through an adhesive tape (16), or may be integrated with the lead frame (10). Bonding wires (36) to connect the leads (28) and the semiconductor chip (34) can be easily and securely bonded to the leads (28) in virtue of the metal (14, 32) supporting the leads (28). Additionally, a semiconductor device incorporating the composite lead frame has efficient heat dissipation and reliability by virtue of the metal pad.
摘要:
[Object] To facilitate bonding of articles at a low temperature without degrading electrical contact between the articles.[Means to Realize Object] An oxide film reducing treatment with hydrogen radicals is carried out for surfaces of lead-out electrodes (5) and bump electrodes (6) on the lead-out electrodes (5) of a semiconductor chip (2) and surfaces of lead-out electrodes (8) of an intermediate substrate (3), and, after that, the bump electrodes (6) of the semiconductor chip (2) and the lead-out electrodes (8) of the intermediate substrate (3) are aligned with each other. After that, a pressure is applied to bond the bump electrodes (6) and the lead-out electrodes (8).
摘要:
A method of an embodiment of the present of the present application is for producing a nano-scale low dimensional quantum structure. The method includes: bringing a catalyst on a substrate into contact with vaporized carbon source, and emitting an electromagnetic wave to the catalyst so as to form single-walled carbon nano-tubes on the catalyst. As a result, it is possible to form the nano-scale low-dimensional quantum structure on a target area.
摘要:
A method of producing soft fine metal spheres for semiconductor packaging from a material selected from soft metals and soft alloys. A plurality of fine wires made of the material are arranged in parallel on a flat base plate. Each of the wires has a diameter of not more than 100 .mu.m. The fine wires are cut into wire chips having an equal mass relative to each other and a chip length/chip diameter ratio between 5 and 100 by utilizing a cutting jig having cutting edges which are arranged at a constant pitch. The resulting wire chips are arranged so that the chips are spaced apart a minimum distance sufficient to prevent the chips from merging when melted. The resulting spaced-apart wire chips are heated to a temperature up to but not exceeding 100.degree. C. above the melting point thereof, thereby forming the chips into molten spheres. The resulting molten spheres are cooled, thereby forming solid spheres having a diameter within about 5% of a desired diameter.
摘要:
A method for controlling a structure of a nano-scale substance, which comprises irradiating a mixture of low-dimensional quantum structures having a nano-scale with an electromagnetic wave in an oxygen atmosphere, to thereby selectively oxidize a low-dimensional quantum structure having a density of states resonating with the electromagnetic wave used for the irradiation. The method allows a low-dimensional quantum structure having a specific structure to be selectively disappeared from the mixture of low-dimensional quantum structures having a nano-scale.
摘要:
This invention provides a thin gold-alloy wire for a semiconductor device capable of improving long term reliability of bonding with an electrode and capable of simultaneously accomplishing reduction of a wire bend and wire flow at the time of resin molding and high looping.The thin gold-alloy wire contains 50 to 3000 ppm by weight of Mn and the balance comprising gold and unavoidable impurities. Further, the thin gold-alloy wire comprises any of the following combinations 1, 2, 1+2, 2+3 and 1+2+3 when element groups to be added are classified into the following groups 1 to 3:1 1 to 20 ppm by weight in total of at least one of Be and B;2 1 to 30 ppm by weight in total of at least one of Ca, Sr and rare earth elements; and3 1 to 50 ppm by weight in total of at least oneof In and Tl.The thin gold-alloy wire according to the present invention has high bonding reliability at the bond portion with the electrode on a semiconductor device and can be packaged with high density semiconductor devices.
摘要翻译:本发明提供一种用于半导体器件的薄金合金线,其能够提高与电极的接合的长期可靠性,并且能够同时实现树脂成型时的线弯曲和线流动的降低以及高循环。 薄金合金线含有50〜3000重量ppm的Mn,余量由金和不可避免的杂质构成。 此外,薄金合金线包括以下组合+ E,crc 1 + EE,+ E,crc 2 + EE,+ E,crc 1 + EE ++ E,crc 2 + EE,+ E,crc 2 + EE ++ E,crc 3 + EE和+ E,crc 1 + EE ++ E,crc 2 + EE ++ E,crc 3 + EE当要添加的元素组分为以下组+ E, Crc 1 + EE至+ E,crc 3 + EE:+ E,crc 1 + EE 1至20重量ppm的Be和B中的至少一个; + E,crc 2 + EE 1〜30重量ppm的Ca,Sr和稀土元素中的至少一种; 和+ E,crc 3 + EE 1至50重量ppm的In和T1中的至少一个。 根据本发明的薄金合金线在与半导体器件上的电极的键合部分处具有高的结合可靠性,并且可以与高密度半导体器件封装。
摘要:
Production of boron-containing steel slabs free from surface defects by continuous casting, particularly prevention of the slab surface crackings by cooling the slab with a specific cooling rate through the temperature range from the melting point to 900.degree. C. so as to prevent boron-containing compounds such as BN from precipitating along the austenite grain boundary. Great advantage over the conventional art is that boron-containing molten steels which could not be continuously cast can be successfully continuously cast into slabs free from surface defects.
摘要:
A method for controlling a structure of a nano-scale substance may include irradiating a mixture of low-dimensional quantum structures having a nano-scale with an electromagnetic wave in an oxygen atmosphere, to thereby selectively oxidize a low-dimensional quantum structure having a density of states resonating with the electromagnetic wave used for the irradiation. The method allows a low-dimensional quantum structure having a specific structure to be selectively removed from the mixture of low-dimensional quantum structures having a nano-scale.