Composite lead frame and semiconductor device using the same
    3.
    发明授权
    Composite lead frame and semiconductor device using the same 失效
    复合引线框架和使用其的半导体器件

    公开(公告)号:US5227662A

    公开(公告)日:1993-07-13

    申请号:US959474

    申请日:1992-10-09

    IPC分类号: H01L23/495

    摘要: A composite lead frame comprising a lead frame (10), leads (28) supported on a plastic film (22 ') having a device hole (24), and a metal (14, 32) for mounting a semiconductor chip (34) is disclosed. The lead frame (10) has a plurality of inner lead portions (12) each of which is bonded to each of the leads (28), respectively. The metal (14, 32) also supports the leads (28) through the plastic film (22'). The metal (14, 32) may be bonded to the lead frame (10) through an adhesive tape (16), or may be integrated with the lead frame (10). Bonding wires (36) to connect the leads (28) and the semiconductor chip (34) can be easily and securely bonded to the leads (28) in virtue of the metal (14, 32) supporting the leads (28). Additionally, a semiconductor device incorporating the composite lead frame has efficient heat dissipation and reliability by virtue of the metal pad.

    摘要翻译: 一种复合引线框架,包括引线框架(10),支撑在具有器件孔(24)的塑料膜(22')上的引线(28)和用于安装半导体芯片(34)的金属(14,32) 披露 引线框架(10)具有分别结合到每个引线(28)的多个内引线部分(12)。 金属(14,32)还通过塑料膜(22')支撑引线(28)。 金属(14,32)可以通过粘合带(16)结合到引线框架(10),或者可以与引线框架(10)成一体。 借助于支撑引线(28)的金属(14,32),用于连接引线(28)和半导体芯片(34)的接合线(36)可以容易且牢固地结合到引线(28)。 此外,结合复合引线框架的半导体器件凭借金属焊盘具有高效的散热和可靠性。

    Method of producing fine metal spheres of uniform size
    6.
    发明授权
    Method of producing fine metal spheres of uniform size 失效
    生产尺寸均匀的细金属球的方法

    公开(公告)号:US5761779A

    公开(公告)日:1998-06-09

    申请号:US596694

    申请日:1996-02-05

    摘要: A method of producing soft fine metal spheres for semiconductor packaging from a material selected from soft metals and soft alloys. A plurality of fine wires made of the material are arranged in parallel on a flat base plate. Each of the wires has a diameter of not more than 100 .mu.m. The fine wires are cut into wire chips having an equal mass relative to each other and a chip length/chip diameter ratio between 5 and 100 by utilizing a cutting jig having cutting edges which are arranged at a constant pitch. The resulting wire chips are arranged so that the chips are spaced apart a minimum distance sufficient to prevent the chips from merging when melted. The resulting spaced-apart wire chips are heated to a temperature up to but not exceeding 100.degree. C. above the melting point thereof, thereby forming the chips into molten spheres. The resulting molten spheres are cooled, thereby forming solid spheres having a diameter within about 5% of a desired diameter.

    摘要翻译: 从软质金属和软质合金中选择的材料生产用于半导体封装的软质金属球的方法。 由该材料制成的多根细线平行布置在平坦的基板上。 每条线的直径不超过100米。 通过使用具有以恒定间距排列的切削刃的切割夹具,将细线切成相对于彼此质量相等的切屑长度/切屑直径比在5和100之间的切屑。 所得到的线芯片被布置成使得芯片间隔开足够的最小距离,以防止芯片在熔化时融合。 将所产生的间隔开的线芯片加热至高于其熔点以上但不超过100℃的温度,从而将芯片形成熔融球体。 将所得熔融球体冷却,从而形成直径在所需直径的约5%内的固体球体。

    Prevention of cracking of continuously cast steel slabs containing boron
    9.
    发明授权
    Prevention of cracking of continuously cast steel slabs containing boron 失效
    防止连续铸造含硼钢板的裂纹

    公开(公告)号:US4379482A

    公开(公告)日:1983-04-12

    申请号:US212335

    申请日:1980-12-02

    IPC分类号: B22D11/124 C21D6/00 B22D11/16

    CPC分类号: B22D11/124

    摘要: Production of boron-containing steel slabs free from surface defects by continuous casting, particularly prevention of the slab surface crackings by cooling the slab with a specific cooling rate through the temperature range from the melting point to 900.degree. C. so as to prevent boron-containing compounds such as BN from precipitating along the austenite grain boundary. Great advantage over the conventional art is that boron-containing molten steels which could not be continuously cast can be successfully continuously cast into slabs free from surface defects.

    摘要翻译: 通过连续铸造生产没有表面缺陷的含硼钢板,特别是通过在熔点至900℃的温度范围内以比冷却速度冷却板坯来防止板坯表面开裂,以防止硼 - 含氮化合物如BN沿奥氏体晶界析出。 与传统技术相比,优点是不能连续铸造的含硼熔融钢可以连续铸造成没有表面缺陷的板坯。