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    Semiconductor device that enables simultaneous read and write/read operation
    1.
    发明授权
    Semiconductor device that enables simultaneous read and write/read operation 有权
    实现同时读/写操作的半导体器件

    公开(公告)号：US07345919B2

    公开(公告)日：2008-03-18

    申请号：US11453830

    申请日：2006-06-16

    申请人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    发明人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    IPC分类号： G11C16/04

    CPC分类号： G11C8/12 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/22

    摘要： A semiconductor device includes a memory cell array including a plurality of cores, each of said cores including one block or a plurality of blocks. The semiconductor device further includes a first power supply line which is provided commonly for said plurality of cores and which provides a data reading power supply potential; a second power supply line which is provided commonly for said plurality of cores and which provides a data writing or erasing power supply potential; and a power supply line switching circuit which is provided for each of said plurality of cores and which selectively connects a corresponding one of said plurality of cores to said first power supply line or said second power supply line in accordance with whether said corresponding one of said plurality of cores is in a data read mode or a data write or erase mode.

    摘要翻译： 半导体器件包括包括多个核的存储单元阵列，每个所述核包括一个块或多个块。 所述半导体器件还包括第一电源线，所述第一电源线通常为所述多个芯提供，并提供数据读取电源电位; 第二电源线，其为所述多个核心共同提供，并且提供数据写入或擦除电源电位; 以及电源线切换电路，其被设置用于所述多个芯中的每一个，并且根据所述多个核中的所述相应一个选择性地将所述多个核中的相应一个核连接到所述第一电源线或所述第二电源线 多个核心处于数据读取模式或数据写入或擦除模式。

    Semiconductor device that enables simultaneous read and write/erase operation
    2.
    发明授权
    Semiconductor device that enables simultaneous read and write/erase operation 有权
    实现同时读/写/擦除操作的半导体器件

    公开(公告)号：US06377502B1

    公开(公告)日：2002-04-23

    申请号：US09563348

    申请日：2000-05-03

    申请人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    发明人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    IPC分类号： G11C800

    CPC分类号： G11C8/12 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/22

    摘要： A memory cell array 1 has the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. A core selecting part for selecting an optional number of cores to write/erase data is provided for writing data in memory cells in cores selected on the basis of a write command and for erasing data from selected blocks in cores selected on the basis of an erase command. Thus, there is realized a free core system capable of reading data out from memory cells in unselected cores while writing/erasing data in cores selected by the core selecting part.

    摘要翻译： 存储单元阵列1具有多个核心的布置，每个核心包括一个块或一组多个块，每个块定义用作数据擦除单位的存储单元的范围。 提供用于选择写入/擦除数据的可选数量的核心的核心选择部分，用于将数据写入基于写入命令选择的核心的存储器单元中，并且用于从基于擦除选择的核心中的所选择的块中擦除数据 命令。 因此，实现了一种自由核心系统，其能够在由核心选择部分选择的核心中写入/擦除数据时，从未选择的核心中的存储器单元读出数据。

    Semiconductor device that enables simultaneous read and write/read operation
    3.
    发明申请
    Semiconductor device that enables simultaneous read and write/read operation 有权
    实现同时读/写操作的半导体器件

    公开(公告)号：US20060256616A1

    公开(公告)日：2006-11-16

    申请号：US11453830

    申请日：2006-06-16

    申请人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    发明人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    IPC分类号： G11C16/04

    CPC分类号： G11C8/12 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/22

    摘要： A semiconductor device includes a memory cell array including a plurality of cores, each of said cores including one block or a plurality of blocks. The semiconductor device further includes a first power supply line which is provided commonly for said plurality of cores and which provides a data reading power supply potential; a second power supply line which is provided commonly for said plurality of cores and which provides a data writing or erasing power supple potential; and a power supply line switching circuit which is provided for each of said plurality of cores and which selectively connects a corresponding one of said plurality of cores to said first power supply line or said second power supply line in accordance with whether said corresponding one of said plurality of cores is in a data read mode or a data write or erase mode.

    摘要翻译： 半导体器件包括包括多个核的存储单元阵列，每个所述核包括一个块或多个块。 所述半导体器件还包括第一电源线，所述第一电源线通常为所述多个芯提供，并提供数据读取电源电位; 第二电源线，其为所述多个核心共同提供，并且提供数据写入或擦除功率补偿电位; 以及电源线切换电路，其被设置用于所述多个芯中的每一个，并且根据所述多个核中的所述相应一个选择性地将所述多个核中的相应一个核连接到所述第一电源线或所述第二电源线 多个核心处于数据读取模式或数据写入或擦除模式。

    Semiconductor device that enables simultaneous read and write/read operation
    4.
    发明授权
    Semiconductor device that enables simultaneous read and write/read operation 有权
    实现同时读/写操作的半导体器件

    公开(公告)号：US06829194B2

    公开(公告)日：2004-12-07

    申请号：US10307283

    申请日：2002-12-02

    申请人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    发明人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    IPC分类号： G11C800

    CPC分类号： G11C8/12 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/22

    摘要： A memory cell array 1 has the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. A core selecting part for selecting an optional number of cores to write/erase data is provided for writing data in memory cells in cores selected on the basis of a write command and for erasing data from selected blocks in cores selected on the basis of an erase command. Thus, there is realized a free core system capable of reading data out from memory cells in unselected cores while writing/erasing data in cores selected by the core selecting part.

    摘要翻译： 半导体器件具有存储单元阵列，其具有多个核心的布置，每个核心包括一个块或一组多个块，每个块定义用作数据擦除单位的存储单元范围。半导体 设备具有存储体设置存储器电路，其被配置为选择核心的可选数量的核心作为第一存储体，并且将剩余的核心设置为第二存储体，以便允许数据读取操作在第一存储器 和第二存储体，同时在第一和第二存储体的另一个中进行数据写入或擦除操作。

    Semiconductor device that enables simultaneous read and write/erase operation
    5.
    发明授权
    Semiconductor device that enables simultaneous read and write/erase operation 有权
    实现同时读/写/擦除操作的半导体器件

    公开(公告)号：US06512693B2

    公开(公告)日：2003-01-28

    申请号：US09987981

    申请日：2001-11-16

    申请人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    发明人： Yasuhiko Honda ,  Hideo Kato ,  Hidetoshi Saito ,  Masao Kuriyama ,  Tokumasa Hara ,  Takafumi Ikeda ,  Tatsuya Hiramatsu

    IPC分类号： G11C1604

    CPC分类号： G11C8/12 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/22

    摘要： A semiconductor device has a memory cell array having the arrangement of a plurality of cores, each of which comprises one block or a set of a plurality of blocks, each block defining a range of memory cells serving as a unit of data erase. The semiconductor device has a bank setting memory circuit configured to select an optional number of cores of the cores as a first bank and to set the remaining cores as a second bank, so as to allow a data read operation to be carried out in one of the first and second banks while a data write or erase operation is carried out in the other of the first and second banks.

    摘要翻译： 半导体器件具有存储单元阵列，其具有多个核心的布置，每个核心包括一个块或一组多个块，每个块定义作为数据擦除单位的存储单元的范围。 半导体器件具有存储体设置存储器电路，其被配置为选择核心的可选数量的核心作为第一存储体，并且将剩余的核心设置为第二存储体，以便允许数据读取操作以 在第一和第二组中的另一个中进行数据写入或擦除操作的第一和第二存储体。

    Nonvolatile semiconductor memory device capable of concurrently and reliably writing/erasing and reading memory cores
    9.
    发明授权
    Nonvolatile semiconductor memory device capable of concurrently and reliably writing/erasing and reading memory cores 有权
    能够同时且可靠地写入/擦除和读取存储器核的非易失性半导体存储器件

    公开(公告)号：US06717852B2

    公开(公告)日：2004-04-06

    申请号：US10267693

    申请日：2002-10-10

    申请人： Yasuhiko Honda ,  Hideo Kato ,  Masao Kuriyama ,  Hidetoshi Saito ,  Tokumasa Hara

    发明人： Yasuhiko Honda ,  Hideo Kato ,  Masao Kuriyama ,  Hidetoshi Saito ,  Tokumasa Hara

    IPC分类号： G11C1632

    CPC分类号： G11C16/08 ,  G11C7/1042 ,  G11C16/10 ,  G11C16/26 ,  G11C2216/22

    摘要： A semiconductor memory device, which allows concurrent execution of a write/erase operation and a read operation, is provided for each core with a core busy output circuit which has a function of, at the start, end, suspending or resuming of a write/erase operation, setting the sequence in which a command to write into/erase or read from a core, a core select signal indicating whether or not the core has been selected, and a busy signal indicating that the core is in the write/erase mode are set or reset so that multiple selection of a core in a write/erase operation and a core in a read operation does not occur.

    摘要翻译： 为每个核心提供一个允许并行执行写入/擦除操作和读取操作的半导体存储器件，其具有核心忙输出电路，其具有在开始和结束时挂起或恢复写/ 擦除操作，设置写入/擦除或从内核读取的命令的顺序，指示核心是否被选择的核心选择信号以及指示核心处于写/擦除模式的忙信号 被设置或复位，使得在写入/擦除操作中的核心和读取操作中的核心不会发生多次选择。

    Semiconductor memory device having redundant circuitry for replacing defective memory cell
    10.
    发明授权
    Semiconductor memory device having redundant circuitry for replacing defective memory cell 有权
    具有用于替换有缺陷的存储单元的冗余电路的半导体存储器件

    公开(公告)号：US06532181B2

    公开(公告)日：2003-03-11

    申请号：US09963404

    申请日：2001-09-27

    申请人： Hidetoshi Saito ,  Masao Kuriyama ,  Yasuhiko Honda ,  Hideo Kato

    发明人： Hidetoshi Saito ,  Masao Kuriyama ,  Yasuhiko Honda ,  Hideo Kato

    IPC分类号： G11C700

    CPC分类号： G11C29/78 ,  G11C8/06 ,  G11C16/26 ,  G11C2216/22

    摘要： A nonvolatile semiconductor memory includes a memory cell array and a redundant cell array, and while a data write operation or a data erase operation is carried out in one of banks in the memory cell array, a data read operation can be carried out in the other banks. The redundant cell array has one or more spare blocks and is provided independently of the banks to relieve a defective memory cell of the memory cell array by substituting the spare block for a defective memory block in any of the blocks. The memory block is active when an access block address to be accessed in the memory cell array in the data write or erase operation or the data read operation does not coincide with the defective block address in the defective address storing circuit, whereas the spare block is active when the access block address coincides with the defective block address in the defective address storing circuit.

    摘要翻译： 非易失性半导体存储器包括存储单元阵列和冗余单元阵列，并且在存储单元阵列中的一个存储体中进行数据写入操作或数据擦除操作时，可以在另一个存储单元阵列中执行数据读取操作 银行。 冗余单元阵列具有一个或多个备用块，并且独立于存储体提供，以通过将备用块替换为任何块中的有缺陷的存储块来解除存储单元阵列的有缺陷的存储单元。 当在数据写入或擦除操作或数据读取操作中要存储在存储单元阵列中的访问块地址与缺陷地址存储电路中的有缺陷块地址不一致时，存储块有效，而备用块是 当访问块地址与缺陷地址存储电路中的有缺陷的块地址一致时有效。