公开(公告)号：US08466049B2

公开(公告)日：2013-06-18

申请号：US11921562

申请日：2006-07-25

申请人： Yasuhiro Inokuchi ,  Atsushi Moriya ,  Katsuhiko Yamamoto ,  Yoshiaki Hashiba ,  Takashi Yokogawa

发明人： Yasuhiro Inokuchi ,  Atsushi Moriya ,  Katsuhiko Yamamoto ,  Yoshiaki Hashiba ,  Takashi Yokogawa

IPC分类号： H01L21/20

CPC分类号： C23C16/45523 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

摘要： Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.

摘要翻译： 公开了一种半导体器件的制造方法，包括：将硅衬底装载到处理室中，所述硅衬底在其表面的至少一部分上具有氮化硅膜或氧化硅膜，并且硅表面暴露于 表面 并且交替地重复首先将至少一种硅烷化合物气体引入到所述处理室中，以及第二次引入至少蚀刻气体多次以在所述硅表面上选择性地生长外延膜，其中所述交替重复开始于所述第二引入 在第一次介绍之前。

公开(公告)号：US20080199610A1

公开(公告)日：2008-08-21

申请号：US12071259

申请日：2008-02-19

申请人： Yasuhiro Inokuchi ,  Katsuhiko Yamamoto ,  Atsushi Moriya

发明人： Yasuhiro Inokuchi ,  Katsuhiko Yamamoto ,  Atsushi Moriya

IPC分类号： C23C16/44

CPC分类号： C23C16/54 ,  C23C16/45578 ,  C23C16/4584 ,  H01L21/67109

摘要： To move a substrate mounting part, on which substrates are stacked and mounted, when processing gas is supplied into a processing chamber and processing is applied to a surface of each substrate.

摘要翻译： 为了移动衬底安装部分，在其上堆叠并安装衬底，当处理气体被供应到处理室中并且处理被施加到每个衬底的表面时。

公开(公告)号：US08071477B2

公开(公告)日：2011-12-06

申请号：US12637229

申请日：2009-12-14

申请人： Atsushi Moriya ,  Tetsuya Marubayashi ,  Yasuhiro Inokuchi

发明人： Atsushi Moriya ,  Tetsuya Marubayashi ,  Yasuhiro Inokuchi

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/45578 ,  C23C16/24 ,  C23C16/4401

摘要： Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.

摘要翻译： 在配置在处理室的高温区域的喷嘴的内壁上抑制了硼化合物的形成。 一种半导体器件的制造方法，其特征在于，通过将至少含有作为构成元素的含硼气体和构成元素的含氯气体同时供给到安装在处理室内的气体供给喷嘴，以浓度 的氯（Cl）高于气体供给喷嘴中的硼浓度。

公开(公告)号：US06503079B2

公开(公告)日：2003-01-07

申请号：US10041617

申请日：2002-01-10

申请人： Minoru Kogano ,  Yasuhiro Inokuchi ,  Makoto Sambu ,  Atsushi Moriya ,  Yasuo Kunii

发明人： Minoru Kogano ,  Yasuhiro Inokuchi ,  Makoto Sambu ,  Atsushi Moriya ,  Yasuo Kunii

IPC分类号： F27D312

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/4412 ,  C30B25/14

摘要： An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21. A gas supplying nozzle 4 which is introduced from the flange 7 is extended from the space 21 to the space 20 so that a reaction gas is directly introduced into the space 20 to thereby prevent a contaminant Within the space 21 from being involved in the space 20.

公开(公告)号：US08025739B2

公开(公告)日：2011-09-27

申请号：US12571706

申请日：2009-10-01

申请人： Kiyohisa Ishibashi ,  Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yoshiaki Hashiba

发明人： Kiyohisa Ishibashi ,  Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yoshiaki Hashiba

IPC分类号： B08B7/02

CPC分类号： C23C16/4405 ,  Y10S438/905

摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a method of manufacturing a semiconductor device, comprising: (a) loading a substrate into a process chamber; (b) forming a silicon film or a silicon compound film on the substrate loaded in the process chamber by supplying a raw-material gas to a gas supply pipe disposed in the process chamber to introduce the raw-material gas into the process chamber; (c) unloading the substrate from the process chamber; (d) heating an inside of the process chamber after unloading the substrate to generate a crack in a thin film formed inside the process chamber; (e) decreasing an inside temperature of the process chamber after carrying out the step (d) with the substrate unloaded from the process chamber; and (f) introducing a cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the step (e) with the substrate unloaded from the process chamber.

摘要翻译： 在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。 提供一种制造半导体器件的方法，包括：（a）将衬底装载到处理室中; （b）通过向设置在处理室中的气体供给管供给原料气体，将原料气体引入处理室，在装载在处理室中的基板上形成硅膜或硅化合物膜; （c）从处理室卸载基板; （d）在卸载基板之后加热处理室的内部，以在处理室内形成的薄膜产生裂纹; （e）在从所述处理室卸载的所述基板进行步骤（d）之后降低所述处理室的内部温度; 以及（f）通过在步骤（e）之后通过从处理室卸载基板将清洁气体供给到气体供给管，将清洁气体引入处理室。

公开(公告)号：US20080251008A1

公开(公告)日：2008-10-16

申请号：US10592350

申请日：2005-03-11

申请人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

发明人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

IPC分类号： H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L29/417 ,  H01L29/78

CPC分类号： C23C16/22 ,  C23C16/04 ,  C23C16/24 ,  C23C16/4583 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28562 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834 ,  Y10T117/10 ,  Y10T117/1016

摘要： Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

摘要翻译： 公开了一种热壁型基板处理装置，包括：处理室，其用于容纳至少一个产品基板; 加热构件，其设置在所述处理室的外部并且用于加热所述产品基板; 连接到处理室的处理气体供应系统; 以及排气系统，其中与Si膜暴露的构件配置成与要对产品衬底进行选择性生长的表面相对，允许包括Si的外延膜选择性地生长在 产品基板的Si表面。

公开(公告)号：US08790463B2

公开(公告)日：2014-07-29

申请号：US10592350

申请日：2005-03-11

申请人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

发明人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

IPC分类号： C30B25/00

CPC分类号： C23C16/22 ,  C23C16/04 ,  C23C16/24 ,  C23C16/4583 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28562 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834 ,  Y10T117/10 ,  Y10T117/1016

摘要： Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

摘要翻译： 公开了一种热壁型基板处理装置，包括：处理室，其用于容纳至少一个产品基板; 加热构件，其设置在所述处理室的外部并且用于加热所述产品基板; 连接到处理室的处理气体供应系统; 以及排气系统，其中与Si膜暴露的构件配置成与要对产品衬底进行选择性生长的表面相对，允许包括Si的外延膜选择性地生长在 产品基板的Si表面。

公开(公告)号：US07851379B2

公开(公告)日：2010-12-14

申请号：US12410963

申请日：2009-03-25

申请人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

发明人： Atsushi Moriya ,  Yasuhiro Inokuchi ,  Yasuo Kunii

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02381 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02667 ,  H01L21/8221 ,  H01L27/0688

摘要： There are provided a substrate processing method and apparatus adapted to prevent deterioration of film thickness uniformity while maintaining the film forming rate. The substrate processing method comprises: (a) accommodating a plurality of substrates in a process chamber by carrying and stacking the substrates in the process chamber, (b) forming first amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying first gas, and (c) forming second amorphous silicon films to a predetermined thickness by heating at least the substrates and supplying second gas different from the first gas. The first gas is higher order gas than the second gas.

摘要翻译： 提供了一种适于在保持成膜速率的同时防止膜厚均匀性劣化的基板处理方法和装置。 基板处理方法包括：（a）通过在处理室中承载和堆叠基板将多个基板容纳在处理室中，（b）通过至少加热基板并首先提供第一非晶硅膜，形成预定厚度的第一非晶硅膜 气体，以及（c）通过至少加热所述基板并供应与所述第一气体不同的第二气体，将第二非晶硅膜形成为预定厚度。 第一气体比第二气体高。

公开(公告)号：US20110226418A1

公开(公告)日：2011-09-22

申请号：US13150277

申请日：2011-06-01

申请人： Kiyohisa ISHIBASHI ,  Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yoshiaki Hashiba

发明人： Kiyohisa ISHIBASHI ,  Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yoshiaki Hashiba

IPC分类号： H01L21/00 ,  C23F1/08 ,  C23C16/44 ,  C23C16/52 ,  B08B13/00

CPC分类号： C23C16/4405 ,  Y10S438/905

摘要： In a dry cleaning process, breakage of a gas supply pipe can be prevented, and maintenance efficiency can be increased. There is provided a substrate processing apparatus comprising: a process chamber configured to process a substrate; a heater configured to heat an inside of the process chamber; a gas supply pipe installed in the process chamber; a gas supply system configured to supply at least a cleaning gas to the gas supply pipe to introduce the cleaning gas into the process chamber; and a control unit configured to control the heater and gas supply system with the substrate unloaded from the process chamber to perform heating an inside of the process chamber to generate a crack in a thin film formed inside the process chamber; decreasing an inside temperature of the process chamber after the crack is generated in the thin film; and introducing the cleaning gas into the process chamber by supplying the cleaning gas to the gas supply pipe after the inside temperature of the process chamber is decreased.

摘要翻译： 在干洗过程中，可以防止气体供给管的破损，并且可以提高维护效率。 提供了一种基板处理装置，包括：处理室，被配置为处理基板; 加热器，其构造成加热所述处理室的内部; 安装在处理室中的气体供给管; 气体供给系统，被配置为至少向所述气体供给管供给清洁气体，以将所述清洁气体引入所述处理室; 以及控制单元，被配置为通过从处理室卸载的基板来控制加热器和气体供给系统，以对处理室的内部进行加热，以在处理室内形成的薄膜产生裂纹; 在薄膜中产生裂纹后降低处理室的内部温度; 并且在处理室的内部温度降低之后，通过向气体供给管供给清洁气体，将清洁气体引入处理室。

公开(公告)号：US08012885B2

公开(公告)日：2011-09-06

申请号：US12078527

申请日：2008-04-01

申请人： Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yasuhiro Ogawa

发明人： Yasuhiro Inokuchi ,  Atsushi Moriya ,  Yasuhiro Ogawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02046 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658

摘要： To provide a manufacturing method of a semiconductor device capable of performing a selective growth at a low temperature. A manufacturing method of a semiconductor device for placing in a processing chamber a substrate having at least a silicon surface and an insulating film surface on a surface; and allowing an epitaxial film to selectively grow only on the silicon surface by using a substrate processing apparatus for heating an atmosphere in the processing chamber and the substrate, using a heating unit disposed outside of the processing chamber, includes a substrate loading step of loading the substrate into the processing chamber; a pre-processing step of supplying dichlorosilane gas and hydrogen gas into the processing chamber while maintaining a temperature in the substrate processing chamber to a prescribed temperature of 700° C. or less, and removing a natural oxide film or impurities formed on the silicon surface; and a substrate unloading step of unloading the substrate to outside of the processing chamber.

摘要翻译： 提供能够在低温下进行选择性生长的半导体器件的制造方法。 一种半导体器件的制造方法，用于将表面上至少具有硅表面和绝缘膜表面的衬底放置在处理室中; 并且通过使用设置在处理室外部的加热单元，通过使用用于加热处理室和基板中的气氛的基板处理设备，允许外延膜仅在硅表面上选择性地生长，包括：基板加载步骤， 衬底进入处理室; 在将处理室内的温度维持在700℃以下的规定温度的同时将二氯硅烷气体和氢气供给到处理室中的预处理步骤，以及去除在硅表面上形成的天然氧化物膜或杂质 ; 以及将基板卸载到处理室外部的基板卸载步骤。