Image forming system having remotely accessed shared image forming apparatus
    8.
    发明授权
    Image forming system having remotely accessed shared image forming apparatus 有权
    图像形成系统具有远程访问的共享图像形成装置

    公开(公告)号:US09207885B2

    公开(公告)日:2015-12-08

    申请号:US14517978

    申请日:2014-10-20

    申请人: Makoto Sasaki

    发明人: Makoto Sasaki

    IPC分类号: G06F3/12 H04N1/32 H04N1/00

    摘要: An image forming system includes mobile terminals and image forming apparatuses, in which one image forming apparatus receives setting information to be used in order to use the image forming apparatus, the setting information being stored in one mobile terminal and able to be transmitted to another mobile terminal that will use another image forming apparatus based on the setting information. The one image forming apparatus determines whether the setting information is to be changed based on a comparison between the ability of the image forming apparatuses and, when determining that the setting information is to be changed, changes the setting information and send the changed setting information to the other mobile terminal.

    摘要翻译: 图像形成系统包括移动终端和图像形成装置,其中一个图像形成装置接收要使用的设置信息以使用图像形成装置,该设置信息存储在一个移动终端中并能够被发送到另一个移动装置 终端,其将基于设置信息使用另一图像形成装置。 一个图像形成装置基于图像形成装置的能力之间的比较来确定是否要改变设置信息,并且当确定要改变设置信息时,改变设置信息并将改变的设置信息发送到 另一个移动终端。

    Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot
    9.
    发明授权
    Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingot 有权
    碳化硅晶体锭,碳化硅晶片,以及碳化硅晶锭的制造方法

    公开(公告)号:US08642154B2

    公开(公告)日:2014-02-04

    申请号:US13475360

    申请日:2012-05-18

    IPC分类号: B32B3/02

    CPC分类号: C30B23/00 C30B29/36

    摘要: A silicon carbide crystal ingot having a surface greater than or equal to 4 inches, having an n-type dopant concentration greater than or equal to 1×1015 atoms/cm3 and less than or equal to 1×1020 atoms/cm3, a metal atom concentration greater than or equal to 1×1014 atoms/cm3 and less than or equal to 1×1018 atoms/cm3, and not exceeding the n-type dopant concentration, and a metal atom concentration gradient less than or equal to 1×1017 atoms/(cm3·mm), a silicon carbide single crystal wafer produced using the ingot, and a method for fabricating the silicon carbide crystal ingot.

    摘要翻译: 具有大于或等于4英寸的表面,具有大于或等于1×1015原子/ cm3且小于或等于1×1020原子/ cm3的n型掺杂剂浓度的碳化硅晶锭,金属原子 浓度大于或等于1×1014原子/ cm3且小于或等于1×1018原子/ cm3,并且不超过n型掺杂剂浓度,并且小于或等于1×1017原子的金属原子浓度梯度 /(cm 3·mm),使用该锭制造的碳化硅单晶晶片和制造碳化硅晶体锭的方法。