公开(公告)号：US20100193387A1

公开(公告)日：2010-08-05

申请号：US12671270

申请日：2008-08-01

申请人： Yasuko Sato ,  Ryo Komura ,  Takayuki Yano ,  Toshinori Koizumi

发明人： Yasuko Sato ,  Ryo Komura ,  Takayuki Yano ,  Toshinori Koizumi

IPC分类号： A61B19/02 ,  A61L2/08

CPC分类号： A61L2/087 ,  A61L2202/24 ,  A61M1/168 ,  A61M1/1682 ,  A61M2209/06 ,  B01D63/02 ,  B01D65/022 ,  B01D67/009 ,  B01D67/0097 ,  B01D2321/00

摘要： [PROBLEMS] To provide an efficient sterilization method for inexpensively sterilizing a medical article having a complex shape such as a body fluid treatment device of a generally-called dry or semi-dry type by so applying an electron beam that the overall absorbed dose distribution is small and to provide its application package form. [MEANS FOR SOLVING PROBLEMS] A method for sterilizing tubular body fluid treatment devices of a dry or semi-dry type contained in an electron beam-transmitting case with an electron beam. The method is characterized in that a stack structure which includes a gap layer having an average density of 0.010 to 0.180 g/cm3 and two body fluid treatment device layers having an average density of 0.050 to 0.200 g/cm3 and sandwiching the gap layer is contained in the electron beam-transmitting case, and the case is irradiated with the electron beam.

摘要翻译： 本发明提供一种有效的消毒方法，通过施加电子束，对总体吸收剂量分布为1〜10的电子束，对具有复杂形状的医疗制品进行廉价消毒，例如通常称为干或半干型的体液处理装置 并提供其应用程序包形式。 解决问题的手段一种包含在具有电子束的电子束透射壳中的干燥或半干燥型的管状体液处理装置的消毒方法。 该方法的特征在于，包含平均密度为0.010〜0.180g / cm 3的间隙层和平均密度为0.050〜0.200g / cm 3的两个体液处理装置层并夹持间隙层的堆叠结构 在电子束透射的情况下，用电子束照射该情况。

公开(公告)号：US08691146B2

公开(公告)日：2014-04-08

申请号：US12671270

申请日：2008-08-01

申请人： Yasuko Sato ,  Ryo Komura ,  Takayuki Yano ,  Toshinori Koizumi

发明人： Yasuko Sato ,  Ryo Komura ,  Takayuki Yano ,  Toshinori Koizumi

IPC分类号： A61L2/00 ,  B01J19/08 ,  G01N21/00

CPC分类号： A61L2/087 ,  A61L2202/24 ,  A61M1/168 ,  A61M1/1682 ,  A61M2209/06 ,  B01D63/02 ,  B01D65/022 ,  B01D67/009 ,  B01D67/0097 ,  B01D2321/00

摘要： To provide an efficient sterilization method for inexpensively sterilizing a medical article having a complex shape such as a body fluid treatment device of a generally-called dry or semi-dry type by so applying an electron beam that the overall absorbed dose distribution is small and to provide its application package form. [MEANS FOR SOLVING PROBLEMS] A method for sterilizing tubular body fluid treatment devices of a dry or semi-dry type contained in an electron beam-transmitting case with an electron beam. The method is characterized in that a stack structure which includes a gap layer having an average density of 0.010 to 0.180 g/cm3 and two body fluid treatment device layers having an average density of 0.050 to 0.200 g/cm3 and sandwiching the gap layer is contained in the electron beam-transmitting case, and the case is irradiated with the electron beam.

摘要翻译： 为了提供一种有效的灭菌方法，通过使得总体吸收剂量分布小的电子束施加具有复杂形状的医疗制品，例如通常称为干或半干型的体液处理装置，以便廉价地消毒，并且 提供其应用程序包形式。 解决问题的手段一种包含在具有电子束的电子束透射壳中的干燥或半干燥型的管状体液处理装置的消毒方法。 该方法的特征在于，包含平均密度为0.010〜0.180g / cm 3的间隙层和平均密度为0.050〜0.200g / cm 3的两个体液处理装置层并夹持间隙层的堆叠结构 在电子束透射的情况下，用电子束照射该情况。

公开(公告)号：US20120052344A1

公开(公告)日：2012-03-01

申请号：US13217976

申请日：2011-08-25

申请人： Tatsuya Nagai ,  Koji Izumi ,  Satoshi Wada ,  Takayuki Yano

发明人： Tatsuya Nagai ,  Koji Izumi ,  Satoshi Wada ,  Takayuki Yano

IPC分类号： H01M10/42 ,  H01M2/06 ,  H01M2/30 ,  H01M10/02

CPC分类号： H01M2/34 ,  H01M2/348 ,  H01M10/4257 ,  H01M2200/106

摘要： An internal resistance is maintained equal to or lower than 70 mΩ, and that a temperature rise of a battery during an external short circuit at an ambient temperature of 23° C. with a margin of error of plus or minus 2° C. does not exceed 45° C.

摘要翻译： 内部电阻保持等于或低于70mΩ和OHgr，并且在23°C的环境温度下的外部短路期间电池的温度上升具有正或负2°C的误差裕度。 不超过45℃

公开(公告)号：US06682848B1

公开(公告)日：2004-01-27

申请号：US09669572

申请日：2000-09-26

申请人： Takayuki Yano ,  Masao Takee ,  Akifumi Yamawaki

发明人： Takayuki Yano ,  Masao Takee ,  Akifumi Yamawaki

IPC分类号： H01M1024

CPC分类号： H01M4/742 ,  H01M4/70 ,  H01M4/745 ,  H01M4/808

摘要： A porous metal material 10 was filled with an active material slurry, dried, and then rolled to a predetermined thickness. This rolling causes pores 11 formed by a network skeleton to be stretched in the rolling direction (direction represented by the arrow in FIG. 1(a)) to form pores 12 having a shape similar to ellipsoid or deformed ellipsoid having a long axis. Subsequently, the porous metal material was cut in such an arrangement that the longitudinal direction of the pores 12 having a shape similar to ellipsoid or deformed ellipsoid coincides with the crosswise direction of the electrode plate, and then subjected to roller treatment through a series of rollers in the longitudinal direction of the electrode plate. This roller treatment causes numerous cracks 14 to be formed at a very small pitch in the direction parallel to the rolling direction as shown diagrammatically in FIG. 1(c).

摘要翻译： 多孔金属材料10填充有活性材料浆料，干燥，然后轧制至预定厚度。 该轧制使得由网状骨架形成的孔11在轧制方向（图1（a）中的箭头所示的方向）上拉伸，以形成具有与具有长轴的椭圆体或变形椭圆体相似的形状的孔12。 随后，将多孔金属材料切割成具有类似于椭圆形或变形椭圆体的形状的孔12的纵向方向与电极板的横向重合，然后通过一系列辊进行辊式处理 在电极板的纵向上。 这种辊子处理使得在与轧制方向平行的方向上以非常小的间距形成许多裂缝14，如图1所示。 1（c）。

公开(公告)号：US5534446A

公开(公告)日：1996-07-09

申请号：US534169

申请日：1995-09-26

申请人： Masaharu Tachimori ,  Takayuki Yano ,  Yasuo Tsumori ,  Tatsuo Nakajima ,  Isao Hamaguchi

发明人： Masaharu Tachimori ,  Takayuki Yano ,  Yasuo Tsumori ,  Tatsuo Nakajima ,  Isao Hamaguchi

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/76243 ,  H01L21/26533 ,  Y10S438/909

摘要： A process for producing a semiconductor substrate, including the phases of implanting oxygen ions into a semiconductor silicon substrate through one surface thereof to form a high oxygen concentration layer in the semiconductor silicon substrate, and then heat-treating the semiconductor substrate to cause a chemical reaction to occur between the implanted oxygen ions and the silicon, thereby forming an insulating silicon oxide film in the semiconductor silicon substrate, wherein the heat treatment phase includes at least a heat treatment step using an atmosphere having an oxygen partial pressure of 5.times.10.sup.3 Pa or more.The process is advantageously used to produce a high quality SOI semiconductor substrate in which the number of the defects providing a path for current leakage is reduced, the buried oxide layer has an improved dielectric breakdown strength, the interface between the buried oxide film and the adjoining silicon layers has a small roughness, and the buried oxide film can be produced with a wider range of thickness.

摘要翻译： 一种制造半导体衬底的方法，包括通过其一个表面将氧离子注入到半导体硅衬底中以在半导体硅衬底中形成高氧浓度层的相，然后对半导体衬底进行热处理以引起化学反应 发生在注入的氧离子和硅之间，从而在半导体硅衬底中形成绝缘氧化硅膜，其中热处理阶段至少包括使用氧分压为5×10 3 Pa以上的气氛的热处理工序。 该方法有利地用于制造高质量的SOI半导体衬底，其中提供漏电路径的缺陷数量减少，掩埋氧化物层具有改善的介电击穿强度，掩埋氧化膜与邻接层之间的界面 硅层具有较小的粗糙度，并且能够以较宽的厚度范围制造掩埋氧化膜。

公开(公告)号：US08704543B2

公开(公告)日：2014-04-22

申请号：US13003953

申请日：2008-07-14

申请人： Takayuki Yano

发明人： Takayuki Yano

IPC分类号： G01R31/00

CPC分类号： G01R31/2887

摘要： A test head moving apparatus includes elevating arms that move a test head up and down, a frame that horizontally moves the test head, and an interlock mechanism that prohibits the horizontal movement of the frame on the basis of a height of the test head. The interlock mechanism has a limit switch that detects that the test head is positioned at the lowermost limit and stoppers capable of pressing the pressing units onto a floor plane.

摘要翻译： 测试头移动装置包括使测试头上下移动的升降臂，水平移动测试头的框架，以及基于测试头的高度来禁止框架的水平移动的互锁机构。 联锁机构具有检测出测试头位于最低限度的限位开关和能够将按压单元按压到地板平面上的挡块。

公开(公告)号：US08648617B2

公开(公告)日：2014-02-11

申请号：US13022174

申请日：2011-02-07

申请人： Yuji Maruyama ,  Tatsuhiro Mizumasa ,  Takayuki Nakashiro ,  Shigeru Gotoh ,  Takayuki Yano ,  Susumu Koshinuma ,  Shunsuke Taniguchi ,  Yuki Yanagisako

发明人： Yuji Maruyama ,  Tatsuhiro Mizumasa ,  Takayuki Nakashiro ,  Shigeru Gotoh ,  Takayuki Yano ,  Susumu Koshinuma ,  Shunsuke Taniguchi ,  Yuki Yanagisako

IPC分类号： G01R31/26

CPC分类号： G01R31/2884 ,  H01L22/32 ,  H01L2224/02166 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/00

摘要： According to the following disclosure, disclosed is a semiconductor device including: an internal circuit configured to receive and output a signal current; a current mirror unit outputting a copied current corresponding to the signal current; and a test pad from which the copied current is taken out.

摘要翻译： 根据以下公开，公开了一种半导体器件，包括：内部电路，被配置为接收和输出信号电流; 输出与信号电流对应的复制电流的电流镜单元; 以及从其中取出复制的电流的测试垫。

公开(公告)号：US20110221466A1

公开(公告)日：2011-09-15

申请号：US13022174

申请日：2011-02-07

申请人： Yuji MARUYAMA ,  Tatsuhiro Mizumasa ,  Takayuki Nakashiro ,  Shigeru Gotoh ,  Takayuki Yano ,  Susumu Koshinuma ,  Shunsuke Taniguchi ,  Yuki Yanagisako

发明人： Yuji MARUYAMA ,  Tatsuhiro Mizumasa ,  Takayuki Nakashiro ,  Shigeru Gotoh ,  Takayuki Yano ,  Susumu Koshinuma ,  Shunsuke Taniguchi ,  Yuki Yanagisako

IPC分类号： G01R31/26 ,  H01L23/58

CPC分类号： G01R31/2884 ,  H01L22/32 ,  H01L2224/02166 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/00

摘要： According to the following disclosure, disclosed is a semiconductor device including: an internal circuit configured to receive and output a signal current; a current mirror unit outputting a copied current corresponding to the signal current; and a test pad from which the copied current is taken out.

摘要翻译： 根据以下公开，公开了一种半导体器件，包括：内部电路，被配置为接收和输出信号电流; 输出与信号电流对应的复制电流的电流镜单元; 以及从其中取出复制的电流的测试垫。

公开(公告)号：US08018702B2

公开(公告)日：2011-09-13

申请号：US12267225

申请日：2008-11-07

申请人： Tetsuo Maeda ,  Masaharu Yuhara ,  Masahide Fujita ,  Michihiro Takata ,  Takayuki Yano ,  Daisuke Yase

发明人： Tetsuo Maeda ,  Masaharu Yuhara ,  Masahide Fujita ,  Michihiro Takata ,  Takayuki Yano ,  Daisuke Yase

IPC分类号： H02H3/00

CPC分类号： B60R16/03 ,  G01R31/007

摘要： The on-vehicle electronic control device includes a main power supply circuit fed with power from an on-vehicle battery through an output contact of a power supply relay and a main power supply terminal of a connector to supply a stabilized control voltage to a microprocessor. When contact failure occurs in the main power supply terminal, the main power supply circuit is fed with bypass power from the output contact through a first electrical load and a commutation diode to perform the one of the report of the abnormality and the storage of the abnormality occurrence history information. A bypass power fed state is detected when an input voltage to the main power supply circuit is lower than a power supply voltage of the on-vehicle battery.

摘要翻译： 车载电子控制装置包括通过电源继电器的输出触点和连接器的主电源端子从车载电池供电的主电源电路，以向微处理器提供稳定的控制电压。 当主电源端子发生接触故障时，主电源电路通过第一电负载和换向二极管从输出触点馈送旁路电源，以执行异常报告和异常存储之一 发生历史信息。 当对主电源电路的输入电压低于车载电池的电源电压时，检测旁路供电状态。

公开(公告)号：US20100250099A1

公开(公告)日：2010-09-30

申请号：US12644781

申请日：2009-12-22

申请人： Hideaki ASAKAWA ,  Takayuki Yano

发明人： Hideaki ASAKAWA ,  Takayuki Yano

IPC分类号： F02D41/30

CPC分类号： F02D41/08 ,  F02D41/22 ,  F02D41/2493 ,  F02D41/263 ,  F02D41/36 ,  Y02T10/44

摘要： There is provided an engine control apparatus that makes it possible that, even in the case where an abnormality occurs in a microcomputer and the operations of the injectors in a series of cylinders are interrupted, there is obtained continuous driving without interruption of the engine, when the microcomputer is restored to normal condition. The microcomputer stores in a backup RAM the injection cylinder and the injection fuel amount at a time when a main fuel injection control means sequentially outputs a drive signal to each of the injectors of the cylinders. After the microcomputer 11 is reset due to detection of an abnormality therein and then is restarted, the post-resetting injection cylinder determining means 31 in the microcomputer determines cylinders into which fuel could not be injected during reset period, based on an fuel injection cylinder that has been stored in a backup RAM 11a at a time immediately prior to the resetting, and fuel is immediately and asynchronously injected into the determined cylinders at an injection fuel amount that has been stored in the backup RAM 11a at a time immediately prior to the resetting.

摘要翻译： 提供了一种发动机控制装置，即使在微型计算机发生异常并且一系列气缸中的喷射器的操作被中断的情况下也可以获得连续驾驶而不会中断发动机，当 微机恢复正常状态。 微型计算机在主燃料喷射控制装置顺序地向气缸的每个喷射器输出驱动信号时，将备注RAM存储在备注RAM中，并且喷射燃料量。 在微计算机11由于其中的异常检测而复位然后重新启动之后，微型计算机中的复位后注射缸确定装置31基于燃料喷射缸确定在复位期间不能喷射燃料的气缸， 已经在紧接复位之前的时间存储在备用RAM 11a中，并且在紧接复位之前的时间点以已经存储在备用RAM 11a中的喷射燃料量立即异步地将燃料和异步地喷射到所确定的气缸中 。