公开(公告)号：US09024512B2

公开(公告)日：2015-05-05

申请号：US13366130

申请日：2012-02-03

申请人： Yasutoshi Hirabayashi ,  Takamichi Fujii

发明人： Yasutoshi Hirabayashi ,  Takamichi Fujii

IPC分类号： H01L41/09 ,  A61B17/32 ,  A61B17/22 ,  H01L41/08 ,  H01L41/316 ,  H01L41/25 ,  A61B17/00

CPC分类号： A61B17/320036 ,  A61B17/2202 ,  A61B2017/00526 ,  H01L41/081 ,  H01L41/25 ,  H01L41/316 ,  Y10T29/42

摘要： A resonant transducer comprising: a vibration plate; and a piezoelectric element including a piezoelectric film and an upper electrode that are laminated on the vibration plate, wherein a compressive stress is applied to the piezoelectric film.

摘要翻译： 一种谐振换能器，包括：振动板; 以及压电元件，其包括层压在振动板上的压电膜和上电极，其中压电应力施加到压电膜。

公开(公告)号：US20110204750A1

公开(公告)日：2011-08-25

申请号：US13032181

申请日：2011-02-22

申请人： Takamichi Fujii ,  Yasutoshi Hirabayashi

发明人： Takamichi Fujii ,  Yasutoshi Hirabayashi

IPC分类号： H01L41/04 ,  H01L41/22

CPC分类号： H01L41/094 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316

摘要： An actuator includes: a diaphragm having a thickness equal to or greater than 0.5 μm and equal to or less than 20 μm; a piezoelectric body layer which is provided on a first surface side of the diaphragm, and receives stress from the diaphragm; a pair of electrodes which is provided on the first surface side of the diaphragm together with the piezoelectric body layer, and is mutually opposing via the piezoelectric body layer; and a stress adjusting layer which is provided on a second surface side of the diaphragm on an opposite side to the first surface of the diaphragm, and receives stress from the diaphragm in a same direction as the stress that the piezoelectric body layer receives from the diaphragm.

摘要翻译： 致动器包括：厚度等于或大于等于或等于20μm的隔膜; 压电体层，其设置在所述隔膜的第一表面侧，并承受来自所述隔膜的应力; 一对电极，其与压电体层一起设置在隔膜的第一表面侧上，并且经由压电体层彼此相对; 以及应力调整层，其设置在所述隔膜的与所述隔膜的第一面相反的一侧的第二表面侧，并且以与所述压电体层从所述隔膜接收的应力相同的方向受到所述隔膜的应力 。

公开(公告)号：US20120221029A1

公开(公告)日：2012-08-30

申请号：US13366130

申请日：2012-02-03

申请人： Yasutoshi HIRABAYASHI ,  Takamichi Fujii

发明人： Yasutoshi HIRABAYASHI ,  Takamichi Fujii

IPC分类号： A61B17/32 ,  H01L41/22 ,  H01L41/053

CPC分类号： A61B17/320036 ,  A61B17/2202 ,  A61B2017/00526 ,  H01L41/081 ,  H01L41/25 ,  H01L41/316 ,  Y10T29/42

摘要： A resonant transducer comprising: a vibration plate; and a piezoelectric element including a piezoelectric film and an upper electrode that are laminated on the vibration plate, wherein a compressive stress is applied to the piezoelectric film.

摘要翻译： 一种谐振换能器，包括：振动板; 以及压电元件，其包括层压在振动板上的压电膜和上电极，其中压电应力施加到压电膜。

公开(公告)号：US20120212102A1

公开(公告)日：2012-08-23

申请号：US13348196

申请日：2012-01-11

申请人： Yasutoshi HIRABAYASHI ,  Takamichi Fujii

发明人： Yasutoshi HIRABAYASHI ,  Takamichi Fujii

IPC分类号： G10K9/122

CPC分类号： A61B17/22012 ,  A61B17/2202 ,  A61B2017/22021 ,  A61B2017/22074 ,  A61B2018/00589

摘要： A resonant transducer comprising:a vibration plate; anda piezoelectric element including a piezoelectric film and an upper electrode,wherein a difference between a Young's modulus of the vibration plate and a Young's modulus of the piezoelectric film is not more than 20% with respect to the Young's modulus of the vibration plate.

摘要翻译： 一种谐振换能器，包括：振动板; 以及包括压电膜和上电极的压电元件，其中振动板的杨氏模量与压电膜的杨氏模量之差相对于振动板的杨氏模量不大于20％。

公开(公告)号：US08710716B2

公开(公告)日：2014-04-29

申请号：US13032181

申请日：2011-02-22

申请人： Takamichi Fujii ,  Yasutoshi Hirabayashi

发明人： Takamichi Fujii ,  Yasutoshi Hirabayashi

IPC分类号： H01L41/22

CPC分类号： H01L41/094 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316

摘要： An actuator includes: a diaphragm having a thickness equal to or greater than 0.5 μm and equal to or less than 20 μm; a piezoelectric body layer which is provided on a first surface side of the diaphragm, and receives stress from the diaphragm; a pair of electrodes which is provided on the first surface side of the diaphragm together with the piezoelectric body layer, and is mutually opposing via the piezoelectric body layer; and a stress adjusting layer which is provided on a second surface side of the diaphragm on an opposite side to the first surface of the diaphragm, and receives stress from the diaphragm in a same direction as the stress that the piezoelectric body layer receives from the diaphragm.

摘要翻译： 致动器包括：厚度等于或大于等于或等于20μm的隔膜; 压电体层，其设置在所述隔膜的第一表面侧，并承受来自所述隔膜的应力; 一对电极，其与压电体层一起设置在隔膜的第一表面侧上，并且经由压电体层彼此相对; 以及应力调整层，其设置在所述隔膜的与所述隔膜的第一面相反的一侧的第二表面侧，并且以与所述压电体层从所述隔膜接收的应力相同的方向受到所述隔膜的应力 。

公开(公告)号：US08974626B2

公开(公告)日：2015-03-10

申请号：US13069154

申请日：2011-03-22

申请人： Takamichi Fujii ,  Akihiro Mukaiyama

发明人： Takamichi Fujii ,  Akihiro Mukaiyama

IPC分类号： B29C65/00 ,  H01L21/00 ,  B32B7/02 ,  B81C3/00

CPC分类号： B32B7/02 ,  B32B2457/14 ,  B81B2201/13 ,  B81B2203/0338 ,  B81B2207/07 ,  B81C3/004 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T156/10 ,  Y10T428/2495

摘要： A method of manufacturing a micro structure, includes the steps of: preparing separate first and second substrates, the first substrate having a first surface on which a first structural body having a first height and a second structural body having a second height greater than the first height of the first structural body are arranged, the second substrate having a second surface; then placing the first and second substrates to cause the first and second surfaces to face each other across the first and second structural bodies; and then bonding the first and second substrates to each other while compressing the second structural body in a height direction thereof between the first and second surfaces to cause the second structural body to have a height defined by the first structural body.

摘要翻译： 一种制造微结构的方法包括以下步骤：制备单独的第一和第二基底，所述第一基底具有第一表面，第一表面具有第一高度的第一结构体和具有第二高度的第二高度的第二结构体 布置第一结构体的高度，第二基底具有第二表面; 然后放置第一和第二基板以使第一和第二表面跨过第一和第二结构体彼此面对; 然后在第一和第二表面之间沿其高度方向压缩第二结构体以使第二结构体具有由第一结构体限定的高度，将第一和第二基板彼此接合。

公开(公告)号：US08366259B2

公开(公告)日：2013-02-05

申请号：US13443042

申请日：2012-04-10

申请人： Takamichi Fujii ,  Takayuki Naono ,  Takami Arakawa

发明人： Takamichi Fujii ,  Takayuki Naono ,  Takami Arakawa

IPC分类号： B41J2/17

CPC分类号： B41J2/155 ,  B41J2/14233 ,  C23C14/0036 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/3471 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01J37/3444 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T428/31504

摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

摘要翻译： 当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位 被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

公开(公告)号：US08075105B2

公开(公告)日：2011-12-13

申请号：US12560131

申请日：2009-09-15

申请人： Yoshikazu Hishinuma ,  Takamichi Fujii ,  Takayuki Naono ,  Yuuichi Okamoto ,  Ryosuke Ozawa

发明人： Yoshikazu Hishinuma ,  Takamichi Fujii ,  Takayuki Naono ,  Yuuichi Okamoto ,  Ryosuke Ozawa

IPC分类号： B41J2/045 ,  C04B35/495 ,  C04B35/00 ,  H01L41/18 ,  H01L41/187

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  C23C14/025 ,  C23C14/083 ,  C23C14/5806 ,  G01N21/65 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/316

摘要： Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.

摘要翻译： 本发明提供一种具有钙钛矿型晶体结构并含有铅作为主要成分的钙钛矿型氧化物膜，其在表面上的多个点进行拉曼显微光谱检测，以便在施加电流时测量拉曼光谱 100kV / cm的电场，施加无电场时，具有2.2cm -1以下的峰值偏移量的绝对值的平均值，峰值偏移量在500〜650nm范围内的拉曼光谱之间发现 在施加100kV / cm的电场时测量的cm -1，并且在施加无电场时测量的在500至650cm -1范围内的拉曼光谱。 还提供了这种膜的制造方法和评价方法以及使用这种膜的装置。

公开(公告)号：US07963639B2

公开(公告)日：2011-06-21

申请号：US12399642

申请日：2009-03-06

申请人： Takamichi Fujii ,  Mitsuru Sawano

发明人： Takamichi Fujii ,  Mitsuru Sawano

IPC分类号： B41J2/045

CPC分类号： B41J2/14233

摘要： A liquid ejection device includes a liquid ejection member including a pressurized liquid chamber and a liquid ejection orifice which is in fluid communication with the pressurized liquid chamber to eject a liquid in the pressurized liquid chamber to the outside. A piezoelectric device is formed on the pressurized liquid chamber via a vibrating diaphragm. The piezoelectric device includes a lower electrode, a piezoelectric film and an upper electrode, which are disposed sequentially. The piezoelectric film is a thin-film piezoelectric material having a Curie point of 200° C. or more. The liquid ejection device further includes a heating element for heating a material, which has a melting point of not less than 150° C. and lower than the Curie point of the piezoelectric film, charged in the pressurized liquid chamber to a temperature not less than the melting point of the material.

摘要翻译： 液体喷射装置包括液体喷射构件，该液体喷射构件包括加压液体室和液体喷射孔，其与加压液体室流体连通以将加压液体室中的液体喷射到外部。 通过振动膜在加压液体室上形成压电装置。 压电元件包括​​依次布置的下电极，压电膜和上电极。 压电膜是居里点为200℃以上的薄膜压电材料。 液体喷射装置还包括用于加热材料的加热元件，该材料的熔点不低于150℃且低于压电膜的居里点，并将其装入加压液体室中至不低于 材料的熔点。

公开(公告)号：US20110121096A1

公开(公告)日：2011-05-26

申请号：US13000408

申请日：2009-07-27

申请人： Yasukazu Nihei ,  Takamichi Fujii ,  Yuuichi Okamoto ,  Takami Arakawa ,  Takayuki Naono

发明人： Yasukazu Nihei ,  Takamichi Fujii ,  Yuuichi Okamoto ,  Takami Arakawa ,  Takayuki Naono

IPC分类号： B05B1/08 ,  H01L41/22 ,  H01L41/18 ,  H01L41/04

CPC分类号： B41J2/161 ,  B41J2/1646 ,  C04B35/49 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  Y10T29/42

摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3  (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.

摘要翻译： 一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜 在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素 ，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。