公开(公告)号：US5360484A

公开(公告)日：1994-11-01

申请号：US63048

申请日：1993-05-19

申请人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura

发明人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura

IPC分类号： C23C16/50 ,  C23C16/511 ,  G03G5/08 ,  H01J37/32 ,  H01L21/205

CPC分类号： C23C16/511 ,  H01J37/32238 ,  H01J37/32467

摘要： An improved microwave plasma CVD apparatus for forming a functional deposited film which is provided with a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.

摘要翻译： 一种用于形成功能性沉积膜的改进的微波等离子体CVD装置，其具有由α-氧化铝烧结体构成的微波透射窗，所述烧结体包含α-氧化铝作为基质，其平均粒径d满足式 在理论密度rho 1和体积密度rho 2之间的rho 2 / rho 1的比值满足方程式0.800

公开(公告)号：US5597623A

公开(公告)日：1997-01-28

申请号：US307099

申请日：1994-09-16

申请人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura

发明人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura

IPC分类号： C23C16/50 ,  C23C16/511 ,  G03G5/08 ,  H01J37/32 ,  H01L21/205 ,  H05H1/30

CPC分类号： C23C16/511 ,  H01J37/32238 ,  H01J37/32467

摘要： An improved microwave plasma CVD process for forming a functional deposited film using a microwave transmissive window composed of a sintered alpha-alumina ceramics body containing alpha-alumina as a matrix comprised of fine particles with a mean particle size d satisfying the equation 0.5 .mu.m.ltoreq.d.ltoreq.50 .mu.m and with a ratio of .rho..sub.2 /.rho..sub.1 between the theoretical density .rho..sub.1 and the bulk density .rho..sub.2 satisfying the equation 0.800.ltoreq..rho..sub.2 /.rho..sub.1 .ltoreq.0.995.

摘要翻译： 一种改进的微波等离子体CVD法，用于使用由包含α-氧化铝的烧结α-氧化铝陶瓷体构成的微波透射窗形成功能性沉积膜，该α-氧化铝作为基质，其平均粒径d满足0.5μm / = d

公开(公告)号：US5514506A

公开(公告)日：1996-05-07

申请号：US165840

申请日：1993-12-14

申请人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura ,  Hiroyuki Katagiri ,  Satoshi Kojima

发明人： Yasuyoshi Takai ,  Tetsuya Takei ,  Hirokazu Otoshi ,  Ryuji Okamura ,  Hiroyuki Katagiri ,  Satoshi Kojima

IPC分类号： G03G5/082

CPC分类号： G03G5/08228 ,  G03G5/08242

摘要： A light receiving member comprising a substrate and a light receiving layer disposed on said substrate, said light receiving layer having a stacked structure comprising a plurality of constituent layers each being composed of a non-single crystal material containing silicon atoms as a matrix and at least either hydrogen atoms or halogen atoms, characterized in that said light receiving layer has a region containing at least one kind of atoms selected from the group consisting of hydrogen atoms and halogen atoms at an enhanced concentration distribution in the thickness direction in the vicinity of at least one layer interface of the light receiving layer.

摘要翻译： 一种受光部件，包括基板和设置在所述基板上的光接收层，所述光接收层具有堆叠结构，所述层叠结构包括多个构成层，每个构成层由含有硅原子作为基质的非单晶材料构成，并且至少 氢原子或卤素原子，其特征在于，所述光接收层具有包含至少一种选自氢原子和卤原子的原子的区域，其浓度分布在厚度方向上至少在附近至少 光接收层的一层界面。

公开(公告)号：US5443645A

公开(公告)日：1995-08-22

申请号：US173948

申请日：1993-12-28

申请人： Hirokazu Otoshi ,  Tetsuya Takei ,  Yasuyoshi Takai ,  Ryuji Okamura ,  Shigeru Shirai ,  Teruo Misumi

发明人： Hirokazu Otoshi ,  Tetsuya Takei ,  Yasuyoshi Takai ,  Ryuji Okamura ,  Shigeru Shirai ,  Teruo Misumi

IPC分类号： C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  C23C16/50

CPC分类号： C23C16/24 ,  C23C16/455 ,  C23C16/45578 ,  C23C16/511

摘要： A deposited film-forming apparatus comprising a reaction chamber capable of maintaining at a reduced pressure, means for arranging a substrate on which a film is to be formed in said reaction chamber, a gas feed means for supplying a gaseous raw material into said reaction chamber and means for introducing a microwave energy into said reaction chamber, characterized in that said gas feed means is arranged in the space circumscribed by said substrate, said gas feed means comprises a multiple pipe structure, said multiple pipe structure being connected to a gas supply source for supplying said gaseous raw material, the respective constituent pipes of said multiple pipe structure being provided with a plurality of gas spouting holes such that said gas spouting holes are in communication with each other, and means for applying a bias voltage between said substrate and said gas feed means.

摘要翻译： 一种沉积膜形成装置，包括能够在减压下保持的反应室，用于布置在其上形成有膜的基板的装置，用于将气态原料供给到所述反应室中的气体供给装置 以及用于将微波能量引入所述反应室的装置，其特征在于，所述气体供给装置布置在由所述基板限定的空间中，所述气体供给装置包括多个管道结构，所述多个管道结构连接到气体供应源 为了供应所述气态原料，所述多管结构的各构成管设置有多个气体喷出孔，使得所述气体喷出孔彼此连通，以及用于在所述基板和所述 气体进料装置。

公开(公告)号：US5030476A

公开(公告)日：1991-07-09

申请号：US526536

申请日：1990-05-21

申请人： Ryuji Okamura ,  Hirokazu Otoshi ,  Tetsuya Takei

发明人： Ryuji Okamura ,  Hirokazu Otoshi ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  C23C16/46 ,  C23C16/511

CPC分类号： C23C16/511 ,  C23C16/46

摘要： A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means. The process enables the deposited film of good quality to be formed stably at high speed and the deposited film is useful as an element member for semiconductive devices, photosensitive devices for electrophotography, photovoltaic devices, other electronic elements and optical elements.

摘要翻译： 一种用于形成功能性沉积膜的方法，其适用于包括基本封闭的反应室的设备，布置成围绕放电空间的多个圆柱形基板和设置在每个圆柱形基板的至少一端的微波引入装置 并且其中引入微波能量，使得在放电空间中形成含有源自起始气体的反应气体的辉光放电等离子体，从而在每个圆柱形基板上形成沉积膜。 该方法的特征在于，在所述多个圆柱形基板的每一个的内部设置有温度控制装置，并且与引入导热气体同时，导热气体从每个圆柱形基板的一端排出 微波引入装置附近。 该方法能够以高速稳定地形成高质量的沉积膜，并且沉积膜可用作半导体器件的元件部件，电子照相用光敏器件，光电器件，其它电子元件和光学元件。

公开(公告)号：US5439715A

公开(公告)日：1995-08-08

申请号：US165868

申请日：1993-12-14

申请人： Ryuji Okamura ,  Hirokazu Otoshi ,  Tetsuya Takei

发明人： Ryuji Okamura ,  Hirokazu Otoshi ,  Tetsuya Takei

IPC分类号： C23C16/50 ,  C23C16/46 ,  C23C16/511 ,  B05D3/06

CPC分类号： C23C16/511 ,  C23C16/46

摘要： A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means. The process enables the deposited film of good quality to be formed stably at high speed and the deposited film is useful as an element member for semiconductive devices, photosensitive devices for electrophotography, photovoltaic devices, other electronic elements and optical elements.

摘要翻译： 一种用于形成功能性沉积膜的方法，其适用于包括基本封闭的反应室的设备，布置成围绕放电空间的多个圆柱形基板和设置在每个圆柱形基板的至少一端的微波引入装置 并且其中引入微波能量，使得在放电空间中形成含有源自起始气体的反应气体的辉光放电等离子体，从而在每个圆柱形基板上形成沉积膜。 该方法的特征在于，在所述多个圆柱形基板的每一个的内部设置有温度控制装置，并且与引入导热气体同时，导热气体从每个圆柱形基板的一端排出 微波引入装置附近。 该方法能够以高速稳定地形成高质量的沉积膜，并且沉积膜可用作半导体器件的元件部件，电子照相用光敏器件，光电器件，其它电子元件和光学元件。

公开(公告)号：US5637358A

公开(公告)日：1997-06-10

申请号：US376652

申请日：1995-01-20

申请人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

发明人： Hirokazu Otoshi ,  Keishi Saitoh ,  Ryuji Okamura ,  Koichi Matsuda

IPC分类号： C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/511 ,  H01J37/32238 ,  H01J37/32495

摘要： In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface of the microwave introducing window.

摘要翻译： 在用于在基板上形成功能沉积膜的微波等离子体化学气相沉积设备中，该微波等离子体化学气相沉积设备包括一个基本上封闭的成膜室，该室具有一个圆周壁，该圆周壁的端部气密地设置有一个微波引入窗口， 电源连接，所述成膜室具有用于引起等离子体放电的放电空间，导致在基板上形成沉积膜，所述基板位于布置在所述成膜室中的基板保持器和所述成膜室 设置有用于将成膜原料气体供应到所述放电空间的装置和用于抽出所述成膜室的装置，其改进包括可移动地放置在位于所述膜形成室中的所述微波引入窗口的表面上的电介质片， 形成室，其处于所述电介质片面对面的状态 与微波引入窗口的所述表面发生反应。

公开(公告)号：US5016565A

公开(公告)日：1991-05-21

申请号：US399900

申请日：1989-08-29

申请人： Keishi Saitoh ,  Ryuji Okamura ,  Hirokazu Otoshi ,  Koichi Matsuda

发明人： Keishi Saitoh ,  Ryuji Okamura ,  Hirokazu Otoshi ,  Koichi Matsuda

IPC分类号： C23C16/511 ,  H01J37/32

CPC分类号： H01J37/32935 ,  C23C16/511

摘要： A microwave plasma CVD apparatus for forming a functional deposited film comprises a film-forming chamber having a discharge space, a substrate holder, and apparatus for introducing a film-forming raw material gas into the film-forming chamber, for transmitting microwaves into the film-forming chamber to apply microwave energy to the raw material gas so that the raw material gas is converted into plasma, and for simultaneously applying a bias voltage to the plasma generated in the discharge space from an external system to control the plasma potential. A mechanism is provided for temporarily suspending the application of the bias voltage in the case when abnormal discharge occurs, while monitoring the fluctuation of the bias voltage to be applied to the plasma, to thereby inhibit the occurrence of abnormal discharge.

摘要翻译： 用于形成功能沉积膜的微波等离子体CVD装置包括具有放电空间的成膜室，基板保持器和用于将成膜原料气体引入成膜室的装置，用于将微波传输到膜中 对原料气体施加微波能量，使原料气体转化为等离子体，同时对来自外部系统的放电空间中产生的等离子体施加偏置电压，以控制等离子体电位。 在监视异常放电的情况下，同时监视施加到等离子体的偏置电压的波动，从而抑制异常放电的发生，提供暂时中止施加偏置电压的机构。

公开(公告)号：US6031198A

公开(公告)日：2000-02-29

申请号：US80922

申请日：1998-05-19

申请人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

发明人： Koichiro Moriyama ,  Yukito Aota ,  Masahiro Kanai ,  Hirokazu Otoshi

IPC分类号： H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B23K9/00

CPC分类号： H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processing method for processing a substrate includes a discharge beginning step of supplying a second high-frequency power into a processing chamber through an impedance matching circuit and then supplying a first high-frequency power larger than a power used in processing into the processing chamber to generate a plasma. An adjustment step of reducing the first high-frequency power to be close to the value used in processing, increasing the second high-frequency power to be close to the value in processing, and then adjusting the first high-frequency power to obtain a plasma strength of a predetermined value is part of the method. The plasma processing step of causing the impedance matching circuit to perform a matching operation and simultaneously adjusting the first high-frequency power to obtain a plasma strength of a desired value in processing is also part of the method. Plasma discharge can be automatically, smoothly begun with high reproducibility, and stable plasma discharge can be maintained. Even in the case of disappearance of discharge, plasma discharge can be quickly restarted.

摘要翻译： 用于处理衬底的等离子体处理方法包括：放电开始步骤，通过阻抗匹配电路将第二高频电力提供到处理室，然后将大于处理中使用的功率的第一高频功率提供给处理室 以产生等离子体。 将第一高频功率降低到接近于处理中使用的值的调整步骤，将第二高频功率提高到接近处理值，然后调整第一高频功率以获得等离子体 预定值的强度是该方法的一部分。 等离子体处理步骤是使阻抗匹配电路执行匹配操作并且同时调节第一高频功率以获得处理中期望值的等离子体强度。 等离子体放电可以以高再现性自动平稳地开始，并且可以保持稳定的等离子体放电。 即使在放电消失的情况下，可以快速重新开始等离子体放电。

公开(公告)号：US06273955B1

公开(公告)日：2001-08-14

申请号：US08704138

申请日：1996-08-28

申请人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

发明人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.

摘要翻译： 一种用于通过连续工艺在基板上形成多个膜的成膜装置，包括通过连接彼此连通的多个真空室，至少具有可从真空室中分离的处理的真空室，用于实现预定处理 在基板上。