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33 条记录 (耗时 0.023 秒)

    Polishing pad composition and method of use
    1.
    发明授权
    Polishing pad composition and method of use 失效
    抛光垫组成及使用方法

    公开(公告)号：US06764574B1

    公开(公告)日：2004-07-20

    申请号：US09938150

    申请日：2001-08-22

    申请人： Yaw S. Obeng ,  Edward M. Yokley ,  Kathleen C. Richardson

    发明人： Yaw S. Obeng ,  Edward M. Yokley ,  Kathleen C. Richardson

    IPC分类号： H01L21302

    CPC分类号： B24B37/24 ,  B24D3/28 ,  B24D3/346

    摘要： The present invention is directed, in general, to packaged polishing pads for chemical mechanical polishing of semiconductor wafers and integrated circuits. More specifically, the invention is directed to a method of preparing and packing the pad and the packaging therefor. Prior to placing the pad on a platen and polishing with the pad, a polishing pad having an hygroscopic absorbency is soaked with an aqueous media for a time sufficient to equilibrate the pad. The pad maybe packaged by placement in a sealable moisture tight package after soaking or before soaking along with a sufficient quantity of aqueous media to allow the pad to equilibrate.

    摘要翻译： 本发明一般涉及用于半导体晶片和集成电路的化学机械抛光的封装抛光垫。 更具体地，本发明涉及一种制备和包装垫及其包装的方法。 在将垫放置在压板上并用垫抛光之前，将具有吸湿吸收性的抛光垫用水性介质浸泡足以平衡垫的时间。 在浸泡之后或在浸泡之前，通过放置在可密封的防潮包装中，垫可以包含足够量的水性介质以使垫平衡。

    Substrate polishing device and method
    4.
    发明授权
    Substrate polishing device and method 失效
    基材抛光装置及方法

    公开(公告)号：US06688956B1

    公开(公告)日：2004-02-10

    申请号：US09934780

    申请日：2001-08-22

    申请人： Edward M. Yokley ,  Yaw S. Obeng

    发明人： Edward M. Yokley ,  Yaw S. Obeng

    IPC分类号： B24D1100

    CPC分类号： B24B37/24 ,  B24D3/26 ,  B24D18/0063 ,  B29C44/56 ,  B29C59/14 ,  Y10T428/24967

    摘要： To address the deficiencies of the prior art, the present invention provides a polishing pad comprising a thermoplastic polymer and a method of manufacturing therefor. More specifically, the present invention polishing pad fabricated from an extruded amorphous thermoplastic and free of a gate vestige. The invention also provides a method of manufacturing a polishing pad that is free from a gate vestige pad from an extruded amorphous thermoplastic.

    摘要翻译： 为了解决现有技术的缺点，本发明提供一种包含热塑性聚合物的抛光垫及其制造方法。 更具体地说，本发明的抛光垫由挤出的非晶态热塑性塑料制成并且没有浇口痕迹。 本发明还提供了一种制造抛光垫的方法，所述抛光垫与挤出的非晶态热塑性材料不相隔离。

    Polishing pad and method for in situ delivery of chemical mechanical polishing slurry modifiers and applications thereof
    8.
    发明授权
    Polishing pad and method for in situ delivery of chemical mechanical polishing slurry modifiers and applications thereof 失效
    抛光垫和化学机械抛光浆料改性剂的原位输送方法及其应用

    公开(公告)号：US06575823B1

    公开(公告)日：2003-06-10

    申请号：US10077709

    申请日：2002-03-04

    申请人： Yaw S. Obeng ,  Edward M. Yokley

    发明人： Yaw S. Obeng ,  Edward M. Yokley

    IPC分类号： B24D328

    CPC分类号： B24B37/24 ,  B24D3/28 ,  B24D3/346

    摘要： The present invention is directed, in general, to polishing pads for chemical mechanical polishing of semiconductor wafers and integrated circuits. More specifically, the invention is directed to polishing pads containing a precursor slurry modifier. In the presence of a polishing slurry during chemical mechanical polishing, the precursor is released to the polishing slurry to form a slurry modifier thereby improving polishing.

    摘要翻译： 本发明一般涉及用于半导体晶片和集成电路的化学机械抛光的抛光垫。 更具体地，本发明涉及包含前体浆料改性剂的抛光垫。 在化学机械抛光期间在抛光浆料存在下，将前体释放到抛光浆料中以形成浆料改性剂，从而改善抛光。

    Method for reliably removing excess metal during metal silicide formation
    9.
    发明授权
    Method for reliably removing excess metal during metal silicide formation 有权
    在金属硅化物形成期间可靠地去除多余金属的方法

    公开(公告)号：US07700481B2

    公开(公告)日：2010-04-20

    申请号：US11767723

    申请日：2007-06-25

    申请人： Yaw S. Obeng ,  Murlidhar Bashyam ,  Srinivasa Raghavan

    发明人： Yaw S. Obeng ,  Murlidhar Bashyam ,  Srinivasa Raghavan

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  C23F1/28 ,  H01L21/02068 ,  H01L21/32134 ,  H01L21/6708

    摘要： A method for manufacturing a semiconductor device. The method comprises forming a metal layer on a silicon-containing layer located on a semiconductor substrate. The method also comprises reacting a portion of the metal layer with the silicon-containing layer to form a metal silicide layer. The method further comprises removing an unreacted portion of the metal layer on the metal silicide layer by a removal process. The removal process includes delivering a flow of an acidic solution to a surface of the unreacted portion of the metal layer, wherein the acidic solution delivered to the surface is substantially gas-free.

    摘要翻译： 一种半导体器件的制造方法。 该方法包括在位于半导体衬底上的含硅层上形成金属层。 该方法还包括使金属层的一部分与含硅层反应以形成金属硅化物层。 该方法还包括通过去除工艺去除金属硅化物层上的金属层的未反应部分。 去除方法包括将酸性溶液流传送到金属层的未反应部分的表面，其中输送到表面的酸性溶液基本上不含气体。

    Method of improving electromigration in semiconductor device manufacturing processes
    10.
    发明授权
    Method of improving electromigration in semiconductor device manufacturing processes 有权
    改善半导体器件制造工艺中电迁移的方法

    公开(公告)号：US06365503B1

    公开(公告)日：2002-04-02

    申请号：US09594189

    申请日：2000-06-14

    申请人： Jia Sheng Huang ,  Seung H. Kang ,  Anthony S. Oates ,  Yaw S. Obeng

    发明人： Jia Sheng Huang ,  Seung H. Kang ,  Anthony S. Oates ,  Yaw S. Obeng

    IPC分类号： H01L214763

    CPC分类号： H01L21/02071 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/76814 ,  H01L21/76838

    摘要： The present invention provides a method of forming an electromigration resisting layer in a semiconductor device. In an exemplary embodiment, the method comprises depositing a corrosion inhibitor comprising an organic ligand on a conductive layer of a semiconductor device wherein the conductive layer is susceptible to electromigration. The method further includes subjecting the corrosion inhibitor and the semiconductor device to a high temperature anneal to form an electromigration resisting layer on the conductive layer that reduces electromigration of the conductive layer.

    摘要翻译： 本发明提供一种在半导体器件中形成电迁移层的方法。 在一个示例性实施例中，该方法包括在半导体器件的导电层上沉积包含有机配体的腐蚀抑制剂，其中导电层易于电迁移。 该方法还包括使腐蚀抑制剂和半导体器件进行高温退火，以在导电层上形成减少导电层电迁移的电迁移层。