公开(公告)号：US20050102633A1

公开(公告)日：2005-05-12

申请号：US10703021

申请日：2003-11-06

申请人： Yen-Fu Chen ,  Raymond Wang

发明人： Yen-Fu Chen ,  Raymond Wang

IPC分类号： G06F3/033 ,  G06F3/048 ,  G06F3/00 ,  G06F17/21

CPC分类号： G06F3/04812

摘要： An apparatus and method for modifying and improving pointing device operation. The apparatus comprises a signal detector, a signal modifier, and a signal transmitter. The apparatus intercepts pointing device signals before application programs receive them. The signal detector continuously listens for signals generated by a pointing device, or a pointing device program. Responsive to the signal detector detecting a pointing device signal, the signal modifier determines what type of GUI element is located at the current pointer location. Based upon the identified GUI element, the signal modifier modifies the pointing device signal appropriately. The signal transmitter then relays the modified signal to any other programs that would have received the original signal if not for the action of the apparatus.

摘要翻译： 一种用于修改和改进指点设备操作的装置和方法。 该装置包括信号检测器，信号修正器和信号发射器。 在应用程序接收它们之前，设备拦截指向设备信号。 信号检测器连续监听由指示设备或定点设备程序产生的信号。 响应于信号检测器检测指示设备信号，信号修改器确定GUI元素在当前指针位置处的位置。 基于所识别的GUI元件，信号修改器适当地修改指示设备信号。 然后，信号发射机将修改的信号中继到任何其他将被接收到原始信号的程序，如果不是为了装置的动作。

公开(公告)号：US20090065795A1

公开(公告)日：2009-03-12

申请号：US12184179

申请日：2008-07-31

申请人： Philip Chan ,  Raymond Wang ,  Leo Lei

发明人： Philip Chan ,  Raymond Wang ,  Leo Lei

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： The present disclosure provides a transparent conductive film on P-type layer of GaN-based LED and a fabricating method thereof. The transparent conductive film is fabricated by Ni/ITO, Al/ITO or NiO/ITO. In one embodiment, the thickness of the Ni layer is 5 Å to 30 Å. The thickness of the Al layer is 5 Å to 30 Å. The thickness of the NiO layer is 5 Å to 40 Å. The thickness of the ITO layer is 1000 Å to 3000 Å. In one embodiment, the fabricating method comprises steps of evaporating one of Ni, Al and NiO layers on a P-type GaN layer, heat-treating a wafer on which the Ni or Al layer is evaporated, then evaporating an ITO layer on the surface of Ni, Al or NiO layer, and heat-treating the wafer on which Ni/ITO, Al/ITO or NiO/ITO layers are evaporated. The transparent conductive film can have high light transmittance within the range of visible light and low specific contact resistance.

摘要翻译： 本公开在GaN基LED的P型层上提供透明导电膜及其制造方法。 透明导电膜由Ni / ITO，Al / ITO或NiO / ITO制成。 在一个实施例中，Ni层的厚度为5埃至30埃。 Al层的厚度为5埃至30埃。 NiO层的厚度为5埃至40埃。 ITO层的厚度为1000埃至3000埃。 在一个实施例中，制造方法包括以下步骤：在P型GaN层上蒸发Ni，Al和NiO层之一，对其上蒸镀有Ni或Al层的晶片进行热处理，然后蒸发表面上的ITO层 的Ni，Al或NiO层，并且对Ni / ITO，Al / ITO或NiO / ITO层蒸发的晶片进行热处理。 透明导电膜可以在可见光范围内具有高透光率，并且具有低的比接触电阻。

公开(公告)号：USD579019S1

公开(公告)日：2008-10-21

申请号：US29304270

申请日：2008-02-27

申请人： Leo Lei ,  Raymond Wang

设计人： Leo Lei ,  Raymond Wang

公开(公告)号：US20160342374A1

公开(公告)日：2016-11-24

申请号：US14958450

申请日：2015-12-03

申请人： Raymond Wang ,  RayShine Photonics Corp.

发明人： Raymond Wang

IPC分类号： G06F3/14 ,  F21V8/00 ,  G02F1/1335 ,  G02F1/133

CPC分类号： G02F1/133555 ,  G02B6/0051 ,  G02B6/0053 ,  G02B6/0056 ,  G02B6/0063 ,  G02B6/0076 ,  G02F1/133615 ,  G02F2001/133342 ,  G06F3/1431 ,  G09G2300/023

摘要： A double-sided display module with two optically functional films includes a double-sided display panels, a lighting module, and a display controller. The double-sides display panel includes two oppositely disposed display panels, a light guide module, and two optically functional films. Each of the optically functional films includes a first transformation layer, a second transformation layer, a diffusion layer, a brightness enhancement layer, and a polarized layer, and each layer of the optically functional film is attached to each other by transfer-coating process. Therefore, the thickness of the optically functional film can be reduced, so that the cost of manufacturing the double-sided display module with the optically functional films is saved and the volume of the double-sided display module is reduced as well without reducing brightness.

摘要翻译： 具有两个光学功能膜的双面显示模块包括双面显示面板，照明模块和显示控制器。 双面显示面板包括两个相对布置的显示面板，导光模块和两个光学功能薄膜。 每个光学功能膜包括第一转变层，第二转变层，扩散层，亮度增强层和偏振层，并且通过转移涂覆工艺将每层光学功能膜彼此附接。 因此，可以降低光学功能膜的厚度，从而节省了制造具有光学功能膜的双面显示模块的成本，并且双面显示模块的体积也降低而不降低亮度。

公开(公告)号：US09411168B2

公开(公告)日：2016-08-09

申请号：US14606868

申请日：2015-01-27

申请人： Raymond Wang ,  RayShine Photonics Corp.

发明人： Raymond Wang

IPC分类号： G02B27/28 ,  G02B1/14 ,  G02B5/30

CPC分类号： G02B27/288 ,  G02B1/14 ,  G02B5/3016 ,  G02B5/3041 ,  G02B5/3083 ,  G02B27/286

摘要： An optical module includes a protection layer, an optically functional film, and an optical device. The optically functional film can make an external light transmit through it but cannot allow a reflection of the external light reflected by the optical device transmit through it, and the optically functional film can filter a blue ray of the external light.

摘要翻译： 光学模块包括保护层，光学功能膜和光学装置。 光学功能膜可以使外部光透过它，但不能允许由光学器件反射的外部光的反射透射通过它，并且光学功能膜可以过滤外部光的蓝色光。

公开(公告)号：US20050010594A1

公开(公告)日：2005-01-13

申请号：US10617529

申请日：2003-07-10

申请人： 3Yen-Fu Chen ,  Raymond Wang

发明人： 3Yen-Fu Chen ,  Raymond Wang

IPC分类号： G06F15/00 ,  G06F9/44 ,  G06F7/00

CPC分类号： G06F3/0482

摘要： An Operation Modification Program is disclosed that alters the functions performed with a user input device in conjunction with a Drop Down Menu Program. The Drop Down Menu Program provides for the elimination of some manual steps required by a user when employing a user input device for operations involving activation, selection, sorting and scrolling. The Operation Modification Program provides for modification of pointer device functions to eliminate additional manual steps that would be required by a user with the Drop Down Menu Program. The user may configure the modifications or the user may operate using default settings. Five modifications are provided: pointer-over, pointer-over-with-highlighting, pointer-over-with-clicking, pointer-over-with highlighting-and-clicking, and pointer-movement. The five modifications provide for auto-detection, auto-determination, and auto-execution thereby eliminating one or more manual movements by a user. Each of the five modifications can be applied in the areas of activation, selection, scrolling and sorting.

摘要翻译： 公开了一种操作修改程序，其改变与用户输入设备一起执行的功能与下拉菜单程序。 下拉菜单程序提供消除用户在使用用户输入设备进行涉及激活，选择，排序和滚动的操作时所需的一些手动步骤。 操作修改程序提供指针设备功能的修改，以消除用户使用“下拉菜单”程序所需的其他手动步骤。 用户可以配置修改，或者用户可以使用默认设置进行操作。 提供了五个修改：指针，指针突出显示，指针点击，指针突出显示和指针移动。 这五个修改提供了自动检测，自动确定和自动执行，从而消除了用户的一个或多个手动移动。 五个修改中的每一个可以应用于激活，选择，滚动和排序的领域。

公开(公告)号：US20160376684A1

公开(公告)日：2016-12-29

申请号：US14757478

申请日：2015-12-23

申请人： Raymond Wang ,  RAYSHINE PHOTONICS CORP.

发明人： Raymond Wang ,  Chin C. Lee

IPC分类号： C22C5/06 ,  C22C1/04 ,  B22F9/04 ,  C22C1/02 ,  C22F1/14

CPC分类号： C22C5/06 ,  B22F1/0003 ,  C22C1/02 ,  C22C1/0466 ,  C22F1/14

摘要： The present invention provides a silver alloy material and a method for manufacturing the silver alloy material, the silver alloy material comprising essentially by weight of about 65% to 95% Ag, about 5% to 35% In. The silver alloy material has a solid-liquid coexistence zone. The steps for manufacturing the silver alloy material include mixing, heating in vacuum status, cooling and annealing. The characters of the silver alloy are low yield tensile strength (58 Mpa), high ultimate tensile strength (300 MPa) and high elongation (60%) and anti-tarnishing property. The silver alloy material could be used for optics reflector mirror, silver ornament, brazing materials and very fine silver alloy wire for semiconductor bounding application.

摘要翻译： 本发明提供一种银合金材料和一种制造银合金材料的方法，该银合金材料基本上包含约65％至95％的Ag，约5％至35％的In。 银合金材料具有固液共存区域。 制造银合金材料的步骤包括在真空状态下的混合，加热，冷却和退火。 银合金的特征是低屈服拉伸强度（58Mpa），高极限拉伸强度（300MPa）和高伸长率（60％）和抗玷污性能。 银合金材料可用于光学反射镜，银饰，钎焊材料和用于半导体界限应用的非常细的银合金线。

公开(公告)号：US20090057706A1

公开(公告)日：2009-03-05

申请号：US12184172

申请日：2008-07-31

申请人： Philip Chan ,  Raymond Wang ,  Leo Lei

发明人： Philip Chan ,  Raymond Wang ,  Leo Lei

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： The present disclosure relates to set of a ohmic contact electrodes on both P-type and N-type layers of a GaN-based light emitting diode (LED) and a fabricating method thereof. The materials of ohmic contact electrodes on both P-type and N-type layers of a GaN-based LED are a metal combination of Cr/Pd/Au. In one embodiment, the fabricating method comprises etching out an N-type GaN layer on an epitaxial structure on a sapphire substrate, and evaporating a P-type transparent electrode layer on the P-type GaN layer, then positioning patterns of the ohmic contact electrodes on both P-type and N-type layers, and then evaporating a metal combination of a Cr layer 50 Å to 500 Å thick, a Pd layer 300 Å to 1000 Å thick and an Au layer 3000 Å to 20000 Å thick in turn on the P-type transparent electrode layer and N-type GaN layer respectively, and then annealing electrodes of the chip, on which the Cr, Pd and Au layers are evaporated in nitrogen atmosphere for 5 minutes to 20 minutes at a temperature from 200 degrees to 450 degrees. Excellent ohmic contact characteristics and better thermal stability are obtained as well as higher oxidation resistance, thus improving the reliability of diode.

摘要翻译： 本公开涉及GaN基发光二极管（LED）的P型和N型层上的欧姆接触电极的集合及其制造方法。 GaN基LED的P型和N型层上的欧姆接触电极的材料是Cr / Pd / Au的金属组合。 在一个实施例中，制造方法包括在蓝宝石衬底上蚀刻外延结构上的N型GaN层，并蒸发P型GaN层上的P型透明电极层，然后定位欧姆接触电极的图案 在P型和N型层上，然后将Cr层厚至500埃的金属组合，厚度为300埃至1000埃的Au层和3000埃至20000埃的Au层蒸发 分别为P型透明电极层和N型GaN层，然后将Cr，Pd和Au层的退火电极在氮气气氛中在200℃至200℃的温度下蒸发5分钟至20分钟 450度。 获得了优异的欧姆接触特性和更好的热稳定性以及更高的抗氧化性，从而提高了二极管的可靠性。

公开(公告)号：USD578536S1

公开(公告)日：2008-10-14

申请号：US29304268

申请日：2008-02-27

申请人： Leo Lei ,  Raymond Wang

设计人： Leo Lei ,  Raymond Wang

公开(公告)号：US06852637B2

公开(公告)日：2005-02-08

申请号：US10053160

申请日：2002-01-15

申请人： Tsai-Yu Huang ,  Raymond Wang ,  Sheng-chuan Su

发明人： Tsai-Yu Huang ,  Raymond Wang ,  Sheng-chuan Su

IPC分类号： H01L21/033 ,  H01L21/311 ,  H01L21/302

CPC分类号： H01L21/0335 ,  H01L21/31144

摘要： A method of etching a mask layer as a protecting layer for metal contact windows uses a victim layer with slopes to avoid undercutting. First, a mask layer is formed on a semiconductor substrate. Next, a photoresist with patterns is formed on the surface of the mask layer. Next, a victim layer is formed on the surface of the photoresist according to the photoresist topography, such that a plurality of slopes is formed on the sidewalls of the photoresist. The photoresist and the victim layer with slopes are used as the etching mask to etch the mask layer to form patterns.

摘要翻译： 蚀刻掩模层作为金属接触窗口的保护层的方法使用具有斜面的受害层以避免底切。 首先，在半导体基板上形成掩模层。 接下来，在掩模层的表面上形成具有图案的光致抗蚀剂。 接下来，根据光致抗蚀剂形貌，在光致抗蚀剂的表面上形成受害层，使得在光致抗蚀剂的侧壁上形成多个斜面。 使用具有斜面的光致抗蚀剂和受害层作为蚀刻掩模来蚀刻掩模层以形成图案。