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    COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS
    3.
    发明申请
    COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE MATERIALS 有权
    用于形成相变材料的复合靶材溅射

    公开(公告)号：US20120193595A1

    公开(公告)日：2012-08-02

    申请号：US13076169

    申请日：2011-03-30

    申请人： Huai-Yu Cheng ,  Chieh-Fang Chen ,  Hsiang-Lan Lung ,  Yen-Hao Shih ,  Simone Raoux ,  Matthew J. Breitwisch

    发明人： Huai-Yu Cheng ,  Chieh-Fang Chen ,  Hsiang-Lan Lung ,  Yen-Hao Shih ,  Simone Raoux ,  Matthew J. Breitwisch

    IPC分类号： H01L45/00 ,  C23C14/14 ,  C23C14/34

    CPC分类号： H01L47/00 ,  C23C14/06 ,  C23C14/0623 ,  C23C14/3414 ,  H01L21/06 ,  H01L27/24 ,  H01L45/144 ,  H01L45/1625

    摘要： A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.

    摘要翻译： 使用包括硅或其它半导体的复合溅射靶和相变材料形成具有硅或另一半导体或硅基或其它基于半导体的添加剂的相变材料层。 硅或其他半导体的浓度比正在形成的层中规定浓度的硅或其它半导体的浓度高五倍以上。 对于GST型相变材料中的硅基添加剂，溅射靶可以包含超过40at％的硅。 可以在沉积期间使用复合溅射靶在溅射室中形成具有诸如氧或氮的反应气体流的硅基或其它基于半导体的添加剂。

    Composite target sputtering for forming doped phase change materials
    4.
    发明授权
    Composite target sputtering for forming doped phase change materials 有权
    用于形成掺杂相变材料的复合靶溅射

    公开(公告)号：US08426242B2

    公开(公告)日：2013-04-23

    申请号：US13076169

    申请日：2011-03-30

    申请人： Huai-Yu Cheng ,  Chieh-Fang Chen ,  Hsiang-Lan Lung ,  Yen-Hao Shih ,  Simone Raoux ,  Matthew J. Breitwisch

    发明人： Huai-Yu Cheng ,  Chieh-Fang Chen ,  Hsiang-Lan Lung ,  Yen-Hao Shih ,  Simone Raoux ,  Matthew J. Breitwisch

    IPC分类号： H01L21/06

    CPC分类号： H01L47/00 ,  C23C14/06 ,  C23C14/0623 ,  C23C14/3414 ,  H01L21/06 ,  H01L27/24 ,  H01L45/144 ,  H01L45/1625

    摘要： A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.

    摘要翻译： 使用包括硅或其它半导体的复合溅射靶和相变材料形成具有硅或另一半导体或硅基或其它基于半导体的添加剂的相变材料层。 硅或其他半导体的浓度比正在形成的层中规定浓度的硅或其它半导体的浓度高五倍以上。 对于GST型相变材料中的硅基添加剂，溅射靶可以包含超过40at％的硅。 可以在沉积期间使用复合溅射靶在溅射室中形成具有诸如氧或氮的反应气体流的硅基或其它基于半导体的添加剂。

    Phase change memory random access device using single-element phase change material
    6.
    发明授权
    Phase change memory random access device using single-element phase change material 失效
    相变存储器随机存取装置采用单元相变材料

    公开(公告)号：US08378328B2

    公开(公告)日：2013-02-19

    申请号：US12036215

    申请日：2008-02-22

    申请人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Yi-Chou Chen ,  Chung H. Lam ,  Simone Raoux

    发明人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Yi-Chou Chen ,  Chung H. Lam ,  Simone Raoux

    IPC分类号： H01L29/02 ,  H01L47/00

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/14

    摘要： A phase change memory cell with a single element phase change thin film layer; and a first electrode and a second electrode coupled to the single element phase change thin film layer. A current flows from the first electrode to the single element phase change thin film layer, and through to the second electrode. The single element phase change thin film layer includes a single element phase change material. The single element phase change thin film layer can be less than 5 nanometers thick. The temperature of crystallization of the single element phase change material can be controlled by its thickness. In one embodiment, the single element phase change thin film layer is configured to be amorphous at room temperature (25 degrees Celsius). In one embodiment, the single element phase change thin film layer is comprised of Antimony (Sb).

    摘要翻译： 具有单个元件相变薄膜层的相变存储单元; 以及耦合到单个元件相变薄膜层的第一电极和第二电极。 A电流从第一电极流向单一元件相变薄膜层，并通过第二电极。 单元相变薄膜层包括单一元素相变材料。 单相相变薄膜层可以小于5纳米厚。 单元相变材料的结晶温度可以通过其厚度来控制。 在一个实施例中，单个元件相变薄膜层被配置为在室温（25摄氏度）下是无定形的。 在一个实施例中，单元相变薄膜层由锑（Sb）组成。

    PHASE CHANGE MEMORY RANDOM ACCESS DEVICE USING SINGLE-ELEMENT PHASE CHANGE MATERIAL
    7.
    发明申请
    PHASE CHANGE MEMORY RANDOM ACCESS DEVICE USING SINGLE-ELEMENT PHASE CHANGE MATERIAL 失效
    使用单元相变材料的相变存储随机存取设备

    公开(公告)号：US20090212274A1

    公开(公告)日：2009-08-27

    申请号：US12036215

    申请日：2008-02-22

    申请人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Yi-Chou Chen ,  Chung H. Lam ,  Simone Raoux

    发明人： Matthew J. Breitwisch ,  Chieh-Fang Chen ,  Yi-Chou Chen ,  Chung H. Lam ,  Simone Raoux

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/1226 ,  H01L45/14

    摘要： A phase change memory cell with a single element phase change thin film layer; and a first electrode and a second electrode coupled to the single element phase change thin film layer. A current flows from the first electrode to the single element phase change thin film layer, and through to the second electrode. The single element phase change thin film layer includes a single element phase change material. The single element phase change thin film layer can be less than 5 nanometers thick. The temperature of crystallization of the single element phase change material can be controlled by its thickness. In one embodiment, the single element phase change thin film layer is configured to be amorphous at room temperature (25 degrees Celsius). In one embodiment, the single element phase change thin film layer is comprised of Antimony (Sb).

    摘要翻译： 具有单个元件相变薄膜层的相变存储单元; 以及耦合到单个元件相变薄膜层的第一电极和第二电极。 A电流从第一电极流向单一元件相变薄膜层，并通过第二电极。 单元相变薄膜层包括单一元素相变材料。 单相相变薄膜层可以小于5纳米厚。 单元相变材料的结晶温度可以通过其厚度来控制。 在一个实施例中，单个元件相变薄膜层被配置为在室温（25摄氏度）下是无定形的。 在一个实施例中，单元相变薄膜层由锑（Sb）组成。

    Current constricting phase change memory element structure
    8.
    发明授权
    Current constricting phase change memory element structure 有权
    电流限制相变存储元件结构

    公开(公告)号：US07932507B2

    公开(公告)日：2011-04-26

    申请号：US12727672

    申请日：2010-03-19

    申请人： Chieh-Fang Chen ,  Shih Hung Chen ,  Yi-Chou Chen ,  Thomas Happ ,  Chia Hua Ho ,  Ming-Hsiang Hsueh ,  Chung Hon Lam ,  Hsiang-Lan Lung ,  Jan Boris Philipp ,  Simone Raoux

    发明人： Chieh-Fang Chen ,  Shih Hung Chen ,  Yi-Chou Chen ,  Thomas Happ ,  Chia Hua Ho ,  Ming-Hsiang Hsueh ,  Chung Hon Lam ,  Hsiang-Lan Lung ,  Jan Boris Philipp ,  Simone Raoux

    IPC分类号： H01L29/02

    CPC分类号： B82Y10/00 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16

    摘要： A layer of nanoparticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer.

    摘要翻译： 使用具有大约10nm的尺寸的纳米颗粒层形成电流收缩层或作为用于从下面的绝​​缘体层形成电流收缩层的硬掩模。 纳米颗粒优选在下面的表面上自对准和/或自平坦化。 电流收缩层可以形成在底部导电板内，在相变材料层内，在顶部导电板内，或在锥形衬垫之间的锥形衬里之间，锥形通孔侧壁和通孔插塞包含相变材料或顶部导电 材料。 电流收缩层周围的局部结构的电流密度高于周围区域，从而允许局部温度比周围材料高。 由于电流收缩层，减少编程相变存储器件所需的总电流以及编程晶体管的尺寸。